Quantum-limited sensitivity of single-electron-transistor-based displacement detectors

We consider a model of a quantum-mechanical resonator capacitively coupled to a single electron transistor (SET). The tunnel current in the SET is modulated by the vibrations of the resonator, and thus the system operates as a displacement detector. We analyze the effect of the backaction noise of charge fluctuations in the SET onto the dynamics of the resonator and evaluate the displacement sensitivity of the system. The relation between the "classical" and "quantum" parts of the SET charge noise and their effect on the measured system are also discussed.     

Coulomb promotion of spin-dependent tunneling

We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single-electron level we find that the interplay on the island between coherent spin-flip dynamics and Coulomb interactions can make the Coulomb correlations promote rather than suppress the current through the device. We find the criteria for this new phenomenon--Coulomb promotion of spin-dependent tunneling--to occur.     

固态量子比特的量子测量

文章介绍了作者用介观输运器件[如量子点接触（QPC）或单电子晶体管（SET）]测量固态量子比特的原理和特性，特别着重地介绍了作者最近在处理被测量子比特和介观测量仪器之间的关联方面的新进展。     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor

The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this work we consider the problem of solid-state charge qubit measurements with a single-electron-transistor (SET). We analyze two models: one corresponds to a strong response SET, and the other is a tunable one in response strength. We find that the response strength would essentially bound the quantum efficiency, making the detector non-quantum-limited. Quantum limited measurements, however, can be achieved in the limits of strong response and asymmetric tunneling. The present study is also associated with appropriate justifications for the measurement and backaction-dephasing rates, which were usually evaluated in controversial methods.     

Parasitic bipolar amplification in single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in single event transient (SET) current of single transistor and its temperature dependence are studied. We quantify the contributions of different current components in SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of single transistor.     

电流型探测器单粒子灵敏度标定的原理及应用

 采用电荷模数转换记录单个脉冲电荷的方法,标定了单能射线在电流型闪烁探测器中产生的平均电流,从而得到其灵敏度。标定结果与传统的电流法在±8%的范围内一致。该标定方法准确度高,扣除本底容易,对标定源的强度要求也大大降低。加上飞行时间法,还可对粒子进行甄别,能在中子-γ射线混合场中将中子和γ射线的电荷贡献分开,得到探测器对每种射线单独的灵敏度。该方法适用于在单个脉冲电荷信噪比较高的场合下标定脉冲电流型探测器。     

4H-SiC探测器的γ辐照影响研究

为研究4H-SiC探测器的抗γ辐照性能,使用40万Ci级的60Co源对4H-SiC探测器进行了数次辐照,累积辐照剂量最大为1 MGy(Si),并在辐照后对4H-SiC的性能进行了测试。随着累积辐照剂量增加,4H-SiC探测器的正向电流增大,而反向电流恰好相反;根据4H-SiC探测器的正向I-V曲线可提取理想因子和肖特基势垒,理想因子从1.87增加到2.18,肖特基势垒从1.93 V减小至1.69 V;4H-SiC探测器对241Am源产生的α粒子进行探测时,探测器的电荷收集率从95.65%退化到93.55%,测得能谱的能量分辨率由1.81%退化到2.32%。4H-SiC探测器在受到1 MGy(Si)的γ辐照后,与未受到辐照时相比,在探测能量为5.486 MeV的α粒子时能量分辨率和电荷收集率仅退化了28.18%和2.2%,仍具备优良的探测性能。     

Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor(Fin FET)technology. However, the studies of charge sharing induced single-event transient(SET) pulse quenching with bulk Fin FET are reported seldomly. Using three-dimensional technology computer aided design(3DTCAD) mixed-mode simulations,the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk Fin FET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing(RBB), the circuit with forward body-biasing(FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least.This can provide guidance for radiation-hardened bulk Fin FET technology especially in low power and high performance applications.     

SiC Schottky结反向特性的研究

对Ti/6H-SiC Schottky结的反向特性进行了测试和理论分析，提出了一种综合的包括SiC Schottky结主要反向漏电流产生机理的反向隧穿电流模型，该模型考虑了Schottky势垒不均匀性、Ti/SiC界面层电压降和镜像力对SiC Schottky结反向特性的影响，模拟结果和测量值的相符说明了以上所考虑因素是引起SiC Schottky结反向漏电流高于常规计算值的主要原因.分析结果表明在一般工作条件下SiC Schottky结的反向特性主要是由场发射和热电子场发射电流决定的.     

Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.     

Dynamics of a charge qubit coupled with a double-dot detector

We investigate theoretically the dynamics of a charge qubit (double quantum dot system) coupled electrostatically with the double-dot detector. The qubit charge oscillations and the detector current are calculated using the equation of motion method for appropriate correlation functions. In order to find the best detector performance (i.e. the detector current signal follows as well as possible the qubit charge oscillations) we consider different qubit-detector geometries. The optimal setup was found for the qubit lying parallel to the detector quantum dots for which we observed very good detector performance together with weak decoherence of the system. It is also shown that the asymptotic detector current (flowing in response to the limited in time qubit-detector interaction) fully reproduces the qubit dynamics.     

