Thermal effect analysis on crosstalk and performance of optoelectronic transmitter modules for optical interconnects

This paper presents thermal analysis on crosstalk and performance of optoelectronic transmitter modules and also demonstrates the thermal analysis for efficient heat dissipation for the transmitter modules. The thermal crosstalk model for analysis is based on interconnects parameters for vertically stacked and horizontally packaged optoelectronic transmitter modules. While the analytical expression is used to estimate the thermal critical frequency, f _{crit_th} , above which signals become severely deteriorated, a Teflon-based thermal printed circuit board (PCB) has been designed for packaging the optoelectronic transmitter modules to ensure efficient heat dissipation. The thermal and performance analysis of the packaged modules show that the chips operate at temperatures below the f _{crit_th} , which is apt for reliable data and signal transmission.     

Low-cost,high performance optoelectronic components for antenna remoting

We describe a demonstration of a system in which we incorporated components developed as part of the DARPA Analog Optoelectronic Module Technology Project (TRP). The goal of the TRP program was to bring to manufacturability fiber optic components whose specifications are adequate for both military and commercial applications but whose cost is substantially less than the presently available components. We demonstrated the functionality of the TRP components by using them in a fiber optic link designed to replace one of the coaxial cables that perform antenna remoting in a phased array. For this antenna remoting demonstration, we used an existing linear array at the Makaha Ridge, MIT Lincoln Laboratory Facility. Ordinarily, each subarray is connected to the programmable array computers in the control trailer with coaxial cable. The performance of the array with all coaxial cables connected to each subarray was compared to the case with one of the coaxial cables replaced by the fiber optic link. The results showed no degradation in the performance of the linear array with the TRP fiber optic link replacing one of the remoting coaxial cables.     

A pair of integrated optoelectronic transceiving chips for optical interconnects

In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%.On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.     

Informatics of optoelectronic measurements: Science and innovative industrial technologies

Major scientific achievements and practical results obtained by Prof. V.G. Meledin and his group at the Institute of Thermophysics SB RAS in the field of physical experimental diagnostics and informatics of optoelectronic measurements are revewed. These large-scale and productive results are successfully used in various fields of science and technology. This paper is divided into several sections. These are as follows: Semiconductor Doppler laser anemometry of multiphase flows; Diagnostics in water power engineering and hydraulic turbine machine building, optimization of operation regimes and safety of hydropower plants, dynamic monitoring of the geometry of loaded rotors of super-high-power generating units, methods and systems for laser diagnostics of flows behind hydroturbines to increase efficiency and safety; Laser monitoring of velocities and linear sizes of hot rolled metal in metallurgy. Monitoring of the geometry of railway wheels; investigations and optimization of nonvolatile memory of new generation in molecular electronics; Systems of machine vision and processing of multi-dimensional signals; Information monitoring in the glass industry; Optoelectronic complexes for endoscopy in medicine; Optoelectronic diagnostics of coordinates and shapes of 3D objects in machine building; Information diagnostics in atomic power engineering, 3D velocity fields of heat carrier flow in fuel assembly of power reactors, the geometry of separating lattices of power reactors; Computer visualization: dynamic structure of boiling jets; Informatics of physical experiments, computer videoanemometry of floating bubbles, gravitational-capillary waves and hydrodynamic quasicrystals; Multiplhase borehole flowmeter survey in oil production.     

RIR-MAPLE deposition of conjugated polymers for application to optoelectronic devices

Resonant-infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a promising deposition technology for the fabrication of conjugated polymer-based optoelectronic devices for two primary reasons: (i) the ability to control film morphology, and (ii) the ability to deposit multi-layered heterostructures. This article reviews a variation of RIR-MAPLE that uses emulsified targets of organic solvents and water such that the incident laser wavelength (Er:YAG at 2.9 μm) is resonant with hydroxyl (O–H) bonds in the host matrix, which are absent from the guest material. The novelty of the approach lies in the fact that while most polymers of interest and many compatible solvents do not resonantly absorb the laser energy at 2.9 μm, the emulsion with water enables high-quality, thin-film deposition with minimal photochemical and structural degradation for almost any polymer of interest. In addition, the advantages of emulsion-based RIR-MAPLE for conjugated polymer-based optoelectronic devices are demonstrated by two important studies. First, conjugated polymer films deposited by RIR-MAPLE are shown to have higher hole drift mobilities than films deposited using traditional drop-casting and spin-casting techniques. Second, the unique capability of RIR-MAPLE to enable conjugated polymer-based optical heterostructures is demonstrated by the fabrication and characterization of a multi-layer, polymer distributed Bragg reflector.     

