纳米结构ZnO在TiO_2薄膜上的电化学沉积及其表征

在三电极体系中,以硝酸锌水溶液作为电解液,采用阴极还原电沉积法成功实现了一维纳米结构ZnO阵列在TiO2纳米粒子/ITO导电玻璃薄膜基底上的沉积,并通过XRD、SEM、EDS和PL光谱等方法对样品进行了表征.重点研究了薄膜基底、电解液浓度、沉积时间、六次亚甲基四胺(HMT)的引入对ZnO沉积及其发光性质的影响.结果显示:与ITO玻璃基底相比,ZnO更易于在TiO2纳米粒子薄膜上实现电化学沉积.ZnO属于六方晶系的铅锌矿结构,并且沿着c-轴方向表现出明显的择优化生长,以形成垂直于基底的ZnO纳米棒阵列.延长沉积时间、增加电解液浓度和引入一定量的HMT等均对ZnO的生长有促进作用,进而使其纳米棒的结晶度和取向程度提高,进而解释了所得的薄膜分别约在375和520nm处表现出ZnO的强而窄的带边紫外光发射峰和弱而宽的表面态绿光发射带.     

Seed layer-free electrodeposition and characterization of vertically aligned ZnO nanorod array film

Vertically aligned arrays of ZnO nanorod (ZNR) were rapidly synthesized on ITO glass without needing a pre-prepared seed layer of ZnO via a hexamethylenetetramine (HMT)-assisted electrodeposition route. The effect of HMT on the ZNR electrodeposition process was investigated by the cyclic voltammetric curve and the current–time curve. An electrodeposition growth model based on the capping effect of HMT–4H was proposed. The as-synthesized ZNRs possess single crystalline, a wurtzite crystal structure with markedly preferential growth orientation along [0001] direction determined by transmission electron microscopy and powder X-ray diffraction. As compared with the electrodeposited ZnO film without HMT assistance, the ZNR arrays showed the high transmittance (90%) in the visible wavelength range and the blue-shift of the band gap energy. Moreover, the presence of an optical-phonon E₂ (high) at 437.3 cm^?1 in Raman spectrum and strong ultraviolet emission at 376 nm but weak defect-related deep level emission in the room temperature photoluminescence spectrum also indicated that such ZNR arrays are of good crystal quality. More importantly, the rapid synthesis of ZNRs could provide the feasibility for preparation of ZnO nanotubes within a shorter time by a subsequent electrochemical dissolution process.     

ZnO纳米棒阵列在TiO2介孔薄膜上的生长及其表征

通过低温水热法成功地将ZnO纳米棒阵列定向生长在了介孔锐钛矿TiO2纳米晶薄膜上,并主要利用X射线衍射、场发射扫描电子显微镜和光致发光光谱等对其进行了表征。所制备的纳米棒具有六边形的端面,纳米棒的尺寸及端面边长分布范围窄,并且沿c轴方向(002)表现出了明显的择优化生长。此外,相比于玻璃基底或TiO2纳米颗粒薄膜,生长在介孔TiO2薄膜上的ZnO纳米棒阵列表现出了较好的取向生长,表明基底的表面结构和组成对ZnO纳米棒阵列的生长有显著的影响。根据基底有序的多孔结构,讨论了纳米棒阵列可能的生长机理。所得到的ZnO纳米棒阵列在室温下分别表现出了以370 nm为中心的强近紫外光和以530 nm为中心的弱绿光两条荧光谱带。     

Ti基ZnO纳米棒阵列的制备及其光催化性能研究

采用两电极体系中恒电流电沉积在Ti基底上制得较均一的ZnO纳米棒阵列,利用SEM和XRD观察表征样品,研究Zn(NO₃)₂浓度及电流密度对ZnO纳米棒阵列微观形貌的影响. 以甲基橙为目标降解物,考察该电极光催化性能. 结果表明,Zn(NO₃)₂浓度和电流密度对纳米棒阵列的形貌有显著影响;与ITO玻璃等其他基底相比,在Ti基底上也可沉积较好均一取向的ZnO纳米棒阵列;紫外灯照射下,ZnO/Ti电极对甲基橙（10 mg·L^-1）模拟印染废水降解2.5 h,降解率达到83.3%,光催化活性较佳;无光照时ZnO纳米棒的降解率仅7%.     

电沉积ZnO纳米棒阵列膜制备及其透光性能研究

应用阴极恒电流电沉积法,以ZnC l2水溶液为电解液,在经预处理的ITO导电玻璃上制备ZnO纳米棒阵列,扫描电子显微镜(SEM)、X射线衍射(XRD)及透射光谱等测试表明,ZnO纳米棒阵列具有c轴高度择优取向,呈六方纤锌矿结构.当入射光波长大于380 nm时,ZnO纳米棒阵列的透光率大于95%,并且禁带宽度变窄.     

