Thermoreflectance spectra of Cd3As2

The near normal incidence thermoreflectance spectra of Cd₃As₂ have been investigated at room temperature and liquid nitrogen temperature in the spectral range 2.5–6.2 eV.     

Magnetoplasma reflectivity studies on Cd3As2

Magnetoplasma reflectivity measurements were performed on Cd₃As₂ in order to obtain more experimental details about the structure of the plasma reflectivity edge. The experimental results can be explained by assuming the existence of a surface layer with a carrier concentration-gradient which is responsible for optical interference effects.on leave from Dept. of Physics, University of Technology, 5600 MB, Eindhoven, the Netherlandson leave from University of Würzburg, D8700, Würzburg, FRG     

Direct and indirect optical transitions in Zn3P2

Absorption measurements were made on single crystals of Zn₃P₂ at temperatures of 300, 80 and 5 K, and photo-voltage spectral responses-were measured at 300 K for Au- and In---Zn₃P₂ contacts. Interband absorption was interpreted as a process involving three mechanisms: (1) indirect transitions from the valence band at the Γ point, (2) either excitations from acceptor level to the conduction band at the Γ point, or second indirect transitions associated with the creation of excitons, and (3) band-to-band direct transitions at the Γ point. The effect of the lighting configuration on spectral PV plots is also discussed, and the origin of two peaks of PV responses is interpreted as being in accordance with optical data. The indirect energy gap has been estimated as 1.315eV at 300 K and 1.335 eV at 80 and 5 K, and the direct one as 1.505, 1.645 and 1.685 eV at 300, 80 and 5 K, respectively.     

Phase transition in Cd2Ta2O7 and the Cd2Nb2−xTaxO7 series

A phase transition has been discovered in Cd₂Ta₂O₇ near 200 K which is about the same temperature at which Cd₂Nb₂O₇ is known to become ferroelectric. However, Cd₂Ta₂O₇ does not become ferroelectric below this transition. The nature of this transition was also studied in the Cd₂Nb_2?xTa_xO₇ series using low temperature X-ray, SHG, and DSC techniques.     

Fundamental reflectivity spectra of monocrystalline and polycrystalline bulk Cd3As2

Fundamental reflectivity spectra of mono and polycrystalline bulk samples of Cd₃As₂ in the energy range 0.8 – 5.9 eV are measured. The results are compared with existing experimental data and are interpreted on the basis of Lin-Chung model.     

Non-colinear magnetic structure of U3P4 and U3As4

Neutron diffraction experiments have been performed on single crystal samples of U₃P₄ and U₃As₄. The magnetic ordering is found to be a non-collinear three axial structure in which magnetic moments of U⁴⁺ ions are tilted from the [111] axis by an angle of about twenty degrees within (110) planes.     

Semiconductor-metal transition in novel Cd2Os2O7

Cd₂Os₂O₇ has been prepared for the first time and has the pyrochlore structure with a cubic cell edge of 10.17 Å at room temperature. Electrical, magnetic, and DSC measurements on single crystals of this compound show a sharp transition at 225 K which we interpret to be an electronic, second-order, metal-semiconductor transition. The low-temperature semiconducting phase is probably antiferromagnetic.     

The role of vacancies in the band structure of Cd3As2

Using the pseudopotential method we have studied the effect of the vacant Cd-atom sites on the band structure of Cd₃As₂. The previous calculations of Lin-Chung were based on a hypothetical flourite structure and did not take account of the distribution of vacancies nor of spin-orbit coupling We have first extended Lin-Chung's model to include spin-orbit coupling and then used the results as a starting point in calculations in which the vacancy potentials are treated by the method of perturbations. The change involved in the behaviour of the electronic bands in passing from the hypothetical fluorite structure to the real structure has been discussed.     

ESR of Cu2+ in the high pressure form of Cd3(PO4)2

ESR spectra of polycrystalline Cu²⁺ doped samples of the high pressure phase of Cd₃(PO₄)₂ were characteristic of the existence of two different paramagnetic centres. The spin—Hamiltonian constants of both defects were determined. Only two of the three possible substitutional cation sites are occupied by copper ions.     

Synthesis and characterization of Zn3P2/ZnS core/shell nanowires

Fully-surrounded Zn₃P₂/ZnS core/shell nanowires (NWs) were synthesized for the first time via a two-step method: a catalyst free chemical vapor deposition followed by a low-pressure vulcanization process. Field emission scanning electron microscopy, high-resolution transmission electron microscopy, and high-angle angular dark field scanning transmission electron microscopy were used to characterize the morphologies, crystal structure, and element composition of the core/shell NWs. The band structure analysis demonstrates that the Zn₃P₂/ZnS core-shell NW type-II heterostructures have bright potential in photovoltaic nanodevice applications. The core/shell NW growth method used here can be extended to other material system.     

