Giant magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems

We theoretically investigate the giant magnetoresistance (GMR) effect in general magnetically modulated semiconductor nanosystems, which can be realized experimentally by depositing two parallel ferromagnetic strips on the top of a heterostructure. Here the exact magnetic profiles and arbitrary magnetization direction of ferromagnetic strips are emphasized. It is shown that a considerable GMR effect can be achieved in such nanosystems due to the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio is strongly influenced by the magnetization direction of ferromagnetic strips in nanosystems, thus possibly leading to tunable GMR devices.     

Influence of superparamagnetic regions on the giant magnetoresistance of electrodeposited Co–Cu/Cu multilayers

The room-temperature magnetoresistance (MR) of electrodeposited Co–Cu/Cu multilayers was investigated. Samples were prepared on either a polycrystalline Ti foil or on a silicon wafer covered with a Ta buffer and a Cu-seed layer. The field dependence of the magnetoresistance was analyzed by decomposing the GMR into ferromagnetic (FM) and superparamagnetic (SPM) contributions, whereby the field dependence of the latter could be described by a Langevin function. In order to better understand the influence of the deposition conditions on the GMR in electrodeposited multilayers, the evolution of the relative importance of the two GMR contributions is discussed in terms of the Co dissolution process during the Cu deposition pulse.     

磁性多层膜的巨磁电阻随铁磁和非磁层厚度变化的唯象理论计算

根据唯象理论，并采用以铁磁─非磁混合层代替铁磁／非磁层界面的理论方法，计算了Ｆｅ／Ｃｒ多层膜的巨磁电阻随铁磁和非磁层厚度的变化关系与实验结果做了比较，发现它们符合得较好．还绘出了巨磁电阻随铁磁和非磁层厚度变化的二元函数图 关键词：     

Tunneling magnetoresistance of the double spin-filter junctions at nonzero bias

A recent theoretical estimation indicated that the NM/FI/FI/NM double spin-filter junction (DSFJ, here the NM and FI represent the nonmagnetic electrode and the ferromagnetic insulator (semiconductor) spacer, respectively) could have very high tunneling magnetoresistance (TMR) at zero bias. To meet the requirement in research and application of the magnetoresistance devices, we have calculated the dependences of tunneling magnetoresistance of DSFJ on the bias (voltage), the thicknesses of ferromagnetic insulators (semiconductors) and the average barrier height. Our results show that except its very high value, the TMR of DSFJ does not decrease monotonously and rapidly with rising bias, but increase slowly at first and decrease then after having reached a maximum value. This feature is in distinct contrast to the ordinary magnetic tunnel junction FM/NI/FM (FM and NI denote the ferromagnetic electrode and the nonmagnetic insulator (semiconductor) spacer, respectively), and is of benefit to the use of DSFJ as a magnetoresistance device.     

A valley-filtering switch based on strained graphene

We investigate valley-dependent transport through a graphene sheet modulated by both the substrate strain and the fringe field of two parallel ferromagnetic metal (FM) stripes. When the magnetizations of the two FM stripes are switched from the parallel to the antiparallel alignment, the total conductance, valley polarization and valley conductance excess change greatly over a wide range of Fermi energy, which results from the dependence of the valley-related transmission suppression on the polarity configuration of inhomogeneous magnetic fields. Thus the proposed structure exhibits the significant features of a valley-filtering switch and a magnetoresistance device.     

The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

Based on the free-electron approximation,we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance(TMR) and tunnelling conductance(TC)in the double magnetic tunnel junctions(DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM,where FM,NM and I(S) represent the ferromagnetic metal,nonmagetic metal and insulator(Semiconductor),respectively,The FM,I(S)and inner NM layers are of finite thickness,while the thickness of the outer NM layer is infinite.The calculated results show that,due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers,the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations,and a much higher TMR can be obtained for suitable thicknesses of FM layers.     

Magnetization reversal and spin accumulation in nonmagnetic metals by spin injection from lateral Co/Cu,Co/Al heterojunctions

We have fabricated ferromagnetic/nonmagnetic (FM/NM) metal heterojunctions for the detection of the spin accumulation effect in different nonmagnetic metals. To understand the effect of spin accumulation in more detail, the switching behavior of the ferromagnetic wires was studied by means of magnetoresistance (MR) measurements and Monte Carlo simulations (MC). The polycrystalline heterojunctions were prepared by high-resolution electron beam lithography (HR-EBL) and a special oblique evaporation technique. The ferromagnetic (FM) and the nonmagnetic (NM) metal were evaporated on top of each other in a single-evaporation step to achieve an interface between the two metals of high quality. To verify the quality of the interface, we measured the spin accumulation effect in nonmagnetic copper (Cu) and aluminum (Al) and determined the spin polarization of the current at the interface between the ferromagnetic and nonmagnetic metals.     

