Finite element analysis of three-dimensional laser-induced transient thermal grating in diamond/ZnSe system

This paper uses finite element method to obtain the three-dimensional temperature field of laser-induced transient thermal grating （TTG） for two-layered structure of diamond film on ZnSe substrate. The numerical results indicate that unique two-times heating process is gradually experienced in the area between two adjacent grating stripes. However, there is a little change for the temperature field along the depth direction for the diamond film due to its great thermal conductivity. It further finds that the thickness of the diamond film has a significant influence on the temperature field in diamond/ZnSe system. The results are useful for the application of laser-induced TTG technique in film/substrate system.     

连续激光辐照ZnSe/MgF2/K9滤光片的透射特性研究

 分析了连续激光辐照ZnSe/MgF₂/K9滤光片引起透射特性的变化。在室温条件下，用波长0.632 8μm激光作为探测光束，测量了1.06μm连续激光辐照ZnSe/MgF₂/K9滤光片温升引起薄膜折射率的改变，导致探测光束通过干涉滤光片后透过率的热致非线性变化。在光斑直径0.75mm条件下，测量了不同功率激光辐照ZnSe/MgF₂/K9滤光片引起温升随时间的变化。在激光功率30W，辐照时间2.52s条件下，实验观测到ZnSe/MgF₂/K9滤光片薄膜破坏温度约为90℃，辐照时间10s时干涉滤光片形成的薄膜龟裂形貌。     

Femtosecond laser-induced ZnSe nanowires on the surface of a ZnSe wafer in water

We present a simple route for ZnSe nanowire growth in the ablation crater on a ZnSe crystal surface. The crystal wafer, which was horizontally dipped in pure water, was irradiated by femtosecond laser pulses. No furnace, vacuum chamber or any metal catalyst were used in this experiment. The size of the nanowires is about 1-3 μm long and 50-150 nm in diameter. The growth rate is 1-3 μm/s, which is much higher than that achieved with molecular-beam epitaxy and chemical vapor deposition methods. Our discovery reveals a rapid and simple way to grow nanowires on designed micro-patterns, which may have potential applications in microscopic optoelectronics.     

Combination of temperature-programmed thermal desorption and laser-induced thermal desorption

The combination of temperature-programmed thermal desorption with heating rates of the order of 1 K s^–1 and laser-induced thermal desorption with of the order of 10¹⁰ K s^–1 has proved to be a suitable method to determine both the frequency factor v and the activation energy E _d of desorption. The systems Ni(110)/N₂ and Ni(110)/CO serve as examples.     

Raman investigation of femtosecond laser-induced graphitic columns in single-crystal diamond

We report on the fabrication of graphitic columns induced in single-crystal diamond plates using 100 fs laser pulses at 800 nm wavelength. Different values of laser fluence (0.6–1.2 J/cm²) and graphitization speed (1–100 μm/s) were used for the laser treatment. A Raman investigation was performed aimed at evaluating the structural properties of the fabricated columns, showing that a lower laser fluence and a proper choice of graphitization speed may improve the degree of graphite crystallinity, and suppress the residual diamond content.     

Three-dimensional MgB2-type superconductivity in hole-doped diamond

We substantiate by numerical and analytical calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB2, albeit in three dimensions. Holes at the top of the zone-centered, degenerate sigma-bonding valence-band couple strongly to the optical bond-stretching modes. The increase from two to three dimensions reduces the mode softening crucial for T(c) reaching 40 K in MgB2. Even if diamond had the same bare coupling constant as MgB2, which could be achieved with 10% doping, T(c) would be only 25 K. Superconductivity above 1 K in Si (Ge) requires hole doping beyond 5% (10%).     

Experimental study of laser-induced thermal ignition in O2/O3 mixtures

O₂/O₃ mixtures are ignited by absorption of laser pulses of a TEA CO₂ laser along the axis of a cylindrical cell. The dependence of the radial propagation of the O₃ decomposition, detected by uv absorption of the ozone, on laser fluence and on O₃ concentration is investigated. Oscillations of the signals are identified to be the first radial acoustic mode of the cell. For mixtures of 0.35 bar and 0.70 bar total pressure and O₃ percentages within 20–50%, the ignition limit is in the order of 0.1–0.2 J/cm³ (absorbed energy density). These values are in reasonable agreement with the results of the corresponding numerical simulations.     

基于ZnSe/Ag/ZnSe可见区透明导电薄膜

利用红外光学材料ZnSe和金属Ag在室温下采用电子束蒸发镀膜技术研制了透明导电薄膜ZnSe/Ag/ZnSe,该薄膜的电子浓度为1.208×1020 cm－3,电子迁移率和电阻率分别为17.22 cm2 V－1 s－1和2.867×10－5 Ω·cm,功函数达到5.13 eV,在可见区的平均透过率理论模拟值超过80%,而测量结果为63.8%,测量的最高透过率为83%.结果表明,该透明导电薄膜具有良好的光学和电学性能,可作为透明电极应用于发光二极管等光电子器件中.     

