Intrinsic magnetic properties of In2O3 and transition metal-doped-In2O3

This paper reports on the influence of the sintering temperature and atmosphere and transition-metal doping on the magnetic properties of nanocrystalline and bulk In₂O₃. Undoped nanocrystalline In₂O₃ is diamagnetic whatever the sintering temperature and atmosphere. All single-phase transition-metal-doped In₂O₃ samples are paramagnetic, with a paramagnetic effective moment originating from weakly interacting transition metal ions. No trace of ferromagnetism has been detected even with samples sintered under argon, except extrinsic ferromagnetism for samples with magnetic dopant concentrations exceeding the solubility limit.     

Characterization of interface between CuInSe2 and In2O3

CuInSe₂/In₂O₃ structures were formed by depositing CuInSe₂ films by stepwise flash evaporation onto In₂O₃ films, which were grown by DC reactive sputtering of In target in presence of (Ar+O₂) gas mixture. Phase purity of the CuInSe₂ and In₂O₃ films was confirmed by Transmission Electron Microscopy (TEM) studies. X-ray diffraction (XRD) results on CuInSe₂/In₂O₃/glass structures showed sharp peaks corresponding to (112) plane of CuInSe₂ and (222) plane of In₂O_3. Rutherford Backscattering Spectrometry (RBS) investigations were carried out on CuInSe₂/In₂O₃/Si structures in order to characterize the interface between In₂O₃ and CuInSe₂. The results show that the CuInSe₂ films were near stoichoimetric and In₂O₃ films had oxygen deficient composition. CuInSe₂/In₂O₃ interface was found to include a ∼20 nm thick region consisting of copper, indium and oxygen. Also, the In₂O₃/Si interface showed the formation of ∼20 nm thick region consisting of silicon, indium and oxygen. The results are explained on the basis of diffusion/reaction taking place at the respective interfaces.     

In2O3纳米微粒非线性光学特性

用Z扫描技术研究了In₂O₃纳米微粒有机溶胶和水溶胶的三阶非线性光学特性,发现表面修饰能明显提高In₂O₃纳米微粒的非线性响应.讨论了表面偶极效应对In₂O₃纳米微粒非线性的影响. 关键词：     

The influence of interfacial barrier engineering on the resistance switching of In2O3：SnO2/TiO2/In2O3：SnO2 device

The I-V characteristics of In2O3：SnO2/TiO2/In2O3：SnO2 junctions with different interracial barriers are inves- tigated by comparing experiments. A two-step resistance switching process is found for samples with two interfacial barriers produced by specific thermal treatment on the interfaces. The nonsynchronous occurrence of conducting filament formation through the oxide bulk and the reduction in the interracial barrier due to the migration of oxygen vacancies under the electric field is supposed to explain the two-step resistive switching process. The unique switching properties of the device, based on interracial barrier engineering, could be exploited for novel applications in nonvolatile memory devices.     

Fabrication and photoluminescence characteristics of In2O3 nanohillocks

Uniformly distributed polycrystalline indium nanohillocks are synthesized on silicon substrates with Au catalyst by using the radio frequency magnetic sputtering technique. The results show that the Au catalyst plays a key role in the formation of indium nanohillocks. After thermally oxidizing the indium nanohillocks at 500 ℃ in air for 5 h, the indium nanohillocks totally transform into In₂O₃ nanohillocks. The energy-dispersive X-ray spectroscopy result indicates that many oxygen vacancies and oxygen-indium vacancy pairs exist in the In₂O₃ nanohillocks. Photoluminescence spectra under an Ne laser excitation at 280 nm show broad emissions at 420 nm and 470 nm with a shoulder at 450 nm related to oxygen vacancies and oxygen-indium vacancies at room temperature.     

取向和非取向In2O3纳米线的场发射研究

用自制的设备制备了取向和无取向氧化铟纳米线，并研究了In₂O₃纳米线的场发射性质，发现取向纳米线比非取向纳米线有着更好的场发射特性.取向纳米线的开启和阈值场强明显低于非取向纳米线，这可能是由于取向纳米线之间的场屏蔽效应较弱以及取向纳米线有较多的顶部发射端的缘故. 关键词： 场发射 纳米线 取向 非取向     

Tb3+-activated In2Si2O7 phosphor

Indium silicate activated by terbium was found to be an efficient phosphor with CR excitation, the luminosity of which was comparable to the most luminous of other terbium-activated silicates. For the preparation of this phosphor, alkaline earth metal flourides proved to act as a good mineralizer. The best result was obtained when a mixture of 1 mol In₂O₃, 2.2 mol SiO₂, 0.015 mol Tb₄O₇ and 0.05 mol BaF₂ was fired at 1 400°C in air for 4 h. Other rare earth luminescent centers such as Ce, Pr, Eu, Dy, Er and Tm were examined but none showed noticeable emission. Some UV excitation properties are also described.     

