Ground-state properties of the Falicov-Kimball model in one and two dimensions

A new numerical method is used to study the ground-state properties of the spinless Falicov-Kimball model in one and two dimensions. The resultant solutions are used to examine the phase diagram of the model as well as possibilities for valence and metal-insulator transitions. In one dimension a comprehensive phase diagram of the model is presented. On the base of this phase diagram, the complete picture of valence and metal-insulator transitions is discussed. In two dimensions the structure of ground-state configurations is described for intermediate interactions between f and d electrons. In this region the phase separation and metal-insulator transitions are found at low f-electron concentrations. It is shown that valence transitions exhibit a staircase structure. Received 20 October 2000     

Metal-insulator transition in two- and three-dimensional logarithmic plasmas

We consider the scaling of the mean square dipole moment in a plasma with logarithmic interactions in a two- and three-dimensional systems. In both cases, we establish the existence of a low-temperature regime where the mean square dipole moment does not scale with system size and a high-temperature regime where it does scale with system size. Thus, there is a nonanalytic change in the polarizability of the system as a function of temperature and hence a metal-insulator transition in both cases. The relevance of this transition in three dimensions to quantum phase transitions in (2+1)-dimensional systems is briefly discussed.     

Insulator-metal phase diagram of the optimally doped manganites from the disordered Holstein-double exchange model

We study the Holstein-double exchange model in three dimensions in the presence of substitutional disorder. Using a new Monte Carlo technique we establish the phase diagram of the clean model and then focus on the effect of varying electron-phonon coupling and disorder at fixed electron density. We demonstrate how extrinsic disorder controls the interplay of lattice polaron effects and spin fluctuations and leads to widely varying regimes in transport. Our results on the disorder dependence of the ferromagnetic T(C) and metal-insulator transitions bear direct comparison to data on the "optimally doped," x = 0.3-0.4, manganites. We highlight disorder induced polaron formation as a key effect in these materials, organize a wide variety of data into a simple "global phase diagram," and make several experimental predictions.     

External control of a metal-insulator transition in GaMnAs wires

Quantum transport in disordered ferromagnetic (III,Mn)V semiconductors is studied theoretically. Mesoscopic wires exhibit an Anderson disorder-induced metal-insulator transition that can be controlled by a weak external magnetic field. This metal-insulator transition should also occur in other materials with large anisotropic magnetoresistance effects. The transition can be useful for studies of zero-temperature quantum critical phase transitions and fundamental material properties.     

Non-Hermitian quasicrystal in dimerized lattices

Non-Hermitian quasicrystals possess PT and metal–insulator transitions induced by gain and loss or nonreciprocal effects. In this work, we uncover the nature of localization transitions in a generalized Aubry–André–Harper model with dimerized hopping amplitudes and complex onsite potential. By investigating the spectrum, adjacent gap ratios and inverse participation ratios, we find an extended phase, a localized phase and a mobility edge phase, which are originated from the interplay between hopping dimerizations and non-Hermitian onsite potential. The lower and upper bounds of the mobility edge are further characterized by a pair of topological winding numbers, which undergo quantized jumps at the boundaries between different phases. Our discoveries thus unveil the richness of topological and transport phenomena in dimerized non-Hermitian quasicrystals.     

Quantum Hall effects in layered disordered superconductors

Layered singlet paired superconductors with disorder and broken time reversal symmetry are studied, demonstrating a phase diagram with charge-spin separation in transport. In terms of the average intergrain transmission and the interlayer tunneling we find quantum Hall phases with spin Hall coefficients of sigma(spin)(xy)=0,2 separated by a spin metal phase. We identify a spin metal-insulator localization exponent as well as a spin conductivity exponent of approximately 0.96. In the presence of a Zeeman term an additional sigma(spin)(xy)=1 phase appears.     

Correlated Electron Materials and Field Effect Transistors for Logic: A Review

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-T _c superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction, and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.     

量子相变和量子临界现象

本文综述凝聚态物理学中的量子相变和量子临界现象,首先考察了相变中存在量子效应的可能性,通过横磁场Ising模型介绍了量子相变的基本特征;接下来对照热临界现象,引入了量子标度和量子重正化的基本概念和操作方式;然后利用量子临界现象的方案,分析了密度驱动、无序驱动和关联驱动的金属-绝缘体相变;继续利用量子临界性的概念探讨如重电子化合物、铜氧化物和巡游铁磁体这类复杂的相互作用多粒子系统;最后选择量子点、碳纳米管和单层石墨为例,介绍了量子临界性在低维和纳米系统研究中的作用.     

Effects of disorder on ferromagnetism in diluted magnetic semiconductors

We present results of a numerical mean-field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Within our mean-field approximation, disorder enhances the ferromagnetic transition temperature for metallic densities not too far from the metal-insulator transition. Concurrently, the ferromagnetic phase is found to have very unusual temperature dependence of the magnetization as well as specific heat as a result of disorder. Unusual spin and charge transport is implied.     

Competition between phase separation and "Classical" intermediate valence in an exactly solved model

The exact solution of the spin-1 / 2 Falicov-Kimball model on an infinite-coordination Bethe lattice is analyzed in the regime of "classical" intermediate valence. We find that (i) either phase separation or a direct metal-insulator transition precludes intermediate valence over a large portion of the phase diagram, and (ii) within the intermediate valence phase, only continuous transitions are found as functions of the localized f-electron energy or temperature.     