Modeling for laser-induced surface thermal lens in semiconductors

Received: 14 December 1997/Revised version: 19 May 1998     

基于ZnSe/Ag/ZnSe可见区透明导电薄膜

利用红外光学材料ZnSe和金属Ag在室温下采用电子束蒸发镀膜技术研制了透明导电薄膜ZnSe/Ag/ZnSe,该薄膜的电子浓度为1.208×1020cm-3,电子迁移率和电阻率分别为17.22 cm2 V1s-1和2.867×10-5Ω·cm,功函数达到5.13 eV,在可见区的平均透过率理论模拟值超过80％,而测量结果...     

Halogen impurities in CdS and ZnSe single crystals by thermal neutron activation

Halogen donors (chlorine, bromine and iodine) in cadmium sulfide and zinc selenide single crystals (vapor grown platelets with and without halogen dopants) were determined by thermal neutron activation analysis. This approach proved to be simple, rapid and highly selective. The analyzed impurity contents range from 100 ppb to several ppm. Radionuclides used for identification of chlorine, bromide and iodine were ³⁸Cl (t_1/2 ≈ 25 min), ⁸²Br (t_1/2 ≈35·1 hr) and ¹²⁸I (t_1/2 ≈ 25 min), respectively; these nuclides were radiochemically isolated and measured by gamma scintillation spectrometry. The levels of the impurities measured by this method were then used to identify new types of donor-acceptor pair line spectra and two-electron transitions accociated with chlorine, bromine or iodine impurities. The results were all in good agreement with the suspected lines, and accordingly well characterized.     

Three-dimensional analyses of photo-modulated reflectivity for transparent film/opaque substrate structures

For a structure consisting of a transparent film deposited on an opaque substrate radiated by a modulated focused laser beam, a 3-D model is established to calculate the temperature distributions. Then based on 3-D thermoelastic displacements and dielectric constants depended on the temperature of the bilayer structure, the photo-modulated reflectivity of the structure is calculated by using FEM method. As an example, the modulated reflectance variations with the modulation frequency of the optical beam and the thermal conductivity of the film in ZnO/Si bilayer structures are also obtained.     

Model for laser-induced thermal degradation and ablation of polymers

Ablation of organic polymers is described on the basis of photothermal bond breaking within the bulk material. Here, we assume a first-order chemical reaction, which can be described by an Arrhenius law. Ablation starts when the density of broken bonds at the surface reaches a certain critical value. In order to understand the ablation behavior near the threshold fluence, φ_th, non-stationary regimes must be considered. The present treatment reveals several qualitative differences with respect to models that treat ablation as a surface process: (i) Ablation starts sharply with a front velocity that has its maximum value just after the onset. (ii) The transition to the quasi-stationary ablation regime is faster. (iii) Near threshold, the ablated depth h has a square-root dependence on laser fluence, i.e., h∝(φ-φ_th)^1/2. The ablation velocity is very high even near φ_th. (iv) With φ≈φ_th ablation starts well after the laser pulse. (v) The depletion of species is responsible for the Arrhenius tail observed with fluences φ≤φ_th. (vi) Residual modification of material has maximum near the threshold. (vii) Stationary regimes of ablation demonstrate change of effective activation energy with laser intensity. The model calculations are applied to Polyimide (Kapton^TM H). Here, differences in single-pulse ablated depth determined from mass loss and profilometry should be about 10 nm. Received: 16 February 1999 / Accepted: 18 February 1999 / Published online: 28 April 1999     

Instabilities in diamond under high shear stress

We investigate, through first-principles calculations, lattice instabilities induced in diamond by the application of high shear stresses. For shear stresses as low as 95 GPa a lattice instability will occur, leading to graphitelike layered structures. This effect is highly anisotropic. The reversal of the direction of the applied shear forces may cause a change of 80 GPa in the shear stress value at which the instability develops. The same reversal also causes different bonds to be broken, resulting in a drastic change in the orientation of the resulting graphitelike structures. We also find that an additional compressive stress of 50 GPa along the (111) direction does not eliminate the shear-induced instability.     

Spatio-temporal structure formation and self-diffraction in CdS using laser-induced thermal gratings

The semiconductor CdS is well known to show various kinds of photo-thermal and photo-electric optical nonlinearities. We present here to our knowledge first results of spatiotemporal structure formation using laser-induced thermal gratings in CdS. By the means of an optical multi-channel analyzer the spatial resolution of transverse dynamic switching processes was observed directly. Spatially and time resolved self-diffracted signals were measured in the far-field. The experimental results agree very well with calculations obtained by solving the heat-flow equation and using a fast Fourier transformation. The calculations verify the experimental parameters, in particular the thermal diffusivity D0.1 cm²/s at room temperature. To obtain a better transverse structuring, CdS samples were also investigated which were fixed on a sapphire substrate for longitudinal heat sinking.     

板条固体激光器的三维瞬态热分布

本文建立了有限几何尺寸板条激光介质的三维温度分布模型.在普遍情况下,推导出温度分布的解析式.由此便于分析板条温度分布和泵浦参数、激光介质等的依赖关系.借助计算机进行的数值计算,证实了理论结果.