Mixing of excitonic states containing light and heavy holes in an isolated GaAs/AlGaAs quantum well in a magnetic field

The Zeeman splitting of the ground states 1s(hh) and 1s(lh) of excitons with heavy and light holes, respectively, in a 15-nm isolated Al_0.3Ga_0.7As/GaAs quantum well in magnetic fields of up to 20 T is investigated according to the photoluminescence excitation spectra in the Faraday geometry (σ⁺− σ⁻ components). The observed anomalous pattern of nonlinear Zeeman splitting and the nonmonotonic behavior of the effective hole g factor are interpreted in terms of the strong mixing of the magnetoexcitonic states containing light and heavy holes. Pis'ma Zh. éksp. Teor. Fiz. 64, No. 1, 52–56 (10 July 1996)     

Dependence of electron spin g-factor on magnetic field in quantum wells

The dependence of electron spin g-factor on magnetic field has been investigated in GaAs/AlGaAs quantum wells. We have estimated the electron g-factor from spin precession frequency in time-resolved photoluminescence measurements under a magnetic field in different configurations; the magnetic field perpendicular (g_⊥) and parallel (g_∥) to the quantum confinement direction. When the angle between the magnetic field and the confinement direction is 45°, we have found that g-factor varies depending on the direction of magnetic field and the circular polarization type of excitation light (σ⁺ or σ^?). These dependences of g-factor exhibit main features of Overhauser effect that nuclear spins react back on electron spin precession. The value of g_⊥ and g_∥ corrected for the nuclear effects agree well with the results of four-band k·p perturbation calculations.     

Wave function engineering in compressive- and tensile-strained laser structures

The engineering of the valence subbands for device applications has concentrated on the energy separation between heavy- and light-hole states. We show that the degree of overlap between the envelope functions of heavy- and light-hole states can affect the in-plane dispersion of the highest hole subband. We consider ways to reduce this overlap by spatially separating the heavy- and light-hole states to different layers, while maximizing their energy separation. Strain-compensated superlattices where opposite strains are introduced in the well and barrier regions offer such possibilities and lead to a significant increase of the optical gain in semiconductor lasers. We consider the In_xGa_1-xAs_yP_1-y /In_x'Ga_1-x'As_y'P_1-y' system grown on an InP substrate where the wells are under biaxial compression while the barriers are under tension. In this type of structures, the electron and heavy-hole states are confined to the compressive layers whereas the light-holes are confined to the tensile layers. We also discuss the possibility of confining light-hole and electron states to wells under tension, of potential benefit for lasers operating in the transverse magnetic (TM) mode.     

Manifestation of a semimetallic state in cyclotron resonance in low-symmetry HgTe-based quantum wells

Cyclotron-resonance measurements in 21-nm-thick HgTe/CdHgTe quantum wells of different crystallographic orientations have been performed. It has been found that, in contrast to the structures with the (001) orientation of the quantum-well plane, (013)-oriented quantum wells are semimetallic and their absorption spectra exhibit both electron and hole cyclotron-resonance lines. The simultaneous presence of the two types of charge carriers originates from an overlap between the upper heavy-hole quantum-confinement subbands hh1 and hh2. This overlap is caused by the strong interaction of these subbands with the Dyakonov-Khaetskii interface state. Calculations carried out using the eight-band kp-Hamiltonian indicate that, for known values of the band-structure parameters, the overlap between hh2 and hh1 subbands does not occur; this result is in agreement with the cyclotron-resonance data for (001)-oriented structures. The enhanced interaction between heavy-hole and interface states owing to the existence of steps at low-symmetry heterointerfaces may be the mechanism responsible for the appearance of an overlap between subbands in HgTe quantum wells with orientation different from (001).     

Effect of interface roughness on the density of states of finite barrier height quantum wells

We calculate the density of states of a 2D electron gas in finite barrier height quantum wells with the explicit inclusion of the interface roughness effect. By using Feynman path-integral method, the analytic expression is derived. The results show that the 2D density of states is dependent on the RMS of the fluctuation potential. The interface roughness causes localized states below the subband edge. We also apply the theory to model the finite barrier height quantum wells in Al_xGa_1?xAs/GaAs.     

