H吸附诱发ZnO(10■0)表面的金属化

采用基于广义梯度近似的投影缀加平面波赝势和周期性边界条件的超晶胞模型,用第一原理方法计算并分析了H在ZnO(10■0)面上的吸附能、态密度和能带结构.结果表明:1)H单原子吸附时,H在ZnO(10■0)面上的吸附(用ZnO(10■0)-H表示)只形成OH原子团,没有ZnH出现;面上剩余的Zn悬挂键导致此面显示出很强的金属性.DOS和能带分析显示导带(CB)底的Zn4s态得到电子,向下移动导致价带导带在禁带中出现交叠,呈现明显金属化.2)双H在ZnO(10■0)面上的吸附用ZnO(10■0)-2H表示,在ZnO(10■0)-2H吸附面上,2H分别吸附在O、Zn上,饱和了面上的两个悬挂键,DOS和能带分析显示ZnO(10■0)-2H吸附面与清洁ZnO(10■0)面大致相同,均为绝缘面.     

Li掺杂ZnO的电子结构与电性能的研究

采用密度泛函理论平面波超软赝势方法研究了p型Li掺杂的纤锌矿结构ZnO的能带结构、态密度和电荷分布,并分析了Li掺杂ZnO的电输运性能.结果表明,Li掺杂ZnO具有1.6eV的直接带隙,且为p型半导体,体系费米能级附近的态密度大大提高,在导带和价带中都出现了由Li电子能级形成的能带,其费米能级附近的能带主要由Li的s态、Zn的p态、Zn的d态和O的p态电子构成,且他们之间存在着强相互作用.电输运参数和电输运性能分析结果表明,Li掺杂的ZnO氧化物价带和导带中的载流子有效质量均较大;其载流子输运主要由Li的s态、Zn的p态和O的p态电子完成;Li掺杂有望改善ZnO的电输运性能.     

α-Al2O3(0001)表面吸附ZnO的DFT研究

建立了α-Al2O3(0001)2×1表面薄片吸附模型,采用基于DFT动力学赝势方法,对ZnO分子的吸附生长进行了计算.详细地研究了ZnO分子在表面吸附的成键方式以及表面化学键特性.在较稳定的吸附位上,ZnO化学键[(0.185±0.01)nm]与最近邻的表面Al—O键有30°的偏转角度,Zn在表面较稳定的化学吸附位置偏离表面O六角对称约30°.通过吸附能量、原子布居数和态密度的分析,ZnO的O2-与表面上的Al3+形成的化学键表现出强离子键特征;而Zn2+同基片表面O2-形成的化学键有明显的共价键成分.     

H2在WO3表面解离吸附反应的第一性原理研究

采用第一性原理方法对H2在WO3表面的解离吸附反应进行了研究.首先通过清洁表面模型的计算,证明了c(2×2)重构表面是最稳定的WO3(001)表面构型;进而研究了4种可能的H2解离吸附模型,结果表明最可能的吸附反应为两个氢原子吸附在表面O1c原子上,氢原子被氧化在表面形成水,同时伴随着产生一个表面氧空位.态密度结果表明氢的吸附导致体系能带下移,导带部分填充电子,从而阐明了实验中WO3吸附H2后电导率上升的微观机理.     

H2S在立方ZrO2(110)面的吸附与解离

采用量子化学的密度泛甬理论方法,探讨了H2S、HS和S在立方ZrO2(110)面上不同吸附位的吸附情况.构型优化的结果表明:在bridge位H2S以垂直底物平面H原子向上、垂直底物平面H原子向下、平行底物平面和hollow位H2S平行底物平面模式吸附在ZrO2(110)面发生解离吸附.SH和S的最佳吸附位分别为桥位和顶位.Mulliken布局和态密度分析显示S原子的p轨道与Zr原子的d轨道发生相互作用.通过计算解离反应的能垒,表明H2S分子在立方ZrO2(110)面发生两步解离.     

