正常金属-绝缘层-无序层-s波超导结中的微分电导与散粒噪声

考虑到无序层中的体杂质散射以及绝缘界面层的粗糙散射,运用Bogoliubov-de Genner(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,计算正常金属－绝缘层－无序层－s波超导隧道结系统的微分电导,平均电流和散粒噪声功率,研究表明,无序层中的杂质散射和粗糙界面散射都能抑制系统的微分电导,平均电流和散粒噪声功率。     

金属-绝缘层-铁磁/超导结的隧道谱与散粒噪声

通过求解Bogoliubov-de Gennes(BdG)方程,利用推广的Blonder-Tinkham-Klapwijk(BTK)的理论,计算了金属-绝缘层-铁磁／超导态(N／L／FS)结的微分电导、平均电流和散粒噪声功率．研究表明：铁磁超导态中的磁交换能能使微分电导峰产生Zeeman劈裂,劈裂峰的能量问隔为2Eh,结界面势垒散射抑制隧道结的微分电导、平均电流和散粒噪声功率．     

铁磁-绝缘层-铁磁-d波超导结中的量子干涉效应对微分电导与散粒噪声的影响

通过求解BogoliubovedeGennes(BdG)方程,利用推广的BlonderTinkhamKlapwijk(BTK)理论,计算铁磁绝缘层铁磁d波超导结中的微分电导、平均电流和散粒噪声功率.研究表明,系统的微分电导和散粒噪声与平均电流的比值都随中间铁磁层厚度作周期性振荡,振荡的幅度随绝缘层势垒增高而变大,随铁磁层中磁交换劈裂的增强而变小. 关键词： 微分电导 散粒噪声 磁交换劈裂     

正常金属-铁磁绝缘层-dx2-y2+idxy混合波超导结中的磁散射对隧道谱的影响

在正常金属铁磁绝缘层dx2-y2 idxy混合波超导隧道结中,考虑到铁磁绝缘层的磁散射和界面的粗糙散射效应,运用BogoliubovdeGennes(BdG)方程和BlonderTinkhamKlapwijk(BTK)理论,计算了隧道结中的准粒子传输系数和微分电导.研究表明:(1)磁散射和界面粗糙散射均可以压低电导峰,其中磁散射能使电导峰滑移,而粗糙界面散射却能阻止这种滑移,且两散射的共同作用可抑制由混合波两序参数的幅值比不同所导致的电导峰滑移;(2)随铁磁层离超导表面距离的增加,隧道谱在零偏压处由凹陷变成了零偏压电导峰,继而又演化为凹陷中的中心峰;(3)当铁磁层离开超导表面有若干相干长度时,隧道谱中将呈现一些子能级谐振峰.     

铁磁-p波超导结中的自旋极化隧道谱与散粒噪声

考虑到界面的势垒散射和铁磁层中的磁交换作用，依照Sr2RuO4超导体具有自旋三重配对态的p波对称结构，研究铁磁-p波超导结中的自旋极化隧道谱与散粒噪声，研究表明：1.对于幺正配对态，随着铁磁层中磁交换劈裂增强，隧道谱与散粒噪声都减少；2.对于非幺正配对态，隧道谱与散粒噪声都依赖于铁磁层的磁化轴方向，当磁化轴平行于非幺正配对态的自旋轴时，在低偏压下磁交换作用能使隧谱与散粒噪声增强，而当磁化轴反平行于自旋转轴时，其结果相反。     

双层结构铁磁-超导隧道结的直流Josephson电流

通过求解Bogoliubov_de Gennes(BdG)方程得到铁磁超导共存态(FS)的自洽方程，在考虑结 界面的粗糙情形下，由推广的Furusaki_Tsukada(FT)的电流公式计算了铁磁超导态/ 绝缘层 / 铁磁超导态(FS/I/FS)结的直流Josephson电流，讨论了FS/I/FS结的直流Josephson临界 电流随磁交换能、温度的变化情况.研究表明：当结界面势垒散射强度和粗糙势垒散射强度 比较弱时磁交换能总是抑制FS/I/FS结的直流Josephson临界电流，而当结左右两边FS中铁 关键词： FS/I/FS超导隧道结 铁磁超导共存态 直流Josephson电流 粗糙势垒散射     

