Preparation and characterization of transparent TiO2 thin films coated on fused-silica substrates

The transparent TiO₂ thin films coated on fused-SiO₂ substrates were prepared by the sol–gel method and spin-coating technique. Effects of calcination temperature on crystal structure, grain size, surface texture, and light transmittance of the films were investigated. After calcining at 600–1,200 °C, the thicknesses of the TiO₂ films were all around 80 nm and the molecular structures of the films were anatase, even at 1,200 °C. The calcined TiO₂ films had the ultraviolet light (wavelength 200–400 nm) transmittances of ≤29% and the visible light (wavelength 400–800 nm) transmittance of ≥72%. By photocatalytically decomposing the methylene blue (MB) in water, the photocatalytic activities of the TiO₂ thin films were measured and represented using the characteristic time constant (τ) for the MB degradation. While the films prepared at 1,000 and 1,200 °C photodecomposed about 54 mol% of the MB in water (the corresponding τ ≈ 14.8 h) after exposing to 365-nm UV light for 12 h, the films prepared at 600 and 800 °C had smaller τ (≈9.0 h) and photodecomposed about 74 mol% of the MB in water at the same testing conditions.     

Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

Highly transparent In-Ga-Zn oxide (IGZO) thin films were fabricated by spin coating using acetate- and chlorate-based precursors, and thin film transistors (TFTs) were further fabricated employing these IGZO films as the active channel layer. The impact of the post-annealing temperature on the physical properties of IGZO films and performance of IGZO TFTs were investigated. Compared to the nitrate-based IGZO precursor, the chlorate-based precursor increases the phase change temperature of IGZO thin films. The IGZO films changed from amorphous to nanocrystalline phase in an annealing temperature range of 600–700 °C. The transparency is more than 90% in the visible region for IGZO films annealed with temperatures higher than 600 °C. With the increase of post-annealing temperature, the carrier concentration of IGZO film decreases, while the sheet resistance increases firstly and then saturates. The bottom-gate TFT with IGZO channel annealed at 600 °C in oxygen showed the best performance, which was operated in n-type enhancement mode with a field effect mobility of 1.30 cm²/V s, a threshold voltage of 10 V, and a drain current on/off ratio of 2.5 × 10⁴.     

Preparation and characterization of CuAlO2 transparent thin films prepared by chemical solution deposition method

CuAlO₂ thin films were prepared on quartz glass and sapphire substrates by chemical solution deposition method using copper acetate monohydrate, aluminum nitrate nonahydrate and 2-methoxyethanol as starting precursor and solvent. The effects of annealing temperature on the structural, morphological, electrical and optical properties have been studied. Via the optimized annealing treatment condition, CuAlO₂ film annealed at 850 °C in nitrogen flow of 400sccm under atmosphere pressure exhibits the best performance with the lowest room temperature resistivity of 3.6 × 10² Ω cm and the highest optical transmission in the visible region (>70% at around 600 nm wavelength). CuAl₂O₄ and CuO phases, not CuAlO₂ phase are obtained when annealing temperature is lower than 850 °C. However, a further increase of annealing temperature weakens the crystallization quality and deteriorates the surface morphology of CuAlO₂ films as the annealing temperature exceeds 850 °C, leading to an increase in the resistivity and a decrease of the optical transmission in the visible region of CuAlO₂ films.     

Synthesis and luminescence properties of hybrid organic-inorganic transparent titania thin film activated by in-situ formed lanthanide complexes

Stable transparent titania thin films were fabricated at room temperature by combining thenoyltrifluoroacetone (TTFA)-modified titanium precursors with amphiphilic triblock poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) (PEO-PPO-PEO, P123) copolymers. The obtained transparent titania thin films were systematically investigated by IR spectroscopy, PL emission and excitation spectroscopy and transmission electron microscopy. IR spectroscopy indicates that TTFA coordinates the titanium center during the process of hydrolysis and condensation. Luminescence spectroscopy confirms the in-situ formation of lanthanide complexes in the transparent titania thin film. TEM image shows that the in-situ formed lanthanide complexes were homogeneously distributed throughout the whole thin film. The quantum yield and the number of water coordinated to lanthanide metal center have been theoretically determined based on the luminescence data.     

