Properties of the defect mode in one-dimensional ferroelectric Si/C60 photonic crystals

In the present paper, a novel photonic crystal (PC) defect mode is designed by inserting a ferroelectric material layer (LiNbO₃) into Si/C₆₀ one-dimensional PCs. The band structure of the ferroelectric PCs is numerically analyzed by the transfer matrix method (TMM). The width of the photonic band gap increases by 80 nm and a defect mode appears at a central wavelength of 680 nm when a 150 nm LiNbO₃ layer is inserted into the Si/C₆₀ PC structure. The defect mode in the band gap shifts linearly with the change in electric field. The defect mode shifts by 11.2 nm toward shorter wavelengths when the thin film is subjected to a DC voltage of 1 KV.     

Defect modes and wavelength tuning of one-dimensional photonic crystal with lithium niobate

The defect state of the one-dimensional photonic crystals consisting of lithium niobate and air is theoretically investigated. By applying an external voltage on the defect layer, remarkable wavelength tuning can be achieved. The relation between the wavelength peak and the external voltage is a straight line and the tuning rate is 1.358 nm/kV. The dependence of the wavelength peak on the angle of incidence was also observed at each applied voltage. This feature can be employed to fabricate tunable filters.     

Atomic and molecular spectroscopy with a continuous-wave, doubly resonant, monolithic optical parametric oscillator

Doppler-broadened atomic and molecular spectra were observed with a one octave tunable, continuous-wave, doubly resonant, monolithic optical parametric oscillator (OPO) using 5% MgO-doped LiNbO₃ as a non-linear crystal with a birefringent phase-matching configuration. By tuning the frequency of a pump laser, longitudinal mode selection over 20 successive modes, corresponding to a 60 GHz span, was possible, owing to the simple structure of the monolithic OPO. Continuous frequency tuning was achieved using an external waveguide-type electrooptic phase modulator (EOM). By changing the modulation frequency of the EOM, frequency tuning of the optical sidebands over 12 GHz was possible, which is larger than the one free spectral range of the monolithic cavity of 3 GHz. We could observe the Cs-D₁ (894 nm), Cs-D₂ (852 nm), Rb-D₁ (795 nm), acetylene R9 (1520 nm) and P9 (1530 nm) transitions with the single monolithic OPO.     

Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy

We report a study of the annealing temperature and time on Ag catalyst size and density for subsequent growth of ZnO nanorods by catalyst-driven molecular beam epitaxy (MBE). Two different substrates (SiO₂ and SiN_X) for the Ag deposition were used and the thickness of the Ag held constant at 25 Å. Annealing between 600 and 800 °C produced Ag cluster sizes in the range 8-30 nm diameter on SiO₂ and 10-65 nm on SiN_X with a cluster density from 100 to 2500 mm⁻² for SiO₂ and 30 to 1900 mm⁻² for SiN_X. ZnO nanorods grown on these clusters show single-crystal, wurtzite-phase nature and strong band-edge photoluminescence at 380 nm. The nanorods can also be grown selectively on lithographically-patterned dielectric stripes with Ag clusters formed on top by e-beam evaporation and annealing.     

Diode-pumped Yb:KYW thin-disk laser operation with wavelength tuning to small quantum defects

We present continuous wave laser operation of a diode-pumped Yb:KY(WO₄)₂ thin-disk laser with 10.7 W output power, M² = 1.3 and an optical efficiency of 49% at room temperature. Wavelength tuning in a range of 64 nm and lasing with a quantum defect of 0.6% is demonstrated.     

Effect of nanoparticle size on magnetic damping parameter in Co92Zr8 soft magnetic films

Co₉₂Zr₈(50 nm)/Ag(x) soft magnetic films have been prepared on Si (111) substrates by oblique sputtering at 45°. Nanoparticle size of Co₉₂Zr₈ soft magnetic films can be tuned by thickening Ag buffer layer from 9 nm to 96 nm. The static and dynamic magnetic properties show great dependence on Ag buffer layer thickness. The coercivity and effective damping parameter of Co₉₂Zr₈ films increase with thickening Ag buffer layer. The intrinsic and extrinsic parts of damping were extracted from the effective damping parameter. For x=96 nm film, the extrinsic damping parameter is 0.028, which is significantly larger than 0.004 for x=9 nm film. The origin of the enhancement of extrinsic damping can be explained by increased inhomogeneity of anisotropy. Therefore, it is an effective method to tailor magnetic damping parameter of thin magnetic films, which is desirable for high frequency application.     

Electroluminescence with micro-watt output from ultra-small sized Si quantum dots/amorphous SiO2 multilayers prepared by laser crystallization method

We report the fabrication of Si quantum dots (QDs)/SiO₂ multilayers by using KrF excimer laser (248 nm) crystallization of amorphous Si/SiO₂ multilayered structures on ITO coated glass substrates. Raman spectra and transmission electron microscopy demonstrate the formation of Si QDs and the size can be controlled as small as 1.8 nm. After laser crystallization, Al electrode is evaporated to obtain light emitting devices and the room temperature electroluminescence (EL) can be detected with applying the DC voltage above 8 V on the top gate electrode. The luminescent intensity increases with increasing the applied voltage and the micro-watt light output is achieved. The EL behaviors for samples with different Si dot sizes are studied and it is found that the corresponding external quantum efficiency is significantly enhanced in sample with ultra-small sized Si QDs.     

