Neutron Diffraction Characterization of the Microstrain Fields in the Dilute ZnSe:Co Magnetic Semiconductor Crystals

Physics of the Solid State - The real structure of the bulk Zn1 – xCoxSe (x = 0.01, 0.15) cubic crystals has been characterized by thermal neutron scattering. The data on...     

Fabrication of cosputtered Zn–In–Sn–O films and their applications to organic light-emitting diodes

Zn–In–Sn–O (ZITO) films have been grown by rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto glass substrate. X-ray diffraction analysis shows that the microstructure is amorphous below the substrate temperature of 250 ^°C. The films exhibit sheet resistance as low as 16.7 Ω/□ and optical transparency comparable to grater than that of Sn-doped indium oxide (ITO) films. The work function ranged 5.05–5.19 eV, which is a higher work function compared to ITO (4.7 eV). The fabricated ZITO films are used in fabrication of organic light-emitting diodes (OLEDs). The ZITO anode with the zinc content of 12.5 at.% [Zn/(Zn+In+Sn)] fabricated at 250 ^°C-based OLED shows lower turn-on voltage and higher current density compared to that of ITO-based control device.     

Fabrication of ZnO nanoparticles by laser ablation of sintered ZnO in aqueous solution

Fabrication of ZnO nanoparticles by laser ablation in liquid medium is reported. The possibility of using a sintered ZnO target for the ablation as well as a Zn plate is demonstrated. The appropriate aqueous solution of sodium dodecyl sulfate is found to be 1 mM for ZnO growing. The shape of ZnO nanoparticles is sphere and its diameter is 30∼60 nm. Fourier transform infrared spectra, Raman scattering spectra, and photoluminescence spectra reveal the optical properties of ZnO nanoparticles. Nanoparticles obtained by using ZnO targets show a smaller defect density compared with those by using Zn targets.     

Surfactant-free preparation of ZnO dendritic structures by electrochemical method

Based on electrochemical dissolution of a sacrificial Zn electrode and subsequent electrochemical deposition of dissolved zinc ions, the controllable preparation of hierarchical assembly of Zn or Zn/ZnO nanostructures is studied. If the applied potential is low (here, <1 V), hierarchical assembly of hexagonal Zn planes that resemble leafs are obtained, whereas Zn/ZnO composites consisting of hexagonal Zn planes in core and ZnO buds in shell are synthesized at a high potential (here, >1.5 V). Morphological changes and composition of nanostructures in terms of applied potentials are described in detail. The composition and crystallinity of nanostructures are confirmed by XRD and TEM analysis.     

Evolution of the zinc compound nanostructures in zinc acetate single-source solution

A series of nanostructured zinc compounds with different nanostructures such as nanobelts, flake-like, flower-like, and twinning crystals was synthesized using zinc acetate (Zn(Ac)₂) as a single-source. The evolution of the zinc compounds from layered basic zinc acetate (LBZA) to bilayered basic zinc acetate (BLBZA) and twinned ZnO nano/microcrystal was studied. The low-angle X-ray diffraction spectra indicate the layered spacing is 1.34 and 2.1 nm for LBZA and BLBZA, respectively. The Fourier transform infrared (FTIR) spectra results confirmed that the bonding force of acetate anion with zinc cations decreases with the phase transformation from Zn(Ac)₂ to BLBZA, and finally to LBZA. The OH⁻ groups gradually replaced the acetate groups coordinated to the matrix zinc cation, and the acetate groups were released completely. Finally, the Zn(OH)₂ and ZnO were formed at high temperature. The conversion process from Zn(Ac)₂ to ZnO with release of acetate anions can be described as Zn(Ac)₂ → BLBZA → LBZA → Zn(OH)₂ → ZnO.     

Sputter-deposited ZnO thin films consisting of nano-networks for binder-free dye-sensitized solar cells

ZnO nano-network structures with high porosity were prepared for use in the photoelectrodes of binder-free dye-sensitized solar cells (DSSCs) by DC sputtering and subsequent thermal oxidation. Zn thin films prepared at 100 °C showed nano-network structures with high porosity, while those prepared at 25 °C did not. This was partially attributed to the high mobility of sputter-deposited particles that arrived at the surface of the substrate and partially to a supersaturation mechanism. The prepared nano-network Zn was successfully transformed to ZnO without a morphological change via subsequent annealing in air. The power conversion efficiency of DSSCs based on the ZnO nano-network structures exhibited 10 times higher efficiency than those based on ZnO film prepared at 25 °C because of its large surface area for adsorption of dye molecules. The thickness of the ZnO nano-network structures increased linearly at 10 μm h^?1 as a function of sputter time. As the film thickness increased, the power conversion efficiency of DSSCs increased from 1.09% to 1.82%.     

