Electrons and holes in HgTe and Hg0.82Cd0.18Te with controlled deviations from stoichiometry

The deviations from the stoichiometric composition of HgTe and Hg_0.82Cd_0.18Te crystals have been controlled by heat treatment under Hg vapor pressure. The magnetic field dependence of the Hall coefficient always shows the presence of two different sets of electrons and one set of holes. A low mobility electron is shown to belong to the conduction band. Vapor pressure dependence of hole concentration in HgTe shows that the concentration of nonstoichiometric defects decreases with increasing Hg vapor pressure, but the hole concentration is always higher than the electron concentration. In the case of Hg_0.82Cd_0.18Te, the electron concentration exceeds the hole concentration at high Hg vapor pressures. The dependence of the conduction band electron mobility in HgTe upon carrier density shows that the scattering by holes and impurities is predominant. In Hg_0.82Cd_0.18Te, however, optical phonon scattering is dominant when the deviation from stoichiometry is small and the effect of residual impurities can be neglected, and scattering by holes is dominant when the hole concentration is over $\text{10}{}^{17}\text{cm}{}^3$.     

Electrical properties of narrow gap semiconductor PtSb2

Results of measurements of conductivity, Hall and Seebeck coefficients of tellurium doped n-type crystals of platinum antimonide are presented. The Hall coefficient and the Seebeck coefficient undergo sign inversion twice, below and above room temperature. The detailed analysis of the experimental results revealed that below 200 K PtSb₂ can be described by a simple conduction and valence band model. The energy gap E_g = (110?0.15 × T) (meV), the electron conductivity mass m_n^c/m₀ = 0.35, acoustic phonon limited electron mobility 〈μ_a〉_n = 3 × 10⁶ T^{?$\text{3}\text{2}$} ($\text{cm}{}^2\text{V · s}$) and mobility ratio 〈μ_a〉_n/〈μ_a〉_p = 0.4 are determined. However, at higher temperatures a more complicated valence band model is needed to account for the experimental results. The arguments for the existence of subsidiary valleys in the valence band are presented.     

Alpha-particle scattering from 9Be

The elastic and inelastic scatterings of 35.5 MeV ⁴He ions from ⁹Be are analyzed in the strong coupling limit by the coupled channel method. A good account of the ground-state ($\text{K =}\text{3}\text{2}{}^{\mathrm{?}}$) band is obtained, in agreement with the electromagnetic properties of this band. Data for three states of the $\text{K =}\text{1}\text{2}{}^{\mathrm{+}}$ band are analyzed, yielding much larger isoscalar dipole scattering amplitudes for the $\text{3}\text{2}{}^{\mathrm{+}}$ state than are obtained by electron scattering for electric dipole transitions.     

The examination of the Faraday effect and location of the Cr level in Cr doped PbTe

Faraday effect, absorption coefficient and Hall effect have been examined in Cr doped PbTe single crystals. The effective masses of carriers m_F and then values of effective masses at the bottom of conductivity band m_F(0) have been calculated. It is shown that m_F in Cr doped PbTe is comparable with m_F in n-type PbTe not doped with chromium, with the same free carrier concentration, and the relative temperature variation of m_F(0) corresponds to relative variation of Eg. In the absorption spectrum the additional absorption maximum is found at the energy 0.11–0.14 eV. The long-wave side of the peak is shifted towards longer waves as the temperature is increased. Calculation shows that chromium level is located in the conduction band at ΔE = 0.11 eV in the limit T → 0, and is shifted down towards the bottom of the conduction band with a constant rate of $\text{0.8 × 10}{}^{\mathrm{?4}}\text{eV}\text{K}$ within the temperature range of 4.4–300 K and $\text{3.3 × 10}{}^{\mathrm{?4}}\text{eV}\text{K}$ within the temperature range 300–800 K.     

Effects of annealing on the electrical properties of HgTe crystals

The carrier mobility of HgTe crystals at 15°C increased to as much as $\text{33,000}\text{cm}{}^2\text{V sec}$, and the transverse magnetoresistance decreased, when the crystals were annealed long enough in mercury vapor. The results are compared with our calculations of the galvanomagnetic effects for mixed scattering by phonons and charged centers, which was made for a parabolic band. It is concluded that the density of charged centers decreases with annealing, and that acoustic phonons may be the dominant scattering sources near room temperature.     

