Monolithically Integrated All-optical Switch using Quantum Well Intermixing

We report the realization of a compact monolithically integrated all-optical switch using selective area bandgap tuning of a multiple quantum well structure by impurity-free vacancy induced disordering technique. A 3-dB waveguide coupler was fabricated in the disordered section of the switch device. All-optical wavelength conversion at 1Gb/s was demonstrated.     

Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In<Subscript>0.2</Subscript>Ga<Subscript>0.8</Subscript>As/GaAs multiquantum-well structure by dielectric capping layers

The feasibility of normal GaAs, low-temperature-grown GaAs (LT-GaAs) and low-temperature-grown InGaAs (LT-InGaAs) as the capping layers for impurity-free vacancy disordering (IFVD) of the In_0.2Ga_0.8As/GaAs multiquantum-well (MQW) structure has been studied. The normal GaAs, LT-GaAs and LT-InGaAs layers were tested as the outermost capping layer and the intermediate cap layer underneath the SiO₂ or Si₃N₄ capping layer. The degree of quantum-well intermixing (QWI) induced by rapid thermal annealing was estimated by the shift of the photoluminescence (PL) peak energy. It was found that the IFVD of the In_0.2Ga_0.8As/GaAs MQW structure using LT-GaAs (LT-InGaAs) as the outermost capping layer was much smaller (larger) than that using a SiO₂ (Si₃N₄) capping layer. It was also observed that the insertion of the normal GaAs, LT-GaAs and LT-InGaAs cap layers below the SiO₂ or Si₃N₄ capping layer reduces the degree of QWI and the PL intensity after the QWI. A plausible explanation for the influence of normal GaAs, LT-GaAs and LT-InGaAs cap layers for the QWI of the InGaAs/GaAs structure is also discussed. PACS 68.55.Ln; 73.20.Dx; 78.55.-m     

Enhancement of laser ablation yield by two color excitation

This work studied the implementation of multi-wavelength laser diodes on a single substrate through the position-dependent bandgap modification of the In_0.2Ga_0.8As/ GaAs multiple quantum wells (MQWs) by impurity-free vacancy disordering (IFVD). The position-dependent bandgap modification is achieved by performing the IFVD with SiO_x capping layers with different stoichiometries. The lasing wavelength difference of about 31 nm was obtained between the ridge-waveguide laser diodes fabricated with the MQWs that had undergone the same thermal treatments using the SiO_x film provided with SiH₄ flow rates of 20 and 300 sccm. The device performance was not appreciably degraded in the laser diodes fabricated with the MQWs that had undergone the IFVD process . PACS 68.65.Fg; 78.55.-m; 42.55.Px     

The onset of disorder in Al(110) surfaces below the melting point

Molecular dynamics simulations of the disordering of Al(110) surfaces below the melting point are presented. Effective medium theory has been used to calculate the inter-atomic many-body interactions of the metallic system. The origin of the anisotropy of the disordering with respect to the direction along the surface deduced from LEED experiments is suggested to be mainly a consequence of the g² dependence of the Debye-Waller factor even for non-harmonic interactions. Further evidence is presented showing that the disordering of the first layers coincides with the onset of surface vacancy formation.     

InGaAs(P)/InP MQW mixing by Zn diffusion,Ge and S implantation for optoelectronic applications

There is a growing interest in impurity-induced layer disordering for the technologically important InGaAs(P)/InP system. More complicated than in the AlGaAs/GaAs ternary system, which concerns only interdiffusion of group III atoms, interdiffusion in this quaternary system can occur for both group III (Ga,In) and group V (P,As) atoms, which may or may not result in a strain-free alloy lattice-matched to InP, a major concern for device applications. After a brief review on the thermal stability of InP/ InGaAs quantum well structures, we show that Zn diffusion at moderate temperature leads to intermixing on the group III sublattice, only, with subsequent lattice mismatch. On the other hand, either Ge or S implantation of InGaAs/InP quantum wells results in intermixing involving both the group III and the group V sublattice and approximating the lattice-matched condition.     

Modeling phase decomposition and patterning in binary alloy systems subjected to neutron irradiation

We study processes of phase decomposition and patterning in a model of a binary alloy system subjected to sustained irradiation. We exploit the reaction rate theory and generalize the Darken approach of vacancy diffusion to describe generation, recombination, annihilation and spatial interaction of point defects. It is shown that an increase in the defect production rate phase, decomposition processes are replaced by disordering and patterning with vacancy clusters' formation. At elevated damage rates, both phase separation and patterning are accompanied by pattern selection processes. In the framework of numerical simulations, dynamics of phase decomposition and vacancy clusters formation is studied in detail. A change in the morphology of vacancy clusters during irradiation and their statistical properties are discussed.     

