Formation of cavitation-induced pits on target surface in liquid-phase laser ablation

It is well known that a crater is formed on the target surface by the irradiation of intense laser pulses in laser ablation. In this work, we report that additional pits are formed on the bottom surface of the ablation crater due to the collapse of a cavitation bubble in liquid-phase laser ablation. We observed the formation of several cavitation-induced pits when the fluence of the laser pulse used for ablation was approximately 5 J/cm². The number of cavitation-induced pits decreased with the laser fluence, and we observed one or two cavitation-induced pits when the laser fluence was higher than 10 J/cm². In addition, we examined the influence of the liquid temperature on the formation of cavitation-induced pits. The collapse of the cavitation bubble was not observed when the liquid temperature was close to the boiling temperature, and in this case, we found no cavitation-induced pits on the bottom surface of the ablation crater. This experimental result was discussed by considering the cavitation parameter.     

Microfabrication techniques used in Japan for VLSI and other devices

Lead films of thickness 100 Å, 250 Å. and 350 Å were vacuum deposited on AI and laser treated in air using single pulses (7 ns FWHM) from a Nd: glass laser operating in TEM₀₀ mode, at peak energy densities of 1.5-5.0 J/cm². Rutherford back-scattering of 1.8 MeV He⁺ ions was employed to determine the depth profiles of Pb in Al. Up to about 1.4 J/cm², we observe only evaporation loss of Pb and formation of Pb-rich cells on the surface. At higher energies, liquid phase diffusion of Pb is observed up to 4 J/cm², beyond which convection effects are seen. A quantitative analysis of data for 350 Å film at 3.0 J/cm² shows evidence of nonequilibrium segregation effects.     

Non-equilibrium plasma production by pulsed laser ablation of gold

A gold target has been irradiated with a Q-switched Nd:Yag laser having 1064?nm wavelength, 9?ns pulse width, 900?mJ maximum pulse energy and a maximum power density of the order of 10¹⁰?W/cm². The laser–target interaction produces a strong gold etching with production of a plasma in front of the target. The plasma contains neutrals and ions having a high charge state. Time-of-flight (TOF) measurements are presented for the analysis of the ion production and ion velocity. A cylindrical electrostatic deflection ion analyzer permits measurement of the yield of the emitted ions, their charge state and their ion energy distribution. Measurements indicate that the ion charge state reaches 6⁺ and 10⁺ at a laser fluence of 100?J/cm² and 160?J/cm², respectively. The maximum ion energy reaches about 2?keV and 8?keV at these low and high laser fluences, respectively. Experimental ion energy distributions are given as a function of the ion charge state. Obtained results indicate that electrical fields, produced in the plume, along the normal to the plane of the target surface, exist in the unstable plasma. The electrical fields induce ion acceleration away from the target with a final velocity dependent on the ion charge state. The ion velocity distributions follow a “shifted Maxwellian distribution”, which the authors have corrected for the Coulomb interactions occurring inside the plasma.     

Using IR laser radiation for backside etching of fused silica

Laser-induced backside etching of fused silica with gallium as highly absorbing liquid is demonstrated using pulsed infrared laser radiation. The influences of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography were studied and the results are compared with these of excimer laser etching. The high reflectivity of the fused silica-gallium interface at IR wavelengths results in the measured high threshold fluences for etching of about 3 J/cm² and 7 J/cm² for 18 ns and 73 ns pulses, respectively. For both pulse lengths the etch rate rises almost linearly with laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm², respectively. The etching process is almost free from incubation processes because etching with the first laser pulse and a constant etch rate were observed. The etched surfaces are well-defined with clear edges and a Gaussian-curved, smooth bottom. A roughness of about 1.5 nm rms was measured by AFM at an etch depth of 0.95 μm. The normalization of the etch rates with respect to the reflectivity and the pulse length results in similar etch rates and threshold fluence for the different pulse widths and wavelengths. It is concluded that etching is a thermal process including the laser heating, the materials melting, and the materials etching by mechanical forces. The backside etching of fused silica with IR-Nd:YAG laser can be a promising approach for the industrial usage of the backside etching of a wide range of materials. PACS 81.65.C; 81.05.J; 79.20.D; 61.80.B; 42.55.L     

