铁磁/半导体(绝缘体)/铁磁异质结中渡越时间与两铁磁层磁矩夹角变化的关系

在群速度概念的基础上, 研究了自旋极化电子隧穿通过铁磁体/半导体(绝缘体)/铁磁体异质结时, 渡越时间随两端铁磁层中磁矩夹角变化的关系. 研究结果表明: 当中间层为半导体层时, 由于半导体层中的Rashba自旋轨道耦合强度的影响, 自旋向上电子和自旋向下电子的渡越时间差会在两铁磁层相对磁矩夹角为π/2和3π/2附近出现一个极小值. 当中间层为绝缘体层时, 势垒高度的变化会导致不同取向的自旋极化电子渡越时间差的变化, 并当势垒高度超过一临界值时发生翻转. 关键词： 铁磁体/半导体(绝缘体)/铁磁体异质结 Rashba自旋轨道耦合强度 渡越时间 磁矩     

含δ势垒的铁磁/半导体/铁磁异质结中的自旋输运和渡越时间

研究了含δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和渡越时间,讨论了量子尺寸效应和Rashba自旋轨道耦合效应对隧穿特性的影响.研究结果表明：δ势垒的存在降低了自旋电子的透射概率,改变了透射概率的位相.Rashba自旋轨道耦合强度的增加加大了透射概率的振荡频率.不同自旋取向的电子隧穿异质结时,渡越时间随着半导体长度、Rashba自旋轨道耦合强度以及两铁磁电极中的磁化方向的夹角的变化而变化. 关键词： δ势垒')" href="#">δ势垒 铁磁/半导体/铁磁异质结 Rashba自旋轨道耦合效应 渡越时间     

Effect of Rashba spin-orbit coupling on the spin-polarized transport in ferromagnet/semiconductor double tunnel junctions

Considering the Rashba spin-orbit interaction in the semiconductor, we study theoretically the spin-polarized transport in a two-dimensional ferromagnetic semiconductor double tunnel junctions by a quantum-mechanical approach. It is found that the transmission coefficient shows typical resonant transmission properties and the Rashba spin-orbit coupling has great different influences on the transmission coefficients of electrons with spin-up and down and tunnelling magnetoresistance (TMR). More importantly, the TMR is significantly enhanced by increasing the spin-orbit coupling, which is very useful for the designing of magnetic digital and memory sensor.     

自旋轨道耦合和磁场对准一维铁磁/半导体/铁磁系统中电子输运性质的影响

利用传递矩阵方法，我们计算了自旋轨道耦合和磁场对准一维铁磁/半导体/铁磁系统中电子输运性质的影响。计算结果发现，透射系数的振幅随磁场增加而增大。在反铁磁排列时，即使在磁场作用下，上、下自旋电子具有相同的透射系数。与不加磁场时的情况相反，在一定的磁场和耦合强度时，铁磁排列中，上自旋电子的透射系数大于下自旋电子的，而且出现了自旋反转。     

The effects of Dresselhaus and Rashba spin-orbit interactions on the electron tunneling in a non-magnetic heterostructure

We theoretically investigate the electron transport properties in a non-magnetic heterostructure with both Dresselhaus and Rashba spin-orbit interactions. The detailed-numerical results show that (1) the large spin polarization can be achieved due to Dresselhaus and Rashba spin-orbit couplings induced splitting of the resonant level, although the magnetic field is zero in such a structure, (2) the Rashba spin-orbit coupling plays a greater role on the spin polarization than the Dresselhaus spin-orbit interaction does, and (3) the transmission probability and the spin polarization both periodically change with the increase of the well width.     

Zero field spin splitting in asymmetric quantum wells

Spin splitting of asymmetric quantum wells is theoretically investigated in the absence of any electric field, including the contribution of interface-related Rashba spin-orbit interaction as well as linear and cubic Dresselhaus spin-orbit interaction. The effect of interface asymmetry on three types of spin-orbit interaction is discussed. The results show that interface-related Rashba and linear Dresselhaus spin-orbit interaction can be increased and cubic Dresselhaus spin-orbit interaction can be decreased by well structure design. For wide quantum wells, the cubic Dresselhaus spin-orbit interaction dominates under certain conditions, resulting in decreased spin relaxation time.     

