Transport properties and mechanism of C60 coupled to carbon nanotube electrode

By applying non-equilibrium Green's functions in combination with density-functional theory, we investigate electronic transport properties of C₆₀ coupled to carbon nanotubes and Li electrodes. The results show that electronic transport properties of CNT-C₆₀-CNT and Li-C₆₀-Li systems are completely different. Nonlinear I-V characteristic, varistor-type behavior and negative differential resistance (NDR) phenomenon are observed when electrodes are carbon nanotubes. We discuss the mechanism of I-V characteristics of CNT-C₆₀-CNT systems in details. Our results suggest conductance, energy level of Frontier molecular orbitals, energy gap between HOMO and LUMO, the coupling between molecular orbitals and electrodes are all playing critical roles in electronic transport properties.     

Orientation effect on the electronic transport properties of C24 fullerene molecule

The transport properties of the cage-like molecule depend on its orientation between the electrodes, but the investigation on the mechanism has not been found. Using first-principle density-functional theory (DFT) and non-equilibrium Green’s function (NEGF) formalism for quantum transport calculation, we study the electronic transport properties of C₂₄ fullerene molecule with different orientations in Au–C₂₄–Au two-probe system. The effects of k-point sampling on the Brillouin zone are explored. Our results show that the negative differential resistance of C₂₄ molecule is found in such a system and can be tuned by the molecule's orientation in the two-probe system. We also proposed a mechanism for it. The I–V characteristic under bias voltage is determined. The present findings could be helpful for the application of the C₂₄ molecule in the field of single molecular devices or nanometer electronics.     

Design and First-principles Study of a Fullerene Molecular Device

By using open-ended armchair （6, 6） single-wall carbon nanotubes as electrodes, we investigate the electron transport properties of an all-carbon molecular junction based on the C82 molecule. We find the most stable system among different isomers by performing structural optimization calculations of the Cs2 isomers and the C82 extended molecules. The calculated results show that the C82 -C2 （3） isomer and the C82 extended molecule with C82-C2 isomer are most stable. For the all-carbon hybrid system consisting of C82-C2 extended molecules, it is shown that the Landauer conductance can be tuned over several orders of magnitude both by changing the distance between two electrodes and by changing the orientation of the C82 molecule or rotating one of the tubes around the symmetry axis of the system at a fixed distance. Also, we find the most stable distance between two electrodes from the total energy curve. This fact could make this all-carbon molecular system a possible candidate for a nanoelectronic switch. Moreover, we interpret the conductance mechanism for such a molecular device.     

Study on the electronic transport properties of the C14 monocyclic ring: The first-principles calculations

The transport properties of C₁₄ monocyclic ring sandwiched between two Al(1 0 0) electrodes are investigated by first-principle calculations. The variation of the equilibrium conductance as the function of the separation distance between the molecule and the electrodes is studied. C₁₄ monocyclic ring shows metallic behavior according to the calculated equilibrium conductance. Electron transmission occurs through the lowest unoccupied molecular orbital (LUMO). With gate-voltage applied, it is found that the positive and negative gate-voltages can bring very different effect on the variation of equilibrium conductance. We also calculate the effects of adsorbing other atoms on the carbon ring such as oxygen and sulfur atoms. The results indicate that adsorption of this kind of electron-accepting impurity will decrease the conductance of the system.     

Effect of the encapsulation of Li atom on the electronic transport properties of C20F20 cage

Carrying out theoretical calculations using a self-consistent ab initio approach that combines the non-equilibrium Green′s function formalism with density functional theory, we investigate the effect of the center encapsulation of Li atom on the electronic transport properties of C₂₀F₂₀ cage sandwiched between two bulk gold electrodes. The results show that the electrical conductivity of the endohedral complex Li@C₂₀F₂₀ becomes better than that of the empty C₂₀F₂₀ in the bias voltages ranging from 0 to 1.2 V. The novel negative differential resistance behavior in the I-V characteristic curves can be observed by inserting Li atom into C₂₀F₂₀ cage. The mechanism for the negative differential resistance behavior of Li@C₂₀F₂₀ is suggested.     