Pd掺杂对ZnO(1120)面上水解离的影响

采用密度泛函理论计算研究了清洁的以及Pd掺杂的ZnO(1120)面上水分子的吸附和解离.结果表明,在清洁ZnO(1120)上,水分子倾向于分子吸附,解离吸附较为困难.在Pd掺杂的ZnO上,水分子仍倾向吸附在Zn原子上,且吸附能与其在清洁ZnO表面的相当.然而,Pd的掺杂可增强水解离产物OH和H的吸附,从而显著提高了水的解离活性,相应的水解离能垒为0.36eV,放热0.21eV.     

利用原位APXPS与STM研究H2在ZnO(10${\rm{\bar 1}}$0)表面的活化

Cu/ZnO/Al₂O₃是工业中最广泛使用的甲醇合成催化剂。然而该催化反应的活性位点和机理目前仍存争议。H₂作为反应物之一,研究其在ZnO表面的活化和解离对于弄清甲醇合成反应的催化机理具有重要的帮助。本工作利用近常压光电子能谱(APXPS)和扫描隧道显微镜(STM)原位研究了H₂在ZnO(10${\rm{\bar 1}}$0)表面上的活化和解离。APXPS结果表明：在0.3 mbar (1 mbar = 100 Pa)的H₂气氛中,室温下ZnO表面形成羟基(OH)吸附物种。STM实验发现通入H₂后ZnO表面发生了(1×1)到(2×1)的重构。上述结果和原子H在ZnO(10${\rm{\bar 1}}$0)表面的吸附结果一致。然而吸附H₂O可以导致同样的现象。因此,我们还开展了H₂O在ZnO(10${\rm{\bar 1}}$0)表面吸附的对比实验。结果表明：H₂气氛中ZnO表面发生0.3 eV的能带弯曲,而H₂O吸附实验中几乎观察不到能带弯曲发生。同时,热稳定性实验表明H₂气氛中ZnO表面的OH不同于H₂O解离吸附产生的OH,前者具有更高的脱附温度。因此,本工作的结果表明常温和常压下H₂在ZnO(10${\rm{\bar 1}}$0)表面发生解离吸附。这一结果和以往超高真空下未发现H₂在ZnO(10${\rm{\bar 1}}$0)表面上的解离不同,说明H₂的活化是一个压力依赖过程。     

H_2在δ-Pu(100)表面吸附的第一原理研究

采用密度泛函理论结合平板周期性模型研究了H2在δ-Pu(100)表面的吸附行为.结果表明,H2在该表面最稳定的吸附方式为洞位垂直吸附,吸附能为0.183eV,距离表面最近的H原子与表面垂直距离为0.378nm.吸附的H2分子的键长增加、H—H键伸缩振动频率的红移都不明显.只有极少量电子从第1层的Pu原子流向H2分子,吸附引起的表面功函增加也不明显.这说明δ-Pu(100)面分子态H2的吸附属于较弱的物理吸附.讨论了离解吸附的热力学可能性,H2分子的吸附趋向于离解成2个原子态H的吸附,离解后的H原子优先吸附于洞位,此时吸附为较强的化学吸附.     

Co掺杂ZnO纳米棒的水热法制备及其光致发光性能

以Zn(NO3)2·6H2O 和Co(NO3)2·6H2O为原料, 通过水热法在较低温度下制备了纯ZnO和Co掺杂的ZnO(ZnO:Co)纳米棒. 利用XRD、EDS、TEM和HRTEM对样品进行了表征, 结合光致发光(PL)谱研究了样品的PL性能. 结果表明, 水热法制备纯ZnO和ZnO:Co纳米棒均具有较好的结晶度. Co2+是以替代的形式进入ZnO晶格, 掺入量为2%(原子分数)左右. 纯的ZnO纳米棒平均直径约为20 nm, 平均长度约为180 nm; 掺杂样品的平均直径值约为15 nm, 平均长度约为200 nm左右; Co掺杂轻微地影响ZnO纳米棒的生长. 另外, Co掺杂能够调整ZnO纳米棒的能带结构、提高表面态含量, 进而使得ZnO:Co纳米棒的紫外发光峰位红移, 可见光发光能力增强.     