Evolution of vacancy defects and dislocations in surface layers of iron as a result of pulsed electron beam treatment

Using a micro-beam of ions (PIXE, RBS), a slow positron beam, measurements of positron lifetime, TEM and SEM techniques, formation of vacancy defects and dislocations has been found in a near-surface iron layer as a result of pulsed electron beam treatment. It has been shown that as a result of the HCEB treatment regions of a low local electron density are formed, which seem to be “embryos” for craters. In spite of the crater formation and high dislocation density (exceeding 10¹⁰ cm⁻²) in a near-surface layer, we found a decrease in wear resistance to dry friction and an increase in microhardness.     

Ultrafast laser ablation of indium tin oxide thin films for organic light-emitting diode application

Ultrafast laser ablation of ITO thin film coated on the glass has been investigated as a function of laser fluence as well as the number of laser pulses. The ablation threshold of ITO thin film was found to be 0.07 J/cm² that is much lower than that of glass substrate (about 1.2–1.6 J/cm²), which leads to a selective ablation of ITO film without damage on glass substrate. The changes in the electrical resistance and morphology of ablated trench of ITO electrode were found to be strongly dependent on the processing conditions. We present the performance of organic light-emitting diodes (OLED) fabricated with ITO electrode patterned by ultrafast laser ablation.     

An investigation into the effects of high laser fluence on hydroxyapatite/calcium phosphate films deposited by pulsed laser deposition

Pulsed laser deposited mixed hydroxyapatite (HA)/calcium phosphate thin films were prepared at room temperature using KrF laser source with different laser fluence varying between 2.4 J/cm² and 29.2 J/cm². Samples deposited at 2.4 J/cm² were partially amorphous and had rough surfaces with a lot of droplets while higher laser fluences showed higher level of crytallinity and lower roughness of surfaces of obtained samples. Higher laser fluences also decreased ratio Ca/P of as-deposited samples. X-ray photoelectron spectroscopy (XPS) revealed traces of carbonate groups in obtained samples, which were removed after thermal annealing. The decomposition of HA into TCP was observed to start at about 400 °C. The formation of new crystalline phase of HA was found after annealing as well. The cracks observed on surface of sample deposited at 29.2 J/cm² after annealing indicated that the HA/ calcium phosphate films deposited at higher laser energy densities were probably more densed.     

Femtosecond laser ablation characteristics of nickel-based superalloy C263

Femtosecond laser (180 fs, 775 nm, 1 kHz) ablation characteristics of the nickel-based superalloy C263 are investigated. The single pulse ablation threshold is measured to be 0.26±0.03 J/cm² and the incubation parameter ξ=0.72±0.03 by also measuring the dependence of ablation threshold on the number of laser pulses. The ablation rate exhibits two logarithmic dependencies on fluence corresponding to ablation determined by the optical penetration depth at fluences below ∼5 J/cm² (for single pulse) and by the electron thermal diffusion length above that fluence. The central surface morphology of ablated craters (dimples) with laser fluence and number of laser pulses shows the development of several kinds of periodic structures (ripples) with different periodicities as well as the formation of resolidified material and holes at the centre of the ablated crater at high fluences. The debris produced during ablation consists of crystalline C263 oxidized nanoparticles with diameters of ∼2–20 nm (for F=9.6 J/cm²). The mechanisms involved in femtosecond laser microprocessing of the superalloy C263 as well as in the synthesis of C263 nanoparticles are elucidated and discussed in terms of the properties of the material.     

