Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Graphene on gallium nitride(GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5–6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1Ω/square,which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

Effect of Al Doping on Properties of SiC Films

Undoped and Al-doped 3C-SiC films are deposited on Si（100） substrates by low-pressure chemical vapour deposition. Effects of aluminium incorporation on crystallinity, strain stress, surface morphology and growth rate of SiC films have been investigated. The x-ray diffraction patterns and rocking curves indicate that the crystallinity is improved with aluminium doping. Raman scatting patterns also demonstrate that the strain stress in SiC films is released due to the incorporation of Al ions and the increase of film thickness. Furthermore, due to the catalysis of surface reaction which is induced by trimethylaluminium, the growth rate is increased greatly and the growth process varies from three-dimensional island-growth mode to step-flow growth mode.     

Influence of Zr_(50)Cu_(50) thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.     

Thickness optimization of Mo films for Cu（InGa）Se2 solar cell applications

Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.     

Transparent conductive reduced graphene oxide thin films produced by spray coating

Reduced graphene oxide thin films were fabricated on quartz by spray coating method using a stable dispersion of reduced graphene oxide in N,N-Dimethylformamide.The dispersion was produced by chemical reduction of graphene oxide,and the film thickness was controlled with the amount of spray volume.AFM measurements revealed that the thin films have near-atomically flat surface.The chemical and structural parameters of the samples were analyzed by Raman and XPS studies.It was found that the thin films show electrical conductivity with good optical transparency in the visible to near infrared region.The sheet resistance of the films can be significantly reduced by annealing in vacuum and reach 58 k?with a light transmittance of 68.69%at 550 nm.The conductive transparent properties of the reduced graphene oxide thin films would be useful to develop flexible electronics.     

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C–SiC

The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and mi- crostructure of A1/3C-SiC structure. The electrical properties of A1 contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of A1 contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the A1 contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing tem- perature is above 650 ℃. A minimum specific contact resistance of 1.8 × 10-4 Ω cm2 is obtained when the A1 contact is annealed at 250 ℃.     

Novel pressure and displacement sensors based on carbon nanotubes

We report newly designed pressure and displacement capacitive sensors based on a flexible paper–CNT structure.The carbon nanotube(CNT)powder was deposited on a thin paper substrate and was pressed at an elevated temperature.The sheet resistance of the paper–CNT films was in the range of 2–4 kΩ/cm2.The paper–CNT films were used to fabricate pressure and displacement sensors.The sensitivities of the pressure and the displacement sensors were found to be17.3 p F·m2/k N and 0.93 10-3p F/μm,respectively.The experimental results were compared with the simulated data and they found good agreement with each other.     

Annealing induced refinement on optical transmission and electrical resistivity of indium tin oxide

The effect of annealing condition on sputtered indium tin oxide （ITO） films on quartz with the thickness of 200 nm is characterized to show enhanced optical transparency and optimized electrical contact resistivity. The as-deposited grown ITO film exhibits only 65% and 80% transmittance at 532 and 632.8 nm, respectively. After annealing at 475 ℃ for 15 min, the ITO film is refined to show improved transmittance at shorter wavelength region. The transmittances of 88.1% at 532 nm and 90.4% at 632.8 nm can be obtained. The 325-nm transmittance of the post-annealed ITO film is greatly increased from 12.7% to 41.9%. Optimized electrical property can be obtained when annealing below 450 ℃, leading to a minimum sheet resistance of 26 Ω/square. Such an ITO film with enhanced ultraviolet （UV） transmittance has become an alternative candidate for applications in current UV photonic devices. The morphology and conductance of the as-deposited and annealed ITO films are determined by using an atomic force microscopy （AFM）, showing a great change on the uniformity distribution with finite improvement on the surface conductance of the ITO film after annealing.     

