Order-disorder transition on Si(001)

A phase transition between c(4x2) and 2x1 structures on the Si(001) surface has been observed at 200 K by low-energy electron diffraction. This transition is a second order order-disorder transition of the asymmetric dimer configuration. The streak pattern remains up to well above the transition temperature. The temperature dependence of the width and the length of the streak can be described in terms of the effects of a strong anisotropic coupling between adjacent asymmetric dimers.     

Origin of p(2 x 1) phase on Si(001) by noncontact atomic force microscopy at 5 k

The controversial issue of the origin of the p(2 x 1) reconstruction of the Si(001) surface observed in recent low temperature scanning tunneling microscopy experiments is clarified here using 5 K noncontact atomic force microscopy. The c(4 x 2) phase is observed at separations corresponding to weak tip-surface interactions, confirming that it is the ground state of the surface. At larger frequency shifts the p(2 x 1) phase of symmetric dimers is observed. By studying the interaction of a reactive Si tip with the c(4 x 2) Si(001) surface using an ab initio method, we find that the observed change in the surface reconstruction is an apparent effect caused by tip induced dimer flipping resulting in a modification of the surface structure and appearance of the p(2 x 1) phase in the image. Using an appropriate scanning protocol, one can manipulate the surface reconstruction at will, which has significance in nanotechnology.     

Surface Reconstruction of Pt/Si(001)

Platinum-induced surface reconstructions on Si(001) were investigated by scanning tunneling microscopy. The Si(001) surface shows c(4×6)+c(4×2)-type reconstruction after Pt hot deposition at 750 °C. The c(4×2) reconstruction is formed by regular arrangement of Pt ad-atoms at the hollow sites between two Si dimers on Si(001). The c(4×6) structure is formed by long-range ordering of Si dimers superimposed on the c(4×2) reconstruction. The surface reconstruction changes with the local Pt coverage and missing dimer density. An atomic model for c(4×6)+c(4×2) is proposed based on the observed c(4×4) surface reconstruction, a new surface reconstruction, which is observed following a high-temperature anneal at 900 °C. The c(4×4) surface reconstruction is regular and ordered in both the dimer-row direction and the direction perpendicular to the dimer rows. The reconstruction is formed by the regular arrangement of Si dimers and Pt ad-atoms sitting on top of the hollow sites surrounded by two dimers. An atomic model for this new reconstruction is proposed. PACS 68.35.Bs; 68.37.Ef; 68.43.Fg     

Trapping-mediated chemisorption of ethylene on Si(001)-c(4 x 2)

Adsorption of ethylene molecules on Si(001)-c(4 x 2) was studied using scanning tunneling microscopy at low temperatures. Ethylene molecules trapped at the surface at 50 K were imaged only after decay to chemisorption, each bonding to a Si dimer. Atomic-scale observations of temperature-dependent kinetics show that the decay exhibited Arrhenius behavior with the reaction barrier of 128 meV in clear evidence of the trapping-mediated chemisorption, however, with an anomalously small preexponential factor of 300 Hz. Such a small prefactor is attributed to the entropic bottleneck at the transition state caused by the free-molecule-like trap state.     

Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)

A phase transition between c(4 × 2) and (2 × 1) structures on the clean Si(001) surface has been observed at about 200 K by low energy electron diffraction. From the temperature dependence of the width and intensity of the diffraction spots this transition is concluded to be a second order order-disorder transition. The transition proceeds by a single stage, which is in strong contrast with the case of Ge(001) for which a two-stage transition has been reported.     

Structural phase transition on Si(001) and Ge(001) surfaces

Among a variety of solid surfaces, Si(001) and Ge(001) have been most extensively studied. Although they seem to be rather simple systems, there have been many conflicting arguments about the atomic structure on these surfaces. We first present experimental evidence indicating that the buckled dimer is the basic building block and that the structural phase transition between the low-temperature c(4x2) structure and the high-temperature (2x1) structure is of the order-disorder type. We then review recent theoretical work on this phase transition. The real system is mapped onto a model Ising-spin system and the interaction parameters are derived from total-energy calculations for different arrangements of buckled dimers. The calculated critical temperature agrees reasonably well with the experimental one. It is pointed out that the nature of the phase transition is crucially affected by a small amount of defects on the real surfaces.     

