Improving the Performance of TIPS-pentacene Thin FilmTransistors via Interface Modification

Understanding the structure-performance relationship is crucial for optimizing the performance of organic thin film transistors. Here, two interface modification methods were applied to modulate the thin film morphology of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene). The resulting different film morphologies and packing structures led to distinct charge transport abilities. A substantial 40-fold increase in charge carrier mobility was observed on the octadecyltrichlorosilane(OTS)-modified sample compared to that of the transistor on the bare substrate. A better charge mobility greater than 1 cm²·V^-1·s^-1 is realized on the p-sexiphenyl(p-6P)- modified transistors due to the large grain size, good continuity and, importantly, the intimate π-π packing in each domain.     

Solution-grown aligned crystals of diketopyrrolopyrroles(DPP)-based small molecules:Rough surfaces and relatively low charge mobility

Field-effect transistors(FETs) of three diketopyrrolopyrroles(DPP)-based small molecules, 3,6-bis(5-phenylthiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolopyrrole-1,4-dione(PDPPP), 3,6-bis(5-(4-fluorophenyl)thiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo pyrrole-1,4-dione(FPDPPPF) and 3,6-bis(5-(4-n-butylphenyl)thiophene-2-yl)-2,5-bis(2-ethylhexyl)pyrrolo pyrrole-1,4-dione(Bu PDPPPBu), have been studied in this work. Well aligned crystals of the three molecules were grown from para-xylene by droplet-pinned crystallization method. FETs based on these aligned crystals exhibit a hole mobility up to0.19 cm~2 V 1s 1and electron mobility up to 0.008 cm~2 V 1s 1. The achieved hole mobility is of the same order of magnitude as reported highest hole mobility for DPP-based small molecules, but it is much lower than that of the high-performance DPP-based polymers. The relative low mobility is mainly attributed to the rough crystal surfaces with steps and, thus, non-smooth charge transport channels at the interfaces between the crystals and the dielectrics. This work has implications for understanding the low charge mobility of DPP-based small molecules.     

High performance organic transistors and phototransistors based on diketopyrrolopyrrole-quaterthiophene copolymer thin films fabricated via low-concentration solution processing

Herein, highly crystalline diketopyrrolopyrrole-quaterthiophene copolymer thin films were achieved by a simple low-concentration solution processing with a little material waste, which exhibit efficient charge transport and optoelectronic properties for constructing high performance OFET and phototransistors.     

聚(茚并芴-三苯胺)的合成及性能

设计并合成了一类新的可用于有机场效应晶体管(OFET)的聚合物半导体材料聚(茚并芴-三苯胺)(pIFTPA1~4), 通过核磁共振谱和凝胶渗透色谱等对聚合物进行了表征, 同时对其场效应薄膜晶体管性能进行了测试. 结果表明, 这些聚合物形成了无定形半导体膜, 在空气中稳定, 其载流子迁移率远高于聚三苯胺(pTPA)类材料, 其中pIFTPA1载流子迁移率高达4×10^-2 cm²/(V·s), 开关比为10⁶.     

Crystals Array via Oriented Nucleation and Growth Induced by Smectic E Mesophase of C7-T-BTBT

Long-range order crystalline thin films of organic semiconductors have attracted wide attention owing to their high charge carrier mobility. However, uncontrolled crystal nucleation and growth during the thin film drying process cause the formation of grain boundaries, thereby limiting the long-range order. Herein, we achieved the oriented nucleation and growth of organic semiconductors by off-centre spin-coating at the temperature of the smectic E(SmE) liquid crystal mesophase, and then followed by Ostwald ripening during solvent vapour annealing. The thin film of 2-(5-heptylthiophen-2-yl)[1]benzothieno[3,2-b] [1]benzothiophne (C7-T-BTBT) blended with 40%(mass fraction) poly(methyl methacrylate)(PMMA) was prepared by off-centrespin-coating at SmE mesophase(170℃), followed by solvent vapour annealing in chloroform for 24 h(chloroform is a good solvent for C7-T-BTBT and PMMA). The C7-T-BTBT molecules grew to rod-like crystals, which were mostly arranged parallel to each other. The crystal growth was perfect and resulted in a single crystal. The average length of the crystals was approximately 87 μm. Moreover, the highest charge carrier mobility is 1.62 cm²·V⁻¹·s⁻¹ as against that of the film prepared at 25℃(0.06 cm²·V⁻¹·s⁻¹).     

