Long-range effect of ion irradiation on Cu surface segregation in a CuNi system

Ni films were deposited on one side of single crystal Cu substrate discs of 1.0 and 1.5 mm thickness. These discs were irradiated on the Cu side with argon ions. Evidence for enhanced Cu segregation at the Ni surface was found for both thicknesses. This effect decreased with increasing distance between the diffusion zone and the irradiated surface. Slow positron annihilation results indicate lower vacancy-like defects at the subsurface layer after Ar irradiation on the other surface of Cu disks. Such long-range effect is here interpreted on the basis of a particular type of mobile discrete breather called quodon.     

Problems of homogeneous irradiation of Si ingots more than 200 mm in diameter under neutron doping

The problem of homogeneous irradiation of Si ingots of large diameter (i.e., comparable with the thermal neutron diffusion length in silicon—20 cm) by thermal neutrons is considered. The effect of neutron absorption on the irradiation homogeneity is discussed. It is established for some usual cases of neutron doping that the neutron distribution in the irradiation zone affects the irradiation homogeneity. The results obtained can be useful for choosing and designing the irradiation zone for neutron doping of silicon.     

Photocarrier radiometry for noncontact evaluation of space monocrystalline silicon solar cell under low-energy electron irradiation

A space monocrystalline silicon(c-Si) solar cell under low-energy( 1 MeV) electron irradiation was investigated using noncontact photocarrier radiometry(PCR). Monte Carlo simulation(MCS) was employed to characterize the effect of different energy electron irradiation on the c-Si solar cell. The carrier transport parameters(carrier lifetime, diffusion coefficient, and surface recombination velocities) were obtained by best fitting the experimental results with a theoretical one-dimensional two-layer PCR model. The results showed that the increase of the irradiation electron energy caused a large reduction of the carrier lifetime and diffusion length. Furthermore, the rear surface recombination velocity of the Si:p base of the solar cell at the irradiation electron energy of 1 Me V was dramatically enhanced due to 1 MeV electron passing through the whole cell. Short-circuit current(I sc) degradation evaluated by PCR was in good agreement with that obtained by electrical measurement.     

Radiation enhanced diffusion in face centered cubic cu-zn alloys

The enhancement of diffusion by neutron irradiation has been investigated on a Cu-36 percent Zn alloy for various neutron fluxes and irradiation temperatures by means of in-pile measurements of electrical resistivity. For fresh samples the diffusion rate depends on temperature with an activation energy of 0.35 eV. During repeated irradiations the diffusion rate decreases and becomes nearly temperature independent. The variation of the concentration of interstitials and vacancies with irradiation time has been numerically calculated for various neutron fluxes, irradiation temperatures and sink concentrations. A comparison of the experimental and theoretical results shows that the point defects annihilate in fresh samples mainly by pair recombination and in samples which had been repeatedly cycled by pair recombination and at fixed sinks. Point defect clusters acting as sinks are created during the course of the irradiation as shown by electron microscope investigations. The radiation enhanced diffusion rate was found to depend on interstitials only, the activation energy of which was determined to 0.70 eV.     

Hydrogen enhanced oxygen diffusion

The diffusion of oxygen impurities in Cz silicon is thought to occur by a single process over the temperature range 350–1250°C. Enhanced oxygen diffusion has been reported for samples which have been subjected to high temperature pre-anneals, deliberate metallic contamination or irradiation by high energy electrons. Recently, enhanced oxygen diffusion has also been observed for samples annealed in a hydrogen plasma and there are correlated enhancements in the rate of production of thermal donors. It seems likely that hydrogen is also responsible for the enhanced rates of oxygen diffusion previously observed and these findings may have important consequences for plasma processing.     

Individual and combined effects of ultrasound, ozone and UV irradiation: a case study with textile dyes

Comparative degradation of azo dyes by 520 kHz ultrasonic irradiation and its combinations with ozone and/or ultraviolet light (UV) was investigated using a probe dye C.I. Acid Orange 7. Operation parameters such as ultrasonic power density, ozone flow, UV intensity, and type and injection mode of the bubbling gas were optimized based on the rate of absorption decay in the visible and UV bands as estimated by regression analysis of absorption-time data. At equivalent initial dye concentrations and contact times, individual effects of UV irradiation, ultrasound and ozone were "no effect", "bleaching", and "bleaching/organic carbon degradation", respectively. UV irradiation, however, was found to induce a catalytic effect when applied in combination with either ultrasound or ozone schemes; and the overall degradation process was most rapid under simultaneous operation of the three in the presence of a continuous flow of a gas mixture made of argon and oxygen. The synergy observed in combined schemes was attributed to enhanced ozone diffusion by mechanical effects of ultrasound, and the photolysis of ultrasound-generated H(2)O(2) to produce hydroxyl radicals.     

