Structural,electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

SnO₂ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates at different substrate temperatures (500–800 °C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 °C are epitaxial SnO₂ films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO₂(1 0 0)||YSZ(1 0 0). The films deposited at 700 and 800 °C have mixed-phase structures of rutile and columbite SnO₂. The carrier concentration of the films is in the range from 1.15×10¹⁹ to 2.68×10¹⁹ cm⁻³, and the resistivity is from 2.48×10⁻² to 1.16×10⁻² Ω cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO₂ films is about 3.75–3.87 eV.     

Electrical, structural and optical properties of SnO2 thin films prepared by spray pyrolysis

This study investigated the effect of the substrate temperature on the structural, optical, morphological, and electrical properties of undoped SnO₂ films prepared by a spray deposition method. The films were deposited at various substrate temperatures ranging from 300-500 °C in steps of 50 °C and characterized by different optical and structural techniques. X-ray diffraction studies showed that the crystallite size and preferential growth directions of the films were dependent on the substrate temperature. These studies also indicated that the films were amorphous at 300 °C and polycrystalline at the other substrate temperatures used. Infrared and visible spectroscopic studies revealed that a strong vibration band, characteristic of the SnO₂ stretching mode, was present around 630 cm⁻¹ and that the optical transmittance in the visible region varied over the range 75-95% with substrate temperature, respectively. The films deposited at 400 °C exhibited the highest electrical conductivity property.     

Synthesis by precipitation method and investigation of SnO2 nanoparticles

In this paper the synthesis of SnO₂ nanoparticles with average particle size up to about 70 nm using SnCl₂2H₂O and NH₄OH in 1‐botanol solution by the precipitation method is reported and the inhibition of sodium dodecyl sulphate (SDS) on the SnO₂ particle growth is investigated by soaking SnO₂precursor in the SDS solution for 24 h. The as‐prepared SnO₂and SDS modified‐SnO₂ powders, then, were calcined at different temperatures and the X‐ray powder diffraction (XRD) and Fourier transform infrared spectroscopy (FT‐IR) were used to characterize the output samples. The XRD results reveal that the structure of tin‐dioxide is tetragonal rutile and the as‐prepared SnO₂ nanoparticles grow with increasing the annealing temperature, while the SDS treatment prevents the particle growth under the same condition. Furthermore, the FT‐IR results indicate the formation of tin‐hydroxyl group which are then converted into tin‐dioxide with heat treatment. Further characterization of the samples by the transmission electron microscopy (TEM) and the photoluminescence (PL) spectroscopy was carried out. The room temperature PL spectra of SnO₂exhibits broad and strong peak attributed to the surface defects such as oxygen vacancies and intensity of which decreases with the increase in particle size. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural study of undoped and (Mn, In)-doped SnO2 thin films grown by RF sputtering

Undoped and 5%(Mn, In)-doped SnO₂ thin films were deposited on Si(1 0 0) and Al₂O₃ (R-cut) by RF magnetron sputtering at different deposition power, sputtering gas mixture and substrate temperature. X-ray reflectivity was used to determine the films thickness (10–130 nm) and roughness (～1 nm). The combination of X-ray diffraction and Mössbauer techniques evidenced the presence of Sn⁴⁺ in an amorphous environment, for as-grown films obtained at low power and temperature, and the formation of crystalline SnO₂ for annealed films. As the deposition power, substrate temperature or O₂ proportion are increased, SnO₂ nanocrystals are formed. Epitaxial SnO₂ films are obtained on Al₂O₃ at 550 °C. The amorphous films are quite uniform but a more columnar growth is detected for increasing deposition power. No secondary phases or segregation of dopants were detected.     

Development of porous silicon matrix and characteristics of porous silicon/tin oxide structures

Porous silicon (PSi) was formed at different current densities in the range of 5-60 mA/cm² by electrochemical anodized etching in HF for different durations in the range of 10-30 min. Above this PSi structure, SnO₂ films were deposited by the spin coating technique. The PSi has been characterized by X-ray diffraction studies. Peaks pertaining to PSi along with those corresponding to SnO₂ are observed. Atomic force microscopic studies indicate that very fine needle like silicon nanostructures are observed which is the result of the best PSi structure formed at 30 mA/cm². For the SnO₂ covered PSi structures, larger grains are observed with uniform coverage. The PSi samples prepared at current densities above and below 30 mA/cm² show PL spectra with asymmetric and overlapped peaks. The PL profile of thin SnO₂ film coated on PSi shows a peak at 633 nm and a small hump at about 660 nm.     

