Electric stimulation of magnetoplasticity and magnetic hardening in crystals

The effect of electric field E on the magnetoplastic effect (MPE) has been investigated in NaCl crystals with different impurities, which provide either the plasticization of the samples in the magnetic field (positive MPE) or their magnetic hardening (negative MPE). The mobility of individual dislocations under the joint action of the magnetic and electric fields and the mechanical load on the crystals has been studied. The sharp electric stimulation of the MPE of both signs has been revealed, i.e., an increase or a decrease in the mean free path of dislocations that is roughly proportional to exp(±E/E ₀) at E ? E ₀ ～ 1–10 kV/m. In particular, in the negative-MPE NaCl(Pb) crystals, the accompanying electric field enhances the magnetic suppression of plasticity. The results are attributed to the electrically induced transformation of the additional part of the pinning impurity ions Me⁺⁺ to the magnetically active state of Me⁺ on the dislocations. The subsequent magnetic transformation of the structure of these pinning centers should lead to a sharper variation of the dislocation pinning force (either an increase or a decrease, depending on the MPE sign).     

Effect of a constant magnetic field and a pulse electric current on the mean linear density of twinning dislocations in bismuth crystals

Bismuth crystals are studied under the joint action of a pulse electric current and a constant magnetic field. It is shown that the combined effect of a constant magnetic field and pulse current leads to a substantial decrease in the mean linear density of twinning dislocations piled up at the boundaries of wedge twins. The decrease in the mean linear density of twinning dislocations is accompanied by a decrease in the microhardness of the samples.     

Electrically stimulated motion of dislocations in a constant magnetic field

This paper reports on the results of investigations into the dislocation mobility in n-Si single crystals (N _d =5×10²⁴ m^?3) upon simultaneous exposure to electric (j=3×10⁵ A/m²) and magnetic (B≤1 T) fields. It is found that the introduction of dislocations (≈10⁹ m^?2) into dislocation-free silicon doped with phosphorus leads to the appearance of the paramagnetic component of the magnetic susceptibility. The paramagnetic component increases with an increase in the dopant concentration. Similar transformations in silicon account for the formation of magnetically sensitive impurity stoppers that respond to external magnetic perturbations. An analysis of the behavior of dislocations in electric and magnetic fields has revealed a parabolic dependence of the dislocation path length on the magnetic induction B. The effective charges and mobilities of dislocations are numerically calculated from the results obtained. A model is proposed according to which the observed increase in the dislocation mobility is associated with the decrease in the retarding power of magnetically sensitive stoppers due to a local change in the magnetic characteristics of the material and the spin-dependent reactions stimulated by a magnetic field.     

On the nature of the influence of an electric current on the magnetically stimulated microplasticity of Al single crystals

A large increase in dislocation mobility in Al single crystals in a static magnetic field in the absence of mechanical loading of the samples is observed when a dc electric current of low density (10⁵–10⁶ A/m²)is additionally passed through the samples. Apparently, the role of the current reduces to depinning of dislocations from strong pinning centers on the surface of the crystal as a result of surface electromigration of defects. This interpretation is supported by the fact that in samples whose surface is insulated by a layer of lacquer the passage of a current through the volume of the crystal does not change the ordinary dislocation mobility level in a magnetic field. It is hypothesized that surface electromigration of defects, which frees dislocations and unblocks dislocation sources, also plays a key role in the physical mechanism of the long-ago discovered macroplastification of metals upon the passage of an electric current through them. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 10, 788–793 (25 May 1998)     

Electroluminescence of ZnS-Mn Single Crystals

The electroluminescence (EL) spectra of ZnS-Mn single crystals on excitation by constant and alternating electric fields E 10³–10⁴ V/cm were investigated. It is shown that the electroluminescence of the ZnS-Mn single crystals is related to a pre-breakdown one, during which the electric field is concentrated in the barriers formed by partial dislocations in the places where they break packing defects.     

Effects of doping and preliminary processing on the magnetically stimulated mobility of dislocations in InSb single crystals

The effect of the type of conductivity and the doping level of InSb single crystals on the mobility of fast 60° dislocations in a magnetic field is discovered. It is found that doping of a pure InSb crystal with tellurium (n-type impurity) to 10¹⁸ cm^?3 reduces the mobility of dislocations to the background level. At the same time, in p-type InSb crystals doped with Ge with the same carrier concentration (10¹⁸ cm^?3), the magnetoplastic effect is manifested clearly. It is shown that preliminary mechanical loading and, hence, internal stresses in the crystal affect not only the mean path length of dislocations in a magnetic field but also the magnitude of the threshold magnetic field below which the magnetoplastic effect is not observed. Possible reasons for these phenomena are discussed.     

X-ray and magnetic-field-enhanced change in physical characteristics of silicon crystals

The effect of low-energy (W = 8 keV) low-dose ((0.3?C7.3) × 10² Gy) radiation and a dc magnetic field (B = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which manifest themselves upon only X-ray exposure and combined (X-ray and magnetic) exposure, have been revealed.     

