Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO₂ and investigated their electrical properties using the light current–voltage (I–V) curve and Suns-V_oc measurements. The light I–V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-V_oc measurements showed that the bias-dependence of the light I–V curves did not originate from the recombination in the SiO₂/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I–V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high J_sc and fill factor in n-type based Si heterojunction solar cells.     

Vortex pinning properties of –Ba–Cu–O and –Ba–Cu–O superconducting bulks

We have studied the effect of a small amount of Y-site substitution by La or Pr ions on the vortex pinning in the Y–Ba–Cu–O system. (Y_1-xLa_x)–Ba–Cu–O and (Y_1-xPr_x)–Ba–Cu–O bulks were fabricated by the melt-textured growth, in which x was varied from 0 to 0.01. The critical current density J_c at 77 K is improved in magnetic fields parallel to the c-axis above 2–4.5 T and the corresponding irreversibility field, H_irr, shifts to the higher value in both bulks.     

Rotational spectrum of the Ar–dimethyl sulfide complex

The rotational spectra of three isotopomers of the Ar–dimethyl sulfide (DMS) complex – normal, ³⁴S, and ¹³C species – were measured in the frequency region from 3.7 up to 24.1 GHz by Fourier transform microwave spectroscopy. The normal species yielded 43 a-type and 79 c-type transitions. No Ar tunneling splitting was observed, while many transitions were split by the internal rotation of the two methyl tops of the DMS unit. In cases where the K-type splitting was close to that due to methyl internal-rotation, several forbidden transitions were observed that followed b-type selection rules. All of the observed transition frequencies were analyzed simultaneously using a phenomenological Hamiltonian also used in previously published work describing the Ar–dimethyl ether (DME) and Ne–DME complexes. The rotational and centrifugal distortion constants and the potential barrier height to methyl-top internal rotation, V₃, were determined. The rotational constants were consistent with an Ar–DMS center of mass (cm) distance of 3.796 (3) Å and a S–cm–Ar angle of 104.8 (2)°. The V₃ potential barrier obtained, 736.17 (32) cm⁻¹, was 97.8% of the DMS monomer barrier. By assuming a Lennard–Jones-type potential, the dissociation energy was estimated to be 2.4 kJ mol⁻¹, which was close to the value for Ar–DME, 2.5 kJ mol⁻¹.     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.     

The Effect of Cricothyroid Muscle Action on the Relation Between Subglottal Pressure and Fundamental Frequency in an In Vivo Canine Model

The relation between subglottal pressure (P_s) and fundamental frequency (F₀) in phonation was investigated with an in vivo canine model. Direct muscle stimulation was used in addition to brain stimulation. This allowed the P_s-F₀ slope to be quantified in terms of cricothyroid muscle activity. Results showed that, for ranges of 0–2 mA constant current stimulation of the cricothyroid muscle, the P_s-F₀ slope ranged from 10 Hz/kPa to 60 Hz/kPa. These results were compared to similar slopes obtained in a previous study on excised larynges in which the vocal fold length was varied instead of cricothyroid activation. A physical interpretation of the P_s-F₀ slope is that the amplitude-to-length ratio of the vocal folds decreases with CT activity, resulting in a smaller time-varying stiffness. In other words, there is less dependence of F₀ on amplitude of vibration when the vocal folds are long instead of short.     

Observation of magnetization step at order–disorder transition in MgB2 single crystals

We have studied the order–disorder transition in high quality MgB₂ single crystals, using a torque magnetometry combined with a ‘vortex shaking’ technique. In the wide range of temperature T, field H and the H direction, we succeed in obtaining reversible magnetization curves M_rev(T, H) by shaking the pinned vortices. Especially at low temperatures below 25 K and high fields, where the irreversible magnetization curve exhibits the peak effect due to the order–disorder transition, it is found that the peak is transformed into the clear step in M_rev(H). Similar step-like behavior is also observed in the temperature dependence of magnetization M_rev(T). These results give direct evidence that the order–disorder transition, which is hidden by the large hysteresis of magnetization, has the nature of first-order transition.     

Effect of annealing temperature on microstructure, optical and electrical properties of sputtered Ba0.9Sr0.1TiO3 thin films

Ba_0.9Sr_0.1TiO₃ (BST) thin films were deposited on fused quartz and Pt/TiN/Si₃N₄/Si substrates by radio frequency magnetron sputtering technique. Microstructure and chemical bonding states of the BST films annealed at 700 °C were characterized by field emission scanning electron microscopy, X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and Raman spectrum. Optical constants including refractive indices, extinction coefficients and bandgap energies of the as-deposited BST film and the BST films annealed at 650, 700 and 750 °C, respectively, were determined from transmittance spectra by envelope method and Tauc relation. Dielectric constant and remnant polarization for the BST films increase with increasing annealing temperature. Leakage current density-applied voltage (J–V) data indicate that the dominant conduction mechanism for all the BST capacitors is the interface-controlled Schottky emission under the conditions of 14 V < V < 30 V and −30 V < V < −14 V. Furthermore, the inequipotential J–V characteristics for the BST films annealed at various temperatures are mainly attributed to the combined effects of the different thermal histories, relaxed stresses and strains, and varied Schottky barrier heights in the BST/Pt and Pt/BST interfaces.     

Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques

Charging and discharging phenomena from silicon nanocrystals have been studied by means of capacitance–voltage characteristics on P-type metal-oxide-semiconductor (P-MOS) capacitors with embedded self-assembled silicon quantum dots. The dots have a floating gate behavior as shown by the hysteresis onC –V curves. The Si-dots are charged or discharged by direct tunneling of carriers through a 3 nm thick oxide. The nanocrystals could be charged by electrons or holes, depending on the charging bias conditions. The discharge is studied by constant bias method and shows a logarithmic variation with time. Retention times higher than several hours are observed. A simple model is developed in order to evaluate the electric field within the tunneling oxide layer. Then, complete simulations are done for the different discharge paths. The barrier heights are extracted from the discharge data and possible confinement effects are discussed. The results confirm the high potentiality of silicon nanocrystal-floating gates for memory applications.     

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal–oxide–semiconductor (MOS) capacitors with gate Al₂O₃ layers are studied in this work. The capacitance versus voltage (C–V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C–V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.     

Growth and physical properties of sol–gel derived Co doped ZnO thin film

Zn_1−xCo_xO films were grown on glass by sol–gel spin coating process. The Zn_1−xCo_xO thin films with 10 at.% Co were highly c-axis oriented. The electrical resistivity of the films at 10 at.% Co had the lowest value due to the highest c-axis orientation. XPS and AGM analyses indicated that Co metal clusters weren’t formed, and the ferromagnetism was appeared at room temperature. The characteristics of the electrical resistivity and room temperature ferromagnetism of sol–gel derived Zn_1−xCo_xO films suggest a potential application to dilute magnetic semiconductor devices.     

Noncommutative theories, the axial anomaly, Fujikawa's method and the Atiyah–Singer index

Fujikawa's method is employed to compute at first order in the noncommutative parameter the U(1)_A anomaly for noncommutative SU(N). We consider the most general Seiberg–Witten map which commutes with hermiticity and complex conjugation and a noncommutative matrix parameter, θ^μν, which is of “magnetic” type. Our results for SU(N) can be readily generalized to cover the case of general nonsemisimple gauge groups when the symmetric Seiberg–Witten map is used. Connection with the Atiyah–Singer index theorem is also made.     

T1–T2 Correlation Spectra Obtained Using a Fast Two-Dimensional Laplace Inversion

Spin relaxation is a sensitive probe of molecular structure and dynamics. Correlation of relaxation time constants, such as T₁ and T₂, conceptually similar to the conventional multidimensional spectroscopy, have been difficult to determine primarily due to the absense of an efficient multidimensional Laplace inversion program. We demonstrate the use of a novel computer algorithm for fast two-dimensional inverse Laplace transformation to obtain T₁–T₂ correlation functions. The algorithm efficiently performs a least-squares fit on two-dimensional data with a nonnegativity constraint. We use a regularization method to find a balance between the residual fitting errors and the known noise amplitude, thus producing a result that is found to be stable in the presence of noise. This algorithm can be extended to include functional forms other than exponential kernels. We demonstrate the performance of the algorithm at different signal-to-noise ratios and with different T₁–T₂ spectral characteristics using several brine-saturated rock samples.     

First-principles study of transport properties of endohedral Li@C20 metallofullerene

The transport properties of the endohedral Li@C₂₀ metallofullerene are studied using density functional non-equilibrium Green’s function method. The equilibrium conductance of Li@C₂₀ metallofullerene becomes larger than that of the empty C₂₀ fullerene molecule. The I–V curve under low-bias voltage shows the characteristic of metallic behavior; another, the novel negative differential resistance behavior is also observed. It is found that the doping effect of Li atom significantly changes the transport properties of C₂₀ fullerene.     

Fabrication and electrical characterization of a MOS memory device containing self-assembled metallic nanoparticles

Floating gate devices with nanoparticles embedded in dielectrics have recently attracted much attention due to the fact that these devices operate as non-volatile memories with high speed, high density and low power consumption. In this paper, memory devices containing gold (Au) nanoparticles have been fabricated using e-gun evaporation. The Au nanoparticles are deposited on a very thin SiO₂ layer and are then fully covered by a HfO₂ layer. The HfO₂ is a high-k dielectric and gives good scalability to the fabricated devices. We studied the effect of the deposition parameters to the size and the shape of the Au nanoparticles using capacitance–voltage and conductance–voltage measurements, we demonstrated that the fabricated device can indeed operate as a low-voltage memory device.     

Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film

The effect of poly-Si thickness on silicidation of Ni film was investigated by using X-ray diffraction, auger electron spectroscopy, cross-sectional scanning transmission electron microscopy, resistivity, I–V, and C–V measurements. The poly-Si films with various thickness of 30–200 nm were deposited by LPCVD on thermally grown 50 nm thick SiO₂, followed by deposition of Ni film right after removing the native oxide. The Ni film was prepared by using atomic layer deposition with a N²-hydroxyhexafluoroisopropyl-N¹ (Bis-Ni) precursor. Rapid thermal process was then applied for a formation of fully silicide (FUSI) gate at temperature of 500 °C in N₂ ambient during 30 s. The resultant phase of Ni-silicide was strongly dependent on the thickness of poly-Si layer, continuously changing its phase from Ni-rich (Ni₃Si₂) to Si-rich (NiSi₂) with increasing the thickness of the poly-Si layer, which is believed to be responsible for the observed flat band voltage shift, ΔV_FB, in C–V curves.     

Flat-band voltage shift in metal-gate/high-k/Si stacks

In metal-gate/high-k stacks adopted by the 45 nm technology node, the flat-band voltage (V_fb) shift remains one of the most critical challenges, particularly the flat-band voltage roll-off (V_fb roll-off) phenomenon in p-channel metal-oxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the V_fb shift and the origin of the V_fb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the V_fb shift phenomenon are summarized and the future research trend is described.     

One- and two-dimensional C–H/N–H dipolar correlation experiments under fast magic-angle spinning for determining the peptide dihedral angle φ

A recently proposed ¹³C–¹H recoupling sequence operative under fast magic-angle spinning (MAS) [K. Takegoshi, T. Terao, Solid State Nucl. Magn. Reson. 13 (1999) 203–212.] is applied to observe ¹³C–¹H and ¹⁵N–¹H dipolar powder patterns in the ¹H–¹⁵N–¹³C–¹H system of a peptide bond. Both patterns are correlated by ¹⁵N-to-¹³C cross polarization to observe one- or two-dimensional (1D or 2D) correlation spectra, which can be simulated by using a simple analytical expression to determine the H–N–C–H dihedral angle. The 1D and 2D experiments were applied to N-acetyl[1,2-¹³C,¹⁵N] -valine, and the peptide φ angle was determined with high precision by the 2D experiment to be ±155.0°±1.2°. The positive one is in good agreement with the X-ray value of 154°±5°. The 1D experiment provided the value of φ=±156.0°±0.8°.     

Incorporation of a liquid crystal to enhance the luminescence properties of Langmuir–Blodgett films of OC1OC6-PPV

The control of molecular architecture provided by the Langmuir–Blodgett (LB) method allows one to obtain enhanced luminescence properties in polymer films, which can be exploited in polymer light emitting diodes (PLEDs). In this study, we show that incorporating a liquid crystal (LC) (PCH302/304) into poly-(2-methoxy-5-hexyloxy-p-phenylene-vinylene) (OC₁OC₆-PPV) in LB films leads to a 4-fold increase in photoluminescence and 2-fold increase in electroluminescence for (ITO/OC₁OC₆-PPV(LC5%)/Al) devices for emission at 585 nm, with the current vs. voltage (I vs. V) characteristics exhibiting a typical behavior of rectifying diode. The enhanced luminescence was attributed to an efficient separation of emitting OC₁OC₆-PPV units induced by the LC in the LB film, which were less ordered than LB films from neat OC₁OC₆-PPV.     

Effect of Temperature Variation on the Characteristics of Microwave Power AlGaN/GaN MODFET

The prime motivation for developing the proposed model of AlGaN/GaN microwave power device is to demonstrate its inherent ability to operate at much higher temperature. An investigation of temperature model of a 1 μm gate AlGaN/GaN enhancement mode n-type modulation-doped field effect transistor (MODFET) is presented. An analytical temperature model based on modified charge control equations is developed. The proposed model handles higher voltages and show stable operation at higher temperatures. The investigated temperature range is from 100 °K–600 °K. The critical parameters of the proposed device are the maximum drain current (I_Dmax), the threshold voltage (V_th), the peak dc trans-conductance (g_m), and unity current gain cut-off frequency (f_T). The calculated values of f_T (10–70 GHz) at elevated temperature suggest that the operation of the proposed device has sufficiently high current handling capacity. The temperature effect on saturation current, cutoff frequency, and trans-conductance behavior predict the device behavior at elevated temperatures. The analysis and simulation results on the transport characteristics of the MODFET structure is compared with the previously measured experimental data at room temperature. The calculated critical parameters suggest that the proposed device could survive in extreme environments.     

Anomalous vortex dynamics in

We report on measurements of current–voltage (I–V) characteristics for YNi₂B₂C single crystals with weak pinning in various fields at 7.6 K. We find nonmonotonic, N-shaped I–V curves in a certain field region deep in the vortex solid phase. This behavior is anomalous, since there exists an intermediate I region where flow voltage V shows a decrease with increasing I (a driving force). While the exact nature remains unknown, this phenomenon suggests vortex motion (driving I) induced pinning.