Intrinsic quantum conductances and capacitances of nanowires and nanocables

Here we calculate the intrinsic quantum capacitance of RuO₂ nanowires and RuO₂/SiO₂ nanocables (filled interiors, or nanotubes, which are empty), based upon available ab initio density of states values, and their conductances allowing determination of transmission coefficients. Comparisons are made to the intrinsic quantum capacitance of carbon nanotubes, and to RuO₂ and RuO₂/SiO₂ Schottky and p-n junction capacitances. We find that the intrinsic quantum capacitance of RuO₂ based nanostructures dominates over its junction capacitances by an order of magnitude or more, having important implications for energy and charge storage.     

Electrochemical characterization on layered lithium ruthenate for electrochemical supercapacitors

Electrochemical characteristics of lithium ruthenate (Li_xRuO_2+0.5x·nH₂O) for electrochemical capacitors' electrode material were first examined in this paper by cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge–discharge tests. Results show that Li_xRuO_2+0.5x·nH₂O has electrochemical capacitive characteristic within the potential range of − 0.2–0.9 V (vs. SCE) in 1 M Li₂SO₄ solution. The capacitance mainly arises from pseudo-capacitance caused by lithium ions' insertion/extraction into/out of the Li_xRuO_2+0.5x·nH₂O electrode. The specific capacitance of 391 F g^− 1 can be delivered at 1 mA charge–discharge current for Li_xRuO_2+0.5x·nH₂O electrode with an energy density of 65.7 W h kg^− 1. This material also exhibits an excellent cycling performance and there is no attenuation of capacitance over 600 cycles.     

Effect of electrodeposition modes on ruthenium oxide electrodes for supercapacitors

With developments in energy storage devices, supercapacitors are gaining more attraction because of their potential to excel batteries shortly. In this work, ruthenium oxide (RuO₂) has been deposited on stainless steel and studied the influence of surface modification of solid electrodes on capacitance properties. Hydrous ruthenium oxide was plated by different modes such as potential sweep method (cyclic voltammetric), constant potential method (chronoamperometry) and optimised potential pulse method using a recently reported precursor material namely ruthenium nitrosylsulfate (RuNS). The structural information and morphology of electrodeposits were characterised by X-ray diffractometer and scanning electron microscope respectively. The XRD studies indicate a poor crystalline state for RuO₂ in all the modes of deposition but can contribute to a higher surface area when compared to a highly crystalline form. The SEM analysis revealed the formation of surface modification concerning the change of potential mode. Mud-cracked morphology, spherical particles and dendrimeric morphology observed on chronoamperometry, potential pulse and cyclic voltammetry respectively. Electrochemical studies were also conducted on the samples to assess their performance for supercapacitor applications. The spherical particles of hydrous RuO₂ show high performance of capacitance behaviour 1180 F/g in 0.5 M H₂SO₄ at the scan rate of 5 mV/s. Dendrimeric morphology and mud-cracked morphology shows 573 F/g and 546 F/g respectively in same 0.5 M H₂SO₄ at the scan rate of 5 mV/s. The studies reveal that RuO₂ electrodes can be exploited for their outstanding capacitive behaviour by properly controlling the morphology of the deposits.     

Superior capacitive characteristics of RuO2 nanorods grown on carbon nanotubes

Carbon nanotubes (CNTs) were used as the electric double layer capacitor (EDLC) material and were synthesized by using thermal chemical vapor deposition (TCVD). To enhance the EDLC capacity, the ruthenium dioxide (RuO₂) nanorods were grown on CNTs by using metal organic chemical vapor deposition (MOCVD). The synthesized CNTs were the principal part and template, and the RuO₂ nanorods were grown outwardly from CNTs. The increase of effective specific area between electrode and electrolyte played an important role in enhancing the capacitance. Different concentrations of KOH were used as electrolyte to measure the capacitance to find the variation of capacitance. Moreover, the RuO₂/CNT composites demonstrated a stable cycle life. The results showed that the RuO₂/CNT composites were a promising supercapacitor device material.     

Electrodeposition of mesoporous ruthenium oxide using an aqueous mixture of CTAB and SDS as a templating agent

Mesoporous RuO₂ films were electrochemically fabricated on ITO-coated glass substrate from aqueous ruthenium chloride (RuCl₃·nH₂O) solution. To achieve highly stable mesoporous structure, an aqueous mixture of cetyltrimethylammonium bromide (CTAB) and sodium dodecyl sulfate (SDS) was used as a templating agent.The mesoporous structure was confirmed by small angle X-ray diffraction (SAXRD) and transmission electron microscopy (TEM). The addition of small amount (10wt%) of CTAB significantly improved the stability of porous structure. The crystallinity of synthesized RuO₂ thin film was confirmed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Specific capacitance of the synthesized films was evaluated by measuring cyclic voltammetry (CV) and charge-discharge curves in 0.5 M H₂SO₄. Compared with non-porous electrode, mesoporous RuO₂ showed higher supercapacitor performance.     

Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation

In this paper, we investigate the performance of ring oscillators composed of gate-all-around (GAA) silicon nanowire (NW) field-effect transistors (FETs) with four different numbers of NW channels, for sub-10-nm logic applications. Our simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (f_osc), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, our work shows that the f_osc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (∼0.1 fF). Thus, our study provides an insight for determining the capacitive load and optimal number of NW channels, for device development and circuit design of GAA NW FETs.     

Effects of annealing holding time on capacitance performance of RuO2–IrO2–graphene/Ti electrodes

The thermal decomposition method was used to prepare composite electrodes of the Ruthenium oxide–Iridium oxide–Graphene (RuO₂–IrO₂–G). Scanning Electron Microscopy (SEM), X–ray diffraction analysis (XRD), and electrochemical tests were used to study the influence of different annealing holding time on the surface morphology, phase composition, and capacitive performance of the coatings. The results showed that more and more RuO₂, IrO₂ nanoparticles were observed on the surface and cracks of the coating as the annealing holding time increasing. The RuO₂–IrO₂–G/Ti electrode was obtained by annealing for 5 h. The coating of the electrode consists of a certain amount of amorphous phase and nano–crystalline phase, and it had good electronic conductivity and ionic conductivity. At the same time, the electrode was prepared at 5 h had the largest specific capacitance of 778.46 F/g, which increased by 430.89 F/g than the electrode was prepared at 1 h. In addition, the electrode also had superior capacitance performance, capacitance retention and power characteristics.     

Local transport characteristics of break junction in Sr2RuO4 microbridge

We have measured tunnel conductance of spin-triplet superconductor Sr₂RuO₄ (SRO) break junction which was made by micro fabrication technique with a focused ion beam. This is a new type of tunnel junctions made of SRO, which is different from those made of SRO and other materials. Since the tunnel conductance is sensitive to the internal phase of superconductivity, it enables us to examine the chiral p-wave pairing state, which is the most probable candidate of SRO. The tunnel conductance spectrum of the junction showed a broad zero-bias conductance peak whose shape is different from that of high-T_c cuprate superconductors. The shape of the spectrum is in quite good agreement with the calculated spectrum of a chiral p-wave/insulator/normal metal junction.     

Supercapacitive properties of electrodeposited RuO2 electrode in acrylic gel polymer electrolytes

Hydrous ruthenium oxide (RuO₂) is prepared by electrodeposition on a platinum substrate and its supercapacitive properties are characterized adopting acrylic gel polymer electrolytes, such as poly(acrylic acid) (PAA), potassium polyacrylate (PAAK), and poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPS). The electrodeposited hydrous RuO₂ exhibits an amorphous compact stratified morphology with a higher loading (0.15 mg cm^?2) than that of a previous report, and shows broad redox peaks on both cathodic and anodic scans in the cyclic voltammetry. In particular, the RuO₂ electrode for supercapacitor adopting the PAMPS electrolyte shows the highest specific capacitance of 642 F g^?1 at 20 mV s^?1. This is due to the efficient utilization of active RuO₂ species and greater proton accommodation toward the negative oxygen sites of PAMPS's side chain. In addition, it is possible to improve sustainability against high-rate current with the RuO₂ electrode with the PAMPS electrolyte, due to the crosslinks of the gel electrolyte, which support the mechanical strength.     

Microscopic model of the coexistence of superconductivity and ferromagnetism in the hybrid ruthenate-cuprate oxide RuSr2GdCu2O8

A microscopic t-J-I model with competing antiferromagnetic (J) and ferromagnetic (I) exchange interactions is proposed for strongly correlated electrons in RuSr₂GdCu₂O₈. It is assumed that for CuO₂ layers and for RuO₂ layers. A superconducting solution of $d_{x^2 - y^2 }$ symmetry was obtained for the CuO₂ layers while competition between ferromagnetism and p-type triplet superconducting pairing is obtained for RuO₂ layers. It is shown that the RuO₂ layers have a lower carrier concentration in the Hubbard subband formed by coupled ((d _xy -p)-π) orbitals compared with a bulk Sr₂RuO₄ crystal, which leads to stabilization of the ferromagnetic state in the RuO₂ layer.     