First-principles studies of magnetic properties and electronic structure of EuC60

The full potential linearized augmented plane wave (FP-LAPW) method with the GGA+U approach was applied to study the electronic structures of the compound Eu₆C₆₀. Present calculations show that the hybridization between the Eu s, d state and the C₆₀ π states plays an essential role in its FM exchange interactions between the 4f electrons and metallic properties.     

Crystal structural, magnetic and electrical transport properties of CeKFeMoO6 double perovskite

The crystal structural, magnetic and electrical transport properties of double perovskite CeKFeMoO₆ have been investigated. The crystal structure of the compound is assigned to the monoclinic system with space group P2₁/n and its lattice parameters are a=0.55345(3) nm, b=0.56068(2) nm, c=0.78390(1) nm, β=89.874(2). The divergence between zero-field-cooling and field-cooling M-T curves demonstrates the anisotropic behavior. The Curie temperature measured from C_p-T curve is about 340 K. Isothermal magnetization curve shows that the saturation and spontaneous magnetization are 1.90 and 1.43 μ_B/f.u. at 300 K, respectively. The electrical behavior of the sample shows a semiconductor. The electrical transport behavior can be described by variable range hopping model. Large magnetoresistance, −0.88 and −0.18, can be observed under low magnetic field, 0.5 T, at low and room temperature, respectively.     

Ambipolar organic field-effect transistors on unconventional substrates

In this paper we report on the realization of flexible all-organic ambipolar field-effect transistors (FETs) realized on unconventional substrates, such as plastic films and textile yarns. A double layer pentacene-C₆₀ heterojunction was used as the semiconductor layer. The contacts were made with poly(ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and patterned by means of soft lithography microcontact printing (μCP). Very interestingly growing C₆₀ on a predeposited pentacene buffer layer leads to a clear improvement in the morphology and crystallinity of the film so it obtains n-type conduction despite the very high electron injection barrier at the interface between PEDOT:PSS and C₆₀. As a result, it was possible to obtain all-organic ambipolar FETs and to optimize their electrical properties by tuning the thicknesses of the two employed active layers. Moreover, it will be shown that modifying the triple interface between dielectric/semiconductor/electrodes is a crucial point for optimizing and balancing injection and transport of both kinds of charge carriers. In particular, we demonstrate that using a middle contact configuration in which source and drain electrodes are sandwiched between pentacene and C₆₀ layers allows significantly improving the electrical performance in planar ambipolar devices. These findings are very important because they pave the way for the realization of low-cost, fully flexible and stretchable organic complementary circuits for smart wearable and textile electronics applications.     

Comparative study of porous amorphous a-Si1−xCx films and a-Si1−xCx membranes on structural and luminescence properties

Electrochemical etching of amorphous SiC in fluoride solution was studied. Anodic dissolution and passivation are observed for p-type electrodes under dark illumination. The dissolution of p-type a-Si_1−xC_x is found to be under mixed transport/kinetic control; the diffusion current is of first order in fluoride concentration. Porous etching was not observed in this case. The surface finish of 6H-SiC depends on the experimental conditions; both uniform and porous etching is observed. In this paper, we report the formation of porous p-type amorphous SiC (a-Si_1−xC_x) films, elaborated previously by DC magnetron sputtering and analyze the porous layers (PSC) using scanning electron microscopy, spectrophotometer and photoluminescence. The crystal structures and the preparation conditions of porous SiC are shown to have an effect on the structural and electrical properties of the material obtained. SEM observation indicates that the porous a-Si_1−xC_x layers have shown some specific feature; a semi-cylindrical structure of the porous network has been observed.     