Ordered ultra thin ZnO films on metal substrate

Ultra thin ZnO films were prepared on metal Mo(1 1 0) substrate under ultrahigh vacuum conditions either by depositing Zn in 10⁻⁵ Pa oxygen or by oxidizing pre-deposited Zn films. The films were characterized in situ by various surface analytical techniques, including Auger electron spectroscopy, X-ray and ultraviolet photoelectron spectroscopies, low energy electron diffraction and high resolution electron energy loss spectroscopy. The results indicate that a long-range ordered and stoichiometric ZnO films are formed along its [0 0 0 1] direction. The annealing experiments show that as-prepared ZnO films are thermal stable until 800 K. This study provides constructive information to further understand the growth mechanism of ZnO films on different substrates.     

Origin of the Concentration Quenching of Luminescence in Zn2SiO4:Mn Phosphors

Physics of the Solid State - The analysis of the unified series of single-phase Zn2&nbsp;–&nbsp;2xMn2xSiO4 samples (x ≤ 0.2) has provided the possibility to determine the...     

The growth of ZnO:Ga:Cu as new TCO film of advanced electrical,optical and structural quality

Because of having similarities in many physical as well as chemical properties to those of Zn, Cu has been strategically used as an effective dopant e.g., Al, Ga, F, etc., to change the optical, electrical and the micro-structural properties of ZnO thin films for obtaining its favorable opto-electronic performance as a transparent conducting oxide suitable for devices. Present study demonstrates the growth of transparent conducting ZnO:Ga:Cu thin films, by low power RF magnetron sputtering at a low substrate temperature (100 °C). Highly crystalline ZnO:Ga:Cu film with preferred c-axis orientation has been obtained demonstrating a high magnitude of transmission ~85% in the visible range and a high electrical conductivity ~40 S cm^–1, facilitated by large crystallite size (~29 nm), introducing reduced grain boundary scattering. XPS O 1S spectrum reveals the presence of a significant fraction of oxygen atoms effectively increasing the optical transparency. Incorporation of Ga and Cu ions into the ZnO matrix promotes violation of the local translational symmetry as suggested by the relaxation of Raman selection rules for the network, evident by the presence of strong (B₁^high–B₁^low) modes which are typically Raman inactive. The consequences of Cu doping has been compared with identically prepared ZnO and ZnO:Ga films.     

Structural Features of Phosphates Ca9 – xMxDy(PO4)7 (M = Zn2+ or Mg2+)

Physics of the Solid State - Phosphate solid solutions based on the whitlockite family Ca9&nbsp;–&nbsp;xMxDy(PO4)7 (M = Zn2+ or Mg2+) have been obtained. The samples have been...     

Site-specific interaction of H2O with ZnO single-crystal surfaces studied by thermal desorption and UV photoelectron spectroscopy

The adsorption and condensation of H₂O(D₂O) on ZnO(101&#x0304;0), (0001)Zn and (0001&#x0304;)O surfaces was investigated by means of thermal desorption (TDS) and UV photoelectron spectroscopy (UPS). The clean ZnO single-crystal surfaces were prepared by Ar-ion sputtering and annealing and characterised by Auger electron spectroscopy, LEED, UPS and work-function measurements. On all three surfaces six different adsorption states were found. In the monolayer regime there is a stronger bonding to Zn sites (desorption temperature 340 K) than to O sites (190 K), The bonding to the Zn sites seems to be accompanied by some clustering. Before the chemisorption layer is completed a first ice state is found whose desorption temperature shifts from 162 to 168 K with increasing exposures. At higher exposures the multilayer ice state is found at 152 K. On the (0001&#x0304;)O face defect-induced features were identified. The water lone-pair orbital 1b₁, whose energy falls between the O p and the Zn 3d emission of the substrate and which is known to show bonding shifts, was analysed using angle-resolved UPS. In the monolayer, the main chemisorption states are found at E_B^V(1b₁) = ?9.6 eV for the (0001)Zn face and at ? 10.6 eV for the (0001&#x0304;)O face and are compared with the multilayer ice emission at 1&#x0304;1.1 eV. The difference in binding energies shows the same trend as the TDS data. For the (101&#x0304;0) face the 1b₁ emission is very broad, indicating some overlap between different states.     

