Atypical grain growth for (2 1 1) CdTe films deposited on surface reconstructed (1 0 0) SrTiO3 substrates

The (1 0 0) SrTiO₃ substrate has emerged as the oxide substrate of choice for the deposition of a wide variety of materials. The substrate's unavoidable miscut leads to a step-terrace morphology when heated to high temperatures. This morphological transition is accompanied by an atomic scale repositioning of the uppermost terrace atoms, the nature of which is strongly dependent on the substrate temperature and ambient atmosphere used. Here, we report the deposition of CdTe films on the as-received and reconstructed surfaces of (1 0 0) SrTiO₃. The as-received substrate gives rise to a [1 1 1] CdTe film with four equally distributed in-plane grain orientations. The surface reconstruction, on the other hand, gives rise to an unprecedented reorientation of the film's grain structure. For this case, a [2 1 1] CdTe film emerges having twelve unevenly distributed in-plane orientations. We attribute the film's grain structure to an atomic scale surface reconstruction, with the anisotropic distribution of grain-types arising from a preferential formation due to the step edges.     

Long-range surface reconstruction: Si(110)-(16 x 2)

A variety of reconstruction models is studied for the Si(110)-(16 x 2) surface using first-principles calculations. Assuming appropriate rebonding of edge atoms and surface chains buckled in antiphase, we show that steps along the [112] direction yielding a trench indeed lower the surface energy. We explain the long-range surface reconstruction and develop a geometry model based on steps, adatoms, tetramers, and interstitials. The model is able to explain the stripes of paired pentagons seen obviously in empty-state scanning tunneling microscopy images.     

Direct observation of charge transfer at a MgO(111) surface

Transmission electron diffraction (TED) combined with direct methods have been used to study the sqrt[3]xsqrt[3]R30 degrees reconstruction on the polar (111) surface of MgO and refine the valence charge distribution. The surface is nonstoichiometric and is terminated by a single magnesium atom. A charge-compensating electron hole is localized in the next oxygen layer and there is a nominal charge transfer from the oxygen atoms to the top magnesium atom. The partial charges that we obtain for the surface atoms are in reasonable agreement with empirical bond-valence estimations.     

Adatom-vacancy mechanisms for the C6)/Al111-(6 x 6) reconstruction

The irreversible (6x6) reconstruction of the C(60)/Al(111) system from the (2sqrt[3]x2sqrt[3])R30 degrees phase is studied by first-principles techniques. We find that C60 binds optimally to the surface if an Al vacancy is created directly underneath. The removed Al atoms form a (6x6) array of ad-dimers in the interstices below the C60 overlayer, to which they strongly bind. This spontaneous local process, rather than the compression state of the unreconstructed C60 overlayer, explains why one molecule out of three protrudes from the surface upon reconstruction.     

Comment on ‘adsorption of hydrogen on thin fcc-iron films grown on Cu(100) by C. Egawa, E.M. McCash and R.F. Willis’

In a recent Letter Egawa et al. [Surf. Sci. 215 (1989) L271] presented a detailed study of hydrogen adsorption on ultrathin iron films on the Cu(100) surface. They found the surface to reconstruct upon hydrogen adsorption and pointed out the analogy to a reconstruction reported in our previous Letter [Phys. Rev. Lett. 60 (1988) 2741]. In this Letter we present evidence that the cited reconstruction is a genuine feature of the clean iron films and is not caused by hydrogen adsorption.     

Kinetics in surface reconstructions on GaAs(001)

We have successfully controlled the surface structures of GaAs(001) by changing incident As-molecular species. Under As4 fluxes, the c(4 x 4) reconstruction with Ga-As dimers [c(4 x 4)alpha structure] is obtained, but the formation of three As-As dimer structures [c(4 x 4)beta structure] is kinetically limited. On the other hand, the structure change from the (2 x 4), through c(4 x 4)alpha, to c(4 x 4)beta phases is observed under As2 fluxes. We found that the c(4 x 4)alpha structure is energetically metastable and provides a kinetic pathway for the structure change between the (2 x 4) and c(4 x 4)beta phases under As2 fluxes.     

