Spin effects in edge transport in two-dimensional topological insulators

Investigations of topological insulators, which are two- and three-dimensional systems with a gap in the bulk spectrum and topologically protected gapless edge states, are of considerable fundamental interest at present. The experiments confirming the presence of the edge states in two-dimensional systems with inverted bands and problems of determining the nature of such states in these experiments are reviewed. Special attention is focused on spin-sensitive experiments since the topological edge states have a nontrivial spin structure.     

Engineering near-surface electron states in three-dimensional topological insulators

Using the continual model of a semi-infinite three dimensional (3D) topological insulator (TI) we study the effect of the surface potential (SP) on the formation of helical topological states near the surface. The results reveal that spatial profile and spectrum of these states strongly depend on the SP type and strength. We pay special attention to the 3D TI substrate/non-magnetic insulating overlayer system to illustrate the principles of the topological near-surface states engineering.     

On a symmetry topological classification of edge states in crystalline spin-Hall insulators with the time reversal invariance

Symmetry analysis reveals all types of singularities of the edge states in two-dimensional systems with a boundary (2D → 1D systems), which are invariant under time reversal. Symmetry reasons also provide the matching condition for material functions parameterizing the Hamiltonian at various points of the Brillouin zone. The unified parameterization of the Hamiltonian makes it possible to construct the mapping of trajectories closed in the quasimomentum k in the Brillouin zone into the SU(2) topological group. There are only two equivalence classes of Hamiltonians, which are given by the elements of the first fundamental group . The first type of surface states corresponds to a normal insulator and the second type corresponds to a topological spin-Hall insulator. Comparison with the classification based on the Pfaffian method is performed.     

Elastic scattering of surface states on three-dimensional topological insulators

Topological insulators as a new type of quantum matter materials are characterized by a full insulating gap in the bulk and gapless edge/surface states protected by the time-reversal symmetry. We propose that the interference patterns caused by the elastic scattering of defects or impurities are dominated by the surface states at the extremal points on the constant energy contour. Within such a formalism, we summarize our recent theoretical investigations on the elastic scattering of topological surface states by various imperfections, including non-magnetic impurities, magnetic impurities, step edges, and various other defects, in comparison with the recent related experiments in typical topological materials such as BiSb alloys, Bi2Te3, and Bi2Se3 crystals.     

Anomalous Josephson current via Majorana bound states in topological insulators

We propose a setup involving Majorana bound states (MBS) hosted by a vortex on a superconducting surface of a 3D topological insulator (TI). We consider a narrow channel drilled across a TI slab with both sides covered by s-wave superconductor. In the presence of a vortex pinned to such a channel, it acts as a ballistic nanowire connecting the superconducting surfaces, with a pair of MBS localized in it. The energies of the MBS possess a 4π-periodic dependence on the superconductive phase difference φ between the surfaces. It results in the appearance of an anomalous term in the current-phase relation I(a)(φ) for the supercurrent flowing along the channel between the superconductive surfaces. We have calculated the shape of the 4π-periodic function I(a)(φ), as well as the dependence of its amplitude on temperature and system parameters.     

Double topological edge states investigation in sonic metamaterials

We investigate the topologically protected sound propagation in sonic metamaterials, analogous to quantum spin hall effect (QSHE). The sonic metamaterials consist of circular rods and meta-molecules arranged in air with a honeycomb-lattice. The on-demand inversion in topological phase can be achieved by two ways of scatterer controls at locally resonant frequency and Bragg frequency. The Helmholtz resonators in the structure are contributed to the formation of subwavelength double Dirac cones which are more likely to appear due to local resonance enhancement with more number of resonators. By combining two sonic metamaterials with different topological invariants, we demonstrate the robust sound propagation and pseudospin-dependent one-way acoustic propagation at the interface. Experimental measurement of the topologically protected acoustic wave transmission matches well with the simulation result.     

Gapless interface states between topological insulators with opposite Dirac velocities

The Dirac cone on a surface of a topological insulator shows linear dispersion analogous to optics and its velocity depends on materials. We consider a junction of two topological insulators with different velocities, and calculate the reflectance and transmittance. We find that they reflect the backscattering-free nature of the helical surface states. When the two velocities have opposite signs, both transmission and reflection are prohibited for normal incidence, when a mirror symmetry normal to the junction is preserved. In this case we show that there necessarily exist gapless states at the interface between the two topological insulators. Their existence is protected by mirror symmetry, and they have characteristic dispersions depending on the symmetry of the system.     

A honeycomb lattice model simulating the surface states of topological insulators

A honeycomb lattice model exhibiting the quantum spin-Hall effect is proposed, where the low-energy properties of the electrons are mainly determined by the energy spectrum in the vicinity of the Γ point, for suitable parameters. The nontrivial topology of the energy bands is revealed by calculating the Chern numbers, Berry curvature distribution, and edge state spectrum. We further show that in the continuum limit, the model Hamiltonian is equivalent to the effective model for the surface states in thin films of three-dimensional topological insulators. As a consequence, this lattice model provides a useful tool for numerical simulation of the physical properties of the surface states.     

Pseudo topological insulators

We predict pseudo topological insulators that have been previously overlooked. We determine some conditions under which robust pseudo topological edge states appear and illustrate our idea on the Su–Schrieffer–Heeger (SSH) model with extra chiral symmetry breaking potentials. We discuss that pseudo topological insulating phase transition occurs without band gap closing.     

