Anisotropic optical conductivity and electron–hole asymmetry in doped monolayer graphene in the presence of the Rashba coupling

In this study, the optical conductivity of substitutionary doped graphene is investigated in the presence of the Rashba spin orbit coupling (RSOC). Calculations have been performed within the coherent potential approximation (CPA) beyond the Dirac cone approximation. Results of the current study demonstrate that the optical conductivity is increased by increasing the RSOC strength. Meanwhile it was observed that the anisotropy of the band energy results in a considerable anisotropic optical conductivity (AOC) in monolayer graphene. The sign and magnitude of this anisotropic conductivity was shown to be controlled by the external field frequency. It was also shown that the Rashba interaction results in electron–hole asymmetry in monolayer graphene.     

Rashba coupling induced spin susceptibility and magnetic phase transition of conduction electrons in monolayer graphene

Isolated graphene cannot be obtained by the known synthesis processes and it should be placed on a substrate. This substrate introduces a new type of spin–orbit interaction known as Rashba coupling. Using the Kubo formalism, the magnetic properties of the system in the linear regime have been investigated. Mainly the effect of non-magnetic substrate on the spin susceptibility is calculated. Results show that the Rashba coupling has a central role in the magnetic response function of the system and it is really remarkable since this type of spin orbit coupling can be effectively controlled by an external gate voltage. Most importantly, it was shown that, in the presence of the Rashba interaction a magnetic phase transition could be observed. This magnetic phase corresponds to a magnetic order of conduction electrons that takes place at some special frequencies of external magnetic field.     

Quantum Spin Transport in Rashba Spin-Orbit-Coupled Graphene Nanoflakes

We study the spin-resolved transport in a two-terminal graphene nanoflake device with a Rashba spinorbit coupling region in the center of the device. The Green's function method is applied to the system and the spin transmission probability and the spin polarization in x, y, and z directions are calculated. It is found that the components of the spin polarization are antisymmetric functions of Fermi energy, which oscillate and decay to the zero with increasing the energy for all values of the Rashba strength. It is shown that by tuning the Rashba strength via a gate voltage and/or changing the size of the system, it is possible to control the sign and magnitude of the spin polarization. The system represented here is a typical candidate for full electrical spintronic devices based on the carbon materials that are used for spin filtration.     

Semiclassical Boltzmann theory of spin Hall effects in giant Rashba systems

For the spin Hall effect arising from strong band-structure spin–orbit coupling, a semiclassical Boltzmann theory reasonably addressing the intriguing disorder effect called side-jump has not yet been developed. This paper describes such a theory in which the key ingredient is the spin-current counterpart of the semiclassical side-jump velocity (introduced in the context of the anomalous Hall effect). Applying this theory to spin Hall effects in a two-dimensional electron gas with giant Rashba spin–orbit coupling, largely enhanced spin Hall angle is found in the presence of magnetic impurities when only the lower Rashba band is partially occupied.     

Anisotropic quantum transport in monolayer graphene in the presence of Rashba spin–orbit coupling

We have studied spin-dependent electron tunneling through the Rashba barrier in a monolayer graphene lattices. The transfer matrix method, have been employed to obtain the spin dependent transport properties of the chiral particles. It is shown that graphene sheets in the presence of Rashba spin–orbit barrier will act as an electron spin-inverter.     

Persistent currents in a graphene ring with armchair edges

A graphene nanoribbon with armchair edges is known to have no edge state. However, if the nanoribbon is in the quantum spin Hall state, then there must be helical edge states. By folding a graphene ribbon into a ring and threading it by a magnetic flux, we study the persistent charge and spin currents in the tight-binding limit. It is found that, for a broad ribbon, the edge spin current approaches a finite value independent of the radius of the ring. For a narrow ribbon, inter-edge coupling between the edge states could open the Dirac gap and reduce the overall persistent currents. Furthermore, by enhancing the Rashba coupling, we find that the persistent spin current gradually reduces to zero at a critical value beyond which the graphene is no longer a quantum spin Hall insulator.     

Possible polaron formation of zigzag graphene nano-ribbon in the presence of Rashba spin–orbit coupling

In this article we study the role of Rashba spin–orbit coupling and electron–phonon interaction on the electronic structure of zigzag graphene nanoribbon with different width. The total Hamiltonian of nanoribbon is written in the tight binding form and the electron–electron interaction is modeled in the Hubbard term. We used a unitary transformation to reach an effective Hamiltonian for nano ribbon in the presence of electron–phonon interaction. Our results show that small Rashba spin orbit coupling annihilates the anti-ferromagnetic phase in the zigzag edges of ribbon and the electron–phonon interaction yields small polaron formation in graphene nano ribbon. Furthermore, Rashba type spin–orbit coupling increases (decreases) the polaron formation energy for up (down) spin state.     