Epitaxial growth of tin oxide film on TiO2(1 1 0) using molecular beam epitaxy

Growth of tin oxide thin films using molecular beam epitaxy in a pyrolyzed nitrogen dioxide atmosphere on a titanium dioxide (1 1 0) substrate was investigated using X-ray photoelectron spectroscopy (XPS), electron diffraction, and atomic force microscopy (AFM). Properties of deposited films were studied for their dependence on substrate temperature and oxidation gas pressure. Analyses using XPS data revealed that tin atoms were fully oxidized to Sn⁴⁺ and SnO₂ films were grown epitaxially in deposition conditions of substrate temperatures of 627 K or higher and NO₂ pressure greater than 3×10⁻³ Pa. At a substrate temperature of 773 K, a smooth surface with atomic steps was visible in the SnO₂ films, but above or below this temperature, fine grains with crystal facets or porous structures appeared. At pressures of 8×10⁻⁴ to 3×10⁻⁴ Pa, the randomly oriented SnO phase was dominantly grown. Further decreasing the pressure, the Sn metal phase, which was epitaxially crystallized at less than 500 K, was also grown.     

Epitaxial Growth of α-Mercuric Iodide

Mercuric iodide has been grown for the first time heteroepitaxially on a substrate. α-HgI₂ is deposited as a single crystalline layer which is azimuthally completely oriented. The orientation of the grown layer has been confirmed with texture X-ray diffractometry, reflection powder diffractometry and Atomic Force Microscopy.     

Effect of temperature on dielectric properties of SnO2/Sb2O3 mixed thin films

Thin films of various thicknesses in the MIM structure have been prepared from the powder of SnO₂/Sb₂O₃ mixed sample by the thermal evaporation technique in a vacuum of 10⁻⁵ Torr. Dielectric properties of SnO₂/Sb₂O₃ mixed thin films have been studied with temperature starting from LNT to RT and above RT and frequency ranging from 100 Hz to 16 kHz. The activation energy for the migration of charge carriers in SnO₂/Sb₂O₃ mixed thin films has been calculated and it is found to be 0.23 eV. The results thus obtained on dielectric properties of SnO₂/Sb₂O₃ mixed thin films are presented and discussed.     

Studies on optical properties of polycrystalline SnO2:Sb thin films prepared using SnCl2 precursor

Optical properties of spray deposited antimony (Sb) doped tin oxide (SnO₂) thin films, prepared from SnCl₂ precursor, have been studied as a function of antimony doping concentration. The doping concentration was varied from 0‐4 wt.% of Sb. All the films were deposited on microscope glass slides at the optimized substrate temperature of 400 °C. The films are polycrystalline in nature with tetragonal crystal structure. The doped films are degenerate and n‐type conducting. The sheet resistance of tin oxide films was found to decrease from 38.22 Ω/□ for undoped films to 2.17 Ω/□ for antimony doped films. The lowest sheet resistance was achieved for 2 wt.% of Sb doping. To the best of our knowledge, this sheet resistance value is the lowest reported so far, for Sb doped films prepared from SnCl₂ precursor. The transmittance and reflectance spectra for the as‐deposited films were recorded in the wavelength range of 300 to 2500 nm. The transmittance of the films was observed to increase from 42 % to 55 % (at 800 nm) on initial addition of Sb and then it is decreased for higher level of antimony doping. This paper investigates the variation of optical and electrical properties of the as‐deposited films with Sb doping. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and humidity sensing properties of SnO2 zigzag belts

A novel method was developed for synthesizing ultralong SnO₂ zigzag belts with the assistance of CuO powder. The crystalline structure and morphology of SnO₂ zigzag belts were characterized using x‐ray diffraction, scanning electron microscopy and transmission electron microscopy. The growth mechanism of the ultralong SnO₂ zigzag belts and the catalytic behavior of the copper were discussed. The humidity sensor based on as‐synthesized product shows high sensitivity and fast response time due to unique structure of the SnO₂ zigzag belts with large surface‐to‐volume ratio. It can be found that the resistance of the SnO₂ materials decreases obviously with increasing relative humidity (RH) at room temperature (26 °C). The results demonstrate that these SnO₂ nanostructures are potential to be used as effective and high performance humidity sensors. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis of Fe-doped nanosized SnO2 powders by chemical co-precipitation method

Fe-doped nanosized SnO₂ powders were prepared by chemical co-precipitation technique using SnCl₄ and FeCl₃ as starting materials and water as a carrier. Experimental results show that the grain size of Fe-doped SnO₂ crystallites is smaller than 5 nm, and the particle size is smaller than 15 nm. When the calcination temperature is below 650 °C, the SnO₂ crystal has tetragonal lattice structure. At higher temperature the particles become a two-phase mixture of tetragonal SnO₂ and hexagonal Fe₂O₃ crystallites. Fe doping can obviously prevent the growth of nanosized SnO₂ crystallites, and a higher Fe-doping concentration is more effective to prevent the growth of nanosized SnO₂ particles when the calcination temperature is below 550 °C.     