Universal relationship between giant magnetoresistance and anisotropic magnetoresistance in spin valve multilayers

We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the spin-up and spin-down electrons, seen in the anisotropic magnetoresistance. We find that the difference of the GMR in the two configurations, when expressed in terms of the sheet conductance, displays a nearly universal behavior as a function of GMR. On interpreting the results within the Boltzmann transport formalism we demonstrate the importance of bulk scattering for GMR.     

Magnetoresistance effect in a hybrid ferromagnetic/semiconductor nanostructure

We propose a Magnetoresistance device in a magnetically modulated two-dimensional electron gas, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on the top and bottom of a semiconductor heterostructure. It is shown that there exists a significant transmission difference for electrons through the parallel and antiparallel magnetization configurations of such a device, which leads to a considerable magnetoresistance effect. It is also shown that the magnetoresistance ratio of the device depends greatly on the magnetic strength difference in the two delta barriers of the system.     

Exchange bias and negative magnetoresistance in [Co/Bi/Co]/IrMn thin films]

The artificial control of grain-boundary resistance and its contribution to magnetic and magneto-transport properties in [Co(3 nm)/Bi(2.5 nm)/Co(3 nm)]Ir₂₀Mn₈₀(12 nm) thin films that exhibit exchange bias is studied. Transverse magnetoresistance (MR) loops exhibit a negative MR in thin films grown by magnetron sputtering on Si/SiN_x(100 nm) substrates. This negative MR effect is of the giant-MR (GMR) type, although its magnitude is less than 1%. A considerable exchange bias (EB) effect is observed only at lower temperatures, where both, GMR and isothermal magnetization loops exhibit a shift of −600 Oe at 5 K.     

Large room-temperature magnetoresistance and temperature-dependent magnetoresistance inversion in La0.67Sr0.33MnO3/Alq3 - Co nanocomposites/Co devices

Large room-temperature (RT) magnetoresistance (MR) and temperature-dependent MR inversion have been observed in tris (8-hydroxyquinoline) aluminum (Alq₃)-cobalt nanocomposites-based organic-inorganic hybrid devices. Negative MR-high resistance for parallel electrodes configuration — due to magnetization reversal of ferromagnetic (FM) electrodes has been observed at low temperatures. As the temperature increases, the MR undergoes a sign change. At room temperature, a positive MR of ∼9.7% with the resistivity dropping monotonously with increasing magnetic fields has been observed. The RT MR is about two orders of magnitude of that in organic-FM nanocomposites measured with nonmagnetic electrodes. The enhancement of RT MR is attributed to the injection of spin polarized carriers into Alq₃-Co nanocomposites.     

Magnetic and magnetotransport properties in Co5Cu95 melt-spun alloys

Giant magnetoresistance (GMR) has been observed in Co₅Cu₉₅ alloys fabricated by melt-spinning. The highest MR change of 28.0% occurs for Co₅Cu₉₅ after annealing at 450°C for 30 min. Based on the super-paramagnetic assumption, the average size of Co particles embedded in Cu matrix, ranging from 3.0 to 6.0 nm, has been determined by simulating the magnetization curves at 295 K which is higher than the blocking temperatures for the samples. Comparison with phenomenological theory for GMR indicates that the interfacial spin-dependent scattering is the dominant scattering mechanism underlying GMR origin in granular systems. Additionally, for the samples in as-quenched state or annealed at temperatureT _A=350°C, the electron hybridization and super-paramagnetic behaviors of fine Co particles may be responsible for the low value of MR change.     

Size- and voltage-dependent spin polarization in hybrid ferromagnetic-Schottky-metal and semiconductor nanostructure

Recently, an electron-spin filter was proposed by depositing two nanosized ferromagnetic metal stripe and Schottky normal metal stripe on the top of the semiconductor heterostructure [F. Zhai, H.Q. Xu, Y.Guo, Phys. Rev. B 70 (2004) 085308]. In this paper, we theoretically investigate the effect of device parameters on electron-spin polarization in the spin filter. It is shown that the electron-spin polarization is dependent greatly on the sizes and the position of the stripes. Thus, a quantum size effect exists in this device and the optimal spin polarization can be achieved by felicitously fabricating the stripes. It also is shown that the spin polarization can be altered by adjusting the electric-barrier height induced by an applied voltage to the Schottky metal stripe, which can result in a voltage-tunable electron-spin filter.     

Tunable interlayer exchange coupling energy by modification of Schottky barrier potentials

We theoretically demonstrate that the interlayer exchange coupling (IEC) energy can be manipulated by means of an external bias voltage in a F₁/NM/F₂/S (F₁: ferromagnetic, NM: nonmagnetic metallic, F₂: ferromagnetic, S: semiconductor layers) four-layer system. It is well known that the IEC energy between two ferromagnetic layers separated by nanometer thick nonmagnetic layer depends on the spin-dependent electron reflectivities at the interface in F₁/NM/F₂ trilayer system. We apply such dependence to the F₁/NM/F₂/S four-layer system, where the reflectivity of NM/F₂ interface also depends on F₂/S interface due to the multiple reflection of an electron like optics. Finally, the IEC energy depends on the spin-dependent electron reflectivity not only at the interfaces of F₁/NM/F₂, but also at the interface of F₂/S. Naturally the Schottky barrier is formed at the interface between metallic ferromagnetic layer and semiconductor, the Schottky barrier height and thickness can be tailored by an external bias voltage, which causes the change of the spin-dependent reflectivity at F₂/S interface. We show that the IEC energy between two ferromagnetic layers can be controlled by an external bias voltage due to the electron-optics nature using a simple free-electron-like one-dimensional model.     