高分辨率灰度投影算法及其在电子稳像中的应用

提出一种用于检测图像运动矢量的高分辨率灰度投影算法。灰度投影算法将图像在水平和垂直方向上的灰度投影数据作为图像特征,获得图像运动信息,一般只能达到一个像元精度。而通过采用相关计算进一步细分灰度投影数据,可以提高图像运动特征位置信息的精度,获得亚像元级的图像运动矢量。实验室摇摆台电子稳像实验结果表明,该方法可以有效提高图像运动矢量的计算精度。     

新型机载光电平台万向架及其关键技术

介绍了国外新型机载光电平台万向架及其涉及的关键技术。结合机载光电系统装备产品发展趋势,叙述了机载光电系统万向架平台技术现状,从万向架平台配置、隔振形式以及稳定精度等方面做了介绍;从任务集成、高精度稳定以及运动补偿等方面分析了机载光电系统对万向架平台提出的更大任务传感器布局空间、更强的运动补偿功能以及更高的环架稳定性能等要求;研究了国外新型的无约束驱动-主动随动和并联式-主动随动机载光电万向架平台创新技术,结果表明,国外新型机载光电平台万向架在任务负载/万向架质量比大于1的基础上,实现了3轴优于5 μrad的稳定性能;最后提出了新型机载光电万向架平台关键支撑技术。     

相关基元信号起伏对一类AR方法阵处理器统计性能的影响

本文讨论了基元信号的振幅及相位起伏对AR方法阵处理器性能的影响,着重研究了均方倒声束图案及定向误差,注意到了参考基元以及基元信号起伏之间相关性的作用。结果表明,起伏一般使均方声束图案展宽以致畸变。相位起伏产生定向误差,其标准方差正比于起伏的标准方差并与基阵基元数有关,起伏之间的相关性对定向误差有重要作用。     

单片机在三线摆实验中的应用

介绍了用8032单片机辅助三线摆实验的原理和方法，并分析了实验结果。     

Noise performance of a white-light optical signal processor

A study of the effects of spatially and partially coherent illumination on the noise performance of an optical processor is presented here. Noise arising from defects in the object plane and the Fourier plane are considered separately. Two important types of noise are analyzed in detail: (a) amplitude noise and (b) ramdom phase noise. The results illustrate that the effects of the object phase noise can be reduced when the requirements on spatial coherence are relaxed. Also, the noise at the Fourier plane can be effectively eliminated when a spatially incoherent light source is employed.     

The application of semiconductor diode lasers to the soldering of electronic components

Work being carried out at the University of Hull into the application of high power laser diodes to the soldering process is described. The commercial availability of semiconductor diode lasers has brought an exciting new soldering tool to the manufacturers of electronics assemblies: trends in electronics assembly are to increasingly high-density interconnections and increasing device functionality. Packages are reducing in size and pin-out counts are increasing. Currently 0.010–0.016 inch lead pitch devices are being introduced by many manufacturers. Lasers can be used with advantage in the soldering of such fine and precise devices and high-power semiconductor laser diodes can be used to build compact, flexible and controllable soldering units. With computer control of the power and duration of the laser energy it is possible to ensure consistent and reliable soldering. To achieve this, however, the various parameters involved in the laser beam-solder assembly interaction need to be carefully defined. This paper reports on our identification of these parameters and the salient design features of an automated diode laser soldering system.     

Morphological stability in epitaxy of semiconductors — application to optoelectronic monolithically integrated structures

A simple selection rule for epitaxial growth techniques, which is based on morphological stability of the substrate surface is proposed. According to this rule a certain growth technique should be used for preparing a specific device structure of a three-dimensional monolithically integrated optical or electronic circuit. The formulae for morphological stability functions for LPE, MO, VPE, and MBE growth techniques are given. Calculations performed for the GaAs/Al _x Ga_1–x As material system by using the linear morphological stability theory of Mullins and Sekerka suggest that from the point of view of morphological stability the most suitable growth technique for fabrication of three-dimensional monolithically integrated optical and electronic device structures is the MBE technique.On leave from the Institute of Physics, Polish Academy of Sciences, PL-02-668 Warsaw, Poland     