CdS thin film: Synthesis and characterization

CdS thin films have been deposited by dip technique using succinic acid as a complexing agent. The structural characterizations of films have been studied by X-ray diffraction. X-ray diffraction pattern prove crystallinity of the deposited films that crystallize in the cubic phase of CdS. The films show high absorption and band gap value which were found to be 2.58 eV. The specific conductivity of the film was found to be in the order of 10^?7 (Ω cm)^?1.     

Preparation of transparent thin films of silica-surfactant mesostructured materials

Our recent studies on the simple synthetic route to the thin films of the periodic silica-surfactant mesostructured materials are summarized. By depositing the mixtures of the prehydrolyzed tetramethoxysilane and alkyltrimethylammonium salts under anacidic condition on solid supports, transparent thin films of the periodic silica-surfactant mesostructured materials formed. The resulting transparent films have been used as a precursor of the porous silica films and a support for organic photoactive species. Compared with other reported reactions for the silica-surfactant mesostructured materials, this method possesses advantages such as the ease of operation and the possibility to control microstructure and macroscopic morphology.     

Preparation,characterization, and luminescence of (SBA-15) immobilized pepsin

SBA-15 mesoporous silica was synthesized by hydrothermal method and its surface was methylated by treatment with methyltrimethoxysilane. Pepsin was immobilized on the obtained materials giving host-guest composite materials (SBA-15)-pepsin and (methylated SBA-15)-pepsin. The optimum conditions for preparation of these materials were established. Methylated SBA-15 (M-SBA-15) has improved immobilization efficiency of enzyme compared to initial SBA-15 silica. It was shown that with the gradual increase of NaCl solution ionic strength the immobilized amount of enzyme was reduced. Powder X-ray diffraction and Fourier transform infrared spectroscopy showed that the host frameworks in the prepared host-guest composite materials are intact and the ordered structure was retained. Scanning electron microscopic studies revealed fibrous morphologic characteristics of the SBA-15 and the immobilized pepsin composite materials. The average particle diameter of (SBA-15)-pepsin composite was 338 ± 10 and 343 ± 10 nm for (M-SBA-15)-pepsin. The low temperature N₂ adsorption-desorption study at 77 K showed that the pore sizes and specific surface areas of the host-guest composite materials were smaller than those before the introduction of the enzyme, suggesting that the immobilized enzyme occupied a definite position in the host material pore channels. The UV-vis solid diffuse reflectance and luminescence studies showed that the enzyme was successfully immobilized on to the host material and that after the immobilization of enzyme on SBA-15 the conformation of pepsin macromolecule has not been changed.     

Preparation of nano-sized Pt metal particles by photo-assisted deposition (PAD) on transparent Ti-containing mesoporous silica thin film

We have investigated a novel technique for the preparation of nano-sized Pt metals on Ti-containing mesoporous silica (TMS) thin film by photo-assisted deposition (PAD). The transparent TMS thin film was prepared on a quartz plate through sol—gel/spin coating. XRD, UV-Vis and Ti K-edge XAFS measurements revealed the formation of isolated Ti oxide species with a tetrahedral-coordination geometry in the silica framework. Deposition of Pt metal precursor on TMS thin film under UV-light irradiation, followed by reduction with molecular hydrogen, afforded a transparent thin film (Pt/TMS). The formation of highly dispersed nano-sized Pt metals having narrow size distributions was determined by Pd L_III-edge XANES and TEM analysis. The TMS and Pt/TMS thin films have been demonstrated to exhibit a strong hydrophilic property, even before UV irradiation, compared to the common mesoporous silica and TiO₂ thin films. After UV-light irradiation, the contact angle of water droplet on the TMS and Pt/TMS thin films became extremely lower, indicating the appearance of the photo-induced super-hydrophilic property.     