Structure and stability of the anatase TiO2 (101) and (001) surfaces

Well-defined (101) and (001) surfaces of anatase TiO₂ were studied for the first time by secondary-electron imaging and low-energy electron diffraction. Initially, both surfaces show a crystalline structure corresponding to the bulk anatase phase, buried under an atomically thin contamination layer. After mild sputtering with 500 eV Ne⁺ ions, we have observed a surface phase transition from tetragonal anatase to face-centered cubic titanium monoxide TiO. Subsequent annealing at 900 K restores the (1×1) anatase structure at the (101) surface. On the (001) surface, however, a (1×4) reconstruction appears. The unreconstructed structure can be recovered by exposing the surface to oxygen. These observations demonstrate the stability of the anatase surfaces and illustrate the feasibility of preparing and investigating clean surfaces of this technological important form of TiO₂.     

Primary processes of laser-induced selective dimer-layer removal on Si(001)-(2x1)

Excitation with nanosecond-laser pulses at fluences well below the melt threshold removes Si dimers on the Si(001)-(2x1) surface and induces atomic-Si desorption through an electronic mechanism. The rate of this photoinduced reaction depends superlinearly on the excitation intensity, and is enhanced resonantly at the photon energy where the optical transition injects holes into the dimer backbond surface-band state. The results reveal the crucial role of surface holes and their nonlinear localization in the bond rupture of Si dimers on this surface.     

Two-dimensional carbon incorporation into Si(001): C amount and structure of Si(001)-c(4 x 4)

The C amount and the structure of the Si(001)-c(4 x 4) surface is studied using scanning tunneling microscopy (STM) and ab initio calculations. The c(4 x 4) phase is found to contain 1/8 monolayer C (1 C atom in each primitive unit cell). From the C amount and the symmetry of high-resolution STM images, it is inferred that the C atoms substitute the fourth-layer site below the dimer row. We construct a structure model relying on ab initio energetics and STM simulations. Each C atom induces an on-site dimer vacancy and two adjacent rotated dimers on the same dimer row. The c(4 x 4) phase constitutes the subsurface Si(0.875)C(0.125) delta layer with two-dimensionally ordered C atoms.     

Structural stability and phase transitions in K8Si46 clathrate under high pressure

The structural stability of type-I K8Si46 clathrate has been investigated at high pressure by synchrotron x-ray diffraction. In contrast to that observed in the Na-doped structure-II analogue [A. San-Miguel, Phys. Rev. Lett. 83, 5290 (1999)]], no phase separation into the beta-Sn Si structure was identified at 11 GPa. Instead, K8Si46 is found to undergo a transition to an isostructural positional disordered phase at around 15 GPa. Ab initio phonon band structure calculations reveal a novel phenomenon of phonon instabilities of K atoms in the large cavities is responsible for this transition. Above 32 GPa, the new structure transforms into an amorphous phase.     

FI-STM STUDY OF HYDROGEN ADSORPTION ON Si(100) SURFACE

Chemisorption of atomic hydrogen on the Si(100)2×1 surface has been investigated in detail by using a field ion-scanning tunneling microscope (FI-STM). The results showed that the adsorption geometry changed from the 2×1 monohydride phase to the 1×1 dihydride phase with increasing exposure of hydrogen. The data of desorption of the hydrogen-saturated Si surface showed that on annealing at 670K the surface becomes highly disordered: the 1×1 dihydride structure is eliminated and the 2×1 reconstructed monohydride is also hardly to identify. When the temperature rises to as high as 730 K, the surface is domi-nated by the 2×1 structure with missing dimer rows, and some adatom chains occur on the Si substrate ler-races. We attribute the formation of these atomic chains to an epitaxial growth of Si atoms which are formed by the dissociation of SiH_x (x= 1, 2, 3 or 4) compounds on the Si surface.     

Ag/Si（111）超薄膜光学二次谐波强度变化与结构相变研究

在130-830K温度范围内,系统研究了Si（111）-√3×√3-Ag和Si（111）-3×1-Ag超薄膜重构表面的光学二次谐波的温度依赖性,分析了信号强度的变化和表面结构之间的关联.结果表明,对于Si（111）-3×3-Ag结构薄膜表面而言,在130K到320 K的温度范围内,表面光学二次谐波信号强度的变化中没有出...     

Low-energy electron diffraction study of the phase transition of Si(001) surface below 40 K

The phase transition of Si(001) surface below 40 K was studied by low-energy electron diffraction (LEED). The temperature dependence of the intensities and widths of the quarter order diffraction spots and LEED intensity versus electron energy curves (I-V curves) were obtained in the temperature region from 20 to 300 K. While the spot intensities of the quarter order spots decrease and the widths broaden, the I-V curves do not change so much below 40 K. This clearly shows that a phase transition occurs from an ordered phase above 40 K to a disordered phase below 40 K.     

