High-field Hall resistivity and magnetoresistance of electron-doped Pr2-xCexCuO4-delta

We report resistivity and Hall effect measurements in electron-doped Pr2-xCexCuO4-delta films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising nonlinear magnetic field dependence of Hall resistivity at high field in the optimally doped and overdoped films. We also observe a crossover from quadratic to linear field dependence of the positive magnetoresistance in the overdoped films. A spin density wave induced Fermi surface reconstruction model can be used to qualitatively explain both the Hall effect and magnetoresistance.     

Magnetic penetration depth measurements on high-temperature superconducting thin films and their implications

Il Nuovo Cimento D - Accurate measurements of the magnetic penetration depth λ of n-doped (Nd1.85Ce0.15CuO4−δ) and p-doped (YBa2Cu3O7−δ) high-temperature superconductors...     

Temperature dependence of the penetration depth in Sr2RuO4: evidence for nodes in the gap function

We report measurements of the magnetic penetration depth in single crystals of Sr2RuO4 down to 0.04 K using a tunnel-diode based, self-inductive technique. We observe a power law temperature dependence below 0.8 K, with no sign of a second phase transition nor of a crossover predicted for a multiband superconductor. A power law dependence suggests that the gap function has nodes, inconsistent with candidate p-wave states. We argue that nonlocal effects, rather than impurity scattering, can explain the observed T2 dependence instead of the T-linear behavior expected for line nodes.     

Evidence for a nodeless gap from the superfluid density of optimally doped Pr(1.855)Ce(0.145)CuO(4-y) films

We present measurements of the ab-plane magnetic penetration depth, lambda(T), in five optimally doped Pr(1.855)Ce(0.145)CuO(4-y) films for 1.6 K< or =T < or =T(c) approximately 24 K. Low resistivities, high superfluid densities n(s)(T) proportional, variant lambda(-2)(T), high T(c)'s, and small transition widths are reproducible and indicative of excellent film quality. For all five films, lambda(-2)(T)/lambda(-2)(0) at low T is well fitted by an exponential temperature dependence with a gap, Delta(min), of 0.85k(B)T(c). This behavior is consistent with a nodeless gap and is incompatible with d-wave superconductivity.     

Evidence for a quantum phase transition in Pr2-xCe(x)CuO4-delta from transport measurements

The doping and temperature dependences of the Hall coefficient, R(H), and ab-plane resistivity in the normal state down to 350 mK is reported for oriented films of the electron-doped high-T(c) superconductor Pr(2-x)Ce(x)CuO(4-delta). The doping dependences of beta (rho=rho(0)+ATbeta) and R(H) (at 350 mK) suggest a quantum phase transition at a critical doping near x=0.165.     

Multiple gap symmetries for the order parameter of cuprate superconductors from penetration depth measurements

The temperature dependence of the London penetration depth lambda was measured for an untwinned single crystal of YBa_{2}Cu_{3}O_{7-delta} along the three principal crystallographic directions (a, b, and c). Both in-plane components (lambda_{a};{-2} and lambda_{b};{-2}) show an inflection point in their temperature dependence which is absent in the component along the c direction (lambda_{c};{-2}). The data provide convincing evidence that the in-plane superconducting order parameter is a mixture of (s+d)-wave symmetry whereas it is mainly s wave along the c direction. In conjunction with previous results it is concluded that coupled s+d-order parameters are universal and intrinsic to cuprate superconductors.     

Probing the superconducting gap symmetry of PrOs4Sb12: a penetration depth study

We report measurements of the magnetic penetration depth lambda in single crystals of PrOs4Sb12 down to 0.1 K, with the ac field applied along the a, b, and c directions. In all three field orientations, lambda approximately T2 and superfluid density rho(s) approximately T2 for T<0.3T(c). Data are best fit by the 3He A-phase-like gap with multidomains, each having two point nodes along a cube axis, and parameter Delta(0)(0)/k(B)T(c)=2.6, suggesting that PrOs4Sb12 is a strong-coupling superconductor with two point nodes on the Fermi surface. We also confirm the double transitions at 1.75 and 1.85 K seen in other measurements.     

