Elektrodenanordnung zur Messung des Hall-Effekts an hochohmigen Halbleitern

For measurements of the Hall-effect of high-ohmic samples a new arrangement of electrodes is given which keeps the resistance between the Hall-electrodes small. This method permits to determine the concentration of charge carriers in semiconductors which have mobilities much lower than 1 cm²/Vs. The usefulness of the method is tested for some solids.     

Beitrag zur Erforschung der Bandenfluoreszenz des Cadmiumdampfes

Zeitschrift für Physik A Hadrons and nuclei - Es wurde die Van der Lingensche Fluktuationsbande im Fluoreszenzspektrum des Cadmiumdampfes in Abhängigkeit von der Anregungsart untersucht....     

Ein Amplitudenanalysator Elektrischer Impulse mit Mechanischem Differential zur Messung des Barkhausen-Effekts

Zusammenfassung In dieser Arbeit wird das Prinzip eines neuen Analysators elektrischer Impulse beschrieben, welcher die bisher benutzten elektrischen Antikoinzidenzschaltungen ersetzt.     

Beitrag zur Theorie der Temperaturfaktoren des Vibrationsspektrum der Moleküle

An attempt is made to derive general expressions for temperature factors to which the intensities of the absorption bands of the vibrational spectrum of molecules are directly proportional. For the sake of simplicity, the process of induced emission is neglected. The temperature factor for the line corresponding to the transition (v ₁,v ₂,...,v _s ) (v ₁+p ₁,v ₂+P ₂,...,v _s +p _s ) with multiplicity ₁,₂, ..., is given by expression (3) and the temperature factor for the band is given by expression (4). These relations were used to calculate the ratios of the temperature factors for the case of double and triple degenerate energy levels and satisfactory agreement with the experimental results studied in paper [2] was obtained.

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Abschließend möchte ich Herrn Ing. A. Vako für die Veranlassung zu dieser Arbeit bestens danken.     

Beitrag zur Klärung des Grossen Flusswiderstandes von Selengleichrichtern

The differential resistance of selenium rectifiers in the linear part of the V–I characteristic in the forward direction is considered; its value is three orders of magnitude higher than that of monocrystalline Ge-or Si-rectifiers and is closely connected with the current carrying capacity of selenium rectifiers. X-ray pictures showing the crystalline structure of selenium layers after heat treatment of different duration show increasing crystal growth in the polycrystalline selenium layer so that the differential resistance should be reduced. Measurement of the differential resistance, however, showed a gradual increase following an initial decrease, which is obviously connected with the process of ageing.