用密度泛函和XANES计算研究Zn2+在水锰矿表面的吸附和沉淀

用密度泛函理论(density function theory, DFT)和X射线近边结构(X-ray absorption near edge structure, XANES)模拟计算了不同酸度(pH = 7.0, 7.5 和 8.0)下Zn(II)在水锰矿表面的吸附. 优化的几何结构表明, 只有双边吸附方式的水解簇既能解释H+ 释放机制, 又能与扩展X射线吸收精细结构(extended X-ray absorption fine structure, EXAFS)实验键长值相吻合. 吸附能计算表明, 各种吸附方式的稳定性双边(DE)>双角(DC)>B型单边(SE-B)>A型单边(SE-A)；水解能计算表明各种吸附态Zn2+ 均比溶液中水合锌离子易水解. 各种吸附簇模型的XANES计算谱未能与实验谱吻合, 即, 表面发生的并不是简单的吸附. pH=7.5和pH=8.0吸附样品的XANES实验谱与Zn5(OH)6(CO3)2的实验谱非常接近, 因此认为pH=7.5和pH=8.0下Zn(II)在水锰矿表面发生沉淀, Zn(II)是Zn—O八面体和Zn—O四面体的混合, 它们按类似Zn5(OH)6(CO3)2结构中的八面体和四面体排列方式排列. pH=7.0时, Zn(II)在水锰矿表面发生的主要是边连接方式的吸附.     

基于密度泛函理论计算的CO2在SrTiO3(100)表面的吸附

通过密度泛函理论的第一性原理,模拟了CO2分子在SrTiO3(100)表面TiO2-和SrO-位点上的吸附行为,获得了CO2在几种不同吸附模型下的结构参数及表面吸附能,进而研究了吸附机理和结构稳定性.计算结果表明,当CO2的C原子吸附在SrTiO3(100)表面SrO-及TiO2-位点的氧原子上时,吸附结构较稳定,尤其是C、O原子共吸附在TiO2-位点时最稳定,而其余吸附模型则不稳定.对吸附稳定模型的Mulliken布局数及态密度分析显示:CO2分子在SrTiO3(100)表面吸附主要是由于SrTiO3(100)面的电子跃迁至CO2分子,CO2分子得到电子形成弯曲的CO2-阴离子结构,并伴随着C-O键的伸长,从而达到吸附活化CO2的目的.     

EXAFS studies on adsorption-desorption reversibility at manganese oxides-water interfaces. I. Irreversible adsorption of zinc onto manganite (gamma-MnOOH)

Microscopic structures of Zn(II) surface complexes adsorbed at the manganite (gamma-MnOOH)-water interface were studied using extended X-ray absorption fine structure (EXAFS) spectroscopy. Quantitative analysis of the first sphere showed that, in a 0.1 M NaNO(3) solution of pH 7.5, Zn(II) was adsorbed as a mixture of tetrahedral and octahedral structure (ZnO(4,6) polyhedra) and the average Zn-O distance was 2.00+/-0.01 A. EXAFS analysis of the second sphere showed that two typical atomic Zn-Mn distances of 3.07+/-0.01 and 3.52+/-0.02 A existed in the surface complexes, indicating that there were two types of linkage, i.e., the edge-linkage of high affinity and the corner-linkage of low affinity, between the ZnO(4,6) polyhedra and the MnO(6) octahedra of the manganite. Macroscopic adsorption-desorption experiments showed that adsorption of Zn(II) onto manganite was largely irreversible and the stronger edge-linkage mode was found to be responsible for the adsorption irreversibility. This result provided direct evidence from the molecular level for the basic hypothesis of the metastable-equilibrium adsorption (MEA) theory that adsorption density is not a thermodynamic state variable because a given value of adsorption density could have different values of chemical potential, depending on the proportion between the edge and corner linkage modes.     

