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1.
Thermal treatment in UHV of clean V2O5 single crystals results in homogeneous oxygen loss, involving a rate-limiting surface reaction. Depending upon the pretreatment, aircleaved samples transform topotactically into V6O13, or into what we call a phase Q of probable composition V4O9 or V6O13.5. Low energy electron bombardment of clean UHV-cleaved V2O5(010) surfaces produces the transition V2O5 → V6O13 at room temperature. This effect is attributed to electron beam stimulated reactions. The influence on the transition of carbon-containing impurities is discussed. The nucleation of V6O13 on V2O5 is explained by a model based on a surface reaction, the rate of which is enhanced by the interaction with contaminating molecules and low energy electron bombardment. The presence of shear planes at the boundary between V2O5 and the V6O13 nuclei locally enhances the oxygen loss rate and allows the V6O13 nuclei to grow into the bulk.The enhanced mobility of the oxygen at these boundaries is thought to influence favorably the oxidation-regeneration rate of the V2O5-catalyst.  相似文献   

2.
Bulk d.c. conductivities of the electronically conducting transition metal oxide glasses in the system xV2O550B2O3(50?x)TeO2 were measured at different temperatures in the range 310–623 K. The dependence of conductivity on composition is explained on the basis of the role of TeO2 as a modifier or impurity. The observed kink in the log σ vs 1/T characteristic of the glasses is interpreted as being due to switching over of the conduction mechanism from one type to the other. The activation energies are fitted in a linear relation of the type Eg = A ? BP, where A and B are constants and P, the composition parameter. Comparing the results obtained with those of previous workers in the V2O5P2O5 and V2O5B2O3 systems, a physical analysis is presented.  相似文献   

3.
The results of a study of the insulator-metal phase transition in V3O5 occuring at T = 450 K are presented. Conductivity, thermopower, magnetic, structural and optical data are reported. On a basis of the data obtained we conclude that the high-temperature phase is a poor metal with strong electron correlations and localized magnetic moments. The metal-non-metal transition is presumably driven by the spatial ordering of V3+ and V4+ ions.  相似文献   

4.
Lead vanadate glasses of the system 5Li2O−(45−x) PbO−(50+x) V2O5, with x=0, 5, 10, and 15 mol% have been prepared and studied by differential scanning calorimetry (DSC). The crystallization kinetics of the glasses were investigated under non-isothermal conditions applying the formal theory of transformations for heterogeneous nucleation to the experimental data obtained by DSC using continuous-heating techniques. In addition, from dependence of the glass-transition temperature (Tg) on the heating rate, the activation energy for the glass transition was derived. Similarly the activation energy of the crystallization process was determined and the crystallization mechanism was characterized. The results reveal the increase of the activation energy for glass transition which was attributed to the increase in the rigidity, the cross-link density and the packing density of these glasses. The phases into which the glass crystallizes have been identified by X-ray diffraction. Diffractograms of the transformed material indicate the presence of microcrystallites of Li0.30V2O5, Li0.67O5V2, LiV6O15, Li4O4Pb, and O7Pb2V2 in a remaining amorphous matrix.  相似文献   

5.
Effects of epitaxial stress on the metal-insulator transition of V2O3 have been studied for in the form of epitaxial thin films grown on α-Al2O3 (0001) and LiTaO3 (0001) substrates. A metallic phase is stabilized down to 2 K in the V2O3 thin film on α-Al2O3 (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature TMI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO3 (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and TMI in V2O3. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.  相似文献   

6.
V3O7·H2O nanobelts were prepared by a hydrothermal method at 190 °C using V2O5·nH2O gel and H2C2O4·2H2O as starting agents. The obtained nanobelts have diameters ranging from 40 to 70 nm with lengths up to several micrometers. Measurements of the static magnetic susceptibility and the specific heat show a discontinuous phase transition at around T=145 K, which separates two regions of paramagnetic behavior.  相似文献   

7.
Using the Mössbauer effect, we analyse the behaviour of (V2O5)1?x(Fe2O3)x solid solutions with the starting composition x = 1?15 mol.% Fe2O3. The number of iron ions dissolved in V2O5 lattice depends on the initial composition x of Fe2O3 and tends to a maximum value corresponding to 4 mol.% Fe2O3. The composition dependence of the quadrupole splitting and isomer shifts is presented.  相似文献   

8.
The lattice parameters of Ti2O3 and (Ti0.98V0.02)2O3 have been measured as a function of temperature (24–670°C for Ti2O3 and 24–440°C for V-doped Ti2O3) from single crystal X-ray data. The high temperatures were attained by blowing hot argon directly on the crystal mounted on an automatic Philips diffractometer. This experimental set-up gives standard deviations which are at least 10 times better than those of the previous measurements and allows to keep Ti2O3 as such well above the transition. The variations of a, c, ca (hexagonal axes) for pure Ti2O3 are in agreement with the previous results. On the contrary we did not observe any transition in the unit cell volume. The V-doping seems to attenuate the transition which is visible only on the a vs T curve  相似文献   