Isotropically gapped strong-coupling superconductivity in the beta-pyrochlore KOs2O6: evidence from penetration depth measurements

We report on measurements of the temperature dependence of the magnetic penetration depth down to 0.04 K in a high-quality sample of the beta-pyrochlore KOs2O6 (Tc=9.65 K) with a spin-frustrated lattice. We observe temperature-independent behavior below T approximately 0.3Tc, which is firm evidence for the presence of an isotropic superconducting gap in this material. In the whole temperature range the superfluid density is very well described, without the need of adjustable parameters, by a strong-coupling extension of the BCS model for an isotropic gap. Thus, the penetration depth results indicate that KOs2O6 is a strong-coupling superconductor with a fully developed energy gap. No effect of the second phase transition taking place at Tp=7.5 K was observed on the penetration depth, which suggests that the Cooper pairs remain unperturbed across this transition.     

Evidence for line nodes in the superconducting energy gap of noncentrosymmetric CePt3Si from magnetic penetration depth measurements

We report measurements of the magnetic penetration depth lambda(T) in high-quality CePt3Si samples down to 0.049 K. We observe a linear temperature dependence below T approximately equal to 0.16Tc, which is interpreted as evidence for line nodes in the energy gap of the low-temperature phase of this material. A kink in lambda(T) at about 0.53 K may be associated with the second superconducting transition recently reported. The results are discussed in terms of the symmetry of the superconducting order parameter.     

Electric-field-effect modulation of the transition temperature, mobile carrier density, and in-plane penetration depth of NdBa2Cu3O7-delta thin films

We explore the relationship between the critical temperature T(c), the mobile areal carrier density n(2D), and the zero-temperature magnetic in-plane penetration depth lambda(ab)(0) in very thin underdoped NdBa(2)Cu(3)O(7-delta) films near the superconductor to insulator transition using the electric-field-effect technique. Having established consistency with a Kosterlitz-Thouless transition, we observe that T(KT) depends linearly on n(2D), the signature of a quantum superconductor to insulator transition in two dimensions with znu(over)=1, where z is the dynamic and nu is the critical exponent of the in-plane correlation length.     

Magnetic-field dependence of the maximum supercurrent of La2-xCexCuO4-y interferometers: evidence for a predominant dx2-y2 superconducting order parameter

We performed a phase-sensitive test of the symmetry of the superconducting order parameter of the electron doped cuprate La(2-x)Ce(x)CuO(4-y) using a superconducting quantum interferometer with spatially distributed Josephson junctions. The studies were made on a thin film grown on a SrTiO3 tetracrystal substrate. The superconducting transition temperature was about 29 K which indicates that the sample is close to optimal doping. The magnetic field dependence of the critical current gives strong evidence for a predominant dx(2)(-y(2)) order parameter symmetry of the sample measured. It also gives upper limits for the s-wave component in a mixed order parameter of the type s+idx(2)(-y(2)).     

Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates

2 (001) epitaxial thin films deposited on Si(001) with yttria-stabilized zirconia buffers have been obtained for the first time at room temperature by pulsed-laser deposition. The influence of oxygen pressure on the crystal quality of CeO₂ was studied for the films deposited at 100 °C. The rocking curve full width at half maximum of the CeO₂(002) peak for films deposited at room temperature and 100 °C was between 1° and 2°, for oxygen pressures below 3×10^-2 mbar. The best crystal quality was obtained at around 3×10^-3 mbar. Epitaxial growth at room temperature was confirmed by cross-sectional transmission electron microscopy. Scanning electron microscopy and atomic force microscopy revealed very smooth surfaces for oxygen pressure below 3×10^-2 mbar, with rms roughness values around 0.3 nm over 5 μm×5 μm. Received: 25 September 1997/Accepted: 22 April 1998