Magnetoplastic effect in irradiated NaCl and LiF crystals

The effect of low x-ray irradiation doses (≈10² rad) on the magnetoplastic effect — the detachment of dislocations from paramagnetic centers under the action of an external magnetic field B — in alkali-halide crystals has been investigated. The measurements were performed on LiF crystals and three types of NaCl crystals, differing in impurity content. The dependence of the mean free path l of the dislocations on the rotational frequency ν of a sample in a magnetic field was especially sensitive to low irradiation doses. In unirradiated crystals this dependence is a single-step dependence and is characterized by a critical frequency ν _c ∝B ² above which the magnetoplastic effect is not observed. The frequency ν _c depends only on the type of paramagnetic centers, and not on their density. Even the lowest irradiation dose employed (<100 rad) leads to a sharp restructuring of the dependence l(ν), converting it into a two-step dependence (for edge dislocations) with an additional critical frequency ν _c2, that is insensitive to the irradiation dose, and that corresponds to the appearance of magnetically sensitive stoppers of a new type under irradiation. The initial critical frequency ν _c1, as a rule, also varies with the dose, reflecting the change in state of the impurity complexes (Ca in NaCl and Mg in LiF). Specifically, it is shown for NaCl(Ca) crystals that as the irradiation dose increases, the frequency ν _c1 increases, gradually approaching the value ν _c2, so that by the time the dose is ≈300 rad, the dependence l(ν) once again becomes a single-step dependence, dropping sharply only for ν⩾ν _c2. It is shown that the addition of a small number of Ni atoms to a NaCl crystal makes the Ca complexes radiation resistant, and the critical frequency ν _c1 corresponding to them initially equals ν _c2 for crystals with no Ni. The recombination kinetics of radiation defects in the case in which the samples are irradiated under a tungsten lamp was investigated. A possible physical model of the observed dependences is discussed. Zh. éksp. Teor. Fiz. 111, 615–626 (February 1997)     

Effect of carbon ion bombardment and surface oxidation on the twinning rate of single-crystal bismuth

A study is made of the change in the dependences of the normal velocity of twinning boundaries on the magnitude of shear stresses in the twinning plane v _n =v _n (τ) in bismuth crystals owing to ion-cluster doping and oxidation of the irradiated surface. Irradiation was by 25 keV carbonions at a dose of 10¹⁷ ion/cm². Twinning of the crystals took place under pulsed loading conditions with pulse durations of 10⁻⁵−10⁻⁴ s and stress amplitudes of (0.2–2.0)×10³ g/mm³. Carbon ion bombardment of single-crystal bismuth causes a shift in the v _n =v _n (τ) curve toward lower stresses. An oxide film slows down the motion of twinning dislocations. Zh. Tekh. Fiz. 69, 130–131 (May 1999)     

Evolution of dislocation structure during deformation of γ-irradiated LiF crystals

The effect of γ irradiation on the mechanical characteristics and dislocation structure of slip bands in LiF crystals is studied at doses D⩽7.3×10⁸ R. Irradiation causes a substantial increase (up to a factor of 30) in the yield stress τ _y of the crystals, with τ _y ∝ D ^0.4 in the first approximation. The deformation shear increases in the slip bands of irradiated crystals, as do the densities of the screw and edge dislocation components, while the dislocation mean free paths decrease. Irradiation also raises the probability of twinning cross slip for screw dislocations. The observed effects are assumed to be related to the formation of a different kind of defects in the irradiated crystals, primarily clusters of implanted atoms. Fiz. Tverd. Tela (St. Petersburg) 39, 1072–1075 (June 1997)     

Magnetoplastic effect in twinning of bismuth crystals under a concentrated load

Twinning of bismuth crystals under a concentrated load is found to be partly suppressed by a constant magnetic field. The main mechanisms of the influence of a constant homogeneous magnetic field on the twinning of bismuth single crystals subjected to long-term concentrated loading is studied. It is revealed that the length and the number of wedge twins at an indentation decrease in the magnetic field. This suggests a decrease in the mobility of partial twinning dislocations and in the intensity of the nucleation of wedge twin interlayers in a constant magnetic field. Application of the magnetic field increases the width of twins at the mouth. No anisotropy of the magnetoplastic effect is observed upon twinning.     

Electrostimulation of the magnetoplastic effect in LiF crystals by an “internal” electric field induced during indentation

Indented LiF crystals demonstrate a change in the length of the dislocation rosette rays during their exposure to jointly acting dc magnetic and electric fields. It is shown that magnetic field with induction B = 1 T causes the electrostimulation or electrosuppression depending on the magnitude and direction of the external electric field with respect to the “internal” electric field induced by the charge transfer due to dislocations moving during the indentation.     

Deformation of NaCl crystals under combined action of magnetic and electric fields

The paper reports observation of a strong macroplastic effect of weak magnetic and electric fields (B≤0.4 T, E～1 kV/m) when applied simultaneously to NaCl samples in the course of their active deformation at constant rate ?=const. In the absence of magnetic field, electric effects in the macroplasticity of the same crystals become manifest at fields E≥10³ kV/m. Quantitative dependences of the macroplasticity on magnetic and electric fields and on the strain rate have been measured. A physical interpretation of the observed phenomena is proposed.     