Impurity absorption of light involving resonant states of shallow donors in quantum wells

The energy spectrum of localized and resonant states of shallow donors in heterostructures GaAs/Al_xGa_1?xAs with quantum wells is calculated. The widths of the resonant states belonging to the second size quantization subband are determined. It is shown that the width of a resonance level is mainly determined by the interaction with optical phonons. The spectrum of impurity absorption of light due to electron transitions from the ground state of the donor to the resonant states belonging to the second size quantization subband is calculated.     

Nonparabolicity corrections to the valence band energy levels of Si/GexSi1-x quantum wells

In earlier work, subband energies of Si/Ge_xSi_1-x quantum wells were obtained neglecting valence band nonparabolicity. Here we present an algorithm for solving for the energies and wavefunctions of the mixed light-hole and split-off subbands under stress, which incorporates the energy dependence of the effective mass exactly. We show that this gives corrections to the energies that are of the order of tens of meV, and results in small nonorthogonality corrections to the envelope wavefunctions. These corrections are discussed for several cases of physical interest and are compared to the results obtained assuming a constant bandedge effective mass.     

Optical orientation of particles with a random g-factor in semiconductor nanostructures

In real quasi-two-dimensional semiconductor nanostructures (quantum wells, quantum dots), the transverse g-factor of holes is a stochastic quantity. This fact should be taken into account in analyzing the optical orientation and Hanle effect of holes. The Hall effect for an ensemble of particles with a “random” g-factor has been treated theoretically. In the case where the spin relaxation time of a hole with a characteristic g-factor is shorter than the hole lifetime, there can occur a narrowing of the depolarization contour and an increase in its amplitude. In the opposite case of long spin relaxation times (trions in quantum dots), a formula has been derived, which generalizes the previously obtained result to the case of an arbitrary tilt angle of the magnetic field with respect to the plane of the layer (Hanle effect in the tilted form).     

Developments for the direct determination of the g-factor of a single proton in a Penning trap

The measurement and comparison of the magnetic moment (or g-factor) of the proton and antiproton provide a stringent experimental test of the CPT-theorem in the baryonic sector (Quint et al., Nucl Instrum Methods Phys Res, B 214:207, 2004). We present an experimental setup for the first direct high-precision measurement of the g-factor of a single isolated proton in a double cylindrical Penning trap. The application of the continuous Stern-Gerlach effect to detect quantum jumps between the two spin states of the particle, together with a novel trap design specially developed for this purpose, offers the possibility of measuring the magnetic moment not only of a single proton but also of a single antiproton. It is aimed to achieve a relative uncertainty of 10^???9 or better. Preliminary results including mass spectra of particle clouds as well as single proton preparation and detection are shown.     

g-Factor Calculation in Small Quantum Dots

It is shown that the effective Lande splitting factor or g-factor of electrons localized on heterostructures such as small quantum dots is always formed as a difference of two values. The first of themrelates to thematerial of the dot itself and critically depends on its sizes and shape; the second one relates to the barriermaterial (surrounding matrix); therewith, the dependence on the latter does not disappear at any dot sizes. The known (k, p) Kane theory defining the renormalization of electron mass and g-factor in bulk semiconductors, is modified for small quantum dots with “incomplete” band structure. Specific calculations of the electron ground state energy and g-factor are performed for the covariant InAs/AlSb heterostructure not localizing holes and, hence, capable of forming pure one-electron states (prototypes of solid-state qubits).     

Frequency modulation of the 6.2 keV Mössbauer states of181Ta

Mössbauer sidebands up to the first order from a single parent line have been produced by subjecting a non magnetic W(¹⁸¹W) Mössbauer source to a strong oscillating magnetic field of up to 230 Oe amplitude and a frequency of about one megahertz. The sidebands positions and intensities agree very well with theory, which is based on a periodic time-dependent interaction of the magnetic field with the nuclear magnetic moments of ground and excited states, respectively. From the sideband intensity ag-factor ratio ofg _e /g _g =1.75(6) was derived.     

G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors

Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbitinteraction. Due to these factors properties of hole bound states are highly unusual. Weconsider a single hole bound by a spherically symmetric potential, this can be an acceptoror a spherically symmetric quantum dot. Linear response to an external magnetic field ischaracterized by the bound state Lande g-factor. We calculate analytically g-factors of all boundstates.     

