非共面几何条件下102eV电子碰撞He原子电离的全微分截面

利用DS3C模型研究了非共面几何(垂直平面与垂直动量转移平面)条件下,散射电子的散射角θ₁取不同固定值时,102eV的电子碰撞He原子单电离反应过程的完全微分截面(FDCS),将其计算结果与3C,CCC等理论模型及实验数据进行了比较.结果表明DS3C模型能够较好地定性描述非共面几何(垂直平面与垂直动量转移平面)条件下的碰撞结果,说明对于非共面几何条件下的碰撞过程,出射道三粒子间的动力学关联效应是比较强的. 关键词： 非共面几何 单电离 全微分截面     

Transmission optique,en lumiere polarisee,de couches tres minces de sodium,sous incidence oblique

The transmission factors of sodium in thin films have been determined for incidence angles of 0°, 45°, 70°; the electric field E being either parallel or perpendicular to the incidence plane. These factors present important differences according to polarization.     

Magnetic properties and structure of FePt/FeMn multilayers

A systematic study of the magnetic properties by ion beam sputter-deposition system, was conducted in conjunction with the structure of FePt/FeMn multilayers fabricated onto MgO(0 0 1) substrates. Both parallel and perpendicular exchange biases were observed in the multilayers and were found to decrease drastically, as the deposition temperature is higher than 350 °C, which is evidently due to the interdiffusion at the interface. The thickness dependence study shows that the perpendicular magnetic anisotropy observed in the multilayers originates from surface anisotropy, being consistent with the decrease of perpendicular magnetic anisotropy as the deposition temperature is increased. The difference between parallel and perpendicular blocking temperatures that was clearly observed, is possibly due to the spin canting out of plane at the interface.     

A structural study of a C3H3 species coadsorbed with CO on Pd(1 1 1)

The combination of chemical-state-specific C 1s scanned-energy mode photoelectron diffraction (PhD) and O K-edge near-edge X-ray absorption fine structure (NEXAFS) has been used to determine the local adsorption geometry of the coadsorbed C₃H₃ and CO species formed on Pd(1 1 1) by dissociation of molecular furan. CO is found to adopt the same geometry as in the Pd(1 1 1)c(4 × 2)-CO phase, occupying the two inequivalent three-fold coordinated hollow sites with the C–O axis perpendicular to the surface. C₃H₃ is found to lie with its molecular plane almost parallel to the surface, most probably with the two ‘outer’ C atoms in equivalent off-atop sites, although the PhD analysis formally fails to distinguish between two distinct local adsorption sites.     

Optical and electrical properties of SnO2:Sb thin films deposited by oblique angle deposition

The antimony doped tin oxide (SnO₂:Sb) (ATO) thin films were prepared by oblique angle electron beam evaporation technique. X-ray diffraction, field emission scanning electron microscopy, UV-vis-NIR spectrophotometer and four-point probe resistor were employed to characterize the structure, morphology, optical and electrical properties. The results show that oblique angle deposition ATO thin films with tilted columns structure are anisotropic. The in-plane birefringence of optical anisotropy is up to 0.035 at α = 70°, which means that it is suitable as wave plate and polarizer. The electrical anisotropy of sheet resistance shows that the sheet resistance parallel to the deposition plane is larger than that perpendicular to the deposition plane and it can be changed from 900 Ω/□ to 3500 Ω/□ for deposition angle from 40° to 85°, which means that the sheet resistance can be effectively tuned by changing the deposition angle. Additionally, the sandwich structure of SiO₂ buffer layer plus normal ATO films and oblique angle deposition ATO films can reduce the resistance, which can balance the optical and electrical anisotropy. It is suggested that oblique angle deposition ATO thin films can be used as transparent conductive thin films in solar cell, anti-foggy windows and multifunctional carrier in liquid crystal display.     

Characteristics of Gain-Guided Laser Diodes with Cylindrical-Mirror Cavity

We have developed highly reliable etched-mirror laser diodes using a dry etching method. The lasers without facet-coating have been operating stably over 2500 h under automatic-power control (APC) at a power of 3 mW/facet at 50°C. The gain-guided laser diodes with a cylindrical-mirror cavity (CMC) have coaxial mirrors and a fan-shaped stripe structure. By decreasing the curvature radius of the inner facet or increasing the stripe width of the inner facet, the beam waist parallel to the junction plane can be moved outside of the laser diode, while the beam waist perpendicular to the junction plane stops at the mirror facet. A particular CMC laser has a low astigmatism of 4.1 μm and a low relative intensity of noise (RIN) less than –134 dB/Hz at 4 mW under 0–1% optical feedback without high frequency current superposition.     

