Spin valve effect and negative tunnel magnetoresistance in a quantum dot transistor

We study the spin polarized transport through a quantum dot transistor. It is shown that the interplay of large Coulomb interaction and optically induced spin accumulation gives rise to the spin valve effect over a range of bias. We also find negative tunnel magnetoresistance for system with ferromagnetic electrodes.     

Influence of Majorana doublet on transport through a quantum dot system with ferromagnetic leads

We investigate the electron transport through a quantum dot connected with two ferromagnetic leads, by coupling one Majorana doublet laterally to the quantum dot. It is found that Majorana doublet keeps the value of zero-bias conductance to be independent of the shift of structural parameters, including dot level, relative lead-magnetization direction, and magnetic field on the dot. Even in the cases of asymmetric dot-lead couplings, the zero-bias conductance is weakly dependent on the relative lead-magnetization direction. On the other hand, when Majorana doublet is replaced by Majorana singlet, the zero-bias conductance value becomes sensitive to the structural parameters. Via analyzing the respective particle motion processes, the different influences of Majorana doublet and singlet are explained. We believe that this work can be helpful for understanding the peculiar properties of Majorana doublet.     

Tunable spin current through a T-shaped double quantum dot molecule

We present a spin current generator based on a T-shaped double quantum dot (TDQD) molecule connected with two leads, and the coherent spin-flip effect is taken into account within the TDQD. The spin current from the right output terminal is obtained, more importantly, the properties of the spin current are investigated in detail, these results offer us a way to manipulate the spin current with the system parameters.     

Effects of concentration on magnetization in a diluted magnetic semiconductor quantum dot

The donor bound spin polaron in a Cd_1?xMn_xTe quantum dot is investigated theoretically. Spin polaronic shifts are estimated using a mean field theory. Magnetization is calculated for various concentrations of Mn²⁺ ions with the dot sizes. The lowest binding energies in a diluted magnetic semiconductor of a Cd_1?xMn_xTe quantum dot are also estimated. Using the effective mass approximation, calculations are presented with and without spatial dependent effective masses. It is found that (i) the lowest binding energy decreases with the dot radius (ii) position dependent mass gives larger binding energy for smaller dots (iii) the ionization energy becomes more when spin interaction energy is included (iv) variation of increase in ionization energy is sharper for smaller dots with increase in concentration and (v) the magnetization of Mn subsystem increases when concentration of Mn²⁺ ions increases and it has appreciable changes for smaller dots.     

Thermoelectric transport through a quantum dot with a magnetic impurity

We study the thermoelectric effect in a small quantum dot with a magnetic impurity in the Coulomb blockade regime.The electrical conductance,thermal conductance,thermopower,and the thermoelectrical figure of merit(FOM)are calculated by using Green’s function method.It is found that the peaks in the electrical conductance are split by the exchange coupling between the electron entering into the dot and the magnetic impurity inside the dot,accompanied by the decrease in the height of peaks.As a result,the resonances in the thermoelectric quantities,such as the thermal conductance,thermopower,and the FOM,are all split,opening some effective new working regions.Despite of the significant reduction in the height of the electrical conductance peaks induced by the exchange coupling,the values of the FOM and the thermopower can be as large as those in the case of zero exchange coupling.We also find that the thermoelectric efficiency,characterized by the magnitude of the FOM,can be enhanced by adjusting the left–right asymmetry of the electrode–dot coupling or by optimizing the system’s temperature.     

Entanglement and Zeeman interaction in diluted magnetic semiconductor quantum dot

We present theoretically the Zeeman coupling and exchange-induced swap action in spin-based quantum dot quantum computer models in the presence of magnetic field. We study the valence and conduction band states in a double quantum dots made in diluted magnetic semiconductor. The latter have been proven to be very useful in building an all-semiconductor platform for spintronics. Due to a strong p–d exchange interaction in diluted magnetic semiconductor (Cd_0.57Mn_0.43Te), the relative contribution of this component is strongly affected by an external magnetic field, a feature that is absent in nonmagnetic double quantum dots. We determine the energy spectrum as a function of magnetic field within the Hund–Mulliken molecular-orbit approach and by including the Coulomb interaction. Since we show that the ground state of the two carriers confined in a vertically coupled quantum dots provide a possible realization for a gate of a quantum computer, the crossing between the lowest states, caused by the giant spin splitting, can be observed as a pronounced jump in the magnetization of small magnetic field amplitude. Finally, we determine the swap time as a function of magnetic field and the inter dot distance. We estimate quantitatively swap errors caused by the field, establishing that error correction would, in principle, be possible in the presence of nonuniform magnetic field in realistic structures.     