The elastic behaviour of the ternary zincblende structure semiconductor CuGe2P3

A single crystal has been grown of CuGe₂P₃, a ternary semiconductor with a zincblende structure in which the copper and germanium atoms are randomly distributed on the cation sites. The second order elastic constants measured by the ultrasonic pulse echo overlap technique (C₁₁ = 13.66, C₁₂ = 6.17, C₄₄ = 6.66 and bulk modulus B = 8.67 in units of 10¹⁰Nm^?2 at 291 K) are closely similar to those of GaP and conform well to Keyes' correlation for zincblende structure crystals. The hydrostatic pressure derivatives of the second order elastic constants ($\text{?C}{}_{11}\text{?P}\text{= 4.40}$, $\text{?C}{}_{12}\text{?P}\text{= 3.9}$, $\text{?C}{}_{44}\text{?P}\text{= 0.93}$ and $\text{?B}\text{?P}\text{= 4.07}$) and the third order elastic constants (C₁₁₁ = ? 8.45, C₁₁₂ = ? 3.49, C₁₂₃ = ? 1.13, C₁₄₄ = ? 2.82, C₁₅₅ = ? 1.44 and C₄₅₆ = ? 0.69 in units of 10¹¹Nm^?2) also resemble those of GaP: even the anharmonicity of the long wavelength acoustic modes of this ternary semiconductor resembles that of its binary “parent” compound. The positive signs of the hydrostatic pressure derivatives and the negative signs of the third order elastic constants show that the acoustic modes at the long wavelength limit stiffen under pressure, an effect which is quantified here by computation of the mode Grüneisen parameters, which are all positive. The harmonic and anharmonic force constants, obtained in the valence force field model, fit well into the pattern shown by related zincblende structure compounds: the ratio ($\text{β}\text{α}$) for bond bending (β) to stretching (α) force constants is greater than 4:1; the dominating anharmonic force constant is γ: most of the anharmonicity is associated with nearest neighbour atoms. Analysis of the temperature dependence of the elastic constants on the basis of a simple anharmonic model again emphasises the similarity between the elastic behaviour of CuGe₂P₃ and GaP. The thermal expansion of CuGe₂P₃ varies almost linearly with temperature between 291 K and 1000 K, the linear coefficient of thermal expansion α being 8.21 ± 0.02 × 10^?6 °C^?1. The similar lattice parameters and elastic behaviour of CuGe₂P₃ and GaP indicate that semiconducting devices made of epitaxial deposits of CuGe₂P₃ on a GaP substrate should prove to be almost strain-free.     

Magnetic structure of the cubic U2Te3 with a non-stoichiometric Th3P4 type of structure

The neutron diffraction patterns of the cubic U₂Te₃ have been obtained at 15 and 150 K. There are no extrapeaks of magnetic origin below the Curie point T_c = 70 ± 5 K. Thus the ordering corresponds to a collinear ferromagnetic structure. The value of the magnetic moment is 1.78 μ_B which is close to those values determined for a few cubic uranium pnictides and chalcogenides.     

Single crystal synthesis and electrical properties of CdSnO3, Cd2SnO4, In2TeO6 and Cdln2O4

Single crystals of CdSnO₃, Cd₂SnO₄, ln₂TeO₆ and CdIn₂O₄ were grown by either flux or high pressure methods. High electrical conductivity resulted from chemical substitution or oxygen deficiency. Crystallographic and conductivity data are given.     

Specific heat of EuIn2P2 at high magnetic fields

We have carried out specific heat measurements on EuIn₂P₂ at high magnetic fields perpendicular to the c-axis in the hexagonal crystal structure in order to understand its thermal properties. The temperature dependence of the specific heat exhibits a clear λ-type anomaly due to a magnetic transition at , indicating that the magnetic transition is of second-order. The λ-type anomaly becomes markedly broader with increasing the magnetic field. This remarkable field-dependence is consistent with the results of previous magnetization measurements which suggest that Eu²⁺ magnetic moments align ferromagnetically perpendicular to the c-axis below T_C. In addition, a hump in the specific heat is observed around 7 K, which can be ascribed to the Zeeman splitting of the Eu²⁺ multiplet by internal magnetic fields.     

Magnetic and transport properties of Mn-doped Bi2Se3 and Sb2Se3

We report on the single crystal growth and thermoelectric and magnetic properties of Mn-doped Bi₂Se₃ and Sb₂Se₃ single crystals prepared by the temperature gradient solidification method. The composition and crystal structure were determined using electron probe microanalysis and θ–2θ powder X-ray diffraction studies, respectively. The lattice constants of several percent Mn-doped Bi₂Se₃ and Sb₂Se₃ were slightly smaller than those of the undoped sample due to the smaller Mn atomic radius (1.40 Å) than those of Bi (1.60 Å) and Sb (1.45 Å). Mn-doped Bi₂Se₃ and Sb₂Se₃ showed spin-glass and paramagnetic properties, respectively.     

