Entanglement and the Kondo effect in serially coupled double quantum dots

We investigate entanglement between electrons in serially coupled double quantum dots attached to noninteracting leads. In addition to local repulsion we consider the influence of capacitive inter-dot interaction. We show how the competition between extended Kondo and local singlet phases determines the ground state and thereby the entanglement. The results are additionally discussed in connection with the linear conductance through the system.     

Signature of Kondo effect in silicon quantum dots

We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device. Received 13 November 2001 and Received in final form 18 February 2002     

Dynamically induced Kondo effect in double quantum dots

A new mechanism of resonance Kondo tunneling via a composite quantum dot (QD) is proposed. It is shown that, owing to the hidden dynamic spin symmetry, the Kondo effect can be induced by a finite voltage eV applied to the contacts at an even number N of electrons in a QD with zero spin in the ground state. As an example, a double QD is considered in a parallel geometry with N=2, which possesses the SO(4) type symmetry characteristic of a singlet-triplet pair. In this system, the Kondo peak of conductance appears at an eV value compensating for the exchange splitting.     

Quantum fluctuations and the Kondo effect in small quantum dots

We consider electron transport through quantum dots with large level spacing and charging energy. At low temperature and strong coupling to the leads, quantum fluctuations and the Kondo effect become important. They show up, e.g., as zero-bias anomalies in the current–voltage characteristics. We use a recently developed diagrammatic technique as well as a new real-time renormalization-group approach to describe charge and spin fluctuations. The latter gives rise to a Kondo-assisted enhancement of the current through the dot as seen in experiments.     

Multipeak Kondo effect in one- and two-electron quantum dots

We have fabricated a few-electron quantum dot that can be tuned down to zero electrons while maintaining strong coupling to the leads. Using a nearby quantum point contact as a charge sensor, we can determine the absolute number of electrons in the quantum dot. We find several sharp peaks in the differential conductance, occurring at both zero and finite source-drain bias, for the one- and two-electron quantum dot. We attribute the peaks at finite bias to a Kondo effect through excited states of the quantum dot and investigate the magnetic field dependence of these Kondo resonances.     

Kondo effect in quantum dots coupled to ferromagnetic leads

We study the Kondo effect in a quantum dot coupled to ferromagnetic leads and analyze its properties as a function of the spin polarization of the leads. Based on a scaling approach, we predict that for parallel alignment of the magnetizations in the leads the strong-coupling limit of the Kondo effect is reached at a finite value of the magnetic field. Using an equation of motion technique, we study nonlinear transport through the dot. For parallel alignment, the zero-bias anomaly may be split even in the absence of an external magnetic field. For antiparallel spin alignment and symmetric coupling, the peak is split only in the presence of a magnetic field, but shows a characteristic asymmetry in amplitude and position.     

Kondo temperature in multilevel quantum dots

We develop a general method to evaluate the Kondo temperature in a multilevel quantum dot that is weakly coupled to conducting leads. Our theory reveals that the Kondo temperature is strongly enhanced when the intradot energy-level spacing is comparable or smaller than the charging energy. We propose an experiment to test our result, which consists of measuring the size dependence of the Kondo temperature.     

Universality of the Kondo effect in quantum dots with ferromagnetic leads

We investigate quantum dots in clean single-wall carbon nanotubes with ferromagnetic PdNi-leads in the Kondo regime. Most of the Kondo resonances exhibit a splitting, which depends on the tunnel coupling to the leads and an external magnetic field B, but only weakly on the gate voltage. Using numerical renormalization group calculations, we demonstrate that all salient features of the data can be understood using a simple model for the magnetic properties of the leads. The magnetoconductance at zero bias and low temperature depends in a universal way on gμ(B)(B-B(c))/k(B)T(K), where T(K) is the Kondo temperature and B(c) the external field compensating the splitting.     

Tunneling in 2-D quantum dots via quantum adiabatic switching route

We explore the phenomenon of tunneling in single carrier 2-D quantum dot by quantum adiabatic switching route. The confinement in the y-direction is kept harmonic which ensures that tunneling is allowed only along the x-direction. The harmonic confinement potential is kept fixed and a constant external magnetic field is applied along the z-direction. The growth of probability density in the classically forbidden zones and tunneling current are monitored critically which reveals how tunneling significantly depends on the barrier parameters. The efficacy of the switching function in enforcing adiabaticity of the evolution is demonstrated. The effective mass, barrier width, and height emerge as important control parameters.     

Phonon-assisted Kondo effect in single-molecule quantum dots coupled to ferromagnetic leads

Based on the infinite-U Anderson model spin-polarized transport through the tunnel magnetoresistance (TMR) system of single-molecule quantum dot is investigated under the interplay of strong electron correlation and electron-phonon (e-ph) coupling. The spectral density and the nonlinear differential conductance are studied using the extended non-equilibrium Green's function method through calculating the dot-level splitting self-consistently. The results exhibit that a serial of peaks emerge on the two sides of the main Kondo peak for the antiparallel magnetic configuration of electrodes, while for the parallel case both the main and phonon-assisted satellite Kondo peaks all split up into two asymmetric peaks even at zero-bias. Correspondingly, the nonlinear differential conductance displays a set of satellite-peaks around the Kondo-peak in the presence of the e-ph interaction. Furthermore, extra maxima and minima appear in the TMR curve. The TMR alternates between the positive and the negative values along with the variation of bias voltage.     