Acoustic phonons mediated non-equilibrium spin current in the presence of Rashba and Dresselhaus spin–orbit couplings

Influence of electrons interaction with longitudinal acoustic phonons on magnetoelectric and spin-related transport effects are investigated. The considered system is a two-dimensional electron gas system with both Rashba and Dresselhaus spin–orbit couplings. The works which have previously been performed in this field, have revealed that the Rashba and Dresselhaus couplings cannot be responsible for spin current in the non-equilibrium regime. In the current Letter, a semiclassical method was employed using the Boltzmann approach and it was shown that the spin current of the system, in general, does not go all the way to zero when the electron–phonon coupling is taken into account. It was also shown that spin accumulation of the system could be influenced by electron–phonon coupling.     

Quantum transport in ferromagnetic graphene super lattice in the presence of Rashba spin–orbit coupling

Using the transfer matrix method, we study the electron transport through a single-layer graphene superlattice with alternating layers of ferromagnetic and normal regions with Rashba spin–orbit coupling. We show that the transport properties of the system depend strongly on the superlattice parameters. As another result, Rashba spin–orbit coupling manifests to be of crucial importance in controlling the transmission probabilities and Giant Magneto Resistance (GMR).     

Spin transfer torque in the semiconductor/ferromagnetic structure in the presence of Rashba effect

Spin transfer torque in magnetic structure occurs when the transverse component of the spin current that flows from the nonmagnetic medium to ferromagnetic medium is absorbed by the interface. In this paper, considering the Rashba effect on the semiconductor region, we discuss the spin transfer torque in semiconductor/ferromagnetic structure and obtain the components of spin-current density for two models:(i) single electron and(ii) the distribution of electrons. We show that no matter whether the difference in Fermi surface between semiconductor and Fermi spheres for the up and down spins in ferromagnetic increases, the transmission probability decreases. The obtained results for the values used in this article illustrate that Rashba effect increases the difference in Fermi sphere between semiconductor and Fermi sphere for the up and down spins in ferromagnetic. The results also show that the Rashba effect, brings an additional contribution to the components of spin transfer torque, which does not exist in the absence of the Rashba interaction. Moreover, the Rashba term has also different effects on the transverse components of the spin torque transfer.     

Two-dimensional topological insulator state and topological phase transition in bilayer graphene

We show that gated bilayer graphene hosts a strong topological insulator (TI) phase in the presence of Rashba spin-orbit (SO) coupling. We find that gated bilayer graphene under preserved time-reversal symmetry is a quantum valley Hall insulator for small Rashba SO coupling λ(R), and transitions to a strong TI when λ(R)>√[U(2)+t(⊥)(2)], where U and t(⊥) are, respectively, the interlayer potential and tunneling energy. Different from a conventional quantum spin Hall state, the edge modes of our strong TI phase exhibit both spin and valley filtering, and thus share the properties of both quantum spin Hall and quantum valley Hall insulators. The strong TI phase remains robust in the presence of weak graphene intrinsic SO coupling.     

Spin Hall and spin Nernst effects in graphene with intrinsic and Rashba spin-orbit interactions

The spin Hall and spin Nernst effects in graphene are studied based on Green’s function formalism.We calculate intrinsic contributions to spin Hall and spin Nernst conductivities in the Kane-Mele model with various structures.When both intrinsic and Rashba spin-orbit interactions are present,their interplay leads to some characteristics of the dependence of spin Hall and spin Nernst conductivities on the Fermi level.When the Rashba spin-orbit interaction is smaller than intrinsic spin-orbit coupling,a weak kink in the conductance appears.The kink disappears and a divergence appears when the Rashba spin-orbit interaction enhances.When the Rashba spin-orbit interaction approaches and is stronger than intrinsic spin-orbit coupling,the divergence becomes more obvious.     

Thermoelectric properties of magnetic configurations of graphene-like nanoribbons in the presence of Rashba and spin–orbit interactions

In this paper we investigate the influence of spin–orbit interaction and two types of Rashba interaction (intrinsic and extrinsic) on magnetic and thermoelectric properties of graphene-like zigzag nanoribbons based on the honeycomb lattice. We utilize the Kane-Mele model with additional Rashba interaction terms. Magnetic structure is described by the electron-electron Coulomb repulsion reduced to the on-site interaction (Hubbard term) in the mean field approximation. We consider four types of magnetic configurations: ferromagnetic and antiferromagnetic with in-plane and out-of plane direction of magnetization. Firstly, we analyze the influence of extrinsic Rashba coupling on systems with negligible spin–orbit interaction, e.g. graphene of an appropriate substrate. Secondly, we discuss the interplay between spin–orbit and intrinsic Rashba interactions. This part is relevant to materials with significant spin–orbit coupling such as silicene and stanene.     