P3HT修饰一维有序壳核式CdS/ZnO纳米棒阵列复合膜的光电化学性能

采用电化学方法在铟锡氧化物(ITO)导电玻璃上制备了高度有序的ZnO纳米棒阵列, 在ZnO纳米棒阵列上先后电化学沉积CdS纳米晶膜及聚3-己基噻吩(P3HT)薄膜得到P3HT修饰的一维有序壳核式CdS/ZnO纳米阵列结构, 并通过扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)、能量散射X射线(EDX)等表征手段证实了该结构的形成. 以此纳米结构薄膜为光阳极组装新型半导体敏化太阳电池, 研究了CdS纳米晶膜的厚度和P3HT薄膜的沉积对电池光伏性能的影响, 初步探讨了电荷在电池结构中的传输机理, 结果表明, CdS纳米晶膜和P3HT薄膜的沉积有效地拓宽了光阳极的光吸收范围, 实验中电池的光电转换效率最高达到1.08%.     

Optimization of processing parameters on the controlled growth of ZnO nanorod arrays for the performance improvement of solid-state dye-sensitized solar cells

High-transparency and high quality ZnO nanorod arrays were grown on the ITO substrates by a two-step chemical bath deposition (CBD) method. The effects of processing parameters including reaction temperature (25-95 °C) and solution concentration (0.01-0.1 M) on the crystal growth, alignment, optical and electrical properties were systematically investigated. It has been found that these process parameters are critical for the growth, orientation and aspect ratio of the nanorod arrays, showing different structural and optical properties. Experimental results reveal that the hexagonal ZnO nanorod arrays prepared under reaction temperature of 95 °C and solution concentration of 0.03 M possess highest aspect ratio of ∼21, and show the well-aligned orientation and optimum optical properties. Moreover the ZnO nanorod arrays based heterojunction electrodes and the solid-state dye-sensitized solar cells (SS-DSSCs) were fabricated with an improved optoelectrical performance.     

基底对电沉积制备ZnO纳米棒阵列的影响

采用恒电位电沉积方法, 在未经修饰的ITO导电玻璃基底上通过控制实验条件制备出不同形貌的纳米ZnO结构, 而在经过ZnO纳米粒子膜修饰后的ITO导电玻璃基底上, 制备出透明、高取向、粒径小于30 nm的ZnO纳米棒阵列. 用扫描电子显微镜(SEM)、X射线衍射(XRD)以及透射光谱对制备出的ZnO纳米棒阵列的结构、形貌和透明性进行了表征. 测试结果表明, ZnO纳米棒阵列的平均直径为21 nm, 粒径分布窄, 约18～25 nm, 择优生长取向为[001]方向, 垂直于基底生长. 当入射光波长大于400 nm时, ZnO纳米棒阵列的透光率大于95%.     

Microwave assisted hydrothermal synthesis of zinc hydroxystannate films on glass substrates

Zinc stannate (ZnSnO₃, Zn₂SnO₄) and its precursor, i.e. zinc hydroxystannate (ZnSn(OH)₆), have emerged as technological nanomaterials for different applications. Herein, we report synthesis of polycrystalline zinc hydroxystannate (ZHS) film on glass substrate through facile and efficient microwave assisted hydrothermal growth. The method comprises of three steps; deposition of ZnO seed films on glass substrates through spray pyrolysis, growth of ZnO nanorod arrays over the seeded substrates through microwave assisted hydrothermal method and transformation of the as-synthesized ZnO nanorod arrays into the ZHS films through microwave treatment in aqueous precursor solution of SnCl₄ and NaOH. The films were characterized by energy dispersive X-ray spectroscopy, X-ray diffraction and scanning electron microscopy (SEM). The films contain two crystalline phases namely ZnO with [002] as preferred growth direction and ZnSn(OH)₆ preferably grown along [200] vector. The obtained ZHS films consist of crystals of exclusively cubic structure with sizes up to several microns. Microwave irradiation time, NaOH/SnCl₄ molar ratio, concentration of Sn⁴⁺ ions, and the applied power are the four parameters which influence the size, aerial density and growth rate of ZHS microblocks.     