Hole mobility in p-type HgTe

Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected and analysed. In the analysis three ranges of acceptor concentration have been distinguished: a low concentration range up to about 5 × 10¹⁵ cm^?3 (pure samples), a high concentration range from 10¹⁶ to 10¹⁸ cm^?3 (p-like samples), and an extremely high concentration range above 10¹⁸ cm^?3 (p-type samples). In pure HgTe samples the holes are in the valence band, in p-like samples the “holes” are in the impurity band, and in p-type HgTe samples the holes are in a strong mixing impurity-valence band. The mobility of holes in the valence band is of the order of $\text{10}{}^5\text{cm}{}^2\text{Vs}$. The mobility of “holes” in the impurity band decreases with increasing impurity concentration from about $\text{5 × 10}{}^3\text{cm}{}^2\text{Vs}$ to $\text{125}\text{cm}{}^2\text{Vs}$. The mobility of holes in p-type HgTe samples is independent of the acceptor concentration and is equal to $\text{125}\text{cm}{}^2\text{Vs}$.     

Electron transport properties of amorphous Mg80.4Cu19.6 alloy

The Hall coefficient, thermoelectric power and electrical resistivity of the liquid quenched amorphous Mg_80.4Cu_19.6 alloy have been measured over a wide temperature range below room temperature. The 2k_F value deduced from the observed Hall coefficient agrees well with the free electron value. The thermoelectric power is positive and increases linearly with increasing temperature above approximately 180 K. The downward deviation is evident in the lower temperature range. This behaviour is in sharp contrast with the negative thermoelectric power observed in the amorphous Mg-Zn alloy. Nevertheless, the overall temperature variation of the electrical resistivity resembles the previously reported data of the amorphous Mg_72.5Zn_27.5 alloy in various aspects; (1) the room temperature resistivity value, (2) the negative TCR and its magnitude, (3) the appearance of a broad maximum at about 50 K and a minimum at about 10 K and (4) T²-dependence in the range of 10～30 K and $\text{-(T-T}{}_{\max }\text{)}{}^{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$-dependence in the range of 50～220 K. The results are discussed in connection with $\text{2k}{}_{\mathrm{F}}\text{K}{}_{\mathrm{P}}$ criterion and Mooij correlation.     

Photoluminescence of GaSb under hydrostatic pressure

Photoluminescence measurements on GaSb samples were carried out at low temperatures (2 – 5 K) and high pressures (0 – 9 kbar). The energy shift of the direct gap was determined: $\text{d}\text{E}{}^{\mathrm{\Gamma }}\text{/dP= 14.5± 0.3 meV/kbar}$. At pressures above 8 kbar the spectra showed additional structure from the indirect L-conduction band minima. The energy shift of the L-conduction bands were determined: $\text{d}\text{E}\text{L/d}\text{P}\text{= 5.5± 1. meV/kbar.}$ From these data the critical pressure for the inversion of the two conduction bands was calculated: $\text{p}{}^{\mathrm{h}}{}_{\mathrm{c}}\text{= 10.5 ± 1. kbar}$.     

Infrared cyclotron resonance in InSb,GaAs and Ge in very high magnetic fields

Infrared cyclotron resonance was observed in n-type InSb, GaAs and Ge in very high magnetic fields up to 1.3 MOe at room temperature using a CO₂ laser. A large shift of the cyclotron mass due to the non-parabolicity of the energy band was found in each material. The band edge masses of electrons at room temperature were evaluated to be $\text{m}{}^1\text{= 0.0127 m}$ for InSb, $\text{m}{}^1\text{= 0.065}$m for GaAs and $\text{m}{}^1{}_{\mathrm{t}}\text{= 0.086}$m for Ge. The linewidth was measured in GaAs and Ge in the high fields.     