Electrical transport and magnetic properties of La2/3Ca1/3MnO3/SiO2 composites

The influence of SiO₂ on the electrical transport properties of LCMO/SiO₂ composites with different SiO₂ contents x is investigated, where LCMO represents La_2/3Ca_1/3MnO₃. Results show that the SiO₂ phase not only shifts the metal–insulator transition temperature (T_p) to a high temperature range, but also has an effect on the magnetoresistance (MR) of the composites. The temperature dependence of resistivity indicates that the T_p of the composites is obviously higher than that of pure LCMO, and that the peak resistivity ρ_max of the composites is lower than that of pure LCMO. In the SiO₂ content x∼0.02, the T_P is the highest and ρ_max becomes the lowest. The experimental observation is discussed on the basis of the analysis of scanning electron microscopy (SEM) images and X-ray diffraction (XRD) patterns. Compared with pure LCMO, a possible interpretation is presented by considering the influence of SiO₂ on the coupling between ferromagnetic (FM) domains of LCMO.     

Electronic structure and chemical bonding of phosphorus-contained sulfides InPS4, TI3PS4, and Sn2P2S6

The electronic structure of phosphorus-contained sulfides InPS₄, Tl₃PS₄, and Sn₂P₂S₆ was investigated experimentally with X-ray spectroscopy and theoretically by quantum mechanical calculations. The partial densities of electron states calculated with the ab initio multiple scattering FEFF8 code correspond well to their experimental analogues—the X-ray K- and L_2,3-spectra of sulfur and phosphorus. The good agreement between theory and experiment was also achieved for K-absorption spectra of S and P in the investigated sulfides. In spite of the difference in the crystallographic structure of InPS₄, TI₃PS₄, and Sn₂P₂S₆ that influence the form of K-absorption spectra, the electronic structure of their valence bands are rather similar. This is due to the strong interaction of the P and S atoms, which are the nearest neighbors in the compounds studied. The electron densities of p- and s-states of phosphorus are shifted by about 3 eV to lower energies in comparison to the analogous electron states of sulfur. This is connected with the greater electro-negativity of sulfur, and is confirmed by the calculated electron charge transfer from P to S.     

Some Raman bands of C3O2

The ν₁, ν₅, 2ν₅, and 2ν₆ Raman band accumulations of carbon suboxide, C₃O₂, have been photographed with a resolution of 0.2–0.3 cm^?1. Each band accumulation consists, in addition to the main band, of a large number of “hot” bands due to the extremely low, highly anharmonic ν₇ fundamental vibration. In the 2ν₆ band accumulation a few series of unresolved Q branches have been assigned. In the ν₁ and 2ν₅ band accumulations most Q branches almost coincide, forming a very intense peak, whereas the dominating feature of the ν₅ band accumulation is a minimum, in agreement with the expectation of an extremely weak Q branch for a Π_g fundamental band. Tentative values of ν₁ = 2196.9 ± 0.1 cm^?1 and ν₅ = 580.2 ± 0.5 cm^?1 as well as several energy values in the ν₇ manifold of the 2ν₆⁰ state are obtained. Further, improved exposures of the ν₂ + 2ν₇⁰ band accumulation yield some levels in the ν₇ manifold of the ν₂ state, in addition to those determined previously.     

Cr3+掺杂的Cd3Al2Ge3O12光谱特性及晶场参数计算

采用高温固相法合成了Cd₃Al₂Ge₃O₁₂：Cr³⁺多晶材料,利用X射线衍射对其结构进行了分析,通过Cr³⁺的室温吸收光谱、室温和77K发射光谱分别对其光谱特性和晶场参数进行了分析和计算.结果表明：在450 nm的蓝光激发下,Cd₃Al₂Ge₃O₁₂：Cr³⁺室温发 关键词： 3Al₂Ge₃O₁₂：Cr³⁺')" href="#">Cd₃Al₂Ge₃O₁₂：Cr³⁺ 荧光光谱 晶场参数 可调谐激光     

Some crystallography,chemistry, physics,and thermodynamics of B12O2, B12P2, B12As2, and related alpha-boron type crystals

This paper shows that several alpha-boron type compounds may be useful as high-temperature semiconductors with decent carrier motilities, high electrical resistivity, good optical transparency, good stability under high radiation bombardment, and possess high neutron capture cross-sections. The most promising are B₁₂O₂, B₁₂P₂, and B₁₂As₂. Their relationship to alpha-boron, B₁₃C₂, and other derivative crystals is explained. A study of their chemical and thermodynamic properties indicates how single crystals useful for electronic devices can be grown.