Molecular constants of SiF4, GeF4, and RuO4: An improvement of the analysis of the ir-band contours of ν3(F2) by low temperature measurements and by using isotopically pure compounds

The ir-band contour of ν₃(F₂) of gaseous SiF₄, GeF₄, and RuO₄ have been analyzed making use of isotope substitution techniques, low temperature measurements, and matrix isolation spectroscopy. In the case of RuO₄ values for the hot band progression ν₃ + nν₄ ? nν₄ (X₃₄ = ?1.1 ± 0.1 cm^?1 for ⁹⁹RuO₄ and ¹⁰⁴RuO₄) have been obtained and F₂ block force constants have been calculated using isotope shifts Δω₃ and ζ₃ constants as additional data.     

Stable monolayer of the RuO2 structure by the Peierls distortion

In this paper, we presented a stable two-dimensional ruthenium dioxide monolayer by using first-principles calculations within density functional theory. In contrast to ordinary hexagonal and octahedral structures of metal dichalcogenides, RuO₂ is stable in the distorted phase of the structure as a result of occurring charge density wave. A comprehensive analysis including the calculation of vibration frequencies, mechanical properties, and ab initio molecular dynamics at 300?K affirms that RuO₂ monolayer structure is stable dynamically and thermally and convenient for applications at room temperature. We also investigated the electronic and optical properties of RuO₂ and it is found that RuO₂ has of 0.74?eV band gap which is in the infrared region and very suitable for infrared detectors.     

Conducting to non-conducting transition in dual transmission lines using a ternary model with long-range correlated disorder

In this work we study the behavior of the allowed and forbidden frequencies in disordered classical dual transmission lines when the values of capacitances {Cj} are distributed according to a ternary model with long-range correlated disorder. We introduce the disorder from a random sequence with a power spectrum S(k)∝k−(2α−1), where α?0.5 is the correlation exponent. From this sequence we generate an asymmetric ternary map using two map parameters b₁ and b₂, which adjust the occupancy probability of each possible value of the capacitances Cj={CA,CB,CC,}. If the sequence of capacitance values is totally at random α=0.5 (white noise), the electrical transmission line is in the non-conducting state for every frequency ω. When we introduce long-range correlations in the distribution of capacitances, the electrical transmission lines can change their conducting properties and we can find a transition from the non-conducting to conducting state for a fixed system size. This implies the existence of critical values of the map parameters for each correlation exponent α. By performing finite-size scaling we obtain the asymptotic value of the map parameters in the thermodynamic limit for any α. With these data we obtain a phase diagram for the symmetric ternary model, which separates the non-conducting state from the conducting one. This is the fundamental result of this Letter. In addition, introducing one or more impurities in random places of the long-range correlated distribution of capacitances, we observe a dramatic change in the conducting properties of the electrical transmission lines, in such a way that the system jumps from conducting to non-conducting states. We think that this behavior can be considered as a possible mechanism to secure communication.     

X-ray and UV photoelectron spectra of the oxides NbO2, MoO2 and RuO2

HeI and Mg Kα_1,2 valence band photoelectron spectra of polycrystalline samples of NbO₂, MoO₂ and RuO₂ are reported. A marked increase is observed in the intensity of the metal 4d structure, relative to that due to oxygen 2p electrons, on changing from X-ray to UV excitation. The superior resolution of the 4d signals in the HeI spectra reveals the presence of the Fermi edge in the metallic oxides MoO₂ and RuO₂. In addition, the HeI spectrum of MoO₂ shows a splitting of the metal 4d signal, confirming established ideas concerning the electronic structure of such materials.     

Asymmetry in electrical properties of Al‐doped TiO2 film with respect to bias voltage

The energy diagram of RuO₂/Al‐doped TiO₂/RuO₂ structures was estimated from the capacitance–voltage and leakage current density–voltage curves. The Al‐doping profile in TiO₂ film was varied by changing position of the atomic layer deposition cycle of Al₂O₃ during the atomic layer deposition of 9 nm‐thick TiO₂ film. The interface between the TiO₂ film and the RuO₂ electrode containing Al‐doping layer showed a higher Schottky barrier by 0.1 eV compared with the opposite interface without the doping layer. The evolution of various leakage current profiles upon increasing the bias with opposite polarity could be well explained by the asymmetric Schottky barrier. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Dimerization in Honeycomb Na<Subscript>2</Subscript>RuO<Subscript>3</Subscript> under Pressure: a DFT Study

The structural properties of Na₂RuO₃ under pressure are studied using density functional theory within the nonmagnetic generalized gradient approximation (GGA). We found that one may expect a structural transition at ～3 GPa. This structure at the high-pressure phase is exactly the same as the low-temperature structure of Li₂RuO₃ (at ambient pressure) and is characterized by the P2₁/m space group. Ru ions form dimers in this phase and one may expect strong modification of the electronic and magnetic properties in Na₂RuO₃ at pressure higher than 3 GPa.     