Magnetic exchange interactions induced by Cr-doping in perovskite manganites

The effect of Cr-doping on the structural, magnetic and transport properties of perovskite manganites La_0.8Ca_0.2Mn_1−xCr_xO₃ (0≤x≤0.7) has been investigated. The Curie temperature (T_C) of the Cr-doped samples is almost unchanged up to 30% of Cr-doping. The Cr-doped samples, however, undergo a transition from the parent metallic state to the insulating state below T_C. The dc and ac magnetization data suggest that ferromagnetic clusters induced by double exchange interaction between Cr³⁺ and Mn³⁺ ions and antiferromagnetic components driven by Cr³⁺/Mn⁴⁺ and Cr³⁺/Cr³⁺ interactions are present in the Cr-doped system, which is supported by comparative studies on magnetic and transport properties of LaMnO_3+δ and LaMn_0.75Cr_0.25O_3+δ.     

The dependence of electronic transport on compressive deformation of C60 molecule

The dependence of electronic transport on compressive deformation of C₆₀ molecule is studied theoretically in this work. Brenner's “second generation” empirical potential is used to describe the many-body short-range interatomic interactions for C₆₀ in the molecular dynamics simulations. Our results demonstrate that C₆₀ can be compressed up to a strain ε=0.31 before collapsing. Electronic transport under an applied bias is calculated by using a self-consistent field approach coupled with non-equilibrium Green's function (NEGF) formalism. The transmission probability, conductance gap, and conductance spectrum are found to be sensitive to the compression. The peak value of conductance decreases with the increase of strain until the C₆₀ is compressed up to a strain ε=0.31.     

On the complex admittance plots of β″-alumina and NASICON ceramics samples

Differences in complex admittance plots of β″-alumina and NASICON ceramic samples are discussed on the basis of analysis of their equivalent electrical circuit properties. The grain boundary properties could be derived from admittance plots only when relaxation time of the double layer is greater than that of the grain boundary. The importance of a proper choice of electrodes is emphasized. Certain electrodes, e.g. platinum, due to their high value of the double layer capacitance make possible such characterization. Other electrodes, e.g. graphite and gold, make it difficult in NASICON and impossible in β″-alumina because observed values of the grain boundary capacitance C_gb are much greater for β″-alumina than for NASICON samples. The reasons for high values of the C_gb in β″-alumina and smaller values of the C_gb in NASICON are discussed.     

The physical properties of borocarbide superconductor Y1−xSmxNi2B2C (x≦0.25) and Y1−xSmxPd5B3C0.4 (x≦0.4)

We have investigated the magnetic and transport properties of borocarbide superconductors YNi₂B₂C and YPd₅B₃C_0.4 with Yttrium partially substituted by Samarium. The upper critical fields H_C2 are determined by the scaling analysis of the thermal fluctuation magnetoconductivity. Around the transition region, the thermal fluctuation magnetoconductivity can be scaled by a universal function for all applied magnetic fields. The formula H_C2(T)=H_C2(0)[1−(T/T_C)^3/2]^3/2 of a narrow-band pairing mechanism gives an excellent fit to the value of upper critical field H_C2(0)=7.6 T in the Y_0.8Sm_0.2Pd₅B₃C_0.4 compound. The superconducting coherence length ξ is determined to be 6.58 nm, the Ginzburg-Landau parameter κ is 29 and the penetration depth λ is 191 nm.     

Double M–I transitions and low-temperature resistivity minimum of La2/3Ca1/3Mn1−xCoxO3(0⩽x⩽0.15) manganite

A series of Mn-site Co-doping samples La_2/3Ca_1/3Mn_1−xCo_xO₃ (0?x?0.15) have been prepared. The structure, magnetic and transport properties of this system have been systematically investigated. All the samples showed good single phase, and the lattice parameters decreased with the increase of doping concentration x. Only one paramagnetic–ferromagnetic transition was observed. The Curie temperature T_C decreases gradually and the transition width becomes wider with the increase of x. The abnormal transport properties were induced by Co doping, characterized by the double metal–insulator transitions and low-temperature minimum behavior. The present results are discussed and possible explanations were given based on the related theory and previous reported results.     