9.
We apply density functional theory and the augmented spherical wave method to analyze the electronic structure of V2O3 in the vicinity of an interface to Al2O3. The interface is modeled by a heterostructure setup of alternating vanadate and aluminate slabs. We focus on the possible modifications of the V2O3 electronic states in this geometry, induced by the presence of the aluminate layers. In particular, we find that the tendency of the V 3d states to localize is enhanced and may even cause a metal-insulator transition.  相似文献   

10.
The enthalpies of formation of a series of high and low temperature phases in the ternary oxide system LixV2O5 have been determined by solution calorimetry. Samples of the former, α-Li0.04V2O5, β-Li0.30V2O5, β'-Li0.48V2O5 and γ-LiV2O5, were prepared by solid state reaction at 650°C. The ambient temperature materials Li0.1V2O5(I), Li0.45V2O5(II) and Li1.03V2O5(III) were prepared by n-butyl lithiation in hexane. The thermochemistries of the two classes of material were examined and related to structural features and to the observed behaviour of V2O5 as a battery cathode material in lithium cells.  相似文献   

11.
xV2O5xCeO2–(30−x)PbO–(70−x) B2O3 glasses are synthesized by using the melt quench technique. The number of studies such as XRD, density, molar volume, optical band gap, refractive index and FTIR spectroscopy are employed to characterize the glasses. The band gap decreases from 2.20 to 1.78 eV and density increases from 3.49 to 4.25 g/cm3. FTIR spectroscopy reveals that incorporation of V2O5 in glass network helps to convert the structural units of [BO3] into [BO4]. At higher concentration of vanadium, VO vibration of [VO5] structural units and V–O–V vibration are present. The bond ionicity of glasses increases with incorporation of V2O5 contents.  相似文献   

12.
The resistance R, the superconducting transition temperature Tc and the energy gap Δ(T) have been measured on the BaPb0.7Bi0.3O3 films up to 14 kbar. We have found that up to 14 kbar: (1) pressure suppresses Tc and Δ(T) while enhances R, (2) the value of 2Δ(0)/kTc is 3.8±0.1, independent of pressure, and (3) the Δ(T)/Δ(0) varies with T/Tc in a BCS fashion but only for T/Tc<0.75 and independent of pressure. The results show that BaPb1?xBixO3 is a weak-coupling superconductor, but fail to provide information about the cause for the high Tc of the compound.  相似文献   

13.
Dielectric properties, viz. dielectric constant ε′, loss tan δ and a.c conductivity σac (over a wide range of frequency and temperature) and dielectric breakdown strength of PbO-Sb2O3-As2O3 glasses doped with V2O5 (ranging from 0 to 0.5 mol%) are studied. Analysis of these results, based on optical absorption and ESR spectra, indicates that the insulating strength of the glasses is comparatively high when the concentration of V2O5 is about 0.3 mol% in the glass matrix.  相似文献   

14.
We report the formation of homogeneous and stable V2O3 nanocrystals, directly from V2O5 thin films, at 600 °C, as observed by using in situ electron microscopy experiments. Thermally-induced reduction of V2O5 thin films in vacuum is remarkably different when compared to reduction of V2O5 single crystals and results in the formation of nanophase V2O3. Thermally grown V2O3 nanocrystals exhibit hexagon or square shape and are stable at higher temperature as well as room temperature. The formation of stable nanocrystals through the reduction process in a non-chemical environment (vacuum) could provide a basis for understanding the complex processes of vanadium oxide phase transitions and for controlling the chemical processes to produce oxide nanocrystals.  相似文献   

15.
A single phase corundum type structure was observed in V2O3 from 165 to 1100K. An anomalous behaviour of the lattice parameters of the rhombohedral unit cell was found in the high temperature region where V2O3 undergoes a broad electrical transition. The unit cell edge aR contracts above 165 K, reaching a minimum at 533 K, after which there is a sharp increase. Above 595 KaR expands continuously and then almost linearly above 775 K. The temperature dependence of the rhombohedral angle shows two distinct regions, and the volume expansion follows the variation of angle; the change of the rate of expansion coincides with the minimum of aR. The contraction of aR corresponds to a reduction in certain second-neighbor VV distances.Our results show that a gradual transition is taking place in V2O3 from an α type structure to a β type characteristic of the Cr-doped V2O3 compounds. In addition, the sharp dip of the aR curve occurs at nearly the same temperature as the peak previously observed in small angle scattering of neutrons. It is presumed that the two effects are related, and that the critical-like behaviour of aR is due to some dynamic magnetoelastic effect involving second neighbor VV interactions.  相似文献   