Kondo transport through a quantum dot coupled with side quantum-dot structures

This paper investigates Kondo transport properties in a quadruple quantum dot (QD) based on the slave-boson mean field theory and the non-equilibrium Green’s function.In the quadruple QD structure one Kondo-type QD sandwiched between two leads is side coupled to two separate QD structures:a single-QD atom and a double-QD molecule.It shows that the conductance valleys and peaks always appear in pairs and by tuning the energy levels in three side QDs,the one-,two-,or three-valley conductance pattern can be obtained.Furthermore,it finds that whether the valley and the peak can appear is closely dependent on the specific values of the interdot couplings and the energy level difference between the two QDs in the molecule.More interestingly,an extra novel conductance peak can be produced by the coexistence of the two different kinds of side QD structures.     

Photon-assisted shot noise through a quantum dot coupled to Luttinger liquid

Photon-assisted shot noise through a quantum dot coupled to Luttinger liquid leads is considered using nonequilibrium-Green-function-method. We find that the effect of ac field on the differential shot noise is different for different intralead electron interaction. The inelastic channels associated with photon-assisted-tunneling can dominate electron transport for some ac parameters.     

Thermally driven pure spin current through an interacting quantum dot

We study spin-dependent electron transport properties of a thermally driven interacting quantum dot. When an external magnetic field is applied to the quantum dot, the effective transmissions of spin-up and spin-down electrons are separated from each other and have a perfect mirror symmetry with respect to the incident energy at a certain gate voltage. A pure spin current can be induced in the system and modulated by a magnetic field. Under certain magnetic field strengths, a larger pure spin current can be obtained at gate voltages with the values in a range, not just at a specific voltage. These results indicate that the system can be worked as a pure spin current generator.     

Universal transport properties of a quantum dot system with a laterally-coupled Majorana zero mode

We present a comprehensive analysis about the transport properties of a quantum dot (QD) system with a side-coupled Majorana zero mode. Our calculation result shows that when the coupling manners between the two leads and QDs are identical, the local Andreev reflection and the interlead normal tunneling have the same magnitude at the zero-bias limit. Accordingly, the zero-bias conductance value is always equal to e²/2h, which is exactly one half of the resonant-tunneling conductance. This result is independent of the level number and the level distribution in the single-QD case, and in the coupled-QD case it is irrelevant to the geometry of the QD molecule. The universal transport property is a powerful evidence for the feasibility to detect the MBSs based on a QD circuit. This result also means that the QD condition is not a key factor to achieve the detection. On the other hand, if the decoupling phenomenon appears, the Majorana zero mode may play a trivial role in contributing to the conductance property.     

Thermoelectric transport properties through a T-shaped single quantum dot

We study the thermopower, thermal conductance, electric conductance and the thermoelectric figure of merit for a gate-defined T-shaped single quantum dot (QD). The QD is solved in the limit of strong Coulombian repulsion U→∞, inside the dot, and the quantum wire is modeled on a tight-binding linear chain. We employ the X-boson approach for the Anderson impurity model to describe the localized level within the quantum dot. Our results are in qualitative agreement with recent experimental reports and other theoretical researches for the case of a quantum dot embedded into a conduction channel, employing analogies between the two systems. The results for the thermopower sign as a function of the gate voltage (associated with the quantum dot energy) are in agreement with a recent experimental result obtained for a suspended quantum dot. The thermoelectric figure of merit times temperature results indicates that, at low temperatures and in the crossover between the intermediate valence and Kondo regimes, the system might have practical applicability in the development of thermoelectric devices.     

Single-shot readout of electron spins in a semiconductor quantum dot

We report on a method for single-shot readout of spin states in a semiconductor quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are first correlated to different charge states using a spin dependence of the tunnel rates. A subsequent fast measurement of the charge on the dot then reveals the original spin state. The method is analyzed theoretically, and compared to a previously used method. We experimentally demonstrate the method by performing readout of the two-electron spin states, achieving a single-shot visibility of more than 80%. We find very long triplet-to-singlet relaxation times (up to several milliseconds), with a strong dependence on in-plane magnetic field.     