Nanocrystalline transparent SnO2‐ZnO films fabricated at lower substrate temperature using a low‐cost and simplified spray technique

Nanocrystalline and transparent conducting SnO₂‐ ZnO films were fabricated by employing an inexpensive, simplified spray technique using a perfume atomizer at relatively low substrate temperature (360±5 °C) compared with conventional spray method. The structural studies reveal that the SnO₂‐ZnO films are polycrystalline in nature with preferential orientation along the (101) plane. The dislocation density is very low (1.48×10¹⁵lines/m²), indicating the good crystallinity of the films. The crystallite size of the films was found to be in the range of 26–34 nm. The optical transmittance in the visible range and the optical band gap are 85% and 3.6 eV respectively. The sheet resistance increases from 8.74 kΩ/□ to 32.4 kΩ/□ as the zinc concentration increases from 0 to 40 at.%. The films were found to have desirable figure of merit (1.63×10^–2 (Ω/□)^–1), low temperature coefficient of resistance (–1.191/K) and good thermal stability. This simplified spray technique may be considered as a promising alternative to conventional spray for the massive production of economic SnO₂ ‐ ZnO films for solar cells, sensors and opto‐electronic applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural peculiarities, and electrical and optical properties of 70TeO2·30PbCl2 glasses doped with Pr, prepared in Pt or Au crucibles

The influence of crucibles (Au or Pt) on the structure, electrical, dielectric and optical properties of 70TeO₂·30PbCl₂ glasses doped with Pr³⁺ added as a metal, chloride, or oxide, in concentrations of 500–1500 wt-ppm, is reported. The dc conductivity of ‘pure’ glasses prepared in Au crucibles is two orders of magnitude higher than that of those prepared in Pt crucibles. Upon doping, the dc conductivity of glasses prepared in Pt and Au crucibles increases or decreases, respectively. The static relative permittivity is equal to 33 ± 2. In the range of 640–700 nm, six photoluminescence (PL) peaks were observed, at 641.5, 647.1, 652.4, 660.8, 662.9, and 664.5 nm. In the range of 200–1200 cm⁻¹, seven Raman scattering (RS) peaks were observed at 184, 217, 321, 468, 654, 735 cm⁻¹, and a small peak at 650 cm⁻¹. Both spectra were deconvoluted using symmetrical Gaussian functions. Relative intensities of PL and RS bands depend on the concentration and chemical form of Pr³⁺ and on the material of the crucible. However, positions of these bands are independent of these conditions.     

Novel electrospun SnO2@carbon nanofibers as high performance anodes for lithium‐ion batteries

SnO₂@carbon (SnO₂@C) nanofibers (NFs) have been prepared by electrospinning method and evaluated as anodes in lithium‐ion battery half cells. XRD were carried out to provide further information about the structure of the as‐prepared NFs, and all the peaks can be readily indexed to the rutile phase SnO₂ (JCPDS No. 41–1445). Electrochemical characterization by galvanostatic charge‐discharge tests shows that the NF anodes have first discharge capacities of 1375.5 mA h g⁻¹ at 80 mA g⁻¹current density. This excellent Li‐ion storage capability of SnO₂ NFs is probably resulting from protection of amorphous carbon and the synergy arising from that the ultrafine SnO₂ particles embedded in the carbon nanofiber (CNF) matrix: the nanometer‐sized SnO₂@C NFs can provide not only negligible diffusion times of ions thus faster phase transitions but also enough space to buffer the volume changes during the lithium insertion and extraction reactions. The highly dispersed NFs are expected to be applied as attractive anodes for lithium‐ion batteries.     

Solvothermal controlled growth of Zn-doped SnO2 branched nanorod clusters

Branched Zn-doped SnO₂ nanorod clusters with tunable size and aspect ratios were prepared by a facile solvothermal process. The introduction of a small quantity of Zn²⁺ proved to play an important role in directing the anisotropic growth of SnO₂ nanocrystals. The as-synthesized products exhibit tetragonal rutile structure and many lattice defects exist in the products. The possible growth mechanism has been proposed. These Zn-doped SnO₂ nanorods exhibited unique Raman spectrum in contrast with the undoped SnO₂ nanostructures. These Zn-doped SnO₂ nanorods showed good sensitivities to ethanol gas, acetone gas, and benzene gas.     

