非晶硅太阳电池宽光谱陷光结构的优化设计

陷光是改善薄膜太阳电池光吸收进而提高其效率的关键技术之一. 以非晶硅（α-Si）薄膜太阳电池为例,设计了一种新的复合陷光结构：在Ag背电极与硅薄膜之间制备一维Ag纳米光栅,并通过保形生长在电池前表面沉积织构的减反膜. 采用有限元数值模拟方法,研究了该复合陷光结构对电池光吸收的影响,并对Ag纳米光栅的结构参数进行了优化. 模拟结果表明：该复合陷光结构可在宽光谱范围内较大地提高太阳电池的光吸收;当Ag纳米光栅的周期P为600 nm,高度H为90 nm,宽度W为180 nm时,在AM1.5光谱垂直入射条件下α-Si薄膜电池在300–800 nm波长范围内总的光吸收较无陷光结构的参考电池提高达103%,其中在650–750 nm长波范围内的光子吸收率提高达300%以上. 结合电场强度分布,对电池在各个波段光吸收提高的物理机制进行了分析. 另外,该复合陷光结构的引入,还较大地改善了非晶硅电池对太阳光入射角度的敏感性. 关键词： 非晶硅太阳电池 陷光 银纳米光栅 数值模拟     

非晶硅薄膜的光膨胀效应

利用“差分电容膨胀计”方法，首次发现氢化非晶硅（ａ－Ｓｉ∶Ｈ）在光照下体积增大．著名的Ｓｔａｅｂｌｅｒ－Ｗｒｏｎｓｋｉ效应（ａ－Ｓｉ∶Ｈ的光致亚稳变化）很可能是这种“光膨胀”的后效应     

一个非晶硅薄膜太阳能电池制备用激光刻线系统

 非晶硅薄膜太阳能电池制备过程中的激光刻线工艺要求刻线宽度在30 μm～50 μm之间,死区范围小于300 μm,刻线深度符合工艺要求。这不仅要求激光器具有较高的光束质量,而且要求光学系统具有较高的成像质量和较宽的焦深。设计了单激光器四分光路的激光刻线系统。采用设计的激光刻线装置,在1 400 mm×1 100 mm×3.2 mm玻璃基板上进行刻线试验,分别得到刻线P1,P2,P3的线宽为35 μm,50 μm和45 μm,死区范围（P1至P3的距离）为287 μm,最终深度分别为0.98 μm,0.24 μm和0.58 μm,刻线宽度和深度均符合薄膜太阳能电池制备工艺要求。     

Matlab在光伏电池实验中的应用

简述光伏电池实验的原理、实验方法及测量结果,并利用计算机和Matlab软件,对传统的实验进行了改进,为实验数据处理与理论分析提供了便利。     

前后光栅周期对于双光栅结构薄膜太阳能电池光俘获效应的影响

本文用时域有限差分法对硅层等效厚度为100 nm的具有不同前后光栅周期的介质/金属双光栅结构薄膜太阳能电池进行了模拟分析,比较了三角形最佳相同与不同周期光栅结构的吸收光谱特性,分析了光栅高度、填充比、硅吸收层厚度对最佳相同和不同周期光栅结构光吸收特性的影响,以及相应结构中导致光吸收增强的共振模式.结果表明前后光栅周期为1:1的共形双光栅结构中存在光泄漏现象,偏离1:1后的光栅结构可有效地抑制低级次衍射光的泄漏,前光栅周期小于后光栅周期的结构光吸收性能的提高来自于平面波导模式在吸收层中的有效激发和传播,而前光栅周期大于后光栅周期的结构光吸收性能的提高则来自于后光栅界面上所激发的等离子体极化模式.在较厚的硅吸收层厚度,前后光栅周期比为1:2和1:3的电池结构也会出现光泄漏现象,从而使具有最大光吸收效率的结构偏离这些周期比结构的位置.     