Voltage-tunable spin electron beam splitter based on antiparallel double δ-magnetic-barrier nanostructure

We report on a theoretical study of spin-dependent Goos-Hänchen (GH) shift of electrons in antiparallel double δ-magnetic-barrier (MB) nanostructure under an applied voltage, which can be experimentally realized by depositing two metallic ferromagnetic (FM) stripes on top and bottom of the semiconductor heterostructure. GH shifts for spin electron beams across this device, is exactly calculated, with the help of the stationary phase method. It is shown that a considerable spin polarization of GH shifts can be achieved in this device for two δ-MBs with unidentical magnetic strengths. It also is shown that both magnitude and sign of spin polarization of GH shifts can be controlled by adjusting the electric potential induced by the applied voltage. These interesting properties may provide an effective approach of spin injection for spintronics application, and this device can be used as a voltage-tunable spin beam splitter.     

Giant magnetoresistance effect in nanostructures consisting of magnetic–electric barriers

The GMR effect in magnetic–electric barrier nanostructure, which can be realized experimentally by depositing two parallel metallic ferromagnetic strips with an applied voltage on the top of heterostructure, is investigated theoretically. It is shown that a considerable GMR effect can be achieved in such nanosystems due to the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio is strongly dependent upon the applied voltage to metallic ferromagnetic strips in nanosystems, thus may leading to voltage-tunable GMR devices.     

CoFe-based granular alloys: the role of the metallic matrix

RF-sputtered CoFe-NM granular alloys (NM=Ag, Cu) with CoFe volume content, x_v, ranging from 0.10 to 0.45 have been studied. These two series of samples show similar features depending on the synthesis conditions and post-deposition annealing treatments, revealing the strong dependence of magnetotransport properties on microstructure. Three different regimes have been observed as x_v is increased: the classical giant magnetoresistance (GMR) regime at low ferromagnetic contents; at intermediate x_v, a domain structure appears, and GMR and anisotropic magnetoresistance (AMR) together with domain wall scattering are observed; and a third regime at x_v close but below the volume percolation threshold, where the two latter contributions still coexist, while the GMR contribution has been suppressed by strong magnetic correlations. The role of the metallic matrix is crucial to determine the crossover ferromagnetic contents between these three regimes, which depend on the relative immiscibility of CoFe either in the Ag or Cu matrices and the diffusivity of Ag and Cu. Moreover, the metallic matrix settles the degree of CoFe segregation, sample crystallisation and texture, which are responsible for the magnetotransport properties.     

铁磁、肖特基金属和半导体纳米自旋过滤器中的量子尺寸效应

采用转移矩阵法,研究了结构尺度对自旋过滤器中电子自旋极化特性的影响．该自旋过滤器可以通过在半导体异质结上沉积纳米尺度的铁磁条带和肖特基金属条带来实现．计算结果表明,电子的自旋极化特性强烈依赖于铁磁条带和肖特基金属条带的结构尺度和位置,即该器件中存在量子尺寸效应．此外,我们的计算结果还表明,电子的自旋极化特性还与施加在肖特基金属条上的电压所诱发的电垒高度密切相关．因此,我们可以通过改变施加在肖特基金属条上的电压来调控该器件中电子的自旋极化特性,制造一个电压可调的电子自旋过滤器．     

Analysis of the magnetoresistance contributions in a nanocrystallized Cr-doped FINEMET alloy

The magnetoresistance (MR) was measured at 200, 250 and 300 K in magnetic fields up to B=12 T for a nanocrystallized Fe_63.5Cr₁₀Nb₃Cu₁Si_13.5B₉ alloy. Both the longitudinal (LMR) and transverse (TMR) component of the magnetoresistance decreased from B=0 to about 0.1 T. This could be ascribed to a giant MR (GMR) effect due to spin-dependent scattering of conduction electrons along their path between two Fe-Si nanograins via the non-magnetic matrix. Such a scattering may occur if the nanograin moments are not or only weakly coupled in the absence of a strong exchange coupling (due to the high Cr content in the matrix) and/or only weak dipole-dipole coupling is present (due to sufficiently large separations between the nanograins). For larger fields, the GMR saturated and a slightly nonlinear increase in MR with B was observed due to a contribution by the residual amorphous matrix. The anisotropic MR effect (AMR≡LMR−TMR) was negative for all fields and temperatures investigated. By measuring the MR of melt-quenched Fe_100−xSi_x solid solutions with x=15, 18, 20, 25 and 28, the observed AMR could be identified as originating from the Fe-Si nanograins having a D0₃ structure.     

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I—V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.