Radiation-enhanced diffusion in ion-implanted glass

The Rutherford backscattering technique was used to characterize the purposedly added cesium impurities in soda-lime glass. The impurities were introduced into the glass matrix by an ion-exchange diffusion process at room temperature. The diffusion coefficient of cesium was determined from the measured depth profiles. The diffusion of the cesium impurities stimulated by 280 keV Kr⁺-ion beam irradiation was also studied. The depth distributions obtained are discussed using the model of radiation enhanced diffusion. Results are compared with theoretical values based on transport of ions in matter calculations and other experimental work.On sabbatical leave at Applied Science University, Physics Department, P. O. Box 926296, Amman, Jordan     

Enhancement of pulsed laser ablation assisted with continuous wave laser irradiation

Continuous wave(CW) laser irradiation is employed to enhance the pulsed laser ablation of silicon and stainless steel(316 L)samples. Different surface temperatures generated by the CW laser irradiation are set as the initial working circumstance for the pulsed laser ablation. The diameter and depth of laser-ablated craters are measured to study threshold fluence, pulse incubation coefficient and ablation rate under different surface temperatures. Numerical simulation employing Heat Transfer in Solid and Deformed Geometry Interface modules in COMSOL is performed to estimate ablation rate theoretically based on Hertz-Knudsen equation. The realized crater-related data are analyzed to further obtain their dependences on surface temperature. The parametric and morphological studies indicate that the weakened plasma shielding effect and thermal diffusion in the ablated region induced by the CW laser irradiation lead to the enhanced pulsed laser ablation significantly.     

Sur la mobilité atomique accélérée liée à l'irradiation au cours d'une abrasion ionique

We propose several simple models to study the physical origin and respective importance in surface analysis of different mechanisms of enhanced atomic mobility in sputtered samples, and their influence on the depth resolution of the analysis. We study successively the effects of point defects created by the irradiation, collision cascades (effects of atomic displacements and also thermal spikes) and knock-on. The enhanced diffusion due to point defects is shown to be dominant in low melting point elements where vacancies are mobile. In other systems where vacancies are not mobile during analysis the effect of knock-on by primary ions is shown to be the most important.     

Mössbauer study of structural defects in metallic glasses

Radiation damage produced in amorphous Fe₇₈Si₇B₁₁Cz by thermal neutron irradiation has been studied with an aim to get information about defects and other structural changes occuring in the system. Neutron irradiation results in surface crystallization of the specimen via radiation enhanced diffusion. Mössbauer studies give evidence against the formation of point-like defects on irradiation.     

Enhancement of the electron-stimulated desorption from amorphous aluminum oxide films on silicon during an increase in the substrate temperature

The effect of high-temperature electron-stimulated desorption (ESD) from 20-nm-thick Al₂O₃ films deposited onto silicon wafers is studied. The ESD effect is found to be significantly enhanced upon heating. The films are found to decompose during ion beam irradiation of a heated substrate resulting in pure Al appearance. This process is accompanied by the formation of islands and almost pure silicon surface regions at a certain critical irradiation dose. Outside the irradiation zone, a 20-nm-thick Al₂O₃ film remains continuous even upon heating to 700°C and holding for 90 min. The effect of the primary electron beam energy on ESD from a 20-nm-thick Al₂O₃ film on silicon is investigated, and the parameters at which ESD takes place or absent are determined.     

Acceleration of nickel diffusion by high tensile stress in cold-worked type 316 stainless steel at 450°C

The effect of tensile stress on diffusion was studied by the diffusion couple method. A diffusion couple was prepared by electroless plating a nickel thin layer on the round notch surface of a compact tension-type specimen of 20% cold-worked Type 316 stainless steel. The couple was diffused at 450°C for 4003?h under the maximum tensile stress of 553?MPa in the load direction. A rapid diffusion coefficient of nickel in the Type 316 stainless steel was observed at the high tensile stress zone that was 6.5 times faster than that at the low-stress zone.     

离子辐照对单晶Si中预注入B原子扩散的影响

室温下使用MeV能量级Si,F和O离子对5keV B离子预注入后的n-型单晶Si(100)进行了辐照,应用二次离子质谱仪测试分析了掺杂物B原子的分布剖面及其变化.结果表明,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散.在相同的辐照条件下,Si近表面区域中SiO₂层的存在更有助于限制B原子的瞬间增强扩散.结合卢瑟福沟道背散射分析和DICADA程序计算对实验结果进行了讨论.     

Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures

We report proton radiation enhanced self-diffusion (RESD) studies on Si-isotope heterostructures. Self-diffusion experiments under irradiation were performed at temperatures between 780 degrees C and 872 degrees C for various times and proton fluxes. Detailed modeling of RESD provides direct evidence that vacancies at high temperatures diffuse with a migration enthalpy of H(m)(V)=(1.8+/-0.5) eV significantly more slowly than expected from their diffusion at low temperatures, which is described by H(m)(V)<0.5 eV. We conclude that this diffusion behavior is a consequence of the microscopic configuration of the vacancy whose entropy and enthalpy of migration increase with increasing temperature.     

Femtosecond-laser nanofabrication onto silicon surface with near-field localization generated by plasmon polaritons in gold nanoparticles with oblique irradiation

Nanohole fabrication process with gold nanoparticles irradiated by femtosecond laser at different incident angles is investigated. Nanoparticles with diameter of 200 nm and laser irradiation with center wavelength of 800 nm are used in the present study. The analysis of the electromagnetic field distribution in the near-field zone of the particle is made by simulations based on finite-differential time domain (FDTD) method. It is shown that when gold nanoparticle is irradiated by laser pulse surface plasmon excitation can be induced, and associated with it, high-intensity near field is produced in a limited area around the particle. It is found that the change of the irradiation conditions by means of irradiation from various incident directions gives a possibility of laser nanoprocessing with tunable characteristics. Our results show that enhanced optical intensity is able to be induced on the substrate surface regardless of incident direction of the laser due to the image charge interaction with the substrate. Furthermore, the use of p-polarized laser irradiation at a certain angle gives a minimum of the spatial dimensions of the enhanced zone on the substrate which is about two times smaller than that obtained at normal incidence.     

Zn离子注入多晶Al的扩散研究

用离子注入技术制备Zn-Al扩散偶,在注入浓度小于溶解度的条件下,本文提出杂质原子在基体单相中扩散的理论模型。应用数值分析方法对这一模型求解,得到与实验相符的杂质原子扩散分布;利用离子注入产生的增强扩散现象,还求出沉积法难以得到的260—380℃温区内Zn原子在多晶Al中的扩散系数,弥补了传统方法的不足。 关键词：     

超声波作用下污泥水分扩散过程的数值模拟

建立了超声波作用下污泥内部水分扩散模型,利用分形理论对超声波(20 kHz)作用下污泥内部孔隙结构进行描述,探讨了超声波声能密度对污泥孔隙表面分形维数df及孔隙通道曲折度分形维数dw的影响,在此基础上建立了超声波作用下多孔介质中液体有效扩散系数的分形模型,对不同声能密度超声波辐照下污泥水分扩散过程进行了数值模拟.研究发...     

Electron irradiation-enhanced core/shell organization of Al(Cr,Fe, Mn)Si dispersoids in Al–Mg–Si alloys

The age hardening 6061-T6 aluminium alloy has been chosen as structural material for the core vessel of the material testing Jules Horowitz nuclear reactor. The alloy contains incoherent Al(Cr, Fe, Mn)Si dispersoids whose characterization by energy-filtered transmission electron microscopy (EFTEM) analysis shows a core/shell organization tendency where the core is (Mn, Fe) rich, and the shell is Cr rich. The present work studies the stability of this organization under irradiation. TEM characterization on the same particles, before and after 1 MeV electron irradiation, reveals that the core/shell organization is enhanced after irradiation. It is proposed that the high level of point defects, created by irradiation, ensures a radiation-enhanced diffusion process favourable to the unmixing forces between (Fe, Mn) and Cr. Shell formation may result in the low-energy interface segregation of Cr atoms within the (Fe, Mn) system combined with the unmixing of Cr, Fe and Mn components.     

Effect of gamma irradiation on the atomic ordering of Fe–Co alloys in nanocrystalline films

The effect gamma irradiation has on the room-temperature atomic ordering in Fe_0.5Co_0.5 and Fe_0.75Co_0.25 single-crystal films is investigated. The possibility of Fe–Co alloys in film samples becoming disordered under the effect of gamma irradiation is revealed. This effect is explained by the effect gamma irradiation has on atomic diffusion.     

He-Ne激光对小麦幼苗增强UV-B辐射损伤修复的影响

采用He-Ne激光(5mW/mm²)来辐照处理经增强UV-B(10.8kJ·m^-2·d^-1)辐射损伤的小麦幼苗,通过荧光光谱测定其中双链DNA(dsDNA)的含量,分析研究了He-Ne激光对小麦DNAUV-B损伤的切除修复的影响和机制,以探明激光对UV-B损伤的修复途径及机制.结果表明:He-Ne激光能明显增强UV-B辐射处理后小麦种子的萌发力;小麦对UV-B辐射损伤具有一定的切除修复能力,切除修复的高峰期发生在UV-B辐射后4～6h内;He-Ne激光主要通过促进小麦的切除修复途径影响小麦对UV-B损伤的修复,而且能增强小麦的切除修复能力,其促进作用在修复高峰期(5h)表现尤为明显.