单室沉积高效非晶硅/微晶硅叠层太阳电池的研究

采用甚高频等离子体增强化学气相沉积技术,在前期单室沉积的微晶硅薄膜太阳电池和非晶硅/微晶硅叠层太阳电池研究的基础上,通过对微晶硅底电池本征层硅烷浓度的优化,获得了初始效率达到11.02%(电池面积1.0 cm²)的非晶硅/微晶硅叠层太阳电池.同时,100 cm²的非晶硅/微晶硅叠层太阳电池的组件效率也达到了9.04%. 关键词： 非晶硅/微晶硅叠层电池 单室 甚高频     

短脉冲光在光伏光折变晶体中写入和擦除光折变光栅理论研究

利用GC Valley的准连续光(Quasi-cw)近似模型,研究了短脉冲激光(纳秒ns量级)在光伏光折变材料LiNbO3晶体中写入和擦除光折变光栅的过程,给出了空间电荷场随时间变化的表达式.理论研究表明,空间电荷场的形成和擦除与两个时间参量有关,在考虑或者不考虑光生伏打效应两种情况下,这两个参量随擦除光强的变化有基本相同的变化规律,光栅的写入和擦除有相同的结果.同样,擦除一个光栅所需的光能量在两种情况下也有相同的结果.因此,在短脉冲光入射光折变晶体材料情况下,考虑光生伏打效应与不考虑光伏效应,对短脉冲光在光折变LiNbO3晶体中写入和擦除光栅基本没有影响.     

光散射与导模共振模型在薄膜太阳能电池结构设计中的应用

利用光散射与导模共振的理论,设计了一种薄膜太阳能电池的陷光结构,对硫属化合物薄膜太阳能电池进行了优化设计,选择多孔氧化铝薄膜(PAA)作为散射层,模型结构层厚度为:窗口层(AZO)320nm,缓冲层(In2S3)65nm,吸收层(SnS)660nm。研究结果表明,光散射与导模共振相结合的薄膜太阳能电池结构能够提高自身的光吸收率,其中由光散射结构提高的全光谱吸收率约为3%。本设计可以优化薄膜太阳能电池的吸收光谱,提高其对近红外波段的光吸收能力,在波长950nm位置的吸收率达到85%,增强了薄膜太阳能电池的光利用率。     

一种增加光吸收的非晶硅薄膜太阳能电池的设计

分别设计与优化了非晶薄膜太阳能电池的上表层和电池底部结构,采用严格耦合波方法(RCWA)数值计算了电池的光吸收。计算结果表明:在仅考虑TM偏振的情况下,优化后的增透膜与无增透膜相比,300～840 nm波长范围内的吸收平均提高了35%左右;优化后的背反射器与无背反射器相比,700～840 nm波长范围内的吸收平均提高了23%左右。该非晶硅薄膜太阳能电池结构在全角宽频范围内有较高吸收,可以提高太阳能电池的转化效率。     

光栅光调制器的表面弯曲度分析及实验

讨论了二维光栅光调制器阵列的表面弯曲度对衍射光学特性的影响.利用实测的表面结构数据建立了阵列模型,利用Matlab软件计算了不同弯曲度对频谱面上衍射光强的分布影响.得到了弯曲度与对比度之间的关系.结果表明暗态时光栅面的弯曲度对成像对比度的影响很大,如果将光栅面的中心弯曲度控制在0.1λ以内,在像面上将获得1000以上的对比度.并通过实验动态显示器件的明暗态调制,得出减少光栅面弯曲度的优化方案.     

Silicon nitride/silicon oxide interlayers for solar cell passivating contacts based on PECVD amorphous silicon

This Letter demonstrates improved passivating contacts for silicon solar cells consisting of doped silicon films together with tunnelling dielectric layers. An improvement is demonstrated by replacing the commonly used silicon oxide interfacial layer with a silicon nitride/silicon oxide double interfacial layer. The paper describes the optimization of such contacts, including doping of a PECVD intrinsic a‐Si:H film by means of a thermal POCl₃ diffusion process and an exploration of the effect of the refractive index of the SiN_x. The n⁺ silicon passivating contact with SiN_x /SiO_x double layer achieves a better result than a single SiN_x or SiO_x layer, giving a recombination current parameter of ～7 fA/cm² and a contact resistivity of ～0.005 Ω cm², respectively. These self‐passivating electron‐selective contacts open the way to high efficiency silicon solar cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Theoretical investigation on the passivation layer with linearly graded bandgap for the amorphous/crystalline silicon heterojunction solar cell