Effect of K-doping on structural and optical properties of ZnO thin films

In this work, K-doped ZnO thin films were prepared by a sol–gel method on Si(111) and glass substrates. The effect of different K-doping concentrations on structural and optical properties of the ZnO thin films was studied. The results showed that the 1 at.% K-doped ZnO thin film had the best crystallization quality and the strongest ultraviolet emission ability. When the concentration of K was above 1 at.%, the crystallization quality and ultraviolet emission ability dropped. For the K-doped ZnO thin films, there was not only ultraviolet emission, but also a blue emission signal in their photoluminescent spectra. The blue emission might be connected with K impurity or/and the intrinsic defects (Zn interstitial and Zn vacancy) of the ZnO thin films.     

From Zn microspheres to hollow ZnO microspheres: A simple route to the growth of large scale metallic Zn microspheres and hollow ZnO microspheres

Large scale metallic Zn microspheres and hollow ZnO microspheres are synthesized by thermal evaporation and vapor transport by heating a ZnO/graphite mixture at 1000 °C. Firstly, metallic Zn microspheres are fabricated with diameters in the range of 1–10 μm. The Zn microspheres are then annealed at 600 °C in air, which form hollow semiconducting ZnO microspheres. EDX and XRD spectra reveal that the oxidized material is indeed ZnO. Room temperature photoluminescence spectra of the oxidized material show a sharp peak at 380 nm and a wider broad peak centered at 490 nm. This growth mechanism is discussed and further investigated for other metallic and metal oxide microstructures.     

Decomposition of chlorinated volatile organic compounds (CVOCs) using NTP coupled with TiO2/GAC,ZnO/GAC,and TiO2–ZnO/GAC in a plasma-assisted catalysis system

No study was found in the literature on the catalytic effect of TiO₂/GAC (Granular activated carbon), ZnO/GAC, and TiO₂–ZnO/GAC combined with non-thermal plasma (NTP) for the decomposition of chlorinated volatile organic compounds (CVOCs) in gas streams. In the present study, this catalytic NTP process was investigated to examine the effect of specific input energy (SIE), initial concentration, as well as residence time on the removal efficiency (RE) of CVOCs in a corona discharge reactor energized by a high frequency pulsed power supply. A dip-coating sol–gel impregnation technique was used to coat TiO₂, ZnO, and mixture of TiO₂–ZnO nanoparticles on GAC, which were then combined with NTP in a two-stage configuration. The results revealed that the efficacy of the catalysts was in the order TiO₂–ZnO/GAC ≅ TiO₂/GAC > ZnO/GAC with chloroform feeding, while when chlorobenzene introduced, the order changed to TiO₂–ZnO/GAC > ZnO/GAC > TiO₂/GAC. A significant enhancement was observed with RE as catalysts coupled with NTP in all cases and a RE of 100% was achieved in the presence of both TiO₂/GAC and TiO₂–ZnO/GAC at SIE of ca. 400 J L⁻¹. Considerable improvement was also noticed for coupling TiO₂ and ZnO in both efficiency and catalyst life time.     

White-light emission from annealed ZnO:Si nanocomposite thin films

As grown ZnO:Si nanocomposites of different compositional ratios were fabricated by thermal evaporation techniques. These films were subjected to post-deposition annealing under high vacuum at a temperature of 250 °C for 90 min. The photoluminescence (PL) spectra of annealed samples have shown marked improvements both in terms of intensity and broadening. Structural and Raman analyses show formation of a Zn–Si–O shell around ZnO nanoclusters wherein on heating Zn₂SiO₄ compound forms resulting in huge UV, orange and red peaks at 310, 570 and 640 nm in PL. The new emissions due to Zn₂SiO₄ completes white light spectrum. The study not only suggests that 1:2 ratio is the best suited for material manipulation but also shows process at the interface of ZnO nanoclusters and silicon matrix leads to new PL emissions.     

Ultrasound-assisted synthesis of poly(MMA–co–BA)/ZnO nanocomposites with enhanced physical properties

The present study reports synthesis and characterization of poly(MMA–co–BA)/ZnO nanocomposites using ultrasound-assisted in-situ emulsion polymerization. Methyl methacrylate (MMA) was copolymerized with butyl acrylate (BA), for enhanced ductility of copolymer matrix, in presence of nanoscale ZnO particles. Ultrasound generated strong micro-turbulence in reaction mixture, which resulted in higher encapsulation and uniform dispersion of ZnO (in native form – without surface modification) in polymer matrix, as compared to mechanical stirring. The nanocomposites were characterized for physical properties and structural morphology using standard techniques such as XRD, FTIR, particle size analysis, UV–Visible spectroscopy, electrical conductivity, TGA, DSC, FE-SEM and TEM. Copolymerization of MMA and BA (in presence of ZnO) followed second order kinetics. Thermal stability (T_10% = 324.9 °C) and glass transition temperature (T_g = 67.8 °C) of poly(MMA-co-BA)/ZnO nanocomposites showed significant enhancement (35.1 °C for 1 wt% ZnO and 15.7 °C for 4 wt% ZnO, respectively), as compared to pristine poly(MMA–co–BA). poly(MMA–co–BA)/ZnO (5 wt%) nanocomposites possessed the highest electrical conductivity of 0.192 μS/cm and peak UV absorptivity of 0.55 at 372 nm. Solution rheological study of nanocomposites revealed enhancement in viscosity with increasing ZnO loading. Maximum viscosity of 0.01 Pa-s was obtained for 5 wt% ZnO loading.     