Ag在MgF2(010)表面吸附的密度泛函理论研究

基于密度泛函理论(DFT)的第一性原理赝势法, 对MgF2(010)面及吸附Ag的构型进行了优化, 并计算了MgF2(010)面吸附Ag体系的吸附能、 电子结构和光学性能. 结果表明, MgF2(010)面能隙低于体相, 态密度分裂, 出现表面态. Ag在MgF2(010)面的吸附属于稳定的化学吸附, 最佳吸附位为最外层F的四重穴位. 吸附机理主要表现为Ag的4p轨道与第二层的Mg的2p和3s轨道之间发生相互作用, 有少量电荷从Ag向Mg迁移. 吸附Ag后, 可见光波段的光吸收增加, Ag吸附后将使体系在可见光波段出现吸收峰.     

Zn adsorption on Pd(111): ZnO and PdZn alloy formation

The adsorption and thermal desorption of Zn and ZnO on Pd(111) was studied in the temperature range between 300 and 1300 K with TDS, LEED, and CO adsorption measurements. At temperatures below 400 K, multilayer growth of Zn metal on the Pd(111) surface takes place. At a coverage of 0.75 ML of Zn, a p(2 x 2)-3Zn LEED structure is observed. Increasing the coverage to 3 ML results in a (1 x 1) LEED pattern arising from an ordered Zn multilayer on Pd(111). Thermal desorption of the Zn multilayer state leads to two distinct Zn desorption peaks: a low-temperature desorption peak (400-650 K) arising from upper Zn layers and a second peak (800-1300 K) originating from the residual 1 ML Zn overlayer, which is more strongly bound to the Pd(111) surface and blocks CO adsorption completely. Above 650 K, this Zn adlayer diffuses into the subsurface region and the surface is depleted in Zn, as can be deduced from an increased amount of CO adsorption sites. Deposition of >3 ML of Zn at 750 K leads to the formation of a well-ordered Pd-Zn alloy exhibiting a (6 x 4 square root 3/3)rect. LEED structure. CO adsorption measurements on this surface alloy indicate a high Pd surface concentration and a strong reduction of the CO adsorption energy. Deposition of Zn at T > 373 K in 10(-6) mbar of O2 leads to the formation of an epitaxial (6 x 6) ZnO overlayer on Pd(111). Dissociative desorption of ZnO from this overlayer occurs quantitatively both with respect to Zn and O2 above 750 K, providing a reliable calibration for both ZnO, Zn, and oxygen coverage.     

Unidirectional Pt silicide nanowires grown on vicinal Si(100)

We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.     

High-pressure CO adsorption on Cu-based catalysts: Zn-induced formation of strongly bound CO monitored by ATR-IR spectroscopy

CO adsorption at 1 MPa on Cu-Zn stearate colloids and supported Cu catalysts was studied in situ by attenuated total reflection infrared (ATR-IR) spectroscopy. Subsequent to thorough reduction by H(2), the IR band at 2110-2070 cm(-1) due to linearly adsorbed CO on clean metallic Cu was always observed initially on all Cu catalysts. During the exposure of Zn-containing samples to CO at high pressure, a new IR band at ca. 1975 cm(-1) appeared in addition and increased in intensity even at room temperature. The detailed analysis of the IR spectra showed that the new IR band at ca. 1975 cm(-1) was not related to coadsorbed carbonate/formate-like species, but to the content of Zn in the samples. This IR band was found to be more stable than that at 2110-2070 cm(-1) during purging with inert gas. It disappeared quickly in synthetic air, pointing to a strongly reduced state of the Zn-containing Cu catalysts achieved during high-pressure CO exposure. It is suggested that CO can reduce ZnO to Zn in the presence of Cu, resulting in the formation of a CuZn(x) surface alloy. As the CO species with the characteristic IR band at ca. 1975 cm(-1) binds more strongly to this CuZn(x) alloy than the linearly adsorbed CO to pure Cu, it is suggested to be adsorbed on a bridge site.     