Metallic transport in a monatomic layer of in on a silicon surface

We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10?K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.     

Depth-adaptive regularized reconstruction for reflection diffuse optical tomography

We study reflection diffuse optical tomography using two-dimensional (2D) continuous-wave source-detector arrays on the surface of semi-infinite medium, aiming at imaging the perfusion and the hemoglobin oxygen saturation variation of human cerebral cortex with brain activation. We had previously formulated the inverse problem with Moore-Penrose inversion. When we use simple regularization in this inverse problem, the reconstruction sensitivity decreases markedly with the depth so that the signal in the deep range may be masked by an unwanted signal in the shallow range. In this paper, we propose a depth-adaptive regularized reconstruction, in which we assign a smaller regularization parameter with the depth. We demonstrate improvement of the three-dimensional (3D) reconstruction uniformity using the proposed scheme.     

Metallic nature of the alpha-Sn/Ge(111) surface down to 2.5 K

Low temperature (down to 2.5 K) scanning tunneling microscopy (STM) and spectroscopy (STS) measurements are presented to assess the nature of the alpha-Sn/Ge(111) surface. Bias-dependent STM and STS measurements have been used to demonstrate that such a surface preserves a metallic 3 x 3 reconstruction at very low temperature. A tip-surface interaction mechanism becomes active below about 20 K at the alpha-Sn/Ge(111) surface, resulting in an apparent unbuckled (sqrt[3] x sqrt[3]) reconstruction when filled states STM images are acquired with tunneling currents higher than 0.2 nA.     

Reversible transition between thermodynamically stable phases with low density of oxygen vacancies on the SrTiO3(110) surface

The surface reconstruction of SrTiO3(110) is studied with scanning tunneling microscopy and density functional theory (DFT) calculations. The reversible phase transition between (4×1) and (5×1) is controlled by adjusting the surface metal concentration [Sr] or [Ti]. Resolving the atomic structures of the surface, DFT calculations verify that the phase stability changes upon the chemical potential of Sr or Ti. In particular, the density of oxygen vacancies is low on the thermodynamically stabilized SrTiO3(110) surface.     

The surface structure of the metallic sodium tungsten bronze Na0.667WO3(001)

Scanning tunnelling microscopy has been used to identify a number of surface reconstructions on the (001) surface of the cubic metallic sodium tungsten bronze, Na_0.667WO₃. Which is dominant has been found to depend critically on sample preparation. As well as a reconstruction that bears a striking similarity to that of the parent material, tungsten trioxide, regions of (2×1) periodicity are observed that can only be explained in terms of an Na_yO surface layer. In the current work, we relate the effect of sample preparation on the surface electronic structure of Na_0.667WO₃(001) with that on the atomic structure by comparing photoemission spectra with STM images. Particular interest is focused on band gap defect states in photoemission spectra which, in contrast to similar states in spectra from WO₃, do not appear to correlate with the appearance of localised defects or highly reduced terraces in STM images. The existence of peroxide-like oxygen dimers at the (2×2) reconstructed surface, on the other hand, is characterised by the appearance of identifiable states in the valence band spectrum.     

Electronic structure,Dirac points and Fermi arc surface states in three-dimensional Dirac semimetal Na_3Bi from angle-resolved photoemission spectroscopy

