Magnetic order in thin films of the heavy fermion superconductor UNi<Subscript>2</Subscript>Al<Subscript>3</Subscript>

Resonant magnetic X-ray scattering was employed to investigate the magnetic state of epitaxial a^* oriented thin films of the heavy fermion superconductor UNi₂Al₃. The observed incommensurate propagation vector as well as the Ne l temperature correspond to those of bulk samples. The 1200 film shows magnetic order with a correlation length >800 ? parallel to the growth axis. Out of the three possible magnetic domains the one with the moment direction perpendicular to the film surface is not realized.     

Investigation of the field-tuned quantum critical point in CeCoIn<Subscript>5</Subscript>

The main properties and the type of the field-tuned quantum critical point in the heavy-fermion metal CeCoIn₅ that arise upon application of magnetic fields B are considered within a scenario based on fermion condensation quantum phase transition. We analyze the behavior of the effective mass, resistivity, specific heat, charge, and heat transport as functions of applied magnetic fields B and show that, in the Landau Fermi liquid regime, these quantities demonstrate critical behavior, which is scaled by the critical behavior of the effective mass. We show that, in the high-field non-Fermi liquid regime, the effective mass exhibits very specific behavior, M*～ T^{? 2/3}, and the resistivity demonstrates T^2/3 dependence. Finally, at elevated temperatures, it changes to M*～T^?1/2, while the resistivity becomes linear in T. In zero magnetic field, the effective mass is controlled by temperature T and the resistivity is also linear in T. The obtained results are in good agreement with recent experimental facts.     

Response of the electrical resistivity and magnetoresistance of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> films to biaxial tensile strains

The structure, electrical resistivity, and magnetoresistance of (50-nm)La_0.67Ca_0.33MnO₃ epitaxial films grown on a [(80 nm)Ba_0.25Sr_0.75TiO₃/La_0.3Sr_0.7Al_0.65Ta_0.35O₃] substrate with a substantial positive lattice misfit have been studied. The tensile biaxial strains are shown to account for the increase in the cell volume and in the relative concentration of Mn⁺³ ions in the manganite films as compared to those for the original material (33%). The peak in the temperature dependence of the resistivity ρ of La_0.67Ca_0.33MnO₃ films was shifted by 30–35 K toward lower temperatures relative to its position in the ρ(T) graph for a manganite film grown on (001)La_0.3Sr_0.7Al_0.65Ta_0.35O₃. For T < 150 K, the temperature dependences of ρ of La_0.67Ca_0.33MnO₃/Ba_0.25Sr_0.75TiO₃/La_0.3Sr_0.7Al_0.65Ta_0.35O₃ films could be well fitted by the relation ρ = ρ₀ + ρ₁T^4.5, where ρ₀ = 0.35 mΩ cm and the coefficient ρ₁ decreases linearly with increasing magnetic field. In the temperature interval 4.2–300 K, the magnetoresistance of manganite films was within the interval 15–95% (μ₀H = 5 T).     

High-precision measurements of the compressibility and the electrical resistivity of bulk <Emphasis Type="Italic">g</Emphasis>-As<Subscript>2</Subscript>Te<Subscript>3</Subscript> glasses at a hydrostatic pressure up to 8.5 GPa

High-precision studies of the volume and the electrical resistivity of g-As₂Te₃ glasses at a high hydrostatic pressure up to 8.5 GPa at room temperature are performed. The glasses exhibit elastic behavior in compression only at a pressure up to 1 GPa, and a diffuse structural transformation and inelastic density relaxation (logarithmic in time) begin at higher pressures. When the pressure increases further, the relaxation rate passes through a sharp maximum at 2.5 GPa, which is accompanied by softening the relaxing bulk modulus, and then decreases, being noticeable up to the maximum pressure. When pressure is relieved, an unusual inflection point is observed in the baric dependence of the bulk modulus near 4 GPa. The polyamorphic transformation is only partly reversible and the residual densification after pressure release is 2%. In compression, the electrical resistivity of the g-As₂Te₃ glasses decreases exponentially with increasing pressure (at a pressure up to 2 GPa); then, it decreases faster by almost three orders of magnitude in the pressure range 2–3.5 GPa. At a pressure of 5 GPa, the electrical resistivity reaches 10^–3 Ω cm, which is characteristic of a metallic state; this resistivity continues to decrease with increasing pressure and reaches 1.7 × 10^–4 Ω cm at 8.1 GPa. The reverse metal–semiconductor transition occurs at a pressure of 3 GPa when pressure is relieved. When the pressure is decreased to atmospheric pressure, the electrical resistivity of the glasses is below the initial pressure by two–three orders of magnitude. Under normal conditions, both the volume and the electrical resistivity relax to quasi-equilibrium values in several months. Comparative structural and Raman spectroscopy investigations demonstrate that the glasses subjected to high pressure have the maximum chemical order. The glasses with a higher order have a lower electrical resistivity. The polyamorphism in the As₂Te₃ glasses is caused by both structural changes and chemical ordering. The g-As₂Te₃ compound is the first example of glasses, where the reversible metallization under pressure has been studied under hydrostatic conditions.     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