Low-molecular-mass anion screening for forensic environmental analyses by capillary zone electrophoresis with indirect UV detection

A method for low-molecular-mass anion screening is described using a buffer composed of 5-sulfosalicylate (SS) as a visualizing ion, hexadimethrine bromide as an electroosmotic flow modifier and Tris as a pH buffer component, at pH 8.6. All ions with effective mobility higher than 2610⁻⁹ m² s⁻¹ V⁻¹ can be separated within 7.5 min under −30 kV. By using the moderately mobile SS (5410⁻⁹ m² s⁻¹ V⁻¹), not only the sensitivity of the detection is improved due to its high UV absorptivity, but also a smaller overall overloading effect is achieved. Meanwhile, the resolution of the high mobility ions, which is normally critical, remains almost the same as compared to a chromate buffer. With an electrokinetic injection, the limit of detection (LOD) of the common ions is 2–13 nM and the detection range is linear up to 0.5–3 μM. With a hydrostatic injection the LOD is 0.15–1 μM and the detection range is linear up to 25–200 μM. The identification of ions is performed by comparing the mobility of the ions with that of standards, taking the apparent and effective mobility of HCO₃⁻, which is normally present in the sample solution, as a reference.     

有机半导体图案化成膜中的马兰戈尼与咖啡环效应协同作用

有机场效应晶体管在柔性传感和显示驱动应用中展示出极大的潜力,但在大面积制备高性能有机薄膜及有机场效应晶体管方面仍面临大的挑战。本文介绍了一种利用等离子处理和马兰戈尼-咖啡环效应协同作用来图案化生长有机半导体薄膜的方法。经过对等离子体处理时间、混合溶剂的比例及溶液浓度等生长条件优化,在5 cm×5 cm的基片上得到了覆盖性较为完整的2,7-二辛基[1]苯并噻吩并[3,2-b]苯并噻吩(C8-BTBT)薄膜阵列。基于此薄膜构筑了底栅顶接触晶体管阵列,器件的平均迁移率达到7.9 cm~2·V~(-1)·s~(-1),阈值电压均小于-2 V,开关电流比大于10~4。本工作对未来大面积制备高性能有机半导体薄膜及晶体管具有一定的借鉴意义。     

2,6-Bis[2-(4-pentylphenyl)vinyl]anthracene: a stable and high charge mobility organic semiconductor with densely packed crystal structure

The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This paper presents the design, synthesis, optical and electrochemical characterization, crystal packing, modeling and thin film morphology, and organic thin film field effect transistor (OTFT) device data analysis for a novel 2,6-bis[2-(4-pentylphenyl)vinyl]anthracene (DPPVAnt) organic semiconductor. We observed a hole mobility of up to 1.28 cm2/V.s and on/off current ratios greater than 107 for OTFTs fabricated using DPPVAnt as an active semiconductor layer. The mobility value is comparable to that of the current best p-type semiconductor pentacene-based device performance. In addition, we found a very interesting relationship between the charge mobility and molecule crystal packing in addition to the thin film orientation and morphology of the semiconductor as determined from single-crystal molecule packing study, thin film X-ray diffraction, and AFM measurements. The high performance of the semiconductor ranks among the best performing p-type organic semiconductors reported so far and will be a very good candidate for applications in organic electronic devices.     

