Thin-film electroluminescent structures on substrates with rough surfaces

It is shown that the use of substrates with inner rough and outer diffusely scattering surfaces in film electroluminescent structures makes it possible to substantially increase the coefficient of radiation extraction (by a factor of 1.3–2.5) and the brightness of luminescence (by a factor of 1.2–3.5) as compared to the structure on a smooth surface, which can be employed to enhance the brightness of individual colors of the luminescence of electroluminescent emitters. The results of the investigations indicate a substantial decrease in the constant of the time of brightness buildup (by a factor of 6–8 for MDSDM structures and by a factor of ∼3.8 for MDSCM structures) and the appearance of two segments of brightness decay for MDSMD structures with different constant decay times in going from the structure on a smooth substrate to the structures built on substrates with an inner rough surface. Unlike this, MDSCM structures have two segments of brightness decay on both a smooth substrate and a rough substrate. Ul’yanovsk State University, 42, L. Tolstoi St., Ul’yanovsk, Russia, 432700. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 5, pp. 787–793, September–October, 1998.     

Properties of zinc sulfide luminophores in thin-film structures

Ul'yanovsk State Technical University, 32, Severnyi Venets St., Ul'yanovsk, 432027, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 182–185, May–June, 1995.     

基于电致发光效应的光学电压传感器

本文综述了基于电致发光效应的光学电压传感器机理、分类及其主要特性,分析总结了此类传感器的研究现状及其存在的主要问题,同时提出未来研究课题的建议。电致发光型电压传感器的主要优点在于不需要载波光源,因而可以有效避免以往光学电压器中工作光源性能不稳定所引起的传感器性能变化;此外,此类电压传感器结构简单、体积小、重量轻、成本低,可以实现较高的性能价格比。今后研究的主要问题包括合理选择电压传感材料与器件、提高传感器的温度和湿度稳定性等。电致发光型电压传感器在电力工业和航空航天等领域的科学研究与实验中将具有广泛的应用前景。     

Optical characteristics of alkali-halide crystals doped with nickel ions

Scientific-Research Institute of Mechanics and Physics at the Saratov State University, 112-A, Bolshaya Kozach'ya Str., Saratov, 410071, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 235–238, May–June, 1995.     

High temperature magnetic order in zinc sulfide doped with copper

We report the first observation of magnetic order above room temperature in zinc sulfide doped with Cu²⁺ made by a simple sintering process and detected by ferromagnetic resonance (FMR), SQUID magnetometry and the μSR experiments. FMR study shows nonzero absorption above room temperature indicating a high value of Curie temperature. Field-cooled and zero-field-cooled magnetization data indicate a bifurcation at about 300 K. This temperature is considered to be the blocking temperature at ferromagnetic nanosized regions, which appear to exist in the sample of ZnS doped with copper. The muon spin rotation measurements confirm highly nonuniform magnetic order. It was shown that about 25% of the sample volume fraction exhibits strong magnetism.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

Effect of sweeping the “instantaneous” lasing frequency on the amplitude-detuning characteristic of a CO2 laser with loss modulation

The influence of changes in the refractive indices of the active medium and the loss modulator on the amplitude-detuning characteristic of a CO₂ laser was theoretically investigated. It is shown that at a comparatively great magnitude of sweeping the “instantaneous” lasing frequency, the magnitude of the laser response increases not only in negative detunings, but also over a wide range of positive detunings. The use of the procedure of changing the magnitude and sign of detuning as well as the range of sweeping and the frequency of modulation makes it possible to realize various periodic and chaotic regimes of lasing, i.e., to exercise control over the time and energy parameters of pulses over a very wide range. B. I. Stepanov Institute of Physics of the Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 318–324, May–June, 1997.     

Optical properties of pure and doped Y3Fe5O12 single crystals

Institute of Physics of Solids and Semiconductors, Academy of Sciences of Belarus, 17, P. Brovka Str., GSP, Minsk, 220072. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 63, No. 4, pp. 667–675, July–August, 1996.