Passivation layer with linearly graded bandgap (LGB) was proposed to improve the performance of amorphous/crystalline silicon heterojunction (SHJ) solar cell by eliminating the large abrupt energy band uncontinuity at the a‐Si:H/c‐Si interface. Theoretical investigation on the a‐Si:H(p)/the LGB passivation layer(i)/c‐Si(n)/a‐Si:H(i)/a‐Si:H(n⁺) solar cell via AFORS‐HET simulation show that such LGB passivation layer could improve the solar cell efficiency (η) by enhancing the fill factor (FF) greatly, especially when the a‐Si:H(p) emitter was not efficiently doped and the passivation layer was relatively thick. But gap defects in the LGB passivation layer could make the improvement discounted due to the open‐circuit voltage (V_OC) decrease induced by recombination. To overcome this, it was quite effective to keep the gap defects away from the middle of the bandgap by widening the minimum bandgap of the LGB passivation layer to be a little larger than that of the c‐Si base. The underlying mechanisms were analysed in detail. How to achieve the LGB passivation layer experimentally was also discussed. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO₂ or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.     

异质结及其技术在新型硅基太阳能电池中的应用

文章综述了异质结及其技术在新型硅基太阳能电池中的应用.从太阳能电池特性角度,点评了其在晶体硅、非晶硅薄膜太阳能电池及新结构太阳能电池应用中的研究热点和研究现状.在此基础上,讨论了其在不断与晶体硅、薄膜硅太阳能电池融合中的发展动态.     

异质结及其技术在新型硅基太阳能电池中的应用

文章综述了异质结及其技术在新型硅基太阳能电池中的应用.从太阳能电池特性角度,点评了其在晶体硅、非晶硅薄膜太阳能电池及新结构太阳能电池应用中的研究热点和研究现状.在此基础上,讨论了其在不断与晶体硅、薄膜硅太阳能电池融合中的发展动态.     

Silicon heterojunction solar cell with amorphous silicon oxide buffer and microcrystalline silicon oxide contact layers

This Letter reports on the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers (doped microcrystalline silicon oxide) on flat p‐type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade‐off between the open circuit voltage V_oc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm²) was achieved with V_oc = 664 mV, short circuit current J_sc = 35.7 mA/cm² and FF = 78.0%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Plasmonic multilayer structure for ultrathin amorphous silicon film photovoltaic cell

A plasmonic multilayer structure (PMS) is proposed for photovoltaic cells with an ultrathin active layer that is 30 nm amorphous Si (α-Si). The optical properties of the PMS are analyzed by rigorous coupled-wave analysis (RCWA) and finite-difference time-domain (FDTD) method. Using the PMS, the incident light can be trapped into localized surface plasmon (LSP) and then the localized surface plasmon induces the surface plasmon (SP) that propagates transversely within the α-Si layer. Compared with the indium tin oxide (ITO)/α-Si/Ag structure, the photon number absorbed by PMS increase 28.7% while a normal incident transverse magnetic (TM) polarization wave is applied.     

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

This letter shows that intrinsic hydrogenated amorphous silicon (a‐Si:H) films deposited by RF magnetron sputtering can provide outstanding passivation of crystalline silicon surfaces, similar to that achieved by plasma enhanced chemical vapour deposition (PECVD). By using a 2% hydrogen and 98% argon gas mixture as the plasma source, 1.5 Ω cm n‐type FZ silicon wafers coated with sputtered a‐Si:H films achieved an effective lifetime of 3.5 ms, comparable to the 3 ms achieved by PECVD (RF and microwave dual‐mode). This is despite the fact that Fourier transform infrared spectroscopy measurements show that sputtering and PECVD deposited films have very different chemical bonding configurations. We have found that film thickness and deposition temperature have a significant impact on the passivation results. Self‐annealing and hydrogen plasma treatment during deposition are likely driving forces for the observed changes in surface passivation. These experimental results open the way for the application of sputtered a‐Si:H to silicon heterojunction solar cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)