激光刻蚀模板中电沉积特殊结构CIGS薄膜

本文利用激光刻蚀模板,在水溶液中电沉积制备金属铜薄膜,讨论了温度、电流、硫酸铜浓度对薄膜形貌的影响. 采用SEM对制备的铜薄膜进行表征,结果表明在沉积温度为30 ℃,沉积电流为4 A·dm^-2(表观工作电流密度),硫酸铜浓度在20 ~ 50 g·L^-1的水溶液中电沉积可以得到中空馒头状和开口碗状结构的铜薄膜. 利用激光刻蚀模板,在离子液体1-丁基-3-甲基咪唑三氟甲磺酸盐([BMI][TfO]) - 30 Vol%丙醇混合电解质中电沉积CIGS薄膜,研究了沉积电势、沉积时间对薄膜形貌的影响. SEM观察发现,在沉积电势为-1.8 V,沉积时间为1.5 h条件下电沉积可以得到近似柱状的簇状花束样的CIGS薄膜, 电沉积铜后再进一步电沉积CIGS,得到了均匀有序的鼓包柱状结构的Cu/CIGS复合薄膜. 用恒电势方波法对制备的薄膜真实表面积进行测试,计算结果表明,与无模板电沉积制备的CIGS薄膜相比,激光刻蚀模板法制备的Cu/CIGS复合薄膜的表面积提高了约8倍.     

Structural phase transitions in organized organic thin films built of alkali stearates

Temperature-dependent structure modification of organised organic thin films (OOTF) built of sodium (NaSt) and lithium (LiSt) stearates was investigated by DSC and vibrational spectroscopy. Structural phases found for the bulk specimens of substances by DSC measurements, correspond to those previously known [1]. The pre-transitional structural changes observed for thin films in the first crystalline phase were investigated by using temperature dependent FTIR spectroscopy. Changes in orientation of stearate long axis and alkyl chain conformation in NaSt and LiSt thin films with temperature are reported. It was found that film heating from 20 up to 110°C leads to decrease of the tilt of alkyl radicals with respect to the surface for NaSt films. With temperature increasing, in the IR absorption spectra of NaSt and LiSt films, the frequency of methylene symmetric C-H stretching IR band change from 2849 to 2851 cm⁻¹ upon the temperature variation in the range 70–90°C and at 100°C, respectively. This indicates the onset of partial melting of the chains at this temperatures which are lower as compared to those of bulk specimens. It is suggested that this may be caused by a peculiar structural organisation of the films near the substrate surface.     

基于三维多孔石墨烯/含钛共轭聚合物复合多孔薄膜的柔性全固态超级电容器

采用Fe~(3+)离子交联的方法制备氧化石墨烯水凝胶,经化学还原制备出一种新型的三维多孔石墨烯薄膜材料命名为rGO-Fe;通过电化学聚合法在rGO-Fe基底上进一步制备了一种三维多孔石墨烯/含钛共轭聚合物复合薄膜材料,命名为r GO-Fe/P(EDOT:P3C)-1-Ti。作为一种新型复合薄膜材料,rGO-Fe/P(EDOT:P3C)-1-Ti较rGO-Fe具有更好的抗拉伸性能,平均厚度为3μm的rGO-Fe/P(EDOT:P3C)-1-Ti薄膜,可承受载荷拉力0.97 N,优于相同厚度的rGO-Fe薄膜(0.76 N)。将rGO-Fe/P(EDOT:P3C)-1-Ti薄膜作为自支撑电极制备了柔性全固态超级电容器,表现出优良的电容性能,且在弯折状态下仍能正常工作。当电流密度为0.1 A?g~(-1)时,该柔性全固态超级电容器的质量比容量为71.13?F?g~(-1),面积比容量为101 mF?cm~(-2),当电流密度为0.6 A?g~(-1)时,其质量比容量为18.14 F?g~(-1),面积比容量为25.8 mF?cm~(-2)。     

Novel n-channel organic semiconductor based on pyrene-phenazine fused monoimide and bisimides

Large-conjugated pyrene-phenazine monoimide and bisimides were synthesized. Their self-assembly behavior, electric properties, and colorimetric acid sensing performance were investigated.     