Preparation and characterization of transparent conducting ZnS:Al films

Al-doped ZnS films were deposited using close-spaced evaporation of the powders synthesized by chemical precipitation method. The films were prepared for different Al concentrations in the range 0–10 at.% on glass substrates kept at 300 °C. The effect of Al-doping on ZnS composition, microstructure and optoelectronic properties of as-grown ZnS layers was determined using appropriate techniques. The films were polycrystalline and showed (111) preferred orientation for all the doping concentrations in spite of an additional phase of Al₂S₃ observed at higher dopant levels. The surface morphological studies indicated that the Al incorporation had a considerable effect on the surface roughness of the films. The optical measurements indicated that the optical energy band gap decreased slightly with the increase of dopant concentration without affecting the optical transmittance characteristics significantly. The electrical analysis indicated that the resistivity of the layers changed significantly with the doping concentration in the layers. The change of photoluminescence behaviour of the as-grown ZnS:Al films with dopant concentration was also studied.     

ITO薄膜的制备和性质

本文研究了用喷涂法制备高透明、高电导率的ITO薄膜,建立了简单、适宜的喷涂实验装置,探讨了不同In/Sn重量比、温度等工艺条件对膜透光率、电阻率的影响,对膜的光电性能和结构进行了测试;波长在500—800nm范围内分别在普通玻璃和硼硅酸盐玻璃片上获得了方块电阻达2—5Ω/口,透光率大于80%的ITO膜和方块电阻达6Ω/口,透光率达90—98%的ITO薄膜。     

Preparation and characterization of plasma-polymerized styrene thin films

Plasma-polymerized styrene (PPS) thin films (several hundred to several thousand Å thick) have been prepared under a variety of discharge conditions in a tubular reactor inductively coupled to a radio frequency (13.56 MHz) power supply. Studies have focussed on the correlation of deposited polymer structure, evidenced both at the film surface (via XPS analysis) and in the bulk polymer (via transmission FT–IR analysis) with controllable plasma parameters (coupled rf power, monomer flow rate, monomer pressure). It has been determined that the relative number of phenyl rings incorporated into the film intact is an inverse function of the power per styrene molecule ratio. Polymer deposition rate was found to be a strong function of styrene flow rate and substrate temperature. Plausible elements of the styrene plasma polymerization mechanism will be considered.     

Preparation and characterization of perfluorosulfonic resin/titania hybrid transparent films

Preparation and characterization of perfluorosulfonic resin/titania organic-inorganic hybrid films were presented. The transparent hybrid films were prepared by hydrothermal treatment at low temperature of a mixed solution of tetrabutyl titanate and perfluorosulfonic resin with the help of acetylacetone. The characterization was carried out by SEM,XRD,FT-IR,UV-Vis and TGA. The results showed that the perfluorosulfonic resin/titania hybrid transparent films were composed of titania particles dispersed in the perfluorosulfonic resin matrix very well and the titania was of anatase phase. Its diameter de-creased with increasing weight ratio of titania to perfluorosulfonic resin.     

A transparent boron-nitrogen thin film formed by plasma CVD out of the discharge region

A transparent boron-nitrogen thin film of thickness 550 nm was successfully deposited out of the discharge region by rf plasma CVD. The deposition was performed with diborane (4.8 vol % in N₂) as the reactant gas and argon as the carrier gas by an inductively coupled reactor at a frequency of 13.56 MHz. The transparent films could be obtained at a low pressure of about 30 Pa, at a discharge power level of 30 W, and at room temperature without heating the substrate. The thin films obtained by rf plasma are compared with those obtained by microwave plasma. Both the refractive index and the deposition rate for the films deposited by microwave plasma are discussed according to the deposition conditions.     