嵌入并联耦合双量子点介观环系统中的近藤效应

使用双杂质Anderson模型的哈密顿，从理论上研究了一个嵌入并联耦合双量子点介观环系统 , 当处在Kondo区时的基态性质, 并用slave-boson平均场方法求解了哈密顿.研究的结果表 明， 在这个系统中，当两个量子点处于强耦合时，两个量子点可以相干耦合成一个人造分 子，导致一个增强的Kondo效应和超强持续电流的出现.因此，在未来的纳米装置应用中，这 个系统具有潜在的应用价值. 关键词： 并联耦合双量子点 Kondo效应 超强持续电流     

Kondo quantum dots and the novel Kondo-doublet interaction

We analyze the interactions between two Kondo quantum dots connected to a Rashba-active quantum wire. We find that the Kondo-doublet interaction, at an interdot distance of the order of the wire Fermi length, is over an order of magnitude greater than the RKKY interaction. The effects induced on the Kondo-doublet interaction by the wire spin-orbit coupling can be used to control the quantum dots spin-spin correlation. These results imply that the widely used assumption that the RKKY is the dominant interaction between Anderson impurities must be revised.     

Kondo effect in quantum dots at high voltage: universality and scaling

We examine the properties of a dc-biased quantum dot in the Coulomb blockade regime. For voltages V that are large compared to the Kondo temperature T(K), the physics is governed by the scales V and gamma, where gamma approximately V/ln(2)(V/T(K)) is the nonequilibrium decoherence rate induced by the voltage-driven current. Based on scaling arguments, self-consistent perturbation theory, and perturbative renormalization group, we argue that due to the large gamma the system can be described by renormalized perturbation theory in 1/ln(V/T(K))<1. However, in certain variants of the Kondo problem, two-channel Kondo physics is induced by a large voltage V.     

Nonequilibrium transport through double quantum dots: Kondo effect versus antiferromagnetic coupling

We theoretically study the nonequilibrium transport properties of double quantum dots, in both series and parallel configurations. Our results lead to novel experimental predictions that unambiguously signal the transition from a Kondo state to an antiferromagnetic spin-singlet state, directly reflecting the physics of the two-impurity Kondo problem. We prove that the nonlinear conductance through parallel dots directly measures the exchange constant J between the spins of the dots. In serial dots, the nonlinear conductance provides an upper bound on J.     

Ruderman-Kittel-Kasuya-Yosida and magnetic-field interactions in coupled Kondo quantum dots

We investigate theoretically the transport properties of two independent artificial Kondo impurities. They are coupled together via a tunable Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. For strong enough antiferromagnetic RKKY interaction, the impurity density of states increases with the applied in-plane magnetic-field. This effect can be used to distinguish between antiferromagnetic and ferromagnetic RKKY interactions. These results may be relevant to explain some features of recent experiments by Craig et al. [Science 304, 565 (2004)].     

Dynamical symmetries in Kondo tunneling through complex quantum dots

Kondo tunneling reveals hidden SO(n) dynamical symmetries of evenly occupied quantum dots. As is exemplified for an experimentally realizable triple quantum dot in parallel geometry, the possible values n=3,4,5,7 can be easily tuned by gate voltages. Following construction of the corresponding o(n) algebras, scaling equations are derived and Kondo temperatures are calculated. The symmetry group for a magnetic field induced anisotropic Kondo tunneling is SU(2) or SO(4).     

串型耦合双量子点之间库仑作用对其近藤共振的影响

从理论上研究了串型耦合双量子点之间库仑作用对其近藤共振的影响. 采用非平衡态格林函数和奴役玻色子平均场近似方法求解了系统的哈密顿量; 计算了系统电子的态密度、透射率、占居数和近藤温度随双量子点之间库仑作用能的变化, 同时也计算了电极处于极化时双量子点之间库仑作用能对系统电子态密度的影响. 结果表明,双量子点之间库仑作用能够极大地影响系统的基态物理性质. 同时还对相关的物理问题进行了讨论.     

The effect of the interdot Coulomb interaction on Kondo resonances in series-coupled double quantum dots

We theoretically investigate the effect of the interdot Coulomb repulsion on Kondo resonances in the series-coupled double quantum dot coupled to two ferromagnetic leads. The Hamiltonian of our system is solved by means of the slave-boson mean-field approximation, and the variation of the density of states, the transmission probability, the occupation number, and the Kondo temperature with the interdot Coulomb repulsion are discussed in the Kondo regime. The density of states is calculated for various interdot Coulomb repulsions with both parallel and antiparallel lead-polarization alignments. Our results reveal that the interdot Coulomb repulsion greatly influences the physical property of this system, and relevant underlying physics of this system is discussed.     

Spin-dependent Kondo effect induced by Rashba spin-orbit interaction in parallel coupled double quantum dots

Electronic transport through parallel coupled double quantum dots (DQD) with Rashba spin-orbit (RSO) interaction is investigated in Kondo regime by means of the slave-boson mean field approximation at zero temperature. By the co-action of the phase factor deduced by RSO interaction and the magnetic flux penetrating the parallel DQD, an interesting spin-dependent Kondo effect emerges. The molecular state representation theory is used to obtain a detailed understanding of the spin-dependent Kondo effect. It is shown that Quantum interference between the bonding Kondo state and antibonding state, which is modulated by the RSO interaction, plays a crucial role to the density of states and the linear conductance. The magnitude of each spin component conductance can be modulated by the RSO interaction strength. The conductance of each spin component exhibits 4π-periodic function with respect to φR. Moreover, the swap operation in the parallel DQD system can be implemented by tuning the RSO interaction.