The three-dimensional(3D) Dirac semimetals have linearly dispersive 3D Dirac nodes where the conduction band and valence band are connected. They have isolated 3D Dirac nodes in the whole Brillouin zone and can be viewed as a 3D counterpart of graphene. Recent theoretical calculations and experimental results indicate that the 3D Dirac semimetal state can be realized in a simple stoichiometric compound A_3Bi(A = Na, K, Rb). Here we report comprehensive high-resolution angle-resolved photoemission(ARPES) measurements on the two cleaved surfaces,(001) and(100), of Na_3Bi. On the(001) surface, by comparison with theoretical calculations, we provide a proper assignment of the observed bands, and in particular, pinpoint the band that is responsible for the formation of the three-dimensional Dirac cones. We observe clear evidence of 3D Dirac cones in the three-dimensional momentum space by directly measuring on the k_x–k_y plane and by varying the photon energy to get access to different out-of-plane k_zs. In addition, we reveal new features around the Brillouin zone corners that may be related with surface reconstruction. On the(100) surface, our ARPES measurements over a large momentum space raise an issue on the selection of the basic Brillouin zone in the(100) plane. We directly observe two isolated 3D Dirac nodes on the(100) surface. We observe the signature of the Fermi-arc surface states connecting the two 3D Dirac nodes that extend to a binding energy of ~150 me V before merging into the bulk band. Our observations constitute strong evidence on the existence of the Dirac semimetal state in Na_3Bi that are consistent with previous theoretical and experimental work. In addition, our results provide new information to clarify on the nature of the band that forms the3 D Dirac cones, on the possible formation of surface reconstruction of the(001) surface, and on the issue of basic Brillouin zone selection for the(100) surface.     

Partial intensity approach for quantitative analysis of reflection-electron-energy-loss spectra

We have considered a formalism, known as partial intensity approach (PIA), previously developed to quantitatively analyze reflection electron energy loss (REEL) spectra [1,2]. The aim of the approach is, in particular, to recover the single scattering distribution of energy losses and to separate it into bulk and surface contributions, respectively referred to as the differential inverse inelastic mean free path (DIIMFP) and the differential surface excitation parameter (DSEP). As compared to [1] and [2], we have implemented a modified approach, and we have applied it to the specific geometry of the cylindrical mirror analyzer (CMA), used to acquire the REEL spectra shown here. Silicon, a material with well-defined surface and bulk plasmons, is taken as a case study to investigate the approach as a function of electron energy over the energy range typical of REELS, i.e. from 250 eV to 2 keV. Our goal is, on the one hand, to examine possible limits for the applicability of the approach and, on the other hand, to test a basic assumption of the PIA, namely that a unique DIIMFP and a unique DSEP account for REEL spectra, whatever the acquisition conditions (i.e. electron energy or angle of surface crossing) are. We find that a minimum energy exists below which the PIA cannot be applied and that the assumption of REEL spectra accounted for by unique DIIMFP and DSEP is indeed an approximation.     

Lead growth on Si(111) surfaces reconstructed by indium

We study the Pb growth on both √3 × √3-In and 4 × 1-In reconstructed Si(111) surfaces at room and low temperature (160 K). The study takes place with complementary techniques, to investigate the role of the substrate reconstruction and temperature in determining the growth mode of Pb. Specifically, we focus on the correlation between the growth morphology and the electronic structure of the Pb films. The information is obtained by using Auger electron spectroscopy, low energy electron diffraction, soft x-ray photoelectron spectroscopy, scanning tunneling microscopy and spot profile analysis-low energy electron diffraction. The results show that, at low temperature and coverage ≤12 ML on the Si(111)√3 × √3-In surface, Pb does not alter the initial semiconducting character of the substrate and three-dimensional Pb islands with poor crystallinity are grown on a wetting layer. On the other hand, for the same coverage range, Pb growth on the Si(111)4 × 1-In surface results in metallic Pb(111) crystalline islands after the completion of a double incomplete wetting layer. In addition, the bond arrangement of the adatoms is studied, confirming that In adatoms interact more strongly with the silicon substrate than the Pb ones. This promotes a stronger Pb-Pb interaction and enhances metallization. The onset of the metallization is correlated with the amount of pre-deposited In on the Si(111) surface. The decoupling of the Pb film from the 4 × 1-In interface can also explain the unusual thermal stability of the uniform height islands observed on this interface. The formation of these Pb islands is driven by quantum size effects. Finally, the different results of Pb growth on the two reconstructed surfaces confirm the importance of the interface, and also that the growth morphology, as well as the electronic structure of the Pb film can be tuned with the initial substrate reconstruction.     

Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies

We report photoreflectance-difference and reflectance-difference measurements on reconstructed GaAs (001) surfaces. From these data the linear and quadratic electro-optic coefficient spectra are determined in the important 2.8-3.4 eV spectral region. The surface strain and fields induced by the surface reconstruction are also determined. We show experimentally that between c(4x4) and (2x4) surfaces, there is an inversion of the surface electric field which we attribute to a direct piezo-electric effect related to the surface strain induced by reconstruction.     

Recent advances in 3D SEM surface reconstruction

The scanning electron microscope (SEM), as one of the most commonly used instruments in biology and material sciences, employs electrons instead of light to determine the surface properties of specimens. However, the SEM micrographs still remain 2D images. To effectively measure and visualize the surface attributes, we need to restore the 3D shape model from the SEM images. 3D surface reconstruction is a longstanding topic in microscopy vision as it offers quantitative and visual information for a variety of applications consisting medicine, pharmacology, chemistry, and mechanics. In this paper, we attempt to explain the expanding body of the work in this area, including a discussion of recent techniques and algorithms. With the present work, we also enhance the reliability, accuracy, and speed of 3D SEM surface reconstruction by designing and developing an optimized multi-view framework. We then consider several real-world experiments as well as synthetic data to examine the qualitative and quantitative attributes of our proposed framework. Furthermore, we present a taxonomy of 3D SEM surface reconstruction approaches and address several challenging issues as part of our future work.     

Surface Reconstruction with a Fractional Hole: (sqrt[5] x sqrt[5])R26.6 degrees LaAlO3 (001)

The structure of the (sqrt[5] x sqrt[5])R26.6 degrees reconstruction of LaAlO3 (001) has been determined using transmission electron diffraction combined with direct methods. It has a lanthanum oxide termination with one lanthanum vacancy per surface unit cell. Density functional calculations indicate that charge compensation occurs by a fractional number of highly delocalized holes, and that the surface contains no oxygen vacancies and the holes are not filled with hydrogen. The reconstruction can be understood in terms of expulsion of the more electropositive cation from the surface and increased covalency.     

LaTiO3(110)薄膜分子束外延生长的精确控制和表面截止层的研究

LaTiO₃ 是一种典型的强关联电子材料, 其(110) 薄膜为通过晶格对称性、应变等的设计调控外延结构的物理性质提供了新的机会. 本文研究了SrTiO₃(110) 衬底表面金属La 和Ti 沉积所引起的微观结构变化, 进而利用电子衍射信号对分子束外延薄膜生长表面阳离子浓度的灵敏响应, 发展了原位、实时、精确控制金属蒸发源沉积速率的方法, 实现了高质量LaTiO₃(110) 薄膜的生长和对阳离子化学配比的精确控制. 由于LaTiO₃中Ti³⁺ 3d 电子的库仑排斥作用, 氧原子层截止的(110) 表面更容易实现极性补偿, 因此生长得到的薄膜表面暴露出单一类型的氧截止面.     

Control of unpolarized emission in closely stacked InAs quantum dot structure

In this work, we studied the effect of some growth parameters on the polarization behavior of InAs/GaAs closely stacked quantum dot (CSQDs). In particular, we focused on the surface reconstruction time of GaAs spacer, its thickness and the number of QD layers. We found that the most effective parameter to enhance the TM/TE intensity ratio is the surface reconstruction time of the GaAs spacer before the subsequent QD deposition. By varying this parameter between 20 s and 120 s, a TM/TE ratio as high as 0.86 has been achieved. A further fine tuning of GaAs spacer thickness and QD layer number increased this ratio up to a value of 0.92 in structures containing only 3 QD layers.     

Fermi surface, surface states, and surface reconstruction in Sr2RuO4

The electronic structure of Sr2RuO4 is investigated by high angular resolution ARPES at several incident photon energies. We address the controversial issues of the Fermi surface (FS) topology and the van Hove singularity at the M point, showing that a surface state and the replica of the primary FS due to sqrt[2]xsqrt[2] surface reconstruction are responsible for previous conflicting interpretations. The FS thus determined by ARPES is consistent with the de Haas-van Alphen results, and it provides additional information on the detailed shape of the alpha, beta, and gamma sheets.