The electronic structure of from high energy spectroscopy

We report the results of a detailed study of the occupied and unoccupied electronic structure of dimers of the new heterofullerene by means of photoemission and electron energy-loss spectroscopy. A close similarity is found between the electronic structures of pristine and with an additional broadening of the spectra in the former due to the distortion of the fullerene cage caused both by dimerization and the chemical substitution. Both the occupied and unoccupied electronic states, as well as the interband transitions between them, attest to the high degree of molecular character retained in the solid state. Comparison of the shake-up structures in the and X-ray photoemission spectra confirm that the highest lying occupied states in the heterofullerene have a strong degree of N character, whereas the lowest lying unoccupied states have mainly C character. We also present the optical conductivity of the heterofullerene (derived from the loss function), which shows an optical gap of 1.4 eV, some 0.4 eV smaller than that of . Received: 25 August 1997 / Revised: 22 September 1997 / Accepted: 16 October 1997     

Connecting electronic entropy to empirically accessible electronic properties in high temperature systems

A quantitative theoretical model connecting the thermopower and electronic entropy of molten systems is proposed, the validity of which is tested for semiconductors and metallic materials. The model accurately provides the entropy of mixing for molten semiconductors, as shown for the representative system Te–Tl. Predictions of the electronic entropy of fusion for compounds are in agreement with available data and offer a novel means to identify the correct electrical conductivity model when Hall measurements are not available. Electronic entropy for molten semiconductor and metallic systems is shown to reflect order in the molten and solid state. The model proves accurate at predicting the electronic state entropy contribution to the electronic entropy of mixing.     

大冷量新型蓄冷材料G-M制冷机的研究进展及应用

随着大型低温真空泵、高低温超导器件、核磁共振成像仪、红外探测器、低温光电子学器件的迅速发展,以及作为传统蓄冷材料的铅(Pb)等有害物质的限制使用,对大冷量新型蓄冷材料G-M制冷机的发展提出了迫切的需要。文中主要介绍国内外大冷量G-M制冷机及新型磁性蓄冷材料的最新研究进展和应用情况,并提出了下一步的研究方向。     

光电位置敏感器件的非线性分析及应用

阐述光电位置敏感器件（PSD）的结构、特性和工作原理，并根据PSD的原理和特性分析其产生非线性的几种主要因素。导出PSD的输出信号与光强无关的位置方程。设计出一种低温漂高精度的PSD非线性硬件调制电路。分析了插值算法、神经网络优化法以及解析法等对PSD的非线性进行修正的有效性，并对给出的部分实验数据进行了分析。最后对PSD在光学三角法测量、自动检测以及高精度测量中的应用作了进一步的讨论与展望。     

JEMS- FDTD超大规模并行计算测试

介绍了JEMS- FDTD在大规模并行计算机上进行的并行性能测试,包括网格片大小对性能的影响、单节点MPI/OPENMP混合并行性能、多节点MPI/OPENMP混合并行性能、大规模并行性能等。同时,也给出了一个包含电大尺寸复杂、真实结构模型的算例,并对其进行了计算、分析。测试表明,JEMS- FDTD可高效使用数万个处理器核进行并行计算。大型算例测试表明：JEMS- FDTD可针对电大尺寸复杂、真实结构模型进行有效的计算、分析。     

Carbon Sphere@Nickel sulfide core-shell nanocomposite for high performance supercapacitor application

The Carbon sphere@Nickel sulfide core-shell nanocomposites for different mole ratios of Carbon sphere (0:1; 0.5:1 and 1:1) have been synthesized by a facile low temperature water-bath method without any further calcination. XRD studies on the core-shell nanocomposites show that characteristic peaks associated with rhombohedral phase structure of nickel sulfide have been retained. TEM morphology presents the interlinked core-shell of Carbon sphere@Nickel sulfide composite with grass-leaf dexterity for better ionic diffusion. BET study confirms the formation of mesoporous structure with high surface area. The existence of elements and its electronic configuration is noted through XPS. The electrochemical studies on pristine nickel sulfide and its Carbon sphere@Nickel sulfide core-shell composites reveal that Carbon sphere@Nickel sulfide (0.5:1) exhibits high specific capacitance of 1022?F?g^?1 at a current density of 1?A?g^?1. It shows good cyclic performance even beyond 4000 consecutive charge/discharge cycles at a relatively high current density of 20?A?g^?1 with the ～83% of retention.