Effect of nonionic surfactant addition on Pyrex glass ablation using water-assisted CO2 laser processing

Pyrex glass etching using laser ablation is an important technology for the microfluid application to lab-on-a-chip devices but suffers from the formation of surface crack. In this article, the addition of nonionic surfactant to water for glass ablation using water-assisted CO₂ laser processing (WACLAP) has been investigated to enhance ablation rate and to eliminate conventional surface defects of cracks in air. WACLAP for Pyrex glass ablation can reduce thermal-stress-induced crack with water cooling and hydrophilic nonionic surfactant to water can enhance ablation performance. Compared to pure water, the 15% weight percent Lauramidopropyl Betaine surfactant solutions for WACLAP can enhance ablation rate from 13.6 to 25 μm/pass of Pyrex glass ablation at a linear laser energy density of 2.11 J/cm, i.e., 24 W power, 114 mm/s scanning speed, and obtain through-wafer etching at 3.16 J/cm for 20 passes without cracks on the surface. Effect of surfactant concentration and linear energy density on WACLAP was also examined. The possible mechanism of surfactant-enhanced phenomenon was discussed by the Newton’s law of viscosity of surfactant solution.     

High-quality and high-efficiency machining of glass materials by laser-induced plasma-assisted ablation using conventional nanosecond UV, visible, and infrared lasers

This paper reports the micromachining of fused quartz and Pyrex glass by laser-induced plasma-assisted ablation (LIPAA) using a conventional nanosecond laser at wavelengths 266 nm, 532 nm, and 1064 nm, respectively. High-quality surface structuring can be achieved at each of these wavelengths. The micrograting formed has periods of 14 7m at 266 nm, 20 7m at 532 nm, and 30 7m at 1064 nm, respectively. The ablation rate using a 266 nm laser is much larger than that at longer wavelengths. The ablation thresholds of laser fluence are 0.7 J/cm² for 266 nm, 1.5 J/cm² for 532 nm and 3.7 J/cm² for 1064 nm, respectively. The 532 nm and 1064 nm lasers enable hole drilling in 0.5 and 2.0-mm thick fused quartz and Pyrex glass substrates of about 0.7-0.8 mm in diameter. However, the less destructive through channel can be only formed in Pyrex glass by using a 532 nm laser.     

Backside laser etching of fused silica using liquid gallium

Laser-induced backside wet etching (LIBWE) that is regularly performed with hydrocarbon solutions is demonstrated with the liquid metal gallium as a new class of absorbers for the first time. Well-contoured square etch pits in fused silica with smooth bottoms and well-defined edges were achieved already with the first pulse from a 248 nm excimer laser. The etching is characterized by a threshold fluence of 1.3 J/cm² and a straight proportional etch rate growth with the fluence up to 8.2 J/cm². In addition, the etch depth increases linearly for onward pulsed laser irradiation and gives evidence for an only marginal incubation effect. The high fluences necessary for etching originate from the high reflection losses as well as the high thermal conductivity of the metallic absorber. The suggested etch mechanism comprises the heating of the fused silica up to or beyond the fused silica melting point by the laser heated gallium and the removing of the softened or molten fraction of the material by mechanical forces from shock waves, bubbles, high pressures, or stress fields. PACS 81.65.C; 81.05.J; 79.20.D; 61.80.B; 42.55.L     

Single- and multi-pulse formation of surface structures under static femtosecond irradiation

Femtosecond surface structure modifications are investigated under irradiation with laser pulses of 150 fs at 800 nm, on copper and silicon. We report sub-wavelength periodic structures formation (ripples) with a periodicity of 500 nm for both materials. These ripples are perpendicular to the laser polarization and can be obtained with only one pulse. The formation of these ripples corresponds to a fluence threshold of 1 J/cm² for copper and 0.15 J/cm² for silicon. We find several morphologies when more pulses are applied: larger ripples parallel to the polarization are formed with a periodicity of 1 μm and degenerate into a worm-like morphology with a higher number of pulses. In addition, walls of deep holes also show sub-wavelength and large ripples.     