Emergent Z_2 topological invariant and robust helical edge states in two-dimensional topological metals

In this work, we study the effects of disorder on topological metals that support a pair of helical edge modes deeply embedded inside the gapless bulk states. Strikingly, we predict that a quantum spin Hall(QSH) phase can be obtained from such topological metals without opening a global band gap. To be specific, disorder can lead to a pair of robust helical edge states which is protected by an emergent Z_2 topological invariant, giving rise to a quantized conductance plateau in transport measurements. These results are instructive for solving puzzles in various transport experiments on QSH materials that are intrinsically metallic. This work also will inspire experimental realization of the QSH effect in disordered topological metals.     

Z2拓扑不变量与拓扑绝缘体

文章回顾了几种Z2拓扑数的计算方法,并详细介绍了一种用非阿贝尔贝里联络表示绝缘体Z2不变量的计算方法.这种方法可以确定出一般能带绝缘体的拓扑性质,而不需要限定波函数的规范.利用这种新方法,文章作者计算了二维石墨烯(graphene)系统的Z2拓扑数,得到了和以前研究相一致的结论.     

Z_2拓扑不变量与拓扑绝缘体

文章回顾了几种Z2拓扑数的计算方法,并详细介绍了一种用非阿贝尔贝里联络表示绝缘体Z2不变量的计算方法.这种方法可以确定出一般能带绝缘体的拓扑性质,而不需要限定波函数的规范.利用这种新方法,文章作者计算了二维石墨烯(graphene)系统的Z2拓扑数,得到了和以前研究相一致的结论.     

CO oxidation facilitated by robust surface states on Au-covered topological insulators

Surface states--the electronic states emerging as a solid material terminates at a surface--are usually vulnerable to contaminations and defects. The robust topological surface state(s) (TSS) on the three-dimensional topological insulators provide a perfect platform for exploiting surface states in less stringent environments. Employing first-principles density functional theory calculations, we demonstrate that the TSS can play a vital role in facilitating surface reactions by serving as an effective electron bath. We use CO oxidation on gold-covered Bi(2)Se(3) as a prototype example, and show that the robust TSS can significantly enhance the adsorption energy of both CO and O(2) molecules, by promoting different directions of static electron transfer. The concept of TSS as an electron bath may lead to new design principles beyond the conventional d-band theory of heterogeneous catalysis.     

Floquet bands and photon-induced topological edge states of graphene nanoribbons

Floquet theorem is widely used in the light-driven systems. But many 2 D-materials models under the radiation are investigated with the high-frequency approximation, which may not be suitable for the practical experiment. In this work,we employ the non-perturbative Floquet method to strictly investigate the photo-induced topological phase transitions and edge states properties of graphene nanoribbons under the light irradiation of different frequencies(including both low and high frequencies). By analyzing the Floquet energy bands of ribbon and bulk graphene, we find the cause of the phase transitions and its relation with edge states. Besides, we also find the size effect of the graphene nanoribbon on the band gap and edge states in the presence of the light.     

On the photon-drag effect of photocurrent of surface states of topological insulators

The photocurrent of surface states of topological insulator due to photon-drag effect is computed, being based on pure Dirac model of surface states. The scattering by disorder is taken into account to provide a relaxation mechanism for the photocurrent. The Keldysh–Schwinger formalism has been employed for the systematic calculation of photocurrent. The helicity dependent photocurrent of sizable magnitude transverse to the in-plane photon momentum is found, which is consistent with experimental data. Other helicity independent photocurrents with various polarization states are also calculated.     

Model characterization of gapless edge modes of topological insulators using intermediate Brillouin-zone functions

We characterize gapless edge modes in translation invariant topological insulators. We show that the edge mode spectrum is a continuous deformation of the spectrum of a certain gluing function defining the occupied state bundle over the Brillouin zone. Topologically nontrivial gluing functions, corresponding to nontrivial bundles, then yield edge modes exhibiting spectral flow. We illustrate our results for the case of chiral edge states in two-dimensional Chern insulators, as well as helical edges in quantum spin Hall states.     

Switching spin and charge between edge states in topological insulator constrictions

We show how the coupling between opposite edge states, which overlap in a constriction made of the topological insulator mercury telluride (HgTe), can be employed both for steering the charge flow into different edge modes and for controlled spin switching. Unlike in a conventional spin transistor, the switching does not rely on a tunable Rashba spin-orbit interaction, but on the energy dependence of the edge state wave functions. Based on this mechanism, and supported by extensive numerical transport calculations, we present two different ways to control spin and charge currents, depending on the local gating of the constriction, resulting in a high fidelity spin transistor.     

Dephasing effects in topological insulators

Topological insulators, a class of typical topological materials in both two dimensions and three dimensions,are insulating in bulk and metallic at surface. The spin-momentum locked surface states and peculiar transport properties exhibit promising potential applications on quantum devices, which generate extensive interest in the last decade. Dephasing is the process of the loss of phase coherence, which inevitably exists in a realistic sample. In this review, we focus on recent progress in dephasing effects on the topological insulators. In general, there are two types of dephasing processes: normal dephasing and spin dephasing. In two-dimensional topological insulators, the phenomenologically numerical investigation shows that the longitudinal resistance plateaus is robust against normal dephasing but fragile with spin dephasing. Several microscopic mechanisms of spin dephasing are then discussed. In three-dimensional topological insulators, the helical surface states exhibit a helical spin texture due to the spin-momentum locking mechanism. Thus, normal dephasing has close connection to spin dephasing in this case, and gives rise to anomalous “gap-like” feature. Dephasing effects on properties of helical surface states are investigated.