半导体/磁性d波超导隧道结中的散粒噪声

考虑到磁性d波超导体中的能隙与磁交换能的依赖关系,通过求解Bogoliubov-de Gennes(BdG)方程,利用Blonder-Tinkham-Klapwijk理论方法研究半导体/磁性d波超导隧道结中的散粒噪声.计算结果表明:磁性d波超导结中的磁交换能h0可导致散粒噪声在零偏压处的双峰和能隙处的峰出现劈裂,劈裂的宽度为2h0;磁交换能h0同时对散粒噪声及噪声功率与平均电流的比值有抑制作用.     

正常金属-f波超导结中的隧道谱与散粒噪声

很多实验证实 Sr2 Ru O4 超导体具有自旋三重态 ,其序参数存有结点的 f波对称结构。我们考虑到粗糙的界面势垒散射 ,利用 f波超导模型 ,研究正常金属 - Sr2 Ru O4 超导结中的隧道谱与散粒噪声。所得结果既不同于传统的 s波超导 ,亦不同于具有 d波对称结构的高 Tc铜氧化物超导体。     

正常金属-铁磁绝缘层-d波超导结中的磁散射对量子输运的影响

在正常金属-铁磁绝缘层-d波超导隧道结中,考虑到铁磁绝缘层的粗糙界面散射和磁散射效应,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-klapwijk(BTk)理论模型,计算隧道结中的准粒子传输系数和微分电导.计算表明：1)粗糙界面散射和磁散射都能压低零偏压电导峰,其中磁散射能使零偏压峰滑移,而粗糙界面却能阻止零偏压峰的滑移,且随着两种散射强度的逐渐增大,又能使零偏压电导峰渐渐变为凹陷;(2)当铁磁层离开超导表面有若干相干长度时,隧道谱中将呈现一些子能隙谐振峰. 关键词：     

粗糙界面对铁磁半导体/d-波超导隧道结隧道谱的影响

考虑到铁磁半导体和d-波超导体中空穴的有效质量和费米速度错配,运用推广了的Blonder-Tinkham-Klapwijk(BTK)理论模型,研究了粗糙界面散射对铁磁半导体/d-波超导(FS/DS)隧道结的隧道谱的影响.研究表明:(1)铁磁半导体和d-波超导体中空穴的有效质量和费米速度错配对系统的微分电导影响显著;(2)粗糙界面散射对Andreev反射有抑制作用.     

Spin-Polarized Tunneling Spectroscopy and Shot Noise in Ferromagnet/f-Wave Superconductor Junctions

The tunneling spectroscopy and shot noise in ferromagnet/insulator/triplet-superconductor (FM/I/triplet-SC) structures are studied by taking into account the roughness interfacial barrier and exchange splitting in the FM. For the triplet-SC of Sr₂RuO₄, we consider two-dimensional f-wave order parameter symmetries having nodes within the RuO₂ plane, which reasonably describe both thermodynamic and thermal conductivity data. It is shown that the ferromagnetic exchange splitting gives rise to a decrease in the differential conductance, the average current, and the shot noise power, while the noise power-to-current ratio is increased; the interface roughness is found to lead to a decrease in the differential conductance and the average current, and an increase in the noise power-to-current ratio.     

Annealing effects on mobility-limiting mechanisms in modulation doping Si/Si0.8Ge0.2heterostructures

The changes in the mobility and carrier concentration in annealed modulation doping Si/Si_0.8Ge_0.2heterostructures with various channel thicknesses have been studied and mobility-limiting mechanisms were clarified. The dominant scattering mechanism was found to change to scattering due to uniformally doped impurities from the remote impurity scattering after annealing in samples with wider channel thickness. The thermal diffusion of both Sb and Ge caused the increase of impurity scattering and the reduction of the channel width. The channel reduction made the sample more sensitive to interface roughness scattering and gave rise to carrier localization in the extreme case. In the samples with intermediate channel width, co-operation between interface roughness and impurity scattering was observed after annealing.     