Magnetic and electrical properties of new magnetic phase in Si1−xMnx crystals

We have investigated the magnetic and electrical transport properties of Si_1−xMn_x single crystals grown by the vertical Bridgman method. The alloys with Mn concentrations up to x=0.64 have weak ferromagnetic ordering around T_C∼30 K. However, Si_0.25Mn_0.75 alloys show weak ferromagnetic ordering at 70 K and antiferromagnetic ordering at 104 K, which is confirmed by magnetization and electrical transport studies.     

Electronic structure and transport of Ca3Co2O6 and Ca3CoNiO6

We have calculated the band structure of Ca₃Co₂O₆ and Ca₃CoNiO₆ by using the self-consistent full-potential linearized augmented plane-wave method within density function theory and the generalized gradient approximation for the exchange and correlation potential. The spin-orbit interaction is incorporated in the calculations using a second variational procedure. The relation of these band structure calculations to thermoelectric transport is discussed. The results illustrate that transport is highly anisotropic with much larger mobility in the a-b plane than out of the a-b plane, and the introduction of Ni in Ca₃Co₂O₆ alters its electronic structure and its thermoelectric transport properties.     

Raman spectra of samarium-fullerene intercalation compounds

Samarium-fullerene intercalation compounds of nominal composition Sm_xC₆₀ (x=1,2,…,6) have been synthesized by a solid-state reaction method. We obtain a Sm_2.75C₆₀ superconducting phase with orthogonal structure and a Sm₆C₆₀ phase with body-centered cubic structure. The broadening and weakening of Raman peaks of the Sm_xC₆₀ compounds are due to the distortion of C₆₀ and electron-phonon interaction. The Raman measurements reveal that the distortion of C₆₀ decrease in Sm_xC₆₀ (x=3,4,5) exposed to air, although the fulleride solids have transformed into an amorphous state. The Raman results also show that the distortion of C₆₀ is still very large in the Sm₆C₆₀ exposed to air, or the C₆₀ molecules have been destroyed and become some amorphous carbide.     

Temperature dependent transport properties of CuInSe2-ZnO heterostructure solar Cell

Experimental study of dc and ac transport properties of CuInSe₂/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe₂/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C⁻²-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.     

The effect of transition element doping on the electronic and magnetic properties of La1.4Sr1.6Mn2O7

The effect of transition element (TE=Cr, Fe, Co, Ni, Cu, Zn) doping on the electronic transport and magnetic properties in the bilayer manganite La_1.4Sr_1.6Mn₂O₇ is studied for the same dopant concentration fixed at 2%. Doping does not cause change in structure but different behavior in magnetic and transport properties. Except for Cr, all the other dopings significantly shift the magnetic transition temperature (T_C) to a lower temperature. Associated with such a decrease, the insulator-metal transition temperature (T_IM) decreases and the peak resistivity (ρ_p) at T_IM increases. Cr doping enhances T_C and T_IM as well as decreases ρ_p. Fe doping apparently has a stronger effect than Co and Ni doping. It is also indicated that Cu doping causes an anomalously large increase in ρ_p. These behaviors are compared with those observed in other bilayer manganites such as La_1.2Sr_1.8Mn₂O₇ as well as in La_0.7Ca_0.3Mn_1−xTE_xO₃.     

Electronic Transport in Molecular Junction Based on C20 Cages

Choosing closed-ended armchair （5, 5） single-wall carbon nanotubes （CCNTs） as electrodes, we investigate the electron transport properties across an all-carbon molecular junction consisting of C20 molecules suspended between two semi-infinite carbon nanotubes. It is shown that the conductances are quite sensitive to the number of C20 molecules between electrodes for both configuration CF1 and double-bonded models： the conductances of C20 dimers are markedly smaller than those of monomers. The physics is that incident electrons easily pass the C20 molecules and are predominantly scattered at the C20-C20 junctions. Moreover, we study the doping effect of such molecular junction by doping nitrogen atoms substitutionally. The bonding property of the molecular junction with configuration CF1 has been analysed by calculating the Mulliken atomic charges. Our results have revealed that the C atoms in N-doped junctions are more ionic than those in pure-carbon ones, leading to the fact that N-doped junctions have relatively large conductance.