The influence of the implantation temperature on the generation of dislocations in antimony-implanted and annealed silicon

We report the first observation of non-equilibrium redistribution effects during laser treatment of a binary system having equilibrium segregation coefficient, k₀, much greater than unity. Polycrystalline aluminium samples implanted with 30 keV Sb⁺ ions to a dose of 1.7 × 10¹⁷ ions/cm² were irradiated with single pulses (7 ns FWHM) from a Nd: glass laser operating in TEM₀₀ mode. The peak energy density (at the centre of the laser spot) varied from 2.0 to 5.7 J/cm². A detailed liquid phase diffusion analysis, explicitly incorporating rapid melt front motion and interfacial segregation, is performed to fit the Sb depth profiles measured with a nuclear microprobe. An effective distribution coefficient k = 1 (as compared to equilibrium value of k₀～7) is obtained in agreement with the theoretical limiting value for large melt front velocities.     

Laser damage and ablation of differently prepared CaF2(111) surfaces

Ablation thresholds and damage behavior of cleaved and polished CaF₂(111) surfaces produced by single shot irradiation with 248 nm/14 ns laser pulses have been investigated using the photoacoustic mirage technique and scanning electron microscopy. The standard polishing yields an ablation threshold of typically 20 J/cm². When surfaces are polished chemo-mechanically the threshold is raised to 43 J/cm². Polishing by diamond turning leads to intermediate values around 30 J/cm². Cleaved surfaces possess no well-defined damage threshold. The damage topography of conventionally polished surfaces shows ablation of flakes across the laser heated area with cracks along the cleavage planes. In the case of chemo-mechanical polishing only a few cracks appear. Diamond turned surfaces show small optical absorption, but cracks and ablation of tiles. The origin of such different damage behavior is discussed. Presented at the VIII-th Symposium on Surface Physics, Třešt’ Castle, Czech Republic, June 28 – July 2, 1999. This work was funded by the Deutsche Forschungsgemeinschaft, Sonderforschungsbereich 337. One of us (J.S.) acknowledges support from Deutscher Akademischer Austauschdienst and Gottfried Daimler- und Carl Benz-Stiftung.     

Laser etching of fused silica using an adsorbed toluene layer

A new method for laser etching of transparent materials with a low etch rate and a very good surface quality is demonstrated. It is based on the pulsed UV-laser backside irradiation of a transparent material that is covered with an adsorbed toluene layer. This layer absorbs the laser radiation causing the etching of the solid. The threshold fluence for etching of fused silica amounts to 0.7 J/cm². The constant etch rate of about 1.3 nm/pulse that has been observed in a fluence interval from 2 to 5 J/cm² is evidence of a saturated process. The limited thickness of the adsorbed layer causes the low etch rates and the rate saturation. The etched surface structures have well defined edges and low surface roughness values of down to 0.4 nm rms. PACS 81.65.Cf; 81.05.Kf; 79.20.Ds; 61.80.Ba; 42.55.Lt     

High-speed etching of hexagonal GaN by laser ablation and successive chemical treatment

Photostimulated direct etching of GaN has been demonstrated with extremely high etching rate up to 135 nm/pulse. The process consists of laser irradiation and ex-situhydrochloric acid treatment. Not only deep etching but also a highly planarized surface are obtained by an increase in laser fluence and the number of pulses. Seven-pulse irradiation at 1 J/cm² decreases surface average roughness (R_a) to ~2 nm from ~10 nm of the untreated sample. No deep-level emission (450-600 nm) is detected in photoluminescence measurement on the samples irradiated with laser fluences as high as 3 J/cm².     