Post-growth tailoring of the optical properties of GaAs/AlGaAs quantum well structures

In this paper we describe a method for performing post-growth bandgap engineering in the GaAs/AlGaAs quantum well system. The method used is impurity-free vacancy diffusion. Using both single and multiple quantum well data we show that this allows blue shifts in the optical properties, while retaining both their distinctive excitonic and electrical characteristics. The electrical response is modelled and no comparative degradation of the quantum confined Stark effect is predicted, and this is confirmed experimentally. Possible applications of this technique are mentioned.     

Recent advances in phase matching of second‐order nonlinearities in monolithic semiconductor waveguides

Techniques used to assist phase matching of second‐order nonlinearities in semiconductor waveguides are reviewed. The salient points of each method are highlighted, with their strengths and weaknesses with regard to various key applications discussed. Recent progress in these techniques is also reviewed. Emphasis is placed on two techniques, namely quasi‐phase matching via domain disordering utilizing quantum well intermixing, and exact phase matching using Bragg reflection waveguides.     

Analysis of using femtosecond laser scanning system to impurity-induced disordering of InGaAsP quantum wells

This study is the first to demonstrate the selectivity quantum well intermixing process by using a femtosecond laser scanning-induced disordering technique. The advantages of the femtosecond laser are photochemical machining and the two-photon absorption mechanism. The femtosecond laser system can convert writing into the scan to create a nanostructure by adjusting the lens. The effect of power on the band gap shift during laser scanning was investigated. The band gap shift was small and unstable without the heating substrate. A wavelength shift higher than 77.3 nm for the InGaAsP MQW material was obtained at elevated temperatures.     

High-temperature transition in SrFeO<Subscript>2.5</Subscript>: LSDA+U simulation

The effects of oxygen vacancy disordering in structural features and magnetic characteristics of SrFeO_2.5 are studied by the LMTO method in frameworks of the LSDA+U formalism in supercell approximation. Results clearly show that the high-temperature pseudocubic phase of SrFeO_2.5 may contain iron ions in five-fold oxygen coordination.     

无杂质空位扩散法造成InGaAsP/InP多量子阱结构带隙蓝移规律的研究

采用光荧光谱(PL)和光调制反射谱(PR)的方法,研究了由Si₃N₄、SiO₂电介质盖层引起的无杂质空位(IFVD)诱导的InGaAsP四元化合物半导体多量子阱(MQWs)结构的带隙蓝移。实验中Si₃N₄、SiO₂作为电介质盖层,用来产生空位,再经过快速热退火处理(RTA)。实验结果表明:多量子阱结构带隙蓝移和退火温度、复合盖层的组合有关。带隙蓝移随退火温度的升高而加大。InP、Si₃N₄复合盖层产生的带隙蓝移量大于InP、SiO₂复合盖层。而InGaAs、SiO₂复合盖层产生的带隙蓝移量则大于InGaAs、Si₃N₄复合盖层。同时,光调制反射谱的测试结果与光荧光测试的结果基本一致,因此,PR谱是用于测试带隙变化的另一种方法。     

Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers

Defects created in rapid thermally annealed n-GaAs epilayers capped with native oxide layers have been investigated using deep-level transient spectroscopy (DLTS). The native oxide layers were formed at room temperature using pulsed anodic oxidation. A hole trap H0, due to either interface states or injection of interstitials, is observed around the detection limit of DLTS in oxidized samples. Rapid thermal annealing introduces three additional minority-carrier traps H1 (E_V+0.44 eV), H2 (E_V+0.73 eV), and H3 (E_V+0.76 eV). These hole traps are introduced in conjunction with electron traps S1 (E_C-0.23 eV) and S2 (E_C-0.45 eV), which are observed in the same epilayers following disordering using SiO₂ capping layers. We also provide evidence that a hole trap whose DLTS peak overlaps with that of EL2 is present in the disordered n-GaAs layers. The mechanisms through which these hole traps are created are discussed. Capacitance–voltage measurements reveal that impurity-free disordering using native oxides of GaAs produced higher free-carrier compensation compared to SiO₂ capping layers. Received: 12 March 2002 / Accepted: 15 July 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +61-2/6125-0381, E-mail: pnk109@rsphysse.anu.edu.au     

Polymorphic transformations in nanostructured anatase (TiO2) under high-pressure shock compression

The action of dynamic pressure and temperature on polymorphic transformations in nanostructured (grain size of 8–20 nm) anatase (TiO₂) is studied. The dynamic pressure of a loading pulse (10–45 GPa) is measured with a manganin gauge. The temperature of shock-compressed specimens, which is varied by varying the initial temperature and initial porosity, is found to fall into the range 500–2500 K. It is shown that as the temperature and shock compression pressure rise, the nanostructured anatase turns into a nanoanatase-nanocolumbite or columbite-rutile mixture or into almost impurity-free (pure) nanocolumbite or impurity-free microcrystalline rutile.     