Normal-state electrical resistivity and superconducting magnetic penetration depth in Eu<Subscript>0.5</Subscript>K<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>As<Subscript>2</Subscript> polycrystals

We report measurements of the temperature dependence of the electrical resistivity, ρ(T), and magnetic pen-etration depth, λ(T), for polycrystalline samples of Eu_0.5K_0.5Fe₂As₂ with T _c = 31 K. ρ(T) follows a linear temperature dependence above T _c and bends over to a weaker temperature dependence around 150 K. The magnetic penetration depth, determined by radio frequency technique displays an unusual minimum around 4 K which is associated with short-range ordering of localized Eu³⁺ moments. The article is published in the original.     

Structural and electrical properties of KCa<Subscript>2</Subscript>Nb<Subscript>5</Subscript>O<Subscript>15</Subscript> ceramics

A polycrystalline sample of KCa₂Nb₅O₁₅ with tungsten bronze structure was prepared by a mixed oxide method at high temperature. A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound shows a uniform grain distribution throughout the surface of the sample. Studies of temperature variation on dielectric response at various frequencies show that the compound has a transition temperature well above the room temperature (i.e., 105°C), which was confirmed by the polarization measurement. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500°C) and frequency (10²–10⁶ Hz) range that showed only bulk contribution and non-Debye type relaxation processes in the material. The activation energy of the compound (calculated from both the loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers. A possible ‘hopping’ mechanism for electrical transport processes in the system is evident from the modulus analysis. A plot of dc conductivity (bulk) with temperature variation demonstrates that the compound exhibits Arrhenius type of electrical conductivity.      

Preparation of MgB<Subscript>2</Subscript>/Fe superconductor wire by electrical self-heating

MgB₂/Fe wires were prepared by electrical self-heating of in situ powder-in-tube wires for the first time at ambient conditions. Characterization of the wires processed at 750 °C, 800 °C and 850 °C for 15 min by XRD, SEM, ϱ–T, susceptibility and J_C measurements shows that the MgB₂ formed is of high quality particularly with respect to phase purity and transport J_C. The method considerably reduces the overall energy consumption vis-à-vis the production cost, simplifies the complexity of the fabrication procedure and is promising for manufacture of high-quality MgB₂ superconducting wires. PACS 74.70.Ad; 74.62.Bf; 74.25.Fy; 74.25.Ha; 81.20.Hy     

Pressure dependence of the superconducting state parameters of a binary Ca<Subscript>70</Subscript>Mg<Subscript>30</Subscript> metallic glass superconductor

Theoretical computation of the pressure dependence of superconducting state parameters of a binary Ca₇₀Mg₃₀ metallic glass has been performed using the model potential formalism. Explicit expressions have been derived for the volume dependence of the electron-phonon coupling strength λ and the Coulomb pseudopotential μ*, considering the variation of the Fermi momentum k _F and Debye temperature θ_D with volume. Well-known Ashcroft’s empty core model pseudopotential and five different types of the local-field correction functions, namely, Hartree, Taylor, Ichimaru-Utsumi, Farid et al. and Sarkar et al. have been used for obtaining pressure dependence of transition temperature T _C and the logarithmic volume derivative Φ of the effective interaction strength N ₀ V for the metallic glass superconductor. It has been obtained that T _C of Ca₇₀Mg₃₀ metallic glass decreases rapidly with increasing pressure up to 60% decrease in the volume, for which the μ* and Φ curves show a linear nature. The superconducting phase disappears at about 60% decrease in the volume.     