Ab initio cluster calculations on the electronic structure of oxygen vacancies at the polar ZnO(0001) surface and on the adsorption of H2, CO, and CO2 at these sites

Oxygen vacancies at the polar O terminated (0001) surface of ZnO are of particular interest, because they are discussed as active sites in the methanol synthesis. In general, the polar ZnO surfaces are stabilized by OH groups, therefore O vacancies can be generated by removing either O atoms or OH or H2O groups from the surface. These defects differ in the number of electrons in the vacancy and the number of OH groups in the neighborhood. In the present study, the electronic structure and the adsorption properties of four different types of oxygen vacancies have been investigated by means of embedded cluster calculations. We performed ab initio calculations on F+ like surface excitations for the different defect types and found that the transition energies are above the optical band-gap, while F+ centers in bulk ZnO show a characteristic optical excitation at 3.19 eV. Furthermore, we studied the adsorption of CO2 and CO at the different defect sites by DFT calculations. We found that CO2 dissociates at electron rich vacancies into CO and an O atom which remains in the vacancy. At the OH vacancy which contains an unpaired electron CO2 adsorbed in the form of CO2-, while it adsorbed as a linear neutral molecule at the H2O defect. CO adsorbed preferentially at the H2O defect and the OH defect, both with a binding energy of 0.3 eV.     

Electronic structure and hydrogen bond in the crystal of paracetamol drugs

We study the density of state (DOS), band structure (BS), and atomic orbit projected density of state (PDOS) of paracetamol crystal adopting the density functional theory (DFT) technique in the local density approximation (LDA). The band structure around the Fermi level and the contributions from p-type orbit of C, N, O, and s-type orbit of H to the total density of state (TDOS) are addressed, and we find that the electronic characteristic is the key to form the hydrogen bond between O and H atoms. We show that the structure of paracetamol crystal consists of the –OH···O=C and –NH···OH hydrogen-bonding cycle by studying a single paracetamol molecule as well as the PDOS graph of O and H atoms in the crystal.     

Gd3+掺杂ZnO的制备及其性能

为提高ZnO的光催化性和稳定性,扩展对光的吸收范围,以乙二胺四乙酸(H₄EDTA)为配体形成配位前驱体,通过低温热分解配位前驱体法制备了Gd³⁺掺杂ZnO复合物Zn_1-xGd_xO₂(x=0~0.1)纳米颗粒。 采用X射线粉末衍射(XRD)、红外光谱法(FT-IR)、扫描电子显微镜(SEM)、荧光光谱法(FL)、紫外可见漫反射光谱法(UV-Vis DRS)、交流阻抗(EIS)以及动态光电流响应(i-t)等多种手段研究掺杂比例对氧化锌物相、表面形貌、光学性以及光电响应性等的影响。 结果表明,Gd³⁺掺杂摩尔分数低于3%时,产物为单相纤锌矿ZnO,提高掺杂比例(>3%)不仅使ZnO晶格萎缩,同时还出现少量Gd₂O₃第二相,且晶粒随掺杂摩尔分数的增加而降低。 Gd³⁺掺杂使ZnO能带结构发生改变,其价带、导带和带隙等各值都随着掺杂摩尔分数的增加而降低。 I-t结果表明,适量掺杂可提高ZnO的光电响应能力,其中掺杂摩尔分数1%所得ZnO的光电流密度最大(10 mA/m²)。甲基橙(MO)的光降解结果显示,Gd³⁺掺杂能提高ZnO的催光化性,其中1%掺杂对ZnO的催化性提高最大。 最后还对ZnO的催化选择性和耐酸碱性进行了简单研究。