16.
We revisited the vanadium oxide phosphors, AVO3 (A:K, Rb, and Cs) and M3V2O8 (A:Mg and Zn) for a revaluation of possibility of these compounds for lighting applications, and the internal quantum efficiency (η) and luminescent colour properties for AVO3 (A:K, Rb, and Cs) and M3V2O8 (A:Mg, and Zn) have been presented. The AVO3 showed the broadband emission from 380 to 800 nm, and the η for the KVO3, RbVO3 and CsVO3 were 4%, 79% and 87%, respectively. The CIE colour coordinates are located at white region on the chromaticity diagram. The M3V2O8 (A:Mg and Zn) also exhibited a quite broadband emission between 410 and 900 nm, indicating yellow luminescent colour. The Zn3V2O8 showed high η value, 52%, compared to that of the Mg3V2O8 (η=6%). This enhancement of η in the Zn3V2O8 could be due to the increasing exciton diffusion assisted by the hybridizations of Zn 3d and O 2p orbitals for the valence band, and Zn 4s and Ti 3d orbitals for the conduction band.  相似文献   

17.
The formation and optical response of VOx nanoparticles embedded in amorphous aluminium oxide (Al2O3) thin films by pulsed laser deposition is studied. The thin films have been grown by alternate laser ablation of V and Al2O3 targets, which has resulted in a multilayer structure with embedded nanoparticles. The V content has been varied by changing the number of pulses on the V target. It is found that VOx nanoparticles with dimensions around 5 nm have been formed. The structural analysis shows that the vanadium nanoparticles are oxidized, although probably there is not a unique oxide phase for each sample. The films show a different optical response depending on their vanadium content. Optical switching as a function of temperature has been observed for the two films with the highest vanadium content, at transition temperatures of about −20 °C and 315 °C thus suggesting the presence of nanoparticles with compositions V4O7 and V2O5, respectively.  相似文献   

18.
Characterization of the (76V2O5-24P2O5)1−X (Li3PO5)X, where X=0.0,0.01,0.02,0.10 and 0.15, glass has been done using X-ray diffraction and differential thermal analysis (DTA). The dc conductivity of the glass samples was studied over a temperature range from 300 to 593 K. The temperature dependence of dc conductivity shows two regions. One at relatively high temperature range, above θD/2, and the other at relatively low temperature range, below θD/2. The I-V characteristics of the glasses have been studied as a function of both temperature and Li3PO4 content. The I-V characteristics exhibits threshold switching with differential negative resistance. It's found that both the threshold voltage (Vth) and threshold current (Ith) are dependent on the temperature and lithium phosphate concentration.  相似文献   

19.
The adsorption behaviors of V2O5 nanowires on binary mixed self-assembled monolayers (SAMs) were investigated with variation of the mixing ratio of two differently terminated thiolates on Au. Hydroxyl-covered V2O5 nanowires showed a preferential adsorption on amine (NH2)-terminated thiolates over methyl (CH3)-terminated ones. However, on the binary mixed SAM of NH2- and CH3-terminated thiols, the adsorption behavior did not follow a simple expectation based upon the electrostatic interaction. The total number of adsorbed V2O5 nanowires increased with the mole fraction of NH2-terminated thiolates up to χNH2∼0.5, then it decreased with further increase of χNH2. The height distribution of adsorbed nanowires showed that the relative portion of the agglomerated wires thicker than 3.5 nm to individual wires thinner than 3.5 nm increased up to χNH2∼0.75 and then it decreased with further increase of χNH2. The dispersion of molecules with polar-functional groups as well as the molecular ordering of mixed SAMs is attributed to such adsorption behaviors of V2O5 nanowires.  相似文献   

20.
Antiferromagnetic phase transition in two vanadium garnets AgCa2Co2V3O12 and AgCa2Ni2V3O12 has been found and investigated extensively. The heat capacity exhibits sharp peak due to the antiferromagnetic order with the Néel temperature TN=6.39 K for AgCa2Co2V3O12 and 7.21 K for AgCa2Ni2V3O12, respectively. The magnetic susceptibilities exhibit broad maximum, and these TN correspond to the inflection points of the magnetic susceptibility χ a little lower than T(χmax). The magnetic entropy changes from zero to 20 K per mol Co2+ and Ni2+ ions are 5.31 J K−1 mol-Co2+-ion−1 and 6.85 J K−1 mol-Ni2+-ion−1, indicating S=1/2 for Co2+ ion and S=1 for Ni2+ ion. The magnetic susceptibility of AgCa2Ni2V3O12 shows the Curie-Weiss behavior between 20 and 350 K with the effective magnetic moment μeff=3.23 μB Ni2+-ion−1 and the Weiss constant θ=−16.4 K (antiferromagnetic sign). Nevertheless, the simple Curie-Weiss law cannot be applicable for AgCa2Co2V3O12. The complex temperature dependence of magnetic susceptibility has been interpreted within the framework of Tanabe-Sugano energy diagram, which is analyzed on the basis of crystalline electric field. The ground state is the spin doublet state 2E(t26e) and the first excited state is spin quartet state 4T1(t25e2) which locates extremely close to the ground state. The low spin state S=1/2 for Co2+ ion is verified experimentally at least below 20 K which is in agreement with the result of the heat capacity.  相似文献   

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