The role of halogen bonding in improving OFET performance of a naphthalenediimide derivative

A naphthalenediimide derivative (1) was designed and synthesized as a halogen bonding (XB) donor that is capable of forming complementary XBs with 2,2-dipyridine or 2,2-bipyrimidine acceptor. The XB interactions in the complexes (1/2,2-dipyridine and 1/2,2-bipyrimidine) significantly improved their OFET performance relative to the devices based on pure 1, with the average electron mobility increased more than doubled.     

Synthesis and characterization of novel push-pull oligomer based on naphthodithiophene-benzothiodiazole for OFETs application

A novel push-pull oligomeric semiconductor, ENBT based on naphthodithiophene-benzothiodiazole was successfully designed and synthesized. ENBT was fully characterized by ¹H NMR, MS, thermogravimetric analysis (TGA), UV–vis spectra, and cyclic voltammetry (CV). Furthermore, ENBT-based OFETs were fabricated by solution-processed dip-coating technique and its charge transporting property was investigated. The film of ENBT exhibited a hole mobility as high as 1.4?×?10^?2?cm²/(Vs) with a current on/off ratio of 10⁶–10⁷ after annealed at 160?°C. In order to give an insight to the transporting property of ENBT films, thin film morphologies after annealing at different temperatures were also studied by atomic force microscopy (AFM).     

印刷半导体碳纳米管薄膜晶体管光电性能研究

本文研究了聚[(2,7-9,9-二辛基芴基)-4,7-双(噻吩-2-基)苯并-2,1,3-噻二唑]（PFO-DBT）分离的半导体碳纳米管薄膜晶体管的光电性能。在超声和高速离心辅助下,PFO-DBT能够从商业化单壁碳纳米管中选择性分离出高纯的半导体碳纳米管。用得到的半导体碳纳米管溶液通过气溶胶喷墨印刷方法构建出高性能印刷薄膜晶体管器件。印刷碳纳米管薄膜晶体管表现出高的开关比（10⁷）和高迁移率（15.6 cm²·V^-1·s^-1）。并且所有制备的印刷薄膜晶体管具有很好的光敏感特性和很好的稳定性。     

Electronic Structure Effect of Polythiophene Derivatives and Nano N-Zn-Ag/TiO2 on Performance of Organic Thin Film Solar Cell

Nanocrystal N-Zn-Ag/TiO₂ powders were prepared with N-Zn/TiO₂ by photo deposition method. A series of pure polymers P3HT[poly(3-hexylthiophene)], P3OT[poly(3-octylthiophene)], P3DT[poly(3-decylthiophene)] and P3DDT[poly(3-dodecylthiophene)], was synthesized, which were used to synthesize p-n type semiconductor materials P3HT/N-Zn-Ag-TiO₂, P3OT/N-Zn-Ag-TiO₂, P3DT/N-Zn-Ag-TiO₂ and P3DDT/N-Zn-Ag-TiO₂ by in situ che-mical method. X-Ray diffraction(XRD) and infrared(IR) spectroscopy showed the structure of the polymers and complexes. Ultraviolet-visible(UV-Vis) spectra and cyclic voltammograms(CV) showed the optical and electronic performance of the polymers and complexes. Two new single and double organic thin film heterojunction solar cells were prepared with the above mentioned synthesized powders as raw materials. Current-voltage(I-V) measurements indicate that the conversion efficiency of the single organic thin film heterojunction solar cell is higher than that of the double organic thin film heterojunction solar cells. Single organic thin film heterojunction solar cells based on P3DT/N-Zn-Ag-TiO₂ can get a photoelectric conversion efficiency of 0.0408%. The performance of electronic transform between electron donor and acceptor on organic thin film solar cells was researched.     