A study of electrical enhancement of polycrystalline MgZnO/ZnO bi-layer thin film transistors dependence on the thickness of ZnO layer

A polycrystalline MgZnO/ZnO bi-layer was deposited by using a RF co-magnetron sputtering method and the MgZnO/ZnO bi-layer TFTs were fabricated on the thermally oxidized silicon substrate. The performances with varying the thickness of ZnO layer were investigated. In this result, the MgZnO/ZnO bi-layer TFTs which the content of Mg is about 2.5 at % have shown the enhancement characteristics of high mobility (6.77–7.56 cm² V⁻¹ s⁻¹) and low sub-threshold swing (0.57–0.69 V decade⁻¹) compare of the ZnO single layer TFT (μ_FE = 5.38 cm² V⁻¹ s⁻¹; S.S. = 0.86 V decade⁻¹). Moreover, in the results of the positive bias stress, the ΔV_on shift (4.8 V) of MgZnO/ZnO bi-layer is the 2 V lower than ZnO single layer TFT (ΔV_on = 6.1 V). It reveals that the stability of the MgZnO/ZnO bi-layer TFT enhanced compared to that of the ZnO single layer TFT.     

Fabrication of ZnO nanowires through thermal heating of metallic Zn by solar energy

ZnO nanowires were synthesized in a short time of a few seconds through a simple thermal evaporation of Zn powder using solar energy under air atmosphere. The Zn powder was heated by focusing sunlight on the Zn powder employing a magnifying lens. This strategy heated Zn to its evaporation temperature resulting in its oxidation in air. This procedure formed ZnO nanowires of ∼10 nm diameter and ∼2 μm length. As only Zn powder without any catalysts was used as the source material, it is suggested that the growth of the nanowires occurs through a vapor-solid mechanism. The cathodoluminescence (CL) spectrum from such ZnO nanowires showed strong ultraviolet emission indicating their highly crystalline quality besides good optical properties.     

Improved efficiencies of hybrid organic light‐emitting diodes using efficient electron injection layer

Hybrid organic‐inorganic light‐emitting diodes were developed with pristine ZnO (2.0 wt%) and Cu‐doped ZnO (2.0 wt%) as electron injection layer and iridium(III)‐bis‐2‐(4‐fluorophenyl)‐1‐(naphthalen‐1‐yl)‐1H‐phenanthro[9,10‐d]imidazole (acetylacetonate) [Ir(fpnpi)₂ (acac)] as green emissive layer (521 nm). The pristine ZnO and Cu‐doped ZnO are deposited at indium tin oxide cathode and emissive layer interface. The electroluminescent performances increased by electron injection layer–Cu‐doped ZnO compared with ZnO‐based device because Cu‐doped ZnO injects electron efficiently result in balanced h⁺ ? e^? recombination in emissive layer than ZnO‐based device. The Cu‐doped ZnO (2.0 %) device shows luminance (L) of 10 982 cd/m² at 23.0 V (ZnO, 1450 cd/m² at 23.0 V).     

Ti-incorporated ZnO films synthesized via magnetron sputtering and its optical properties

Undoped and Ti-doped ZnO films were deposited using radio frequency reactive magnetron sputtering at various sputtering powers. The crystal structures, surface morphology, chemical state and optical properties in Ti-doped ZnO films were systematically investigated via X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and ultraviolet visible (UV–Vis) spectrophotometer. Results indicated that titanium atoms may replace zinc atomic sites substitutionally or incorporate interstitially in the hexagonal lattices, and a moderate quantity of Ti atoms exist in the form of sharing the oxygen with Zn atoms and hence improve the (0 0 2) orientation. The photoluminescence (PL) spectra of the Ti-doped ZnO films contain one main blue peak, whose intensity increased with the increase of sputtering power. Our results indicated that a higher compressive stress in Ti-doped ZnO films results in a lower optical band gap and a lower transmittance, and various Ti impurities can affect the concentration of the interstitial Zn and O vacancies.