Temperature measurement of air convection using a Schlieren system

In this work, we have developed a procedure for full-field measurement of temperature of a fluid flow by using the schlieren technique. The basic idea is to relate the intensity level of each pixel in a schlieren image to the corresponding knife-edge position measured at the exit focal plane of the system. The method is applied in the measurement of temperature fields of the air convection caused by a heated rectangular metal plate (7.3 cm×12 cm). Our tests are carried out at plate temperatures of 50 °C and 80 °C. To validate the proposed method, the schlieren temperature results are compared to those obtained by a thermocouple. Thermocouple data are obtained along two mutually perpendicular directions (one direction along the optical axis, z-direction, and other direction along the x-axis, which is perpendicular to the optical axis) at points located on a 9×9 grid with a variable spacing. The thermocouple measurements were integrated along the z-axis in order to be compared with the measurements obtained by the schlieren technique. The results from the two methods show good agreement between them.     

STM study of successive Ge growth on “V”-stripe patterned Si (0 0 1) surfaces at different growth temperatures

The self-assembly process of Ge islands on patterned Si (0 0 1) substrates is investigated using scanning tunneling microscopy. The substrate patterns consist of one-dimensional stripes with “V”-shaped geometry and sidewalls inclined by an angle of 9° to the (0 0 1) surface. Onto these stripes, Ge is deposited in a step-wise manner at different temperatures from 520 °C to 650 °C. At low temperature, the Ge first grows nearly conformally over the patterned surface but at about 3 monolayers a strong surface roughening due to reconstruction of the surface ridges as well as side wall ripple formation occurs. At 600 °C, a similar roughening takes place, but Ge accumulates within the grooves such that at a critical thickness of 4.5 monolayers, 3D islands are formed at the bottom of the grooves. This accumulation process is enhanced at 650 °C growth, so that the island formation starts about 1 monolayers earlier. At 600 and 650 °C, all islands are all aligned at the bottom of the stripes, whereas at 550 °C Ge island form preferentially on top of ridges. The experimental observations are explained by the strong temperature dependence of Ge diffusion over the patterned surface.     

CoPt–Al 2 O 3 Nanocomposite Films: Synthesis,Structure, and Magnetic Properties

The structure and magnetic properties of CoPt–Al2O3 nanocomposite films synthesized by the annealing of Al/(Co3O4 + Pt) bilayers on a MgO(001) substrate at 650°C in vacuum are investigated. The synthesized composite films contain ferromagnetic CoPt grains with an average size of 25–45 nm enclosed in a nonconducting Al2O3 matrix. The saturation magnetization (Ms ~ 330 G) and coercivity (Hc ≈ 6 kOe) of the films are measured in the film plane and perpendicular to it. The obtained films are characterized by a spatial rotational magnetic anisotropy, which makes it possible to arbitrarily set the easy magnetization axis in the film plane or perpendicular to it using a magnetic field stronger than the coercivity (H > Hc).     

Synthesis and characterization of GaN nanowires by ammoniating Ga2O3/Cr thin films deposited on Si(1 1 1) substrates

GaN nanowires have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/Cr thin films at 950 °C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), FT-IR spectrophotometer, scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), and photoluminescence (PL) spectrum were carried out to characterize the microstructure, morphology, and optical properties of GaN samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high-quality crystalline, have the size of 30-80 nm in diameter and several tens of microns in length with good emission properties. The growth direction of GaN nanowires is perpendicular to the fringe of (1 0 1) plane. The growth mechanism of GaN nanowires is also discussed in detail.     