Tungsten ions produced by infrared pulsed laser irradiation

Energetic ions have been obtained irradiating a tungsten target with a Q-switched Nd:Yag laser, 1064?nm wavelength, 9?ns pulse width, 900?mJ maximum pulse energy and power density of the order of 10¹⁰?W/cm². The laser-target interaction induces a strong metal etching with production of plasma in front of the target. The plasma contains neutrals and ions with high charge state. Time-of-flight measurements are presented for qualitative analysis of the ion production. A cylindrical electrostatic ion analyzer permits measuring of the yield of emitted ions, the charge state of detected ions and the ion energy distribution. Measurements indicate that, at a laser fluence of the order of 100?J/cm², the charge state may reach 9+ and the ion energy reaches about 5?keV. The ion energy distribution is given as a function of the charge state. Experimental results indicate that an electrical field is developed along the normal to the plane of the target surface, which accelerates the ions up to high velocity. The ion velocity distributions follow a “shifted Maxwellian distribution”, which the author has corrected for the Coulomb interactions occurring inside the plasma.     

Picosecond laser ablation of nickel-based superalloy C263

Picosecond laser (10.4 ps, 1064 nm) ablation of the nickel-based superalloy C263 is investigated at different pulse repetition rates (5, 10, 20, and 50 kHz). The two ablation regimes corresponding to ablation dominated by the optical penetration depth at low fluences and of the electron thermal diffusion length at high fluences are clearly identified from the change of the surface morphology of single pulse ablated craters (dimples) with fluence. The two corresponding thresholds were measured as F _th(D1)¹=0.68±0.02 J/cm² and F _th(D2)¹=2.64±0.27 J/cm² from data of the crater diameters D _1,2 versus peak fluence. The surface morphology of macroscopic areas processed with a scanning laser beam at different fluences is characterised by ripples at low fluences. As the fluence increases, randomly distributed areas among the ripples are formed which appear featureless due to melting and joining of the ripples while at high fluences the whole irradiated surface becomes grainy due to melting, splashing of the melt and subsequent resolidification. The throughput of ablation becomes maximal when machining at high pulse repetition rates and with a relatively low fluence, while at the same time the surface roughness is kept low.     

Nanosecond UV laser damage and ablation from fluoride crystals polished by different techniques

Ablation thresholds and damage behavior of cleaved and polished surfaces of CaF₂, BaF₂, LiF and MgF₂ subjected to single-shot irradiation with 248 nm/14 ns laser pulses have been investigated using the photoacoustic mirage technique and scanning electron microscopy. For CaF₂, standard polishing yields an ablation threshold of typically 20 J/cm². When the surface is polished chemo-mechanically, the threshold can be raised to 43 J/cm², while polishing by diamond turning leads to intermediate values around 30 J/cm². Cleaved surfaces possess no well-defined damage threshold. When comparing different fluoride surfaces prepared by diamond turning it is found that the damage resistivity roughly scales with the band gap. We find an ablation threshold of 40 J/cm² for diamond turned LiF while the MgF₂ surface can withstand a fluence of more than 60 J/cm² without damage. The damage topography of conventionally polished surfaces shows flaky ablation across the laser-heated area with cracks along the cleavage planes. No ablation is observed in the case of chemo- mechanical polishing; only a few cracks appear. Diamond turned surfaces show small optical absorption but mostly cracks and ablation of flakes and, in some cases, severe damage in the form of craters larger than the irradiated area. The origin of such different damage behavior is discussed.     

Micro-hole fabricated inside FOTURAN glass using femtosecond laser writing and chemical etching

Vertical micro-holes were fabricated inside a photosensitive glass (FOTURAN) by focused femtosecond laser (λ = 775 nm) writing, followed by heat treatment and wet chemical etching in 8% hydrofluoric acid solution for 50 min. The micro-holes were analyzed by optical and scanning electron microscopy, and was found they own circular cross-section and clear edge. At present, micro-holes with aspect ratio of about 7 is achieved. By varying the incident laser fluence in a range of 2.3–36.2 J/cm² and the laser writing velocity in 100–1000 μm/s, the influences of femtosecond laser parameters on the formation of micro-holes are characterized as that: writing velocities hardly affect the micro-hole diameter, while relatively lower laser fluences result in smaller diameter, and the cross-section is more circular in this case. The possible reason for this phenomenon is discussed.