High power semiconductor laser array with single-mode emission

The semiconductor laser array with single-mode emission is presented in this paper. The 6-μ m-wide ridge waveguides (RWGs) are fabricated to select the lateral mode. Thus the fundamental mode of laser array can be obtained by the RWGs. And the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A, after that, a kink will appear. The slow axis (SA) far-field divergence angle of the unit is 13.65°. The beam quality factor M² of the units determined by the second-order moment (SOM) method, is 1.2. This single-mode emission laser array can be used for laser processing.     

Digital wavelength switching by thermal and carrier injection effects in V-coupled cavity semiconductor laser

Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26- and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.     

Optical switching of semiconductor laser amplifiers

The underlying physics of optical switching in bistable diode-laser amplifiers is reviewed. The importance of minimizing the switching energy of optical bistable devices is emphasized. It is shown that conventional diode-laser amplifiers are switched with only thousands of photons in less than a nanosecond. Recent developments in single quantumwell lasers allow switching with total energy (including electronic) less than a picojoule.     

Transient dynamics of a single-mode semiconductor laser subjected to both optical feedback and external light injection

The transient dynamics of a single-mode semiconductor laser subjected to both weak optical feedback and light injection is studied. Even at detuning values for which injection locking is not effective, turn-on jitter and frequency jitter can still be strongly reduced by adjusting either the length of the external cavity or the detuning.     

Polarization properties of a single-mode gas laser in transverse magnetic fields

The effect of transversally applied magnetic fields on the polarization behavior of a single-mode gas laser is theoretically investigated, stressing the importance of the additivity of respective contributions influencing the time evolution of polarization parameters. By adding a new element to the existing theory, namely the contribution of magnetic-field-free regions in the active medium, and by considering the relatively large effects that small cavity anisotropies can cause, several apparent discrepancies between experiments and existing theory are resolved.     

Polarization switching and synchronization of mutually coupled vertical-cavity surface-emitting semiconductor lasers

Polarization switching (PS) dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers (VCSELs) are studied theoretically in this paper. A group of dimensionless rate equations is derived to describe our model. While analysing the PS characteristics, we focus on the effects of coupling rate and frequency detuning regarding different mutual injection types. The results indicate that the x-mode injection defers the occurrence of PS, while the y-mode injection leads the PS to occur at a lower current. Strong enough polarization-selective injection can suppress the PS. Moreover, if frequency detuning is considered, the effects of polarization-selective mutual injection will be weakened. To evaluate the synchronization performance, the correlation coefficients and output dynamics of VCSELs with both pure mode and mixed mode polarizations are given. It is found that performance of complete synchronization is sensitive to the frequency mismatch but it is little affected by mixed mode polarizations, which is opposite to the case of injection-locking synchronization.     

光脉冲注入下VCSEL的偏振开关特性

基于描述主、副垂直腔表面发射激光器（M-VCSEL,S-VCSEL）动态特性的速率方程,研究了M-VCSEL在脉冲电流调制下,输出光脉冲的偏振特性,以及S-VCSEL在M-VCSEL输出光脉冲的注入下,其偏振开关特性.研究结果表明：M-VCSEL在周期性脉冲电流的作用下,将产生周期性光脉冲输出;S-VCSEL在该光脉冲的注入下,输出光将在两个互相垂直的方向之间发生周期性转化,且变化周期与M-VCSEL所受到的调制脉冲电流周期相同;通过改变M-VCSEL驱动脉冲电流的调制幅度,可控制S-VCSEL输出的垂直偏振抑制比. 关键词： 垂直腔表面发射激光器（VCSEL） 光脉冲 偏振开关     

外光注入半导体激光器实现时钟分频

从理论和实验上研究了利用光注入半导体激光器对高重复速率光脉冲产生的周期振荡和时钟分频现象.结果表明，光注入半导体激光器引起的二倍周期振荡是使注入脉冲重复频率分频的直接原因.通过耦合速率方程，数值模拟了半导体激光器在外光注入时输出光的时间序列和功率谱，并且分析了激光腔内各种周期振荡的特征.研究表明，当注入光使半导体激光器出现稳定的二倍周期振荡，且注入光的重复频率为此振荡频率的二倍时，时钟分频即可产生实验中，采用重复频率为6.32GHz的光脉冲注入Fabry-Perot激光器，实现了3.16GHz时钟分频信号 关键词： 周期振荡 时钟分频 光谱侧带 光注入     