Spin-Tunneling Time in Ferromagnetic/Semiconductor/Ferromagnetic Three-Terminal Heterojunction in the Presence of Rashba Spin-Orbit Coupling

We study theoretically the transmission coefficients and the spin-tunneling time in ferromagnetic/semiconductor/ferromagnetic three-terminal heterojunction in the presence of Rashba spin-orbit interaction, in which onedimensional quantum waveguide theory is developed and applied. Based on the group velocity concept and the particle current conservation principle, we calculate the spin-tunneling time as the function of the intensity of Rashba spin-orbit coupling and the length of the semiconductor. We find that as the length of the semiconductor increases, the spintunneling time does not increase linearly but shows behavior of slight oscillation. Furthermore, with the increasing of the spin-orbit coupling, the spin-tunneling time increases.     

Spin-orbit gauge and quantum spin Hall effect

We have shown that the non-Abelian spin-orbit gauge field strength of the Rashba and Dresselhaus interactions, when split into two Abelian field strengths, the Hamiltonian of the system can be re-expressed as a Landau level problem with a particular relation between the two coupling parameters. The quantum levels are created with up and down spins with opposite chirality and leads to the quantum spin Hall effect.     

铁磁/半导体/铁磁结构的双量子环自旋输运的特性

研究了与铁磁/半导体/铁磁结构相关的双量子环自旋输运的规律,研究结果表明：总磁通为零条件下,铁磁电极磁化方向反平行时,双量子环与单量子环相比提高了自旋电子透射概率的平均值.铁磁电极磁化方向平行时,双量子环对提高自旋向下电子平均透射概率的效果更明显;双量子环受到Rashba自旋轨道耦合作用影响时,自旋电子的平均透射概率明显高于单量子环,即使再加上外加磁场的影响,透射概率较高这一特征依然存在;双量子环所含的δ势垒具有阻碍自旋电子输运的作用,随δ势垒强度Z的增大透射概率 关键词： 双量子环 Rashba自旋轨道耦合 透射概率 δ势垒')" href="#">δ势垒     

Intersubband spin-orbit coupling and spin splitting in symmetric quantum wells

In semiconductors with inversion asymmetry, spin-orbit coupling gives rise to the well-known Dresselhaus and Rashba effects. If one considers quantum wells with two or more conduction subbands, an additional, intersubband-induced spin-orbit term appears whose strength is comparable to the Rashba coupling, and which remains finite for symmetric structures. We show that the conduction band spin splitting due to this intersubband spin-orbit coupling term is negligible for typical III-V quantum wells.     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

Effects of geometry and linearly polarized cavity photons on charge and spin currents in a quantum ring with spin-orbit interactions

We calculate the persistent charge and spin polarization current inside a finite-width quantum ring of realistic geometry as a function of the strength of the Rashba or Dresselhaus spin-orbit interaction. The time evolution in the transient regime of the two-dimensional (2D) quantum ring connected to electrically biased semi-infinite leads is governed by a time-convolutionless non-Markovian generalized master equation. The electrons are correlated via Coulomb interaction. In addition, the ring is embedded in a photon cavity with a single mode of linearly polarized photon field, which is polarized either perpendicular or parallel to the charge transport direction. To analyze carefully the physical effects, we compare to the analytical results of the toy model of a one-dimensional (1D) ring of non-interacting electrons with spin-orbit coupling. We find a pronounced charge current dip associated with many-electron level crossings at the Aharonov-Casher phase ΔΦ = π, which can be disguised by linearly polarized light. Qualitative agreement is found for the spin polarization currents of the 1D and 2D ring. Quantitatively, however, the spin polarization currents are weaker in the more realistic 2D ring, especially for weak spin-orbit interaction, but can be considerably enhanced with the aid of a linearly polarized electromagnetic field. Specific spin polarization current symmetries relating the Dresselhaus spin-orbit interaction case to the Rashba one are found to hold for the 2D ring, which is embedded in the photon cavity.     