Spectroscopy and Optical Properties of Novel Metal（Ⅱ）-Azo Complex Films in Blue-Violet Light Region

A novel azo derivative,α-（2-azoxyisoxazole)-β-diketone derivative (ADD),and its copper (Ⅱ） and nickel （Ⅱ） complex (CuADD and NiADD) films have been prepared respectively by spin-coated method.The absorption spectra of the films on a K9 glass substrate in the 300-800 nm wavelength region have been measured.The optical constants (complex refractive index N=n iκ） and thickness of the complex films on a single-crystal silicon substrate in the 300-600nm wavelength region have been investigated on an improved rotating analyser-polariser (RAP) type of scanning ellipsometer,and the dielectric constants ε（ε=ε1 iε2),absorption coefficients α as well as reflectance R of the films were calculated.It is found that the absorption maxima of the ADD,CuADD and NiADD films are at 324nm,372nm and 385nm,respectively,and small absorption values and steep absorption band edges of the CuADD and NiADD films are observed at the 405nm side;The CuADD and NiADD films give high n values of 2.08 and 1.98,and low κ values of 0.2 and 0.28,respectively,at 405nm,and their thicknesses are in the range of 130-150nm;the high reflectivity of 58.5% and 45.5% of the CuADD and NiADD films with Ag as a reflective layer were obtained at the film thicknesses of 70 nm and 80nm respectively.These results show that the novel CuADD and NiADD films seem to be a very promising organic recording material for the next generation of high density digital versatile disc-recordable (HD-DVD-R) systems that use a high numerical aperture of 0.85 at 405nm wavelength.     

Enhancement of green emission by the codoping U . 3＋ A＋ （A - Li, Na, K） in Ca2 O3CI.Tb phosphor

Tb3＋-doped Ca2BO3C1 compounds with different charge compensation approaches are synthesized by a hightemperature solid-state reaction method, and the luminescent properties and Commission Internationale de l＇Eclairage （CIE） chromaticity coordinates are systematically characterized. Ca2BO3Cl：Tb3＋ can produce green emission under 376 nm radiation excitation. With codoped A＋ （A = Li, Na, K） as charge compensators, the relative emission intensities of Ca2BO3Cl：Tb3＋ are enhanced by about 1.61, 1.97, and 1.81 times compared with those of the direct charge balance, which is considered to be due to the effect of the difference in ion radius on the crystal field. The CIE chromaticity coordinates of Ca2BO3CI：Tb3＋, A＋ （A = Li, Na, K） are （0.335, 0.584）, （0.335, 0.585）, and （0.335, 0.585）, corresponding to the hues of green. Therefore, A＋ （A = Li, Na, K） may be the optimal charge compensator for Ca2BO3Cl：Tb3＋.     

Enhanced ferroelectricity and ferromagnetism in Bio.9Bao. 1FeO3/Laz/3Srl/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

High pressure X-ray diffraction study of CaMnO3 perovskite

Using a diamond anvil cell device and synchrotron radiation,the in-situ high-pressure structure of CaMnO3 has been investigated.In the pressure up to 36.5 GPa,no pressure-induced phase transition is observed.The pressure dependence on the lattice parameters of CaMnO3 is reported,and the relationship of the axial compression coefficients is βa 〉 βc 〉 βb.The isothermal bulk modulus K298=224（25） GPa is also obtained by fitting the pressure-volume data using the Murnaghan equation of state.     

Magnetic iron oxide nanoparticles: Synthesis and surface coating techniques for biomedical applications

Iron oxide nanoparticles are the most popular magnetic nanoparticles used in biomedical applications due to their low cost, low toxicity, and unique magnetic property. Magnetic iron oxide nanoparticles, including magnetite （Fe304） and maghemite （γ-Fe203）, usually exhibit a superparamagnetic property as their size goes smaller than 20 nm, which are often denoted as superparamagnetic iron oxide nanoparticles （SPIONs） and utilized for drug delivery, diagnosis, therapy, and etc. This review article gives a brief introduction on magnetic iron oxide nanoparticles in terms of their fundamentals of magnetism, magnetic resonance imaging （MRI）, and drug delivery, as well as the synthesis approaches, surface coating, and application examples from recent key literatures. Because the quality and surface chemistry play important roles in biomedical applications, our review focuses on the synthesis approaches and surface modifications of iron oxide nanopar- ticles. We aim to provide a detailed introduction to readers who are new to this field, helping them to choose suitable synthesis methods and to optimize the surface chemistry of iron oxide nanoparticles for their interests.     