Impurity conduction and negative magnetoresistance in compensated n type indium phosphide,at low temperature

Electrical resistivity, mobility, magnetoresistance in compensated n type InP with a carrier density n = 7,2 10¹⁶/cm³ have been measured in the temperature range 1,7 K – 100 K, in magnetic fields up to 0,9 Tesla. Under a temperature T_C, which corresponds to the formation of an impurity band in which the electron conduction is metallic, the magnetoresistance becomes negative. Longitudinal and transverse magnetoresistances have similar behaviours. Longitudinal magnetoresistance which is treated here, has the behaviour of a system of paramagnetic spins for which the Curie point is determined. The variation of the negative magnetoresistance versus magnetic field and temperature is quite well approximated by a Langevin function L(u) with $\text{u}\text{=}\text{μ}{}^1\text{B}\text{kT}$; $\text{μ}{}^1\text{=}\text{n}\text{μ}{}_{\mathrm{<mtext>B</mtext>}}$ is the effective magnetic moment where μ_B is the Bohr magneton and n = 5. The value of the effective magnetic moment and the average separation of donors, allow the discussion of the negative magnetoresistance on the basis of the Toyozawa model. Other models are discussed and it seems that in the range of impurity concentrations concerned, the picture of localised moments is more consistant that a “mobility edge” model.     

Electron mobility in high density neon Gas

Preliminary results on electron drift velocity in neon gas at T = 293 K and T = 77.4 K are reported. At the lower temperature, values of field-independent mobility at five different densities have been obtained. From these data the momentum-transfer cross section at ? = 0.01 eV can be calculated to be $\text{σ}{}_{\mathrm{MT}}\text{= 0.29 ± 0.01}\text{A}\text{?}{}^2$.     

Electronic conductivity of AgI using D.C. polarization and charge transfer techniques

A Study of electronic conductivity using the d.c. polarization technique has been carried out in α and β-AgI which shows the former is a hole and the latter an electron conductor. Activation energies of undoped and Cu-doped single crystals and polycrystalline β-AgI were found to be 0.46 eV, 0.34 eV and 0.44 eV respectively and can be related to electron trap depths. The electron transference number ($\text{σ}{}_{\mathrm{\theta }}\text{σ}{}_{\mathrm{t}}$) for polycrystalline β-AgI was found to be 0.008 at 306 K. The activation energy for hole conduction in α-AgI was determined to be 0.97 eV in agreement with previous XPS studies.Transient measurements have also been conducted using the charge transfer technique in double cells of polycrystalline β-AgI. The carrier concentration C_θ and electron mobility μ_θ, have thus been estimated to be 1.8 × $\text{10}{}^{15}\text{cm}{}^3$ and 5.14 × 10^?5$\text{cm}{}^2\text{V}$?sec. respectively at 306 K, while the double layer capacitance was 0.496 $\text{μF}\text{cm}{}^2$.     

Determination of the fermi surface of monoclinic SrAs3 by Shubnikov dehaas effect

The electronic properties of single crystals of monoclinic SrAs₃ have been studied by investigating the temperature dependence of electrical conductivity, Hall effect and Shubnikov de Haas (SdH) oscillations. At 4.2 K, SrAs₃ is predominantly p-conducting with a typical hole concentration of 6 × 10¹⁷cm^-3. The Hall coefficient changes its sign near 80 K. The angular dependence of the SdH oscillations was used to map out the shape of the Fermi-surface of holes. Two asymmetric, quasi-ellipsoidal Fermi-bodies are located in the first Brillouin zone. The cyclotron effective masses $\text{m}{}^1$ for two crystallographic directions were calculated from the temperature dependence of the amplitude of the oscillations: $\text{m}{}^1\text{(B6a)=(0.70± 0.002)m}{}_0$and $\text{m}{}^1\text{(B6c}{}^1\text{)=(0.095±0.003)m}{}_0$, respectively. There are indications for a third Fermi-surface which is attributed to electrons.     

The hopping hall mobility — A percolation approach

We present an averaging procedure for the calculation of the Hall mobility for spatial and energetical disordered hopping systems in the framework of percolation theory. For a constant density of states function the temperature dependence of the Hall mobility follows a $\text{T}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>4</mtext>}}$- law with a slope which is by a factor of about $\text{8}\text{3}$ smaller than that of the conductivity.     