Resonance features of the conductance of open billiards with the spin-orbit interaction

The transport properties of a circular billiard with attached channels, which is an open system, have been studied in the presence of the Dresselhaus and Rashba spin-orbit interactions. It has been shown that this interaction leads to the appearance of additional Fano resonances in the energy dependence of the conductance, the width of which is proportional to the fourth power of the spin-orbit coupling constant.     

Universal spin-Hall conductance fluctuations in two dimensions

We report a theoretical investigation on spin-Hall conductance fluctuation of disordered four-terminal devices in the presence of Rashba or/and Dresselhaus spin-orbital interactions in two dimensions. As a function of disorder, the spin-Hall conductance GsH shows ballistic, diffusive, and insulating transport regimes. For given spin-orbit interactions, a universal spin-Hall conductance fluctuation (USCF) is found in the diffusive regime. The value of the USCF depends on the spin-orbit coupling tso but is independent of other system parameters. It is also independent of whether Rashba or Dresselhaus or both spin-orbital interactions are present. When tso is comparable to the hopping energy t, the USCF is a universal number approximately 0.18e/4pi. The distribution of GsH crosses over from a Gaussian distribution in the metallic regime to a non-Gaussian distribution in the insulating regime as the disorder strength is increased.     

Spin-Tunneling Time in Ferromagnetic/Semiconductor/Ferromagnetic Three-Terminal Heterojunction in the Presence of Rashba Spin-Orbit Coupling

We study theoretically the transmission coefficients and the spin-tunneling time in ferromagnetic/semiconductor/ferromagnetic three-terminal heterojunction in the presence of Rashba spin-orbit interaction, in which onedimensional quantum waveguide theory is developed and applied. Based on the group velocity concept and the particle current conservation principle, we calculate the spin-tunneling time as the function of the intensity of Rashba spinrblt coupling and the length of the semiconductor. We find that as the length of the semiconductor increases, the spintunneling time does not increase linearly but shows behavior of slight oscillation, i;brthermore, with the increasing of the soin-orbit coupling, the spin-tunneling time increases.     

Spin-dependent resonant tunneling in a periodic non-magnetic heterostructure with spin-orbit effects

We theoretically investigate the electron transport in a periodic non-magnetic heterostructure with both Dresselhaus and Rashba spin-orbit effects. We show that the transport properties obviously depend on the number of periods and the large spin polarization can be achieved in such a structure. We also show that for m>1, the resonance splitting occurs in the transmission curves of both spin-up and spin-down electrons when the transmission curves are plotted as a function of the electron energy or the well width.     

Orbital ac spin-Hall effect in the hopping regime

The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(omega) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to omega2. At nonzero temperatures the coupling to the phonons yields an imaginary term proportional to omega. The interference also yields persistent spin currents at thermal equilibrium, at E=0. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other.     

Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure

Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields.     

Controlling spin-dependent transport via inhomogeneous magnetic flux in double-dot Aharonov-Bohm interferometer

We study the spin-dependent electron transport through parallel coupled quantum dots (QDs) embedded in an Aharonov-Bohm (AB) interferometer connected asymmetrically to leads. Both the Rashba spin-orbit interaction (RSOI) inside one of the QDs, which acquires a spin-dependent phase factor in the tunnel-coupling strengths when the electrons flow through this arm of the AB ring, and an inhomogeneous magnetic flux penetrating the structure are taken into account. Due to the existence of the RSOI induced phase factor, magnetic flux and the interdot coupling, a spin-dependent Fano effect will arise. We pay special attention on the properties of the local density of states and the conductance when the electron phase factor is close to integer multiplies of a quantum of flux. It is shown that the roles and lifetimes of the bonding and antibonding states of the two spin components are very sensitive to the phase factor and can be well controlled accordingly. This manipulation of the spin degree of freedom relies on the existence of RSOI but can be fulfilled even when its strength is very weak. The proposed structure can be easily realized with present technology and might be of practical applications in spintronics devices and quantum computing.     

Nonballistic spin-field-effect transistor

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; these can be tuned to have equal strengths, leading to k-independent eigenspinors even in two dimensions. We discuss two-dimensional devices as well as quantum wires. In the latter, our setup presents strictly parabolic dispersions which avoids complications from anticrossings of different bands.