Surface Structure and Electronic Property of InP（001）-（2×1）S Surface： A First-Principles Study

The surface structure and electronic property of InP（001）-（2 ×1）S surface under S-rich condition are investigated based on first-principles simulations. The analyses of phase transition show that the 3B model is the most stable structure and the S-S dimer is difficult to form. The geometry of the 3B structure agrees well with the experiments. It is also found that the 3B structure has a good passivation with a band gap of about 1.24eV. The results indicate that the 3B structure is the best candidate for the sulfur-rich InP（001）（2 × 1）A phase.     

Formation mechanism of one-dimensional Si islands on a H/Si(001) surface

The formation mechanism of one-dimensional Si islands on a H/Si(001)-(2x1) surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation.     

Vanadium nanoclusters on Si(1 1 1) 7 × 7 surface studied by scanning tunneling microscopy

The size distribution and shape transition of self-assembled vanadium silicide clusters on Si(1 1 1) 7 × 7 have been investigated by scanning tunneling microscopy. Nanoclusters were formed by submonolayer vanadium deposition at room temperature followed by subsequent annealing (solid phase epitaxy - SPE). At room temperature, initially V-nanoclusters are formed which occupy sites avoiding the corner hole parts of the unit cells in the Si(1 1 1) 7 × 7 surface. Upon annealing, strong metal-silicon reaction occur leading to the formation of vanadium silicide nanoclusters. As a function of temperature, both, flat (2D) and three dimensional (3D) clusters have been obtained. After annealing at temperatures around 900 K many faceted clusters are created, whereas at higher annealing temperature, around 1300 K, predominantly 3D clusters are formed. The size distribution of SPE grown clusters could be well controlled in the range of 3-10 nm. The cluster size depends on the annealing temperature as well as on the initial vanadium coverage. Based on high resolution STM images a structure model for one kind of vanadium disilicide clusters exposing atomically flat surfaces was proposed.     

Monte Carlo simulated annealing study of mixed Si–Ge and C–C dimer adsorption on a Si (001) 2×1 surface

Energetics and structural relaxations related to the surface complexes formed by mixed Si–Ge and C–C dimer adsorption on predefined adsorption sites on a (2×1) reconstructed Si (001) surface are investigated. Monte Carlo simulated annealing procedure is used in conjugation with Tersoff's semi-empirical potentials. The reliability check of the method is performed by comparing our results for the case of Si–Ge dimer adsorption with the results reported by using ab initio pseudo-potential calculations. The agreement is found to be good. For carbon dimer adsorption, the nucleation centers are found to be different from those for Si and Ge. It is seen that carbon has a tendency to get adsorbed at the dangling bond site, or to form a Si–C–C–Si chain like structure under specific conditions.     

Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands

Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 10(2)-10(3) times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, the growth of a compressive SiGe film is rather different from that of a tensile film. The diffusion disparity between Si and Ge is also greatly enhanced on the strained Ge islands compared to that on the Ge wetting layer on Si(001), explaining the experimental observation of Si enrichment in the wetting layer relative to that in the islands.     

Structural and phase transformations during initial stages of copper condensation on Si(001)

Auger-electron spectroscopy, electron-energy loss spectroscopy, low-energy electron diffraction, and atomic-force microscopy are employed to investigate the growth mechanism, composition, structural and phase states, and morphology of Cu films (0.1–1 nm thick) deposited on a Si(001)-2 × 1 surface at a lower temperature of Cu evaporation (900°C) and room temperature of a substrate. The Cu film phase is shown to start growing on the Si(001)⁻² × 1 surface after three Cu monolayers (MLs) are condensed. It has been revealed that atoms of Cu and Si(001) are mixed, a Cu₂Si film phase is formed, and, thereafter, Cu₃Si islands arise at a larger coating thickness. Annealing of the first Cu ML leads to reconstruction of the Si(001)-1 × 1-Cu surface layer, thereby modifying the film growth mechanism. As a consequence, the Cu₂Si film phase arises when the thickness reaches two to four MLs, and bulk Cu₃Si silicide islands begin growing at five to ten MLs. When islands continue to grow, their height and density reach, respectively, 1.5 nm and 2 × 10¹¹ cm⁻² and the island area is 70% of the substrate surface at a thickness of ten MLs.