MOCVD-derived highly transparent, conductive zinc- and tin-doped indium oxide thin films: precursor synthesis, metastable phase film growth and characterization, and application as anodes in polymer light-emitting diodes

Four diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)(2).(diamine)] can be synthesized in a single-step reaction. Single crystal X-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these new complexes are considerably greater than those of conventional solid zinc metal-organic chemical vapor deposition (MOCVD) precursors. One of the complexes in the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)(N,N'-diethylethylenediamine)zinc, is particularly effective in the growth of thin films of the transparent conducting oxide Zn-In-Sn-O (ZITO) because of its superior volatility and low melting point of 64 degrees C. ZITO thin films with In contents ranging from 40 to 70 cation % (a metastable phase) were grown by low-pressure MOCVD. These films exhibit conductivity as high as 2900 S/cm and optical transparency comparable to or greater than that of commercial Sn-doped indium oxide (ITO) films. ZITO films with the nominal composition of ZnIn(2.0)Sn(1.5)O(z)() were used in fabrication of polymer light-emitting diodes. These devices exhibit light outputs and current efficiencies almost 70% greater than those of ITO-based control devices.     

Preparation and characterization of some unusually transparent poly(dimethylsiloxane) nanocomposites

A technique was developed for preparing poly(dimethylsiloxane) nanocomposites having unusually high transparencies as quantitatively judged by ultraviolet–visible spectroscopy. The method was the in situ generation of silica particles by a two‐step sol–gel procedure in which the required water of hydrolysis was simply absorbed from the air, and the catalyst was generated in situ from a tin salt. Electron microscopy showed that the phase‐separated silica domains were very small (30–50 nm in diameter) and well dispersed, as expected from the transparency of the composites. Stress‐strain measurements in tension indicated that the particles provide very good reinforcement. Ultra‐small‐angle X‐ray scattering data showed that the domain morphology depends strongly on catalyst, but weakly on loading level. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1897–1901, 2003     

A transparent and photo-patternable superhydrophobic film

A transparent superhydrophobic TiO2 film, prepared by spin-coating a TiO2 slurry on a glass substrate and modifying the resultant TiO2 film with fluoroalkylsilane molecules, was patterned by illumination with ultraviolet light through a photomask, producing a superhydrophobic/superhydrophilic surface micropattern with very small superhydrophilic areas, which we were able to selectively fill with alginate hydrogel.     

Investigation of a vapor-deposited thin silica film: morphological and spectral characterization

Surface modification reactions by organosilicon compounds have demonstrated great success in a wide variety of applications. However, they are of limited usefulness in that they only proceed appreciably on surfaces that have an abundance of reactive hydroxyl groups, thus preventing their application to some materials of technological relevance, such as plastics and polymers. A process capable of depositing a surface rich in reactive hydroxyl groups onto a wide variety of substrates could potentially enable the extension of organosilane surface modification reactions to new materials, but conventional processes for depositing oxide layers require temperatures that are too high for most polymers and plastics. It has been shown that silica layers can be deposited from the vapor-phase hydrolysis of tetrachlorosilane at room temperature, but little if any work has been done to characterize the resulting films. In this work, ellipsometry, atomic force microscopy, and Fourier transform infrared spectroscopy are employed to study the characteristics of films formed from this process. Interestingly, very different film morphologies can be obtained by changing key processing parameters. Furthermore, isotopic exchange experiments and dehydration studies show that the surfaces of the silica films obtained by this method are composed entirely of hydrogen-bonded silanol groups and do not exhibit any freely vibrating surface silanol groups, a result that is in contrast with conventionally prepared silica materials. Still, this layer has been shown to behave very similarly to conventional silica materials with respect to surface reactions. Finally, infrared spectral data and contact angle data demonstrate that this method can be employed to deposit silica layers onto poly(methyl methacrylate) and polystyrene surfaces.