Effects of Rashba Spin-Orbit Coupling on the Anisotropic Magneto Resistance in Domain Wall

The present paper, based on semi-classical Boltzmann equation, aims to investigate the effects of Rashba and Dresselhaus spin orbit interaction and impurities on domain wall anisotropic magneto resistance. It has been shown that the mentioned effects play a remarkable role in anisotropic magneto resistance of electron current in domain walls. It was also concluded that while an increase in Rashba coupling strength can effectively enhance anisotropic magneto resistance of the domain wall, an increase in the wave-vector and exchange interaction leads to their decrease.     

Thermoelectric transport and spin density of graphene nanoribbons with Rashba spin–orbit interaction

In the present paper, we have theoretically investigated thermoelectric transport properties of armchair and zigzag graphene nanoribbons with Rashba spin–orbit interaction, as well as dephasing scattering processes by applying the nonequilibrium Green function method. Behaviors of electronic and thermal currents, as well as thermoelectric coefficients are studied. It is found that both electronic and thermal currents decrease, and thermoelectric properties been suppressed, with increasing strength of Rashba spin–orbit interaction. We have also studied spin split and spin density induced by Rashba spin–orbit interaction in the graphene nanoribbons.     

Inelastic light scattering by a two-dimensional electron system with Rashba spin-orbit coupling

Inelastic light scattering by a two-dimensional system of electrons in a conduction band with Rashba spinorbit coupling is studied theoretically for the resonance case where the frequencies of the incident and scattered light are close to the effective distance between the conduction band and spin-split band in a III–V semiconductor. It is shown that, in contrast to the case of no spin-orbit coupling, the spectrum of the scattered light exhibits a plasmon peak even for strictly perpendicular polarizations of the incident and scattered light. There exists a configuration where the scattering spectrum exhibits features originating from single-particle transitions only. Furthermore, it is shown that, for the general case of elliptic polarizations of the incident and scattered light, the amplitude of the plasmon peak depends on the sign of the effective Rashba spinorbit coupling constant and the signs of the phases of the polarization vectors. This fact can be used to determine the sign of the Rashba constant.     

Effect of interfacial coupling on rectification in organic spin rectifiers

The effect of interfacial coupling on rectification in an organic co-oligomer spin diode is investigated theoretically by considering spin-independent and spin-resolved couplings respectively. In the case of spin-independent coupling, an optimal interfacial coupling strength with a significant enhanced rectification ratio is found, whose value depends on the structural asymmetry of the molecule. In the case of spin-resolved coupling, we found that only the variation of the interfacial coupling with specific spin is effective to modulate the rectification, which is due to the spin-filtering property of the central asymmetric magnetic molecule. A transition of the spin-current rectification between parallel spin-current rectification and antiparallel spin-current rectification may be observed with the variation of the spin-resolved interfacial coupling. The interfacial effect on rectification is further analyzed from the spin-dependent transmission spectrum at different biases.     

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.     

Effect of Total Reflection from a Symmetric Two-Channel Device with Fermion Path Nonanalyticity Points Induced by Rashba Spin-Orbit Coupling

The effect Rashba spin-orbit coupling has on transmission coefficient through a symmetric system with fermion path nonanalyticity points is illustrated using the example of a regular polygon-shaped chain. It is shown that the current passage through a device is blocked at the critical spin-orbit coupling values determined by the system’s geometry. At the near-critical spin-orbit coupling values, electron transport is possible only in a narrow range of energies.     

含δ势垒的铁磁/半导体/铁磁异质结中的自旋输运和渡越时间

研究了含δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和渡越时间,讨论了量子尺寸效应和Rashba自旋轨道耦合效应对隧穿特性的影响.研究结果表明：δ势垒的存在降低了自旋电子的透射概率,改变了透射概率的位相.Rashba自旋轨道耦合强度的增加加大了透射概率的振荡频率.不同自旋取向的电子隧穿异质结时,渡越时间随着半导体长度、Rashba自旋轨道耦合强度以及两铁磁电极中的磁化方向的夹角的变化而变化. 关键词： δ势垒')" href="#">δ势垒 铁磁/半导体/铁磁异质结 Rashba自旋轨道耦合效应 渡越时间