Ca/Ag bilayer cathode for transparent white organic light-emitting devices

We have demonstrated that the compositional modification of the Ca/Ag films is principally responsible for a high transmittance (over 70% in the visible range) and low sheet resistance (10-12 Ω/sq). X-ray photoelectron spectroscopy (XPS) sputter depth profiling of Ca/Ag structure reveals the presence of Ca(OH)₂ and Ca metal. A chemical model of the Ca/Ag cathode is proposed. Using transparent ITO anode and Ca (10 nm)/Ag (10 nm) cathode, efficient white organic light-emitting devices (WOLEDs) emitting from both sides have been fabricated. Brightness of 3813 cd/m² and Commission Internationale de l’Eclairage (CIE) coordinates (0.36, 0.34) at 10 V through ITO anode and values of 1216 cd/m² and (0.33, 0.30) through Ca/Ag cathode are reported. A low turn-on voltage of 5.5 V is measured.     

Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO₂. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10⁻⁵ Ω cm² and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500 °C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500 °C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500 °C-annealed Ag only contacts. LEDs with the 500 °C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500 °C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.     

Thermal stability of nanoscale silver metallization in Ag/W/Co/Si(1 0 0) multilayer

In this work, we have studied thermal stability of nanoscale Ag metallization and its contact with CoSi₂ in heat-treated Ag(50 nm)/W(10 nm)/Co(10 nm)/Si(1 0 0) multilayer fabricated by sputtering method. To evaluate thermal stability of the systems, heat-treatment was performed from 300 to 900 °C in an N₂ ambient for 30 min. All the samples were analyzed by four-point-probe sheet resistance measurement (R_s), Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), and atomic force microscopy (AFM). Based on our data analysis, no interdiffiusion, phase formation, and R_s variation was observed up to 500 °C in which the Ag layer showed a (1 1 1) preferred crystallographic orientation with a smooth surface and R_s of about 1 Ω/□. At 600 °C, a sharp increase of R_s value was occurred due to initiation of surface agglomeration, WSi₂ formation, and interdiffusion between the layers. Using XRD spectra, CoSi₂ formed at the Co/Si interface preventing W silicide formation at 750 and 800 °C. Meantime, RBS analysis showed that in this temperature range, the W acts as a cap layer, so that we have obtained a W encapsulated Ag/CoSi₂ contact with a smooth surface. At 900 °C, the CoSi₂ layer decomposed and the layers totally mixed. Therefore, we have shown that in Ag/W/Co/Si(1 0 0) multilayer, the Ag nano-layer is thermally stable up to 500 °C, and formation of W-capped Ag/CoSi₂ contact with R_s of 2 Ω/□ has been occurred at 750-800 °C.     

Texture development and magnetic properties of [ZrO2/CoPt]n/Ag nanocomposite films

The L1₀ CoPt films with (0 0 1) preferred orientation are achieved by fabricating on the glass substrates and post annealing at 600° C for 30 min. The preferred orientation of [ZrO₂/CoPt]_n/Ag films dependence of the Ag underlayer thickness, ZrO₂ and CoPt interlayer thickness is investigated. A large perpendicular magnetic anisotropy and a nearly perfect L1₀ CoPt (0 0 1) texture are obtained in the [ZrO₂ (3 nm)/CoPt (5 nm)]₃/Ag (10 nm) film. The existence of ZrO₂ plays an important role in reducing the intergranular interactions and in determining the size of CoPt grains. Magnetic reversal in textured CoPt films are close to a Stoner-Wolfarth rotation.     

Step-changed period chirped long-period fiber gratings fabricated by CO2 laser

A CO₂ laser and point-by-point method are used for fabricating step-changed period chirped long-period fiber gratings (LPFG). Several types of period chirped LPFGs have been demonstrated, such as, linearly chirp, peak-shape chirp, and cascaded linearly chirp. Unlike uniform LPFGs, the spectrum change such as multiple attenuation peaks, broader spectrum can be seen in these chirp gratings, and the spectral shape can be controlled by the grating period. Especially, the cascaded linearly chirped LPFGs performs a multi-peak as interference between the core mode and cladding mode, which can be used as multi-wavelength filters in fiber optic communication and fiber optic sensors. Also, a linear tuning range of 1.6 nm with -0.559 pm/με tuning rate is achieved in these types of devices by applying an axial strain.     