Magnetophonon oscilation of thermoelectric power in the conduction band of tellurium

At about 200K where the Hall coefficient of p-Te reverses its sign, magnetophonon oscillation of electron in the conduction band was observed for the first time in H6c and H⊥c. It was attained by measuring the second derivative of the longitudinal magneto-Seebeck coefficient (?²α₆/?H²). It is found to be explained fairly well by a simple parabolic band model even for H6c. Effective mass values of the conduction band at 200K are deduced on an interpretation; $\text{m}{}^1{}_{\mathrm{\perp }}\text{=0.160m}{}_0$ and $\text{m}{}^1{}_6\text{= 0.072m}{}_0$. Rather large contribution of electron in ?²α₆/?H² may be due to the enhanced electron diffusion in a transition region from p-type to intrinsic as reported recently in p-InSb. This interpretation is supported also by the oscillation of longitudinal magnetoresistance (?²?₆/?H²) which was observed for H6c.     

Mixed conduction in Cr-doped GaAs

Hall-effect and magnetoresistance measurements have been carried out in GaAs : Cr as functions of magnetic field strength (B = 0–18kG) and temperature (T = 125–420°K). Independent solutions for the mobilities, μ_n and μ_p, and the carrier concentrations, n and p, are obtained from the basic mixed-conductivity equations. These quantities, as well as the intrinsic carrier concentration, n_i are then calculated as a function of temperature for one sample, and subsequent analysis yields the following values in the range T = 360–420°K: an acceptor (presumably Cr) energy E_A = 0.69±0.02eV (from the valence band); the bandgap energy E_g = E_g0 + αT, with E_go = 1.48±0.02eV, $\text{α ? 3.2 × 10}{}^{\mathrm{?4}}\text{eV}\text{°}\text{K}$; $\text{μ}{}_{\mathrm{n}}\text{= 2700± 100}\text{cm}{}^2\text{V}\text{sec}$, decreasing slightly with temperature; = 350± 50 $\text{cm}{}^2\text{V sec}$; and an acceptor-to-donor concentration ratio, itN_A/N_D?8. The electron mobility appears to be limited by neutral impurity scattering, with N_A ? 2 × 10¹⁶cm^?3. Several other samples were also investigated but as a function of temperature only (at B = 0). At room temperature both positive (p-type) and negative (n-type) Hall coefficients were observed.     

Evidence for stress-induced decoupling of valence bands in GaSb from galvanomagnetic measurements

The behavior of p-GaSb has been examined using uniaxial compressional stresses up to $\text{10}{}^{10}\text{dyn}\text{cm}{}^2$ in the temperature range 50–300°K. Hall effect and resistivity results are interpreted in terms of decoupling of the valence bands, and reduction of the impurity activation energies.     

Anisotropic magnetic susceptibility and phase transitions in intercalated graphite: KC24

We measured the magnetic susceptibility of KC₂₄ from 4.2 to 300 K and found no anomalies near the phase transitions at 95 and 123 K as observed in the resistivity. We conclude that the transitions must be due to order- disorder transitions of the K atoms and not charge density wave formation. The susceptibility is anisotropic; at room temperature $\text{χ}{}_{\mathrm{g}}\text{(}\text{H}\text{6}\text{c}\text{)= + 1.50 × 10}{}^{-6}\text{emu g}{}^{-1}\text{± 2\%}$ and $\text{χ}{}_{\mathrm{g}}\text{(}\text{H}\text{⊥}\text{c}\text{)= + 0.045 × 10}{}^{-6}\text{emu g}{}^{-1}\text{± 50\%}$. This anisotropy is not understood in terms of simple rigid band extensions of the band structure of graphite.     

The spin polarization of conduction electrons in ferromagnetic semiconductors

Within the framework of the s?f exchange model the exact asymptotics of the spin polarization of conduction electrons in the non-degenerate ferromagnetic semiconductor at low temperatures is calculated. It is demonstrated that the temperature dependent corrections to the total density of states are proportional to $\text{T}{}^{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}$.