In2O3/CuO纳米异质结的制备和光催化性质研究

通过溶胶-凝胶结合静电纺丝过程制备了In₂O₃/CuO纳米异质结。XRD和Raman光谱的研究表明,随着前驱物中Cu/In比例的增加,CuO相的含量逐渐增加。吸收光谱研究表明,随着CuO含量的增加,复合纳米结构的可见光吸收明显增强。光催化实验研究结果表明,In₂O₃/CuO纳米异质结具有比单一相的In₂O₃和CuO更强的光催化性能,其主要来源于异质结所导致的增强的光生电子和空穴的分离效率。     

Co-doped In2O3 thin films: Room temperature ferromagnets

Laser-ablated Co-doped In₂O₃ thin films were fabricated under various growth conditions on R-cut Al₂O₃ and MgO substrates. All Co:In₂O₃ films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ_B/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In₂O₃ thin films has confirmed that doping few percent of magnetic elements such as Co into In₂O₃ could result in a promising magnetic material.     

悬空氧化铟纳米线晶体管制备与光电性能表征

一维(1D)半导体纳米线在纳米电子学和纳米光子学中表现出色.然而,纳米线晶体管的电特性对纳米线与衬底之间的相互作用非常敏感,而优化器件结构可以改善纳米线晶体管的电学和光电检测性能.本文报道了通过一步式光刻.     

Infrared Faraday rotation on thin film In2O3+SnO2 semiconductors

Two sets of thin film sputtered In₂O₃+SnO₂ samples, one prepared in argon atmosphere with oxigen, and the other without, at various temperatures between 100°C and 250°C, have been studied by measuring their Farday rotation from optical to infrared frequencies, as well as their optical transmission spectra. The effect of the different treatments on the carrier densities and mobilities, show values that grow with deposition temperature. This can be attributed to an increase in the number of oxygen vacancies. On the other hand, the presence of O₂ in the atmosphere during deposition, leads to smaller values at the same temperatures, compared to those obtained in samples prepared in atmosphere without oxygen, seemingly as a result of the filling of the vacancies.     

Response improvement for In2O3-TiO2 thick film gas sensors

In₂O₃ is introduced into TiO₂ by sol-gel method to improve the response/recovery rate and expand the operating temperature, when the In₂O₃-TiO₂ mixed system is exposed to H₂/O₂. The sensor is fabricated by thick film technology. Influence of In₂O₃ on the film phase composition, microstructure and sensing characteristics is discussed. Dynamic response properties show that the operating temperature of the mixed system is at 500-800 °C, which is about 600-800 °C for pure TiO₂. Response time of the sensor is about 200-260 ms (millisecond) while recovery time is in a narrow range of 60-280 ms at 600-800 °C. The promoting mechanism is suggested to arise from the introduction of In₂O₃ and grain size effect of the sensing film. Then In₂O₃-TiO₂ thick films are surface-modified by Pt using chloroplatinic acid. The promoting effect of Pt dispersed on the mixed system is also investigated.     

Synthesis and characterization of room-temperature ferromagnetism in Fe- and Ni-co-doped In2O3

Observation of room-temperature ferromagnetism in Fe- and Ni-co-doped In₂O₃ samples (In_0.9Fe_0.1−xNi_x)₂O₃ (0?x?0.1) prepared by citric acid sol-gel auto-igniting method is reported. All of the samples with intermediate x values are ferromagnetic at room-temperature. The highest saturation magnetization (0.453 μ_B/Fe+Ni ions) moment is reached in the sample with x=0.04. The highest solubility of Fe and Ni ions in the In₂O₃ lattice is around 10 and 4 at%, respectively. The 10 at% Fe-doped sample is found to be weakly ferromagnetic, while the 10 at% Ni-doped sample is paramagnetic. Extensive structure including Extended X-ray absorption fine structure (EXAFS), magnetic and magneto-transport including Hall effects studies on the samples indicate the observed ferromagnetism is intrinsic rather than from the secondary impurity phases.     