Valence-band structure and optical absorption inp-type GaAs–Al0.3Ga0.7As multi-quantum-well infrared photodetectors under an electric field

Hole structure of a GaAs–Al_0.3Ga_0.7Asp-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs wells and six thick Al_0.3Ga_0.7As barriers. The valence subband structure and the optical-absorption coefficient are calculated as functions of the electric-field strength for various doping levels. The subband structure is shown to be nonparabolic and anisotropic in the plane of the layers with a four-fold symmetry. The spin splitting due to the lack of specular symmetry of quantum wells is a growing function of the electric-field strength. The calculated optical absorption is in good agreement with the experimental spectra.     

Excitons and Biexcitons in Spheroidal Quantum Dots A<Subscript>2</Subscript>B<Subscript>6</Subscript>

In the limit of strong quantum confinement the lower energy states of excitons and biexcitons in spheroidal quantum dots of semiconductors with a fourfold degenerate vertex of the valence band, which are active in the dipole approximation at one- and two-photon excitation, have been considered. The comparative analysis of the order of energy levels of the hole in the potentials of the infinitely deep quantum well and a three-dimensional harmonic oscillator taking into account the axial anisotropy of the quantum dot (QD) shape is carried out. It is shown that the anisotropy of the QD shape can lead to the opposite sign of splitting with respect to angular momentum projection ±3/2, ±1/2 for spatially odd (1P_3/2) and even (1S_3/2) levels of the hole. At the same time, in the case of the potential of an infinitely deep quantum well, an inversion of the order of 1S_3/2 and 1P_3/2 levels can be observed at values of the ratio of the effective masses of the light and heavy holes β = m_lh/m_hh ≈ 0.14. The type of the trial wave functions of the hole for the state 1P_3/2 in the potential of an isotropic three-dimensional harmonic oscillator depending on β is proposed. The dependence of the binding energy of excitons in the considered potentials on β is presented and the possibility of formation of various biexcitonic states is considered.     

张应变In1-xGaxAsyP1-y/InP材料光致荧光谱温度特性的测试与分析

报道了具有2，3个量子阱的In_1-x1Ga_x1As_y1P_1-y1/In_1-x2Ga_x2As_y2P_1-y2/InP张应变量子阱材料的光致荧光谱和X射线双晶衍射摇 关键词：     

Shubnikov-de Haas oscillations in p-type inversion layers on n-type silicon

Surface Shubnikov-de Haas oscillations have been measured in p-type channels of (110) silicon field effect transitors between 1.4 and 4.2 K in magnetic fields up to 10 Tesla. Two electric subbands were revealed and the effective masses of the holes in both bands could be determined. For one subband the dependence of the mass on the surface electric field was investigated. At low gate voltages the g-factor of the holes was measured from the spin splitting of the Landau-levels.     

Spin effects in InSb quantum wells

Among the III–V semiconductors, InSb has the smallest electron effective mass and the largest g-factor. We make use of these properties to explore some aspects of electron spin in InSb quantum wells with far-infrared magneto-spectroscopy. We observe the clear signature of spin-resolved cyclotron resonance caused by the non-parabolicity of the conduction band. We observe avoided-level crossings at magnetic fields where Landau levels of the same spin are predicted to intersect. We also study electron spin resonance in the far infrared over a wide range of magnetic field. In samples with symmetrically designed quantum wells we find cyclotron masses and observed g-factors in good agreement with a Pidgeon–Brown analysis adapted to the two-dimensional band structure. However, the spin splitting approaches 3 meV as the magnetic field approaches zero in samples intentionally asymmetrically doped.     

Determination of the g-factor of electrons in N-type silicon surface inversion layers

The g-factor of conduction electrons in the surface inversion layer on a silicon (100) surface has been determined using the tilted magnetic field method developed by Fang and Stiles.The value of (m¹/m₀)·g at the fixed magnetic field was independent of surface carrier density n_s, whereas it had a sharp peak at about 97 koe. At strong magnetic field limit the value was constant and 0.4. If we take the effective mass of conduction electrons in the inversion layer on the (100) surface as 0.2m₀, the g-factor is about two which is the same as that for conduction electrons in bulk silicon.