Transport and localisation in the presence of strong structural and spin disorder

We study a tight binding model including both on site disorder and coupling of the electrons to randomly oriented magnetic moments. The transport properties are calculated via the Kubo-Greenwood scheme, using the exact eigenstates of the disordered system and large system size extrapolation of the low frequency optical conductivity. We first benchmark our method in the model with only structural disorder and then use it to map out the transport regimes and metal-insulator transitions in problems involving (i) scattering from random magnetic moments, and (ii) the combined effect of structural disorder and magnetic scattering. We completely map out the dependence of the d.c conductivity on electron density (n) the structural disorder (Δ) and the magnetic coupling (J’), and locate the insulator-metal phase boundary in the space of n-Δ-J’. These results serve as a reference for understanding transport in systems ranging from magnetic semiconductors to double exchange ‘colossal magnetoresistance’ systems. A brief version of this study appears in our earlier paper Europhys. Lett. 65, 75 (2004).     

Manipulating metal-insulator transitions of VO2 films via embedding Ag nanonet arrays

Manipulating metal-insulator transitions in strongly correlated materials is of great importance in condensed matter physics, with implications for both fundamental science and technology. Vanadium dioxide (VO₂), as an ideal model system, is metallic at high temperatures and shown a typical metal-insulator structural phase transition at 341 K from rutile structure to monoclinic structure. This behavior has been absorbed tons of attention for years. However, how to control this phase transition is still challenging and little studied. Here we demonstrated that to control the Ag nanonet arrays (NAs) in monoclinic VO₂(M) could be effective to adjust this metal-insulator transition. With the increase of Ag NAs volume fraction by reducing the template spheres size, the transition temperature (T_c) decreased from 68° to 51°. The mechanism of T_c decrease was revealed as:the carrier density increases through the increase of Ag NAs volume fraction, and more free electrons injected into the VO₂ films induced greater absorption energy at the internal nanometal-semiconductor junction. These results supply a new strategy to control the metal-insulator transitions in VO₂, which must be instructive for the other strongly correlated materials and important for applications.     

Probing the metal-insulator phase transition in the (DMEDO-EBDT)2PF6 single crystal by optical measurements

The temperature and polarization dependence of the optical reflectivity spectra of a quasi-one-dimensional 1/4-filled band system, (DMEDO-EBDT)(2)PF(6), have been investigated. We observed clear anisotropy in the electronic structures corresponding to the anisotropic transport properties. The appearance of a charge gap (E(g)?>?0.1?eV) and transfer of the spectral weight accompanied by the metal-insulator phase transition were clearly observed. In addition, a split of the intramolecular vibrational modes was observed, which strongly suggested the existence of charge disproportionation in the low temperature phase. We also observed a photoinduced reflectivity change, which implied the occurrence of a photoinduced phase transition from the low temperature insulating phase to the high temperature metallic phase.     

Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions

Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.     

Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots

In strongly correlated electronic systems, the global transport behavior depends sensitively on spin ordering. We show that spin ordering in manganites can be controlled by depositing isolated ferromagnetic nanodots at the surface. The exchange field at the interface is tunable with nanodot density and makes it possible to overcome dimensionality and strain effects in frustrated systems to greatly increasing the metal-insulator transition and magnetoresistance. These findings indicate that electronic phase separation can be controlled by the presence of magnetic nanodots.     

Helical-edge transport near ν = 0 of monolayer graphene

The complex nature of filling factor ν = 0 of monolayer graphene is studied in magnetotransport experiments. As a function of perpendicular magnetic field a metal-insulator transition is observed, which is attributed to disorder-induced Landau level broadening in the canted antiferromagnetic phase. In the metallic regime a separation of the zeroth Landau level appears and signs of the quantum spin Hall effect are seen near ν = 0. In addition to local transport, nonlocal transport experiments show results being consistent with helical edge transport.     

Transport properties of granular metals at low temperatures

We investigate transport in a granular metallic system at large tunneling conductance between the grains, g(T)>1. We show that at low temperatures, Tg(T)delta) behavior where conductivity is controlled by the scales of the order of the grain size. In three dimensions we predict the metal-insulator transition at the bare tunneling conductance g(C)(T)=(1/6pi)ln((E(C)/delta), where E(C) is the charging energy of a single grain. Corrections to the density of states of granular metals due to the electron-electron interaction are calculated. Our results compare favorably with the logarithmic dependence of resistivity in the high-T(c) cuprate superconductors indicating that these materials may have a granular structure.     

Phase transformations in perovskites TbBaCo2−x FexO5 + γ

The transport, magnetic, and elastic properties of TbBaCo_2?x Fe_xO_{5 + γ} are investigated. It is shown that these compounds exhibit first-order metal-insulator and antiferromagnet-weak ferromagnet transitions in the orthorhombic phase (x < 0.12), while these transitions are not observed in the tetragonal phase (x > 0.12). In the concentration range corresponding to the orthorhombic phase, doping with iron stabilizes the weakly ferromagnetic phase. However, the tetragonal phase is antiferromagnetic. Oxygen vacancies are assumed to be ordered in the orthorhombic case and disordered in the tetragonal phase. An analysis of Young’s modulus, magnetostriction, and effects of pressure and substitution of the O¹⁸ oxygen isotopes for O¹⁶ indicates a weak correlation between magnetic transformations and the crystal lattice.     

Electronic phase transitions in the spinless falicov-kimball model with correlated hopping

The extrapolation of small-cluster exact-diagonalization calculations is used to examine the influence of correlated hopping on valence and metal-insulator transitions in the one-dimensional Falicov-Kimball model. It is shown that in the half-filled band case the ground-state phase diagram as well as the picture of valence and metal-insulator transitions found for the conventional Falicov-Kimball model (without correlated hopping) are strongly changed when the correlated hopping term is added. The effect of correlated hopping is so strong that it can induce the insulator-metal transition. Outside half-filling correlated hopping stabilizes the segregated phase in the ground-state, however, the nature of the ground-state remains qualitatively unchanged.