Electrochemical study and flow-injection amperometric detection of trace NO(2)(-) at CuPtCl(6) chemically modified electrode

A thin film of mixed-valent CuPtCl₆ is deposited on a glassy carbon electrode by continuous cyclic scanning in a solution containing 3×10⁻³ M CuCl₂+3×10⁻³ M K₂PtCl₆+1 M KCl in the potential range from 700 to −800 mV. The cyclic voltammetry is used to study the electrochemical behaviors of nitrite on CuPtCl₆/GC modified electrode and the electrode displays a good catalytic activity toward the oxidation of nitrite. The effects of the film thickness, pH, the electrode stability and precision have been evaluated. Experiments in flow-injection analysis are performed to characterize the electrode as an amperometric sensor for the detection of nitrite. The modified electrode shows a wide dynamic range, quite a low detection limit and short response time. The linear relationship between the flow-injection peak currents and the concentrations of nitrite is at a range of 1×10⁻⁷–2×10⁻³ M with a detection limit of 5×10⁻⁸ M.     

钾掺杂g-C3N4薄膜光阳极的制备及光电催化氧化降解水中双氯芬酸钠性能

兼具高光学质量和电化学性能的薄膜光电极难以制备, 限制了光电催化氧化技术在水处理中的的应用. 本文采用原位煅烧法制备了负载在氧化铟锡(ITO)玻璃上的石墨相氮化碳(g-C₃N₄)薄膜电极, 并通过掺杂K⁺提高其光电催化氧化性能; 对电极进行了表征, 研究了其光电催化氧化降解水中双氯芬酸钠(DCF)的效率及降解路径. 结果表明, 原位煅烧法能制备出高质量的K⁺/g-C₃N₄薄膜光电极, K⁺的掺杂并未明显改变电极上g-C₃N₄的晶型、 价态和多孔形貌, 但可以提高ITO玻璃上g-C₃N₄的负载量, 增强电极对可见光的响应; K⁺的最佳掺杂浓度为0.002 mol/L, K⁺/g-C₃N₄薄膜电极光电催化氧化降解DCF的速率常数是纯g-C₃N₄薄膜电极的1.86倍; 当初始pH值为4, 电压为1 V, 光源强度为0.96 W/cm², 反应2 h后水中DCF降解率达到70%. K⁺/g-C₃N₄薄膜电极光电催化氧化过程中, 光催化氧化和电化学氧化之间存在协同作用, 两者相互增强, 并提高了反应过程中光生 空穴(h⁺)和羟基自由基(·OH)浓度, 在这两种活性物质作用下, 水中DCF分别被h⁺氧化生成咔唑衍生物、 与·OH发生加成反应生成多羟基芳香化合物, 最后开环生成小分子物质.     

A conjugated polyazine containing diketopyrrolopyrrole for ambipolar organic thin film transistors

A π-conjugated polyazine containing diketopyrrolopyrrole (DPP) moiety, PDBTAZ, is synthesized through a simple condensation polymerization. PDBTAZ is found to be a high-performance ambipolar semiconductor in organic thin film transistors (OTFTs), showing an electron mobility of up to 0.41 cm(2) V(-1) s(-1) and a hole mobility of up to 0.36 cm(2) V(-1) s(-1).     

碲化锗场效应晶体管的制备及电学性能

采用微机械剥离法得到横向尺寸为10μm的碲化锗(GeTe)纳米片.通过电子束曝光和真空溅射镀膜的方法,以钛金合金为接触电极,制备基于二维碲化锗(2D-GeTe)纳米材料的场效应晶体管(FET),并测定了其电学性能.结果表明,剥离所得GeTe纳米材料具有良好的结晶性,光学带隙为1.98 eV,属于p型半导体;该场效应晶体管展现出了6.4 cm2·V-1·s-1的载流子迁移率和670的开关电流比的良好电学性能.