水热法制备高度取向的氧化锌纳米棒阵列

氧化锌的激子结合能(60meV)及光增益系数(300cm^-1)比GaN的(25meV,100cm^-1)还高,这一特点使它成为紫外半导体激光发射材料的研究热点。最近,Yang等成功地观测到规则的ZnO纳米线阵列的激光发射现象,更加激起了人们合成一维高度有序ZnO纳米结构的热情,由于一维ZnO     

柔性光电器件发光层用ZnO微纳阵列/聚合物复合材料

采用简单的低温(温度未超过100 °C)溶液法在具有较好柔韧度的基于聚对苯二甲酸乙二醇酯(PET)衬底的铟锡氧化物(ITO)导电膜(PET/ITO)上成功制备了聚丙烯酰胺(PAM)修饰的ZnO微纳阵列. 用X射线衍射(XRD)仪和扫描电子显微镜(SEM)对ZnO微纳阵列的晶体结构和表面形貌进行了表征, 结果表明ZnO阵列的平均直径为150 nm, 长度为3 μm, 端面具有六边形结构, 沿[0001]方向择优生长, 较好地垂直在PET/ITO上; 探讨了ZnO微纳阵列在PAM存在下的形成机理以及所制备的ZnO阵列在柔性光电器件方面的应用; ZnO微纳阵列的光致发光(PL)性能表明, 在没有PAM的存在下, 具有蓝光(457 nm)和绿光(530 nm)缺陷发射峰, 这可能是电子分别从扩展态锌间隙(Zn_i)到价带和从导带到锌位氧(O_Zn)的跃迁引起的, 而在PAM存在下所制备的PAM/ZnO阵列仅仅在400 nm处有一个发射峰, 这是由于电子从Zn_i到价带的跃迁引起的. 基于PAM/ZnO的柔性器件具有较好的二极管特性, 表明其在柔性光电器件方面的应用极具潜力.     

Hydrothermal Synthesis and Field Enhancement Behavior of ZnO Nanorods Pattern

We provide a new way to prepare ZnO nanorods pattern from the solution composed of hexamethylenetetramine (HMT) and Zn(NO₃)₂. The substrate is ITO substrate covered by well ordered Au islands. Since Au and the underneath ITO substrate have two different nucleation rates in the initial stage of heterogeneous nucleation process, the subsequent ZnO growth on the quick nucleating area takes place under diffusion control and is able to confine the synthesis of ZnO nanorods to specific locations. The concentrations of zinc nitrate and HMT are well adjusted to show the possibility of the new route for the patterning of the ZnO nanorods. Furthermore, the nanorods pattern was characterized by X-ray diffraction and photoluminescence and the performance of field emission property from ZnO nanorod patterns was investigated. The ZnO nanorods pattern with a good alignment also shows a good field enhancement behavior with a high value of the field enhancement factor.     

P3HT/CdS/TiO2/ZnO一维有序核壳式纳米棒阵列的构制及其在杂化太阳电池中的应用研究

采用恒电位法在铟锡氧化物导电玻璃(ITO)上制备了高度有序一维ZnO纳米棒阵列,将ZnO纳米棒阵列在TiO2溶胶中采用提拉法制备出了一维TiO2/ZnO核壳式纳米棒阵列.在一维TiO2/ZnO核壳式纳米棒阵列上电沉积CdS纳米晶得到一维CdS/TiO2/ZnO核壳式纳米棒阵列,然后在一维CdS/TiO2/ZnO核壳式纳米棒阵列上电沉积聚3-己基噻吩(P3HT)薄膜得到P3HT/CdS/TiO2/ZnO核壳式纳米结构薄膜.以该纳米结构薄膜电极为光阳极制备出新型纳米结构杂化太阳电池,研究了该类电池的光电转换性能,初步探讨了该类电池的工作机理.     

Influence of different substrates on ZnO nanorod arrays properties

Zinc Oxide (ZnO) nanorod arrays were grown on different substrates by hydrothermal method. The crystallinity of ZnO nanorod was regularly investigated by X-ray diffraction (XRD). Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to examine morphology of the ZnO nanorods. The results indicate that the nanorods grow along [002] orientation. SEM and TEM images and XRD patterns show that the growth of ZnO nanorods on graphene/Quartz substrate is better than the other substrates due to the number and size of the nanorods which are highly affected through the properties of ZnO seed layers and it has lower defects than the other substrates. PL spectra ZnO would have a higher concentration of oxygen vacancy.     

The effect of hydrothermal growth temperature on preparation and photoelectrochemical performance of ZnO nanorod array films

Highly oriented ZnO nanorod arrays with controlled diameter and length, narrow size distribution and high orientation consistency have been successfully prepared on ITO substrates at different growth temperatures by using a simple hydrothermal method. XRD results indicate that the nanorods are high-quality single crystals growing along [001] direction with a high consistent orientation perpendicular to the substrate. SEM images show that the nanorods have average diameters of about 30-70 nm by changing growth temperature. The thin films consisting of ZnO nanorods with controlled orientation onto ITO substrates allow a more efficient transport and collection of photogenerated electrons through a designed path. For a sandwich-type cell, the relatively high overall solar energy conversion efficiency reaches about 2.4% when the growth temperature is at 95 °C.     