Spin dynamics and quantum transport in magnetic semiconductor quantum structures

Quantum structures derived from magnetic semiconductors serve as a powerful arena within which to study the interplay between quantum electronics and thin film magnetism. In particular, the semiconductor aspects of these flexible systems allow direct access to the electronic spin degrees of freedom using both magneto-optical as well as magneto-transport probes. Here we provide an overview of recent developments in the experimental study of II–VI magnetic semiconductor quantum structures, with particular emphasis on the dynamical behavior of field-tunable electronic spin states and spin-dependent quantum transport.     

量子点环的电子输运研究

利用非平衡格林函数方法，研究了量子点环的相干输运性质. 结果表明：与一维量子点阵列 相比，量子点环中的电子出现更多新的准束缚能级. 量子点间耦合的增强会使微分电导振荡 出现退相干现象. 关键词： 量子点 电导     

Time-dependent transport through a quantum dot with the over-dot (bridge) additional tunneling channel

The time-dependent electron transport through a quantum dot with the additional over-dot (bridge) tunneling channel within the evolution operator technique has been studied. The microwave field applied to the leads and quantum dot has been considered and influence of the time-dependent shift of corresponding energy levels on the quantum dot charge and current flowing in the system, its time-averaged values and derivatives of the average current with respect to the gate and source–drain bias voltages have been investigated. The influence of the over-dot tunneling channel on the photon-assisted tunneling has been also studied.     

Tunable supercurrent in a triangular triple quantum dot system

The supercurrent in a triangular triple quantum dot system is investigated by using the nonequilibrium Green's function method. It is found that the sign of the supercurrent can be changed from positive to negative with increasing the strength of spin-flip scattering, resulting in the π-junction transition. The supercurrent and the π-junction transition are also modulated by tuning the system parameters such as the gate voltage and the interdot coupling. The tunable π-junction transition is explained in terms of the current carrying density of states. These results provide the ways of manipulating the supercurrent in a triple quantum dot system.     

Transport through a triple quantum dot system: Formation of resonance band and its application as a spin filter

A three-quantum-dot spin filter based on nonequilibrium Green?s function technique is proposed with external magnetic flux, Rashba spin orbit interaction, and intradot coulomb interaction taken into consideration. Numerical results indicate a spin filter can be made efficient by adjusting external magnetic flux and Rashba spin orbit interaction. Moreover, the formation of a resonance band is discussed through calculation. It is observed that the possibility of transition from one peak to other three peaks in the conductance spectrum increases with increasing interdot coupling strength.     

Electronic transport in a side-coupled triple quantum dot array

The electronic transport through a side-coupled triple quantum dot array (QDA) is investigated by means of Green function technique within the tight-binding framework. We obtain the formula of the linear conductance of QDA. The linear conductance spectrum is numerically studied. We discuss the feasibility of applying our structure to the electron spin polarized device and calculate the ratio of the spin polarized current flows.     

Nonequilibrium spin-polarized transport through two parallel-coupled quantum dots

Spin-polarized transport through an Aharonov–Bohm ring containing two quantum dots (QDs) in each of its arms is studied by using the nonequilibrium Green’s function technique. We take both the Rashba spin-orbit interaction that exists in one of the QDs, and an inhomogeneous magnetic flux penetrating through the ring, into consideration. It is found that a 100% spin-polarized current can be driven out of the QDs ring, and both the spin directions and the magnitude of the outgoing current can be controlled. The origin of the pure spin-up or spin-down current is interpreted in terms of the spin accumulation in the QDs. This device is realizable by presently available technologies and can be used as a spin filter.     

Spin-dependent transport through quantum dot with inelastic interactions

Using the Keldysh nonequilibrium Green function method, we theoretically investigate the electron transport properties of a quantum dot coupled to two ferromagnetic electrodes, with inelastic electron-phonon interaction and spin flip scattering present in the quantum dot. It is found that the electron-phonon interaction reduces the current, induces new satellite polaronic peaks in the differential conductance spectrum, and at the same time leads to oscillatory tunneling magnetoresistance effect. Spin flip scattering suppresses the zero-bias conductance peak and splits it into two, with different behaviors for parallel and anti-parallel magnetic configuration of the two electrodes. Consequently, a negative tunneling magnetoresistance effect may occur in the resonant tunneling region, with increasing spin flip scattering rate.