Fluctuation-induced conductivity and dimensionality in the new Y-based Y<Subscript>3</Subscript>Ba<Subscript>5</Subscript>Cu<Subscript>8</Subscript>O<Subscript>18-</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> superconductor

The fluctuation conductivity measurement on the new Y-based Y₃Ba₅Cu₈O_{18- x} superconductor is presented. The dimensional crossovers between different temperature regimes were analyzed with Aslamazov-Larkin (AL) theory and a good quantitative agreement was achieved for the experimental data. For our data, the mean field regime is dominated by 2D AL fluctuations. Our results reveal the occurrence of critical fluctuation regime in consistent with the prediction of the full dynamic 3D XY model. We found the dynamical critical exponent to be z = 3.4 for our data. We analyzed also the excess conductivity data by Hikami-Larkin theory and estimated the phase relaxation time.     

Compression behavior of Zr<Subscript>41</Subscript>Ti<Subscript>14</Subscript>Cu<Subscript>12.5</Subscript>Ni<Subscript>10</Subscript>Be<Subscript>22.5</Subscript> bulk metallic glass up to 24 GPa

The compression of a Zr₄₁Ti₁₄Cu_12.5Ni₁₀Be_22.5 bulk metallic glass (BMG) is investigated at room temperature up to 24 GPa using in-situ high pressure energy dispersive X-ray diffraction with a synchrotron radiation source. The pressure-induced structural relaxation is exhibited. It is found that below about 8 GPa, the existence of excess free volume contributes to the rapid structural relaxation, which gives rise to the rapid volumetric change, and the structural relaxation results in the structural stiffness under higher pressure.     

Response of the electrical resistivity of La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript>(20 nm)/LaAlO<Subscript>3</Subscript>(001) films to magnetic field and variation in temperature

The structure, electrical resistivity, and magnetotransport parameters of 20-nm-thick epitaxial La_0.67Ba_0.33MnO₃ films grown by laser ablation on LaAlO₃(001) substrates are studied. The unit cell volume V _eff = 58.80 ų of the as-grown manganite films is found to be less than that for bulk La_0.67Ba_0.33MnO₃ crystals. Maximum values of the negative magnetoresistance MR(μ₀ H = 1 T) = ?0.27 for La_0.67Ba_0.33MnO₃ films are observed at a temperature of about 225 K. For 5 < T < 100 K, the film magnetoresistance depends only weakly on temperature and is on the order of ?0.1. At temperatures below 100 K and for 3 < μ₀ H < 5 T, the electrical resistivity of the as-grown films decreases linearly with increasing magnetic field.     

Specific features of electrical conductivity of V<Subscript>3</Subscript>O<Subscript>5</Subscript> single crystals

The electrical conductivity of V₃O₅ single crystals has been investigated over a wide temperature range, including the region of existence of the metallic phase and the region of the transition from the metallic phase to the insulating phase. It has been shown that the low electrical conductivity of metallic V₃O₅ is caused, on the one hand, by a lower concentration of electrons and, on the other hand, by a strong electronelectron correlation whose role with decreasing temperature increases as the phase transition temperature is approached. The temperature dependence of the electrical conductivity of the insulating phase of V₃O₅ has been explained in the framework of the theory of hopping conduction, which takes into account the effect of thermal vibrations of atoms on the resonance integral.     

Spin-wave resonances in Eu<Subscript>0.8</Subscript>Ce<Subscript>0.2</Subscript>Mn<Subscript>2</Subscript>O<Subscript>5</Subscript> and EuMn<Subscript>2</Subscript>O<Subscript>5</Subscript> multiferroics

Spin-wave resonances have been observed in superlattices arising due to the phase separation and self-organization of charge carriers in Eu_0.8Ce_0.2Mn₂O₅ single crystals. The resonances are found within the 5–80 K temperature range at frequencies close to 30 GHz. Similar resonances with intensities about an order of magnitude lower are also observed in EuMn₂O₅. The latter suggests the existence of charge transfer processes between the manganese ions of different valences in EuMn₂O₅.     