Anisotropic Interface Roughness Scattering in a Lateral Superlattice

A novel interface roughness due to the perturbation of the periodic interface structure is studied theoretically for a lateral superlattice realized by an interface corrugated quantum well. It is found by numerical simulation that the correlation function for interface roughness can be well modeled by a sinusoidal function with an exponential decay in the direction of corrugation. Such a feature makes the correlation function far from a Gaussian function which is extensively used as a theoretical approximation of the correlation function for interface roughness. With such a correlation function, the influence of interface roughness scattering on electronic transport in the lateral superlattice is investigated. Consequently, it gives rise to a high anisotropy of electronic transport both in the absence and presence of a magnetic field, by which the relevant experiments can be well explained.     

Anisotropic Interface Roughness Scattering in a Lateral Superlattice

A novel interface roughness due to the perturbation of the periodic interface structure is studied theoretically for a lateral superlattice realized by an interface corrugated quantum well. It is found by numerical simulation that the correlation function for interface roughness can be well modeled by a sinusoidal function with an exponential decay in the direction of corrugation. Such a feature makes the correlation function far from a Gaussian function which is extensively used as a theoretical approximation of the correlation function for interface roughness. With such a correlation function, the influence of interface roughness scattering on electronic transport in the lateral superlattice is investigated.Consequently, it gives rise to a high anisotropy of electronic transport both in the absence and presence of a magnetic field, by which the relevant experiments can be well explained.     

Fractional shot noise in the kondo regime

Transport through quantum dots in the Kondo regime obeys an effective low-temperature theory in terms of weakly interacting quasiparticles. Despite the weakness of the interaction, we find that the backscattering current and hence the shot noise are dominated by two-quasiparticle scattering. We show that the simultaneous presence of one- and two-quasiparticle scattering results in a universal average charge 5/3e as measured by shot-noise experiments. An experimental verification of our prediction would constitute a most stringent test of the low-energy theory of the Kondo effect.     

Investigation of interface roughness cross-correlation properties of optical thin films from total scattering losses

The interface roughness and interface roughness cross-correlation properties affect the scattering losses of high-quality optical thin films. In this paper, the theoretical models of light scattering induced by surface and interface roughness of optical thin films are concisely presented. Furthermore, influence of interface roughness cross-correlation properties to light scattering is analyzed by total scattering losses. Moreover, single-layer TiO₂ thin film thickness, substrate roughness of K9 glass and ion beam assisted deposition (IBAD) technique effect on interface roughness cross-correlation properties are studied by experiments, respectively. A 17-layer dielectric quarter-wave high reflection multilayer is analyzed by total scattering losses. The results show that the interface roughness cross-correlation properties depend on TiO₂ thin film thickness, substrate roughness and deposition technique. The interface roughness cross-correlation properties decrease with the increase of film thickness or the decrease of substrates roughness. Furthermore, ion beam assisted deposition technique can increase the interface roughness cross-correlation properties of optical thin films. The measured total scattering losses of 17-layer dielectric quarter-wave high reflection multilayer deposited with IBAD indicate that completely correlated interface model can be observed, when substrate roughness is about 2.84 nm.     

Transport studies of MBE-grown InAs/GaSb superlattices

We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as μ ∝ L^5.3, which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 Å. Next, we show that the in-plane carrier mobility in InAs/GaSb superlattices is inversely proportional to carrier density in n- and p-type samples, the result of screened interface roughness scattering.     

dc Josephson Effect in s-Wave Superconductor/Ferromagnet Insulator/p-Wave Superconductor Junctions

The Josephson currents in s-wave superconductor/ferromagnet insulator/p-wave superconductor（s/FI/p） junctions are calculated as a function of temperature and the phase taking into account the roughness scattering effect at interface. The phase dependence of the Josephson current I （φ） between s-wave and px-wave superconductor is predicted to be sin（2φ）. The ferromagnet scattering effect, the barrier strength, and the roughness strength at interface suppress the dc currents in s/FI/p junction.     

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through a threedimensional(3D) full band Monte Carlo simulator with quantum correction.Several scattering mechanisms,such as the acoustic and optical phonon scattering,the ionized impurity scattering,the impact ionization scattering and the surface roughness scattering are considered in our simulator.The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work.Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.     

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Interface roughness strongly influences the performance of germanium metal--organic--semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50~nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The $82\%$ and $96\%$ drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.