Bulk-quantity SnO2 nanorods synthesized from simple calcining process based on annealing precursor powders

Tin dioxide (SnO₂) nanorods have been successfully synthesized in bulk quantity by a calcining process based on annealing precursor powders in which sodium chloride, sodium carbonate, and stannic chloride were homogeneously mixed. Transmission electron microscopy shows that the as-prepared nanorods are structurally perfect and uniform, with widths of 10–25 nm, and lengths of several hundreds nanometers to a few micrometers. X-ray diffraction and energy-dispersive X-ray spectroscopy analysis indicate that the as-prepared nanorods have the same crystal structure and chemical composition found in the tetragonal rutile form of SnO₂. Selected area electron diffraction and high-resolution transmission electron microscopy reveal that the as-prepared nanorods grow along the [1 1 0] crystal direction. We found that the calcined temperature has a strong influence on the size and morphology of SnO₂ nanorods. The growth process of SnO₂ nanorods is suggested to follow an Ostwald ripening mechanism. Our findings indicate that other nanorods or nanowires may be manipulated by using this technique, and might provide insight into the new opportunities to control materials fabrication.     

Spray pyrolysis deposition and characterization of highly (100) oriented magnesium oxide thin films

Transparent dielectric thin films of MgO has been deposited on quartz substrates at different temperatures between 400 and 600°C by a pneumatic spray pyrolysis technique using Mg(CH₃COO)₂·4H₂O as a single molecular precursor. The thermal behavior of the precursor magnesium acetate is described in the results of thermogravimetry analysis (TGA) and differential thermal analysis (DTA). The prepared films are reproducible, adherent to the substrate, pinhole free and uniform. Amongst the different spray process parameters, the substrate temperature effect has been optimized for obtaining single crystalline and transparent MgO thin films. The films crystallize in a cubic structure and X‐ray diffraction measurements have shown that the polycrystalline MgO films prepared at 500°C with (100) and (110) orientations are changed to (100) preferred orientation at 600°C. The MgO phase formation was also confirmed with the recorded Fourier Transform Infrared (FTIR) results. The films deposited at 600°C exhibited highest optical transmittivity (>80%) and the direct band gap energy was found to vary from 4.50 to 5.25 eV with a rise in substrate temperature from 500 to 600°C. The measured sheet resistance and the resistivity of the film prepared at 600°C were respectively 10¹³Ω/□ and 2.06x10⁷Ω cm. The surface morphology of the prepared MgO thin films was examined by atomic force microscopy. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural and optical properties of TiO2:SnO2 thin films prepared by sol gel method

ABSTRACT

TiO₂:SnO₂ thin films were deposited on glass substrates, by using sol gel spin coating method with different ratio (3%, 5% and 7%) at 3200 rpm, to study their effect on different properties of TiO₂: SnO₂ thin films. The structural and optical properties of films have studied for different ratio. These deposited films have been characterized by various methods such as X-Ray Diffraction (XRD), Ultra Visible spectroscopy. The (XRD) can be used to identify crystal structure of as deposited films. The Transmission spectra have shown the transparent and opaque parts in the visible and UV wavelengths.     

Phase separation in highly photosensitive tin-codoped silica optical fibers and fiber preforms exposed to UV radiation

Sn-doped silicate fibers exhibit extremely high photosensitivity when exposed to 248 nm KrF excimer laser. Electron micrograph probing has shown that nanoscale phase separation occurs in fibers and fiber preforms after UV exposure. This phenomenon has been observed only in SnO₂-doped germanosilicate and phosphosilicate fibers and fiber preforms when the SnO₂ concentration is high. At low SnO₂ concentrations no phase separation has been observed. SnO₂ codoped glasses are the first optical fibers to exhibit phase separation.     

Magneto-optical Kerr effect in glass/Cu/CoFeSiB/SnO2 thin films

We report on the Kerr signal enhancement as a result of the capping effect of SnO₂ on the CoFeSiB amorphous layer. The magnetic layer was deposited by pulsed laser deposition method on Cu buffer layer and was capped by SnO₂ with different thicknesses. The magnetic behavior of the samples was investigated by the Kerr effect. As the SnO₂ thickness increased up to about 70 nm, the Kerr signal increased and then reduced. The results were analyzed using the formalism based on the matrix method.