Influence of magnetic field on acoustic emission in dislocation-containing silicon under current loading

The influence of weak (<1 T) magnetic fields on acoustic emission (AE) of dislocation-containing n-Si(111) under current loading j=(1?5)×10⁵ A/m² is investigated. It is found that the combined effect of the magnetic and electric fields leads to an increase in the acoustic emission response by a factor of 1.5 and is responsible for the emergence of an additional peak in the AE spectra at a frequency of 1.7–1.8 Hz. The result is explained by the influence of magnetic fields, which changes the energy state of paramagnetic stoppers. This facilitates the separation and motion of dislocations. Withdrawal of the magnetic field leads to the relaxation of acoustic emission processes, which is determined by the dynamics of excited point centers interacting with a dislocation.     

Neutron irradiation effects in Fe–Cu–Ni–Mn model alloys studied by measurements of magnetic minor hysteresis loops

We have measured magnetic minor hysteresis loops of neutron-irradiated Fe–Cu–Ni–Mn model alloys with variable combinations of Cu and Ni contents. It was revealed that minor-loop coefficients which are in proportion to internal stress decrease after neutron irradiation to a fluence of 0.44?×?10¹⁹?n?cm^?2 for all alloys. The decrease of the coefficients strongly depends on both Cu and Ni contents and is enhanced for alloys with high Cu and high Ni contents, in particular. The decrease of the coefficients during neutron irradiation was explained as due to preferential formation of Cu rich and/or Mn-Ni rich precipitates on dislocations which reduces internal stress of dislocations.     

Relation between crystal structure and electroluminescence in ZnS-Mn crystals

The electroluminescence of ZnS-Mn crystals annealed in zinc melt is investigated. When an external field of 10³-10⁴ V/cm is applied, continuous radiation is emitted over the whole volume of the spcimen. The volt-brightness characteristics are approximated by various functions and depend on the conditions of excitation. The results obtained are explained by the concentration of the electric field at barrier formed by partial dislocations at the place where they cut the hexagonal layers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 33–37, September. 1985.     

ESR in the Earth’s magnetic field as a cause of dislocation motion in NaCl crystals

The resonance displacements of the dislocations, l ∼ 100 μm, in NaCl crystals placed in the crossed Earth’s magnetic field B _Earth and the ac field $ \tilde B $ \tilde B ≈ 3 μT of the variable frequency ν ∼ 10⁶ Hz have been discovered in the absence of any other impact on the crystals. Two peaks of the mean dislocation path l(ν) with the maxima at ν₁ = 1.3 MHz and ν₂ = 3 MHz have been observed for the field $ \tilde B $ \tilde B oriented along the vertical and horizontal components of B _Earth, respectively. The effect is explained by the depinning of the dislocations from the impurity centers after their structural transformation due to the ESR in the dislocation-impurity system in the crossed fields. The subsequent motion of the dislocations proceeds under the action of internal stress in the crystals. A physical model has been proposed to explain the strong anisotropy of the effect with respect to the mutual orientation of the dislocation lines and magnetic fields.     

Sodium profiles in β″-alumina crystals: Modifications induced by argon bombardment

Abstract

Sodium depth profiles in implanted sodium β″-alumina single crystals have been measured by the nuclear resonance technique. A systematic investigation of the depth profile modifications as function of the implanted ion energy has been done using argon-ion (E = 50–600 keV) irradiation at fixed dose (Φ = 4 × 10¹⁶ions/cm²) and beam current (I = 1 μA/cm²). Argon doses were checked by Rutherford backscattering spectrometry. The changes in the sodium profiles are discussed in terms of transport equations which include three main processes: radiation enhanced transport, electric field assisted migration, and preferential surface sputtering of the alkali element. Special attention is devoted to the discussion of sputtering processes.     

The effect of magnetic and electric fields on the state of point defects in single-crystal NaCl

It is established that exposing crystals to a pulsed electric field with an amplitude of ∼10³ kV/m creates metastable states of the point defects, while a magnetic field with an induction of 7 T causes them to relax. Fiz. Tverd. Tela (St. Petersburg) 40, 2184–2188 (December 1998)     

The influence of γ radiation on the electrical properties of triglycinsulphate in a temperature autostabilization regime

The influence ofγ ⁶⁰ Co radiation on some of the electrical properties of single crystals of triglycinsulphate irradiated under various conditions was studied with special emphasis on the temperature autostabilization regime. The smallest changes in these properties occur with crystals whose temperature during irradiation is kept above the Curie temperature and which are at the same time exposed to the effects of a strong alternating electric field, and with crystals which are kept in the temperature autostabilization regime during irradiation. The changes caused by irradiation can be partly eliminated by additionally bringing the crystals into the autostabilization regime (renovation).