半导体激光器与单模光纤耦合效率的分析

在高斯场分布近似的前提下,从模场半宽匹配的角度描述了半导体激光器（ＳＬＤ） 与单模光纤（ＳＭＦ） 之间的光耦合理论。对不同的ＳＬＤ ＳＭＦ 间光耦合的方式作了分析,并从耦合效率与成本双重角度给出了适合于实际工程应用的几种耦合方式的优选率     

Interferometric monitoring of single-mode operation of a tunable injection laser

We propose a technique for rapid monitoring of single-mode operation of a tunable injection laser, based on analysis of the fine structure of the power-current characteristic obtained with self-heterodyning, using a Michelson interferometer. The technique makes it possible to determine the range for single-mode lasing and mode tuning as well as the presence of spurious optical feedback, and to estimate the coherence length. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 119–123, January–February, 2006.     

Stochastic resonance in single-mode semiconductor lasers

Owing to the considerable virtues of semiconductor lasers for applications, they have become the main optical source for fiber communication systems recently. The behavior of stochastic resonance (SR) in direct-modulated semiconductor laser systems is investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the modulated laser system were calculated using the linear approximation method. We found that the SR always appears in the dependence of the SNR upon the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated semiconductor laser systems and improve the quality of optical communication.     

Multipulse excitability in a semiconductor laser with optical injection

An optically injected semiconductor laser can produce excitable multipulses. Homoclinic bifurcation curves confine experimentally accessible regions in parameter space where the laser emits a certain number of pulses after being triggered from its steady state by a single perturbation. This phenomenon is organized by a generic codimension-two homoclinic bifurcation and should also be observable in other systems.     

Polarization mode coupling in long single-mode fibres

In this paper we look at the polarization state evolution of light propagating in long, birefringent, single-mode fibres in the presence of mode coupling. We show first that there always exist two orthogonal linear input polarizations which lead to linear output polarization for monochromatic light. The applicability of the coupled power equations is discussed and it is shown that they cannot be used with only two propagating modes. A more detailed analysis is then carried out for a uniform coupling and the effect of the spectral width of the source is investigated. Some insight into the time-dependent propagation is also given. Experimental results illustrate the theoretical considerations.     

用半导体环形激光器产生混沌信号

提出了一种由一个分布式反馈激光器为主激光器和一个半导体环形激光器为从激光器组成的主从式激光混沌系统方案,主激光器产生的光单向注入到从激光器中,通过调整注入系数、主从激光器的失谐频率和从激光器的偏置电流,使从激光器工作在混沌状态,输出混沌信号。从基于光注入条件下的环形激光器的速率方程组入手,数值模拟了主从激光器的失谐频率、注入系数和从激光器的偏置电流3个工作参量对从激光器输出动态的影响。研究表明：外光注入条件下,半导体环形激光器可以产生混沌信号。通过分析得出:当失谐频率为3.9 GHz、注入系数为0.07、偏置电流为81 mA时,环形激光器可以产生功率谱平坦、带宽较宽的高质量混沌信号。     

用半导体环形激光器产生混沌信号

提出了一种由一个分布式反馈激光器为主激光器和一个半导体环形激光器为从激光器组成的主从式激光混沌系统方案,主激光器产生的光单向注入到从激光器中,通过调整注入系数、主从激光器的失谐频率和从激光器的偏置电流,使从激光器工作在混沌状态,输出混沌信号。从基于光注入条件下的环形激光器的速率方程组入手,数值模拟了主从激光器的失谐频率、注入系数和从激光器的偏置电流3个工作参量对从激光器输出动态的影响。研究表明:外光注入条件下,半导体环形激光器可以产生混沌信号。通过分析得出:当失谐频率为3.9 GHz、注入系数为0.07、偏置电流为81 mA时,环形激光器可以产生功率谱平坦、带宽较宽的高质量混沌信号。     

Excitability in a quantum dot semiconductor laser with optical injection

We experimentally analyze the dynamics of a quantum dot semiconductor laser operating under optical injection. We observe the appearance of single- and double-pulse excitability at one boundary of the locking region. Theoretical considerations show that these pulses are related to a saddle-node bifurcation on a limit cycle as in the Adler equation. The double pulses are related to a period-doubling bifurcation and occur on the same homoclinic curve as the single pulses.