Measurement-induced decoherence in electronic interferometry at nanoscale

We introduce a theoretical formalism describing a wide class of ‘Which Path’ experiments in mesoscopic/nanoscopic transport. The physical system involves a mesoscopic interferometer (e.g. an Aharonov-Bohm ring with embedded dots or a side-coupled quantum dot) which is electrostatically coupled to a nearby quantum point constriction. Due to the charge sensing effect the latter acts as a charge detector. Therefore the interference pattern can be monitored indirectly by looking at the current characteristics of the detector as shown in the experimental work of Buks et al. [E. Buks, R. Schuster, M. Heiblum, D. Mahalu, V. Umansky, Nature (London) 391 (1998) 871]. We use the non-equilibrium Green-Keldysh formalism and a second order perturbative treatment of the Coulomb interaction in order to compute the relevant transport properties. It is shown that in the presence of the Coulomb interaction the current through the detector exhibits oscillations as a function of the magnetic field applied on a single-dot AB interferometer. We also discuss the dependence of the visibility of the Aharonov-Bohm oscillations on the gate potential applied to the dot.     

Adiabatic charge and spin pumping through interacting quantum dots

In this paper we investigate adiabatic charge and spin pumping through interacting quantum dots using non-equilibrium Green's function techniques and the equation-of-motion method. We treat the electronic correlations inside the dot using a Hartree-Fock approximation and succeed in obtaining closed analytic expressions for the Keldysh Green's functions. These allow us to compute charge and spin currents through the quantum dot. Depending on the parameters of the quantum dot and its coupling to the reservoirs, we show that it can be found in two different regimes: the magnetic regime and the non-magnetic regime. In the magnetic regime we find a non-vanishing spin current in addition to the charge current present in both cases.     

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.     

Charge and current beats in T-shaped qubit–detector systems

The time evolution of a charge qubit coupled electrostatically with different detectors in the forms of single, double and triple quantum dot linear systems in the T-shaped configuration between two reservoirs is theoretically considered. The correspondence between the qubit quantum dot oscillations and the detector current is studied for different values of the inter-dot tunneling amplitudes and the qubit–detector interaction strength. We have found that even for a qubit coupled with a single QD detector, the coherent beat patterns appear in the oscillations of the qubit charge. This effect is more evident for a qubit coupled with double or triple-QD detectors. The beats can be also observed in both the detector current and the detector quantum dot occupations. Moreover, in the presence of beats the qubit oscillations hold longer in time in comparison with the beats-free systems with monotonously decaying oscillations. The dependence of the qubit dynamics on different initial occupations of the detector sites (memory effect) is also analyzed.     

Graphene based single molecule nanojunction

We introduce the ab-initio framework for zigzag-edged graphene fragment based single-electron transistor (SET) operating in the Coulomb blockade regime. Graphene is modeled using the density-functional theory and the environment is described by a continuum model. The interaction between graphene and the SET environment is treated self-consistently through the Poisson equation. We calculate the charging energy as a function of an external gate potential, and from this we obtain the charge stability diagram. Specifically, the importance of including re-normalization of the charge states due to the polarization of the environment has been demonstrated.     

Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices

Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different charge carrier densities and temperature regimes. At high carrier densities or in the ON state,tunneling through the Schottky barrier at the interface between graphene and black phosphorus dominates at low temperatures. With temperature increasing, the Schottky barrier at the interface is vanishing, and the channel current starts to decrease with increasing temperature, behaving like a metal. While at low carrier densities or in the OFF state, thermal emission over the Schottky barrier at the interface dominates the carriers transport process. A barrier height of ~67.3 meV can be extracted from the thermal emission-diffusion theory.     

Correlation induced switching of the local spatial charge distribution in a two-level system

It was found that tunneling current through a nanometer scale structure with strongly coupled localized states causes spatial redistribution of localized charges induced by Coulomb correlations. We present here theoretical investigation of this effect by means of Heisenberg equations for localized states electron filling numbers. This method makes it possible to take into account pair correlations of local electron density exactly. It is shown that inverse occupation of the two-level system caused by Coulomb correlations appears in particular range of applied bias. Described effects can give a possibility of charge manipulation in the proposed system. We also expect that described results can be observed in tunneling structures with impurities or with small quantum dots.     

Josephson junction as a detector of poissonian charge injection

We propose a scheme of measuring the non-Gaussian character of noise by a hysteretic Josephson junction in the macroscopic quantum tunneling regime. We model the detector as an (under)damped LC resonator. It transforms Poissonian charge injection into current through the detector, which samples the injection statistics over a floating time window of length approximately Q/omega(J), where Q is the quality factor of the resonator and omega(J) its resonance frequency. This scheme ought to reveal the Poisson character of charge injection in a detector with realistic parameters.