Response of the electrical resistivity and magnetoresistance of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films to biaxial compressive mechanical (001) or (110) strains

The behavior of the electrical resistivity and magnetoresistance of 40-to 120-nm-thick La_0.67Ca_0.33MnO₃ films grown on differently oriented lanthanum aluminate substrates was studied. The cell volume in thin (40 nm) La_0.67Ca_0.33MnO₃ films grown coherently on (001)LaAlO₃ was found to be substantially smaller. Mechanical stress relaxation in biaxially strained La_0.67Ca_0.33MnO₃ films is accompanied by an increase in the cell volume. The temperatures at which the electrical resistivity and magnetoresistance in biaxially strained La_0.67Ca_0.33MnO₃ films were maximum can differ by 60–70 K from those observed in bulk single crystals.     

Electrical properties of the perovskite-like phase of CaCoCu<Subscript>2</Subscript>V<Subscript>4</Subscript>O<Subscript>12</Subscript> at pressures of up to 50 GPa

The results from experimental investigations on the effect of high pressures (10–50 GPa) on the electrical properties and magnetoresistance of the perovskite-like high-pressure state of CaCoCu₂V₄O₁₂ are presented. The pressure ranges of substantial changes in the behavior of electrical characteristics are determined.     

Thermoelectric properties of La<Subscript>0.75</Subscript>Ca<Subscript>0.25</Subscript>MnO<Subscript>3</Subscript> manganite at ultrahigh pressures up to 20 GPa

Pressure dependences of the thermopower and electrical resistivity of the La_0.75Ca_0.25MnO₃ manganite are measured in the pressure range 0–20 GPa at room temperature. The absolute value of the thermopower increases in the pressure range 0–3 GPa and decreases at higher pressures. At the same time, the electrical resistivity decreases over the entire pressure range. It is found that the competing effect of the closing of the bandgap, which is determined by the activation energy for the thermopower, and the pressure broadening of the d bands is the cause of the observed behavior of the thermoelectric properties of La_0.75Ca_0.25MnO₃, which is untypical for the majority of dielectrics and semiconductors with single-band unipolar conductivity in the absence of phase transitions and is accompanied by a change in the sign of the pressure coefficient of the thermopower. The interrelation between the magnetic and thermoelectric properties of manganites under pressure is analyzed in the framework of the double exchange model. The causes of the considerable decrease in the pressure coefficients of the insulator-metal transition and Curie temperatures under pressure experimentally observed in manganites are discussed.     

High-frequency study of the orbital ordering resonance in the strongly correlated heavy fermion metal CeB<Subscript>6</Subscript>

A recently discovered magnetic resonance in the orbitally ordered phase of CeB₆ (orbital ordering resonance) is studied in a wide frequency range v = 44–360 GHz. The g-factor for this resonance was found to increase with frequency from g(v = 44 GHz) ∼ 1.55 to g(v > 250 GHz) ∼ 1.7. In addition to the orbital ordering resonance, a new magnetic resonance with a g-factor of 1.2–1.3 was detected for frequencies exceeding 200 GHz. Presented at the 5th Asia-Pasific EPR/ESR Symposium, August 24–27, 2006, Novosibirsk, Russian Federation.     

The low-temperature minimum of the resistivity of La<Subscript>0.85</Subscript>Ag<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> manganite

The low-temperature minimum of the La_0.85Ag_0.15MnO₃ resistivity has been investigated. The analysis of the experimental data shows that this minimum of resistivity in zero magnetic field and the large magnetoresistive effect, which increases with a decrease in temperature, can be explained within the model of spin-polarized tunneling of carriers through grain boundaries.     

Specific heat and electrical resistivity of an icosahedral-structure Zr<Subscript>70</Subscript>Pd<Subscript>30</Subscript> alloy and of its amorphous and crystalline analogs

Binary icosahedral and crystalline phases of the Zr₇₀Pd₃₀ alloy were obtained in crystallization from the amorphous state during heat treatment. The specific heat and electrical resistivity of the icosahedral, amorphous, and crystalline phases were measured and compared. An increase in the electronic density of states on the Fermi surface, lattice softening, and an increase in the electron-phonon coupling constant were observed to occur with decreasing structural order. Despite the high valence electron density in the icosahedral phase, where the electronic densities of states are twice those in the crystal, the electrical resistivity of the icosahedral phase is ～50 times as high. Superconductivity was observed for the first time in the icosahedral phase of a binary system of transition metal atoms, Zr₇₀Pd₃₀.