Electrically ultra-fast tunable optical filter employing HiBi fiber and phase modulator

An electrically tunable optical filter with ultra-fast tuning time of a few picoseconds is proposed and demonstrated. The filter consists of a phase modulator with HiBi pigtails sandwiched between two polarizers. Tuning of 6.62 nm for a 16.06 nm FSR filter is obtained with an applied voltage of 0.9 V. Tuning speed at 10 Gb/s and risetime of 40 ps is demonstrated with a frequency shift keying modulation experimental setup. Faster tuning speed is potential since the scheme is based on the electro-optic effect of the LiNO₃ crystal with sub-picosecond response time.     

Optimization of optical parametric chirped pulse amplification with different pump wavelengths

Optical parametric chirped pulse amplification with different pump wavelengths was investigated using LBO crystal, at signal central wavelength of 800 nm. According to our theoretical simulation, when pump wavelength is 492.5 nm, there is a maximal gain bandwidth of 190 nm centered at 805 nm in optimal noncollinear angle using LBO. Presently, pump wavelength of 492.5 nm can be obtained from second harmonic generation of a Yb:Sr₅(PO₄)₃F laser. The broad gain bandwidth can completely support ∼6 fs with a spectral centre of seed pulse at 800 nm. The deviation from optimal noncollinear angle can be compensated by accurately tuning crystal angle for phase matching. The gain spectrum with pump wavelength of 492.5 nm is much better than those with pump wavelengths of 400, 526.5 and 532 nm, at signal centre of 800 nm.     

Efficient white organic light-emitting devices using 4,7-diphenyl-1,10-phenanthroline as block layer

A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq₃ [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency η_ext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m² at 15 V.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Magnetic properties of CoPt–SiNx/Ag nanocomposite films

When the thickness of Ag under layer is 25 nm, the CoPt/Ag film has maximum out-of-plane squareness (S_⊥), minimum in-plane squareness (S_∥), and the largest out-of-plane coercivity (H_c⊥), they are 0.95, 0.35, and 15 kOe, respectively. Different volume percent of SiN_x ceramic materials were co-sputtered with Co₅₀Pt₅₀ films on the Ag under layer to reduce the grain size of the CoPt film. Comparing the X-ray diffraction pattern of CoPt-SiN_x/Ag films without annealing with that of the films which annealed at 600 and 700 °C, it is found that the intensities of CoPt (0 0 1) and CoPt (0 0 2) superlattice lines were reduced after annealing. As the SiN_x content is raised to 50 vol%, the particle size of CoPt is reduced to be about 9 nm.     

Highly efficient cathodoluminescence of nanophosphors by solvothermal route

The low voltage excited nano-size of SrTiO₃: Pr, Al red cathodoluminescent phosphors is successfully prepared by hydrothermal and solvothermal processes. Crystal size does not have obvious growth after post-annealing process under the nucleation seeds control. The nanophosphors synthesized by the solvothermal process have a more stoichiometric and cubic SrTiO₃ structure than the hydrothermal ones. SrTiO₃: Pr, Al nanophosphors synthesized by the solvothermal process with 200 °C/24 h possess a cubic crystal size of about 50 nm. The red cathodoluminescent intensity of 200 °C/24 h-solvothermal phosphors is nine times that of the 250 °C/24 h-hydrothermal ones after 1000 °C/1 h heat treatment. The stoichiometric SrTiO₃: Pr, Al nanophosphors by solvothermal preparation need less amounts of Pr activator and Al dopant than when using conventional solid-oxide preparation and can achieve high cathodoluminescence at a wavelength of 615 nm exciting at a low accelerating voltage of 1 kV. The solvothermal process combined with the post-annealing process to synthesize nanophosphors distributes and excites the activator and the dopant more homogeneously and efficiently in the host structure of SrTiO₃, thus enhancing luminescence.     

Laser-induced thermoelectric voltage in normal state MgB2 thin films

Laser-induced voltage has been observed in c-axis oriented MgB₂ thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB₂.     

Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

In this work, the influence of Si/SiO₂ interface properties, interface nitridation and remote-plasma-assisted oxidation (RPAO) thickness (<1 nm), on electrical performance and TDDB characteristics of sub-2 nm stacked oxide/nitride gate dielectrics has been investigated using a constant voltage stress (CVS). It is demonstrated that interfacial plasma nitridation improves the breakdown and electrical characteristics. In the case of PMOSFETs stressed in accumulation, interface nitridation suppresses the hole traps at the Si/SiO₂ interface evidenced by less negative V_t shifts. Interface nitridation also retards hole tunneling between the gate and drain, resulting in reduced off-state drain leakage. In addition, the RPAO thickness of stacked gate dielectrics shows a profound effect in device performance and TDDB reliability. Also, it is demonstrated that TDDB characteristics are improved for both PMOS and NMOS devices with the 0.6 nm-RPAO layer using Weibull analysis. The maximum operating voltage is projected to be improved by 0.3 V difference for a 10-year lifetime. However, physical breakdown mechanism and effective defect radius during stress appear to be independent of RPAO thickness from the observation of the Weibull slopes. A correlation between trap generation and dielectric thickness changes based on the C-V distortion and oxide thinning model is presented to clarify the trapping behavior in the RPAO and bulk nitride layer during CVS stress.