X-ray photoelectron spectroscopy study of disordering in Gd2(Ti1-xZrx)2O7 pyrochlores

The dramatic increases in ionic conductivity in Gd2(Ti1-xZrx)2O7 solid solution are related to disordering on the cation and anion lattices. Disordering in Gd2(Ti1-xZrx)2O7 was characterized using x-ray photoelectron spectroscopy (XPS). As Zr substitutes for Ti in Gd2Ti2O7 to form Gd2(Ti1-xZrx)2O7 (0.25 < x < or =0.75), the corresponding O 1s XPS spectrum merges into a single symmetric peak. This confirms that the cation antisite disorder occurs simultaneously with anion disorder. Furthermore, the O 1s XPS spectrum of Gd2Zr2O7 experimentally suggests the formation of a split vacancy.     

Radiation-induced electronic and ionic charge storage and release in sapphire

Radiation-induced thermally stimulated relaxation (TSR) processes in the reduced f -Al 2 O 3 (sapphire) crystal were investigated at 290-650 v K by means of the TS current (TSC), ionic depolarisation current (TSDC) and electron emission (TSEE) techniques. After thermal (ionic) polarisation of sapphire wide (～75 v K) and asymmetric ionic dipolar TSDC peak at T max , 590 v K (disorientation of the anion vacancy-related dipoles) was detected. This peak correlates with the wide TSEE peak at T max , 615 v K, the radiation-induced electrical degradation (RIED) yield rise above 550 v K ( T max , 745 v K) and the chromium emission line broadening in ruby. Above 450-500 v K the anion vacancy hopping (migration) starts. This can lead to lattice dynamic disordering and anion vacancy diffusion-controlled processes in sapphire (especially in vacuo near the sample surface, grain boundaries, dislocations) in various TSR (TSC, TSDC, TS heat release and bleaching) and RIED phenomena. Surface structure and impurity content, surrounding atmosphere (vacuum or air) and electric fields determine these phenomena.     

Structure of Ion-Implanted Alloys with Long-Range Order in a Field Ion Microscope

In the present review we describe the series of investigations in which field ion microscopy is used to study the structural and phase changes in alloys with long-range order and in pure metals after ion implantation by different gas ions. It is demonstrated that ion implantation induces defects of different types spread to considerable depths from the irradiated surface that exceed many times the estimated ion mean free path. It is established that disordering and generation of various defects can be observed under irradiation of the ordered alloy surfaces. In PdCuAg alloys being supersaturated solid solutions, the irradiation provokes the intermittent decomposition. The structure of defects induced by ion implantation including disordered regions, dislocations, dislocation configurations, dislocation barriers, vacancy clusters, and segregations of one of the components is analyzed. The structure and sizes of these defects inside single cascades of displacements are determined.     

Influence of a Static Electric Field on the Dielectric Properties of LiNbO3

Technical Physics - The influence of a static electric field on the dielectric properties of nominally pure (impurity-free) LiNbO3 crystals with congruent composition has been studied in the low...     

Identification of Ge/Si intermixing processes at the Bi/Ge/Si(111) surface

The chemical contrast between Si and Ge obtained by scanning tunneling microscopy on Bi-covered Si(111) surfaces is used as a tool to identify two vertical Ge/Si intermixing processes. During annealing of an initially pure Ge monolayer on Si, the intermixing is confined to the first two layers approaching a 50% Ge concentration in each layer. During epitaxial growth, a growth front induced intermixing process acting at step edges is observed. Because of the open atomic structure at the step edges, relative to the terraces, a lower activation barrier for intermixing at the step edge, compared to the terrace, is observed.     

Study of oxygen vacancy ordering in mullite at high temperatures

High temperature X-ray diffraction and quenching experiments of mullite single crystals with Al₂O₃:SiO₂ ratio 2:1 have been performed to investigate the stability of the oxygen vacancy ordering close to the melting point of mullite. The experiments show that the structure of mullite exhibits an extremely stable, temperature-independent incommensurate modulation. Inspection of satellite reflections at different temperatures leads to the conclusion that the ordering scheme of oxygen vacancies after the crystallization of mullite persists to the melting point and does not show any disordering effects. The experimental results are in agreement with former theoretical calculations using a statistical mechanics approach which yield the critical temperature T_c > 3000°C.     

Critical role of surface steps in the alloying of Ge on Si(001)

Using low-energy electron microscopy, we show that intermixing of Ge on Si(001) during growth is enhanced on stepped surfaces and is hindered on terraces where step flow does not occur. On large terraces we have identified a dramatic and unanticipated structural rearrangement that facilitates intermixing: Pairs of steps spontaneously form and migrate over the surface, leaving alloyed regions in their wake. The driving force for step formation is the entropy gain associated with the enhanced intermixing of Ge.