SnO2 / In2O3 one-dimensional nano-core-shell structures: Synthesis, characterization and photoluminescence properties

SnO₂/In₂O₃ one-dimensional nano-core-shell structures have been synthesized at 1350 ^°C by thermal evaporation of the mixture of metal Sn, Fe(NO₃)₃ powders and In particles. The as-synthesized products have been characterized by energy-dispersive X-ray spectroscopy, selected-area electron diffraction and high-resolution transmission electron microscopy. Microstructure characterization indicates the orientation relationship between core and shell is , . The formation mechanism of this nano-core-shell structure can be attributed to the cover of In₂O₃ on the surface of SnO₂ nanochains. The photoluminescence properties of the nano-core-shell structures have been measured. The PL spectrum shows some difference with the result from pure SnO₂ and In₂O₃ nanostructure that be deemed to relate to interface defects in SnO₂/In₂O₃ nano-core-shell structure.     

Electrical conduction in Fe2O3 and Cr2O3

The influence of some impurities on the conduction properties of Cr₂O₃ and Fe₂O₃ are examined and contrasted. A mechanism is proposed to account for the effect of Ti in Cr₂O₃.     

Yb-In_2O_3纳米管的制备及其对甲醛的优异气敏性能

采用单管静电纺丝的方法成功制备了纯的与Yb掺杂的In_2O_3纳米管(Yb-In_2O_3).利用扫描电子显微镜和X射线衍射对样品的结构和形貌进行了表征,制作了基于纯In_2O_3和Yb-In_2O_3纳米管的气敏元件.研究表明,Yb-In_2O_3纳米管气敏元件在230℃下对100 ppm甲醛的灵敏度为69.8,是纯In_2O_3纳米管气敏元件对同浓度甲醛灵敏度(18.4)的3.8倍,其对100 ppm甲醛的响应恢复时间分别为4 s和84 s.并且,基于Yb-In_2O_3纳米管的气敏元件对100 ppb甲醛的灵敏度达到2.5.此外,该气敏元件还具有出色的选择性及稳定性,具备良好的实际应用前景.     

Control synthesis of octahedral In2O3 crystals,belts, and nanowires

Octahedral In₂O₃ crystals were synthesized by evaporation of a mixture of In₂O₃ and graphite in a horizontal double-tube system. By adjusting the experimental conditions, In₂O₃ nanowires and nanobelts were also obtained. The microstructures of the resultant In₂O₃ materials were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected-area electron diffraction (SAED), X-ray diffraction. In addition, the growth mechanism of the octahedral In₂O₃ crystals was discussed in detail.     

Effect of rare earth (Pr2O3, Nd2O3, Sm2O3, Eu2O3, Gd2O3 and Er2O3 ) on the acoustic properties of glass belonging to bismuth-borate system

Bismuth-borate glasses doped with some rare earth ions were studied with respect to the density, molar volume and the elastic moduli, Poisson’s ratio, Debye temperature, microhardness, softening temperature, acoustic impedance, diffusion constant and latent heat of melting. Ultrasonic velocities were measured by the pulse echo overlap technique at a frequency of 10 MHz and at room temperature. From these velocities and density values, various elastic moduli were calculated. The correlation of elastic stiffness, the cross link density, and the fractal bond connectivity of these glasses are discussed. The derived experimental values of shear modulus, bulk modulus, Young’s modulus, and Poisson’s ratio for our glasses are compared with the theoretically calculated values in terms of the bond compression model and Makishima-Mackenize theory.     

Synthesis and performance of core-shell structured ZnO/In2O3 composites in situ growth

Core-shell structured ZnO/In₂O₃ composites were successfully synthesized via situ growth method. Phase structure, morphology, microstructure and property of the products were investigated by X-ray diffraction (XRD), TG-DTA, field emission scanning electron microscopy (FESEM), energy-dispersive spectrometry (EDS), transmission electron microscope (TEM) and photoluminescence (PL). Results show that the core-shell structures consist of spindle-like ZnO with about 800 nm in length and 200 nm in diameter, and In₂O₃ particles with a diameter of 50 nm coated on the surface of ZnO uniformly. HMTA plays an important role in the formation of core-shell structures and the addition of In₂O₃ has a great effect on PL spectrum. Possible mechanism for the formation of core-shell structures is also proposed in this paper.