Evolution of nitrogen structure in N-doped diamond crystal after high pressure and high temperature annealing treatment

In this paper, we have reported an investigation on the evolution of nitrogen structures in diamond crystals which contain nitrogen donor atoms in the range of 1500 ppm-1600 ppm following an annealing treatment at a high pressure of about 6.5 GPa and high temperatures of 1920 K-2120 K. The annealing treatment was found to completely transform nitrogen atoms originally arranged in a single substitutional form （C-center）, into a pair form （A-center）, indicated from infrared （IR） spectra. The photoluminescence （PL） spectra revealed that a small fraction of nitrogen atoms remained in C-center form, while some nitrogen atoms in A-center form were further transformed into N3 and H3 center structures. In addition, PL spectra have revealed the existence of two newly observed nitrogen-related structures with zero phonon lines at 611 nm and 711 nm. All these findings above are very helpful in understanding the formation mechanism of natural diamond stones of the Ia-type, which contains nitrogen atoms in an aggregated form.     

Status of KLOE-2

In a few months the KLOE-2 detector is expected to start data taking at the upgraded DAФNE φ-factory of INFN Laboratori Nazionali di Frascati. It aims to collect 25 fb^-1 at the φ（1020） peak, and about 5 fb^-1 in the energy region between 1 and 2.5 GeV. We review the status and physics program of the project.     

Subsolidus phase relation in the Bi2O3-Fe203-La2O3 system

Bismuth-containing semiconductor material is a hot topic in photocatalysts because of its effective absorption under the visible light. In this paper, we expect to explore a new bismuth-based photocatalyst by studying the subsolidus phase relations of the Bi2O3-Fe2O3-La2O3 system. The X-ray diffraction data shows that in this ternary system the ternary compound does not exist, while seven binary compounds （including one solid solution series Bi1-xLaxO1.5 with 0.167 〈 x 〈 0.339） are obtained and eight compatibility triangles are determined.     

Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient

In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing （PDA） in the oxygen ambient is studied. Atomic layer deposited （ALD） Al2O3 films with four different thickness values （5 nm, 7 nm, 9 nm, 11 rim） are deposited on InP substrates. The capacitance-voltage （C-V） measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy （XPS） data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.     

Ab-initio density functional theory study of a WO3 NHa-sensing mechanism

WO3 bulk and various surfaces are studied by an ab-initio density functional theory technique. The band structures and electronic density states of WO3 bulk are investigated. The surface energies of different WO3 surfaces are compared and then the （002） surface with minimum energy is computed for its NH3 sensing mechanism which explains the results in the experiments. Three adsorption sites are considered. According to the comparisons of the energy and the charge change between before and after adsorption in the optimal adsorption site Olc, the NH3 sensing mechanism is obtained.     

Nucleon aPF2 Superfluid Pairing Gap in Asymmetry Nuclear Matter

The 3 P F2 superfluidity of neutron and proton is investigated in isospin-asymmetric nuclear matter within the Brueckner-Hartree-Fock approach and the BCS theory by adopting the Argonne V14 and the Argonne V18 nucleonnucleon interactions. We find that pairing gaps in the 3PF2 channel predicted by adopting the AV14 interaction are much larger than those by the AV18 interaction. As the isospin-asymmetry increases, the neutron 3 pF2 superfluidity is found to increase rapidly, whereas the proton one turns out to decrease and may even vanish at high enough asymmetries. As a consequence, the neutron 3pF2 superfluidity is much stronger than the proton one at high asymmetries and it predominates over the proton one in dense neutron-rich matter.