化学溶液沉积法制备单分散氧化锌纳米棒阵列

在由溶胶凝胶法制备的纳米ZnO薄膜基底上, 采用化学溶液沉积法制备了单分散、高度取向的ZnO纳米棒阵列膜. 通过控制纳米ZnO薄膜的制备工艺, 可以调节氧化锌纳米棒的直径. 利用FESEM, TEM, HRTEM, SAED和XRD表征了氧化锌纳米棒阵列的形貌和晶体结构. ZnO纳米棒的室温PL谱具有很高的紫外带边发射峰, 在可见光波段无发射峰, 表明该方法制备的ZnO纳米棒晶体结构完整, 晶体中O空位的浓度很低.     

Effect of optical property of surfactant-treated TiO2 nanostructure on the performance of TiO2 photo-electrochemical cell

TiO₂ nanostructures have been treated using different kind of surfactant to modify its optical absorption and morphology. TiO₂ nanostructures were prepared via simple method on indium tin oxide (ITO) surface, namely, liquid-phase deposition technique (LPD) at 50°C. The TiO₂ nanostructures film with a thickness of about 236 nm was annealed at 400°C for 1 h in the air to enhance the interconnectivity of the particles. The dense and compact TiO₂ nanoparticle with different shape, particle size and surface morphology was used as a photovoltaic material in a photo-electrochemical cell of ITO/TiO₂/electrolyte/platinum. TiO₂ nanostructure films were treated with three different kinds of surfactants: cetyltrimethylammonium bromide (CTAB), hexamethylenetetramine (HMT) and polyvinylpyrrolidone (PVP). It was found that the film treated with HMT performed best, with a J _sc of 57.5 μA/cm². In conclusion, optical absorption, band gap and grain size of TiO₂ nanostructure influenced the performance of the cell.     

Effect of hexamethylenetetramines (HMT) surfactant concentration on the performance of TiO2 nanostructure photoelectrochemical cells

Hexamethylenetetramine (HMT) surfactant was used to modify the morphology of TiO₂ thin film nanostructure prepared by a simple technique, namely, liquid phase deposition (LPD) during its growth process. In order to obtain various surface morphologies of TiO₂ nanostructures, the concentration of HMT was varied from 10 to 100 mM. It was found that with an increase in concentration of HMT, the morphology of TiO₂ nanorod in term of its grain size decreases due to the particles agglomeration grown on the surface. The TiO₂ nanostructures with various grain sizes were utilized as photovoltaic materials in photoelectrochemical cell measurement. The highest performance of the cell in terms of the short-circuit current density, J _sc was 0.069 mA cm^?2. This result was achieved from the TiO₂ nanorod cell with the smallest grain size, 12 ± 2 nm. The J _sc of the cell increased with concentration of HMT. The cell utilizing the TiO₂ nanostructure with the smallest grain size possessed the best interfacial contact at the TiO₂/electrolyte containing iodide/triiodide redox couple. Thus, the redox reaction was optimised at this interface.     

A study on electrodeposited of ZnO/ZnS heterostructures

ZnO/ZnS heterostructures were synthesized by a two steps electrochemical deposition method. Firstly, ZnS layer was deposited from an aqueous solution containing Na₂S₂O₃ and ZnSO₄ onto indium-doped tin oxide (ITO) coating glass substrate at two deposition potentials. Then, ZnO nanostructures were deposited from an aqueous solution of Zn(NO₃) onto ZnS surface. The as-obtained samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Raman and UV-visible analysis. The results indicate that the electrodeposition of ZnS layer at ?0.9 V give the best proprieties of ZnO/ZnS heterostructures. Homogeneous and uniform surface of ZnO/ZnS heterostructure was confirmed by AFM images. The XRD patterns indicates a high crystallinity of ZnO/ZnS. A high transmittance of 65% was also noted from UV-Visible spectra and band gap energy as large as 3.6?eV was found.     

一维有序ZnO纳米棒阵列的制备和优化

以氧化铟锡透明导电膜玻璃(ITO)做载体,先在室温下采用浸渍-提拉法制备出ZnO纳米晶作为种子层,再结合低成本的水热生长法合成了一维有序的ZnO纳米棒阵列.结合X射线衍射(XRD)、扫描电子显微镜(SEM)和能量色散谱仪(EDS)表征,研究了前驱液浓度、溶胶陈化时间、种子层提拉次数、水热生长时间和次数等5种因素对ZnO纳米棒的结构及形貌的影响.研究结果表明, ZnO纳米棒阵列的长度和直径会随着前驱液的浓度和溶胶陈化时间以及水热生长时间的延长而增加.当前驱液浓度为0.5 mol·L^-1时,陈化时间为24 h,浸渍-提拉3次,水热反应3次,每次反应时间为150 min时,可得到一维有序的ZnO纳米棒阵列.