Mn-doped activated carbon aerogel as electrode material for pseudo-capacitive supercapacitor: Effect of activation agent

Carbon aerogel (CA) was prepared by a sol-gel polymerization of resorcinol and formaldehyde, and a series of activated carbon aerogels (ACA-X, X = H₃PO₄, K₂CO₃, KOH, and ZnCl₂) were then prepared by a chemical activation using different activation agent (X represented an activation agent). Specific capacitances of activated carbon aerogels were measured by cyclic voltammetry and galvanostatic charge/discharge methods in 6 M KOH electrolyte. Among the samples prepared, ACA-K₂CO₃ showed the highest specific capacitance (152 F/g). In order to combine excellent electrochemical performance of activated carbon aerogel with pseudo-capacitive property of manganese oxide, 7 wt% manganese oxide was doped on activated carbon aerogels (Mn/ACA-X) by an incipient wetness impregnation method. Capacitance measurements revealed that Mn/ACA-K₂CO₃ showed the highest specific capacitance (189 F/g). The enhanced capacitance of Mn/ACA-K₂CO₃ was attributed to the fine pore structure and outstanding electric properties of activated carbon aerogel as well as the faradaic redox reactions of manganese oxide.     

XPS investigations of ruthenium deposited onto representative inner surfaces of nuclear reactor containment buildings

In the case of a hypothetical severe accident in a nuclear power plant, interactions of gaseous RuO₄ with reactor containment building surfaces (stainless steel and epoxy paint) could possibly lead to a black Ru-containing deposit on these surfaces. Some scenarios include the possibility of formation of highly radiotoxic RuO₄(g) by the interactions of these deposits with the oxidizing medium induced by air radiolysis, in the reactor containment building, and consequently dispersion of this species. Therefore, the accurate determination of the chemical nature of ruthenium in the deposits is of the high importance for safety studies. An experiment was designed to model the interactions of RuO₄(g) with samples of stainless steel and of steel covered with epoxy paint. Then, these deposits have been carefully characterised by scanning electron microscopy (SEM/EDS), electron probe microanalysis (EPMA) and X-ray photoelectron spectroscopy (XPS). The analysis by XPS of Ru deposits formed by interaction of RuO₄(g), revealed that the ruthenium is likely to be in the IV oxidation state, as the shapes of the Ru 3d core levels are very similar with those observed on the RuO₂·xH₂O reference powder sample. The analysis of O 1s peaks indicates a large component attributed to the hydroxyl functional groups. From these results, it was concluded that Ru was present on the surface of the deposits as an oxyhydroxide of Ru(IV). It has also to be pointed out that the presence of “pure” RuO₂, or of a thin layer of RuO₃ or Ru₂O₅, coming from the decomposition of RuO₄ on the surface of samples of stainless steel and epoxy paint, could be ruled out. These findings will be used for further investigations of the possible revolatilisation phenomena induced by ozone.     

Chemical synthesis of nano-porous ruthenium oxide (RuO2) thin films for supercapacitor application

Ruthenium oxide (RuO₂) thin films have been prepared using single step chemical method containing Ru(III) Cl₃ solution in an aqueous medium at low temperature. The structural, morphological and optical properties have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and optical absorption technique. The XRD study revealed the formation of amorphous RuO₂ thin film. The surface examination by SEM showed formation of nano-porous material on the substrate. The TEM study revealed the formation of nanostructured material. The optical absorption studies showed the presence of direct band transition with band gap equal to 2.2 eV. The RuO₂ has proved its applicability in supercapacitor showing 50 F/g specific capacitance in 0.5 M H₂SO₄ at 20 mV/s scan rate.     

Modeling and calculation of the capacitance of a planar capacitor containing a ferroelectric thin film

The capacitance of a two-layer planar capacitor containing a thin layer of SrTiO₃ is calculated by conformal mapping using the partial capacitanc e method. Simple formulas are obtained for approximation calculation of the capacitances of individual components of a planar structure, and their limits of applicability are determined. A relation for the capacitance of a planar capacitor is derived which takes account of the size effect in a ferroelectric film within the context of the partial capacitance method. The calculated result is compared with the experimentally measured capacitance. Zh. Tekh. Fiz. 69, 1–7 (April 1999)