Crystallographic study of the phase transition in (Me4P)2ZnBr4

The compound (Me₄P)₂ZnBr₄, a member of the β-K₂SO₄ structure class, undergoes a phase transition at 84°C from the room temperature space group P12₁/c1 to the parent Pmcn structure. The room temperature structure corresponds to a ferrodistortive transition of B_1g symmetry at the zone center. At room temperature, the compound has lattice constants a=9.501(1), b=16.055(2), c=13.127(2) Å and β=90.43(1)°. For the high temperature phase, the orthorhombic cell has dimensions a=9.466(2), b=16.351(3) and c=13.284(2) Å. The structures consist of two crystallographically independent Me₄P⁺ cations and the ZnBr₄²⁻ anions. In the room temperature phase, all three ionic species show substantial displacement from the mirror plane perpendicular to the a-axis that exists in the high temperature phase, as well as rotations out of that plane. The thermal parameters of the cations are indicative of substantial librational motion. Measurements of lattice parameters have been made at 2-5°C intervals over the temperature range 40-140°C. The changes in the lattice constants appear continuous at T_c (within experimental limits) indicating that the phase transition is likely second-order. The a lattice constant shows an anomalous shortening as T_c is approached. Thermal expansion coefficients are calculated from this data. An application of Landau theory is used to derive the temperature dependencies of spontaneous shear strain and corresponding elastic stiffness constants associated with the primary order parameter.     

Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(1 1 1)

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/V films at 900 °C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of GaN sample. The results show that the GaN nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. The growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. The growth mechanism is also briefly discussed.     

Exchange interaction effect of TbCo/FePt bilayers

Interlayer exchange coupling in dc-magnetron sputtered Tb_29.6Co_70.4/FePt bilayers with different annealing temperatures of the FePt film have been investigated. The dependence of ordering degree on perpendicular magnetic properties of the FePt film was studied. The Tb_29.6Co_70.4/FePt film has high perpendicular coercivity and high saturated magnetization about 7.5 kOe, and 302 emu/cm³, respectively as the substrate temperature is 500 °C and annealing at 500 °C for 30 min. It also shows a strong exchange coupling between this FePt layer and Tb_29.6Co_70.4 layer. We also examined the interface wall energy in the exchange coupled Tb_29.6Co_70.4/FePt double layers.     

Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

In this paper we present the effect of low substrate temperature on structural, morphological, magnetic and optical properties of Ba-hexaferrite thin films. Films were deposited on single crystal Silicon (1 0 0) substrate employing the Pulsed Laser Deposition (PLD) technique. The structural, morphological, magnetic and optical properties are found to be strongly dependent on substrate temperature. The low substrate temperatures (room temperature to 200 °C) restrict the formation of larger grains. For the higher substrate temperature i.e., 400 °C, the grain size of the deposited thin film are much larger. The film grown at low substrate temperature do not show any anisotropy. As the substrate temperature is increased, the easy axis of the films alinged itself in the direction parallel to the film plane whereas the hard axis remained in the perpendicular direction. The higher substrate temperature caused the uniaxial magnetic anisotropy, which is very important in magnetic recording devices. The saturation magnetization and optical band gap energy values of 62 emu/cc and 1.75 eV, respectively, were achieved for the film of thickness 500 nm deposited at 400 °C. Higher values of coercivity, squareness and films thickness are associated with the growth of larger grains at higher substrate temperature.     

A comparison of the magnetic anisotropy of [001] and [111] oriented Co/Pd Multilayers

Superlattices of [001]_fcc Co/Pd with varying Co thicknesses from one to eight atomic layers per modulation period were epitaxially grown on NaCl by vapour deposition in UHV. Transmission electron diffraction indicates lattice coherence between the Co and the Pd layers for Co thicknesses up to six atomic layers. If deposited at a substrate temperatureT _s=50°C, only the superlattices containing Ci-monolayers show perpendicular magnetization. By raisingT _s to 200°C, the perpendicular anisotropy for Co monolayers is increased, and is also observed for Co bilayers. We suggest that this is due tolayer smoothening, which increases Néel's interface anisotropy. For more than 6 atomic layers of Co a loss of coherence is observed atT _s=50°C, accompanied by a structure transformation to hcp Co with a (0001)_Co(111)_Pd orientation.Non-epitaxial polycrystalline [111]-multilayers have a different anisotropy versus thickness behaviour. For such multilayers the range of Co thicknesses giving perpendicular magnetization is extended from 8 Å up to 12 Å atT _s=200°C. The different behaviour of the single crystal [001] films is caused by a strong volume contribution to the anisotropy, which favours in-plane magnetization, opposing the perpendicular interface anisotropy. This easy-plane term is attributed to magneto-elastic anisotropy due to stretching of the Co layers, via a positive magnetostriction.     

Sex differences in judging self-orientation: the morphological horizon and body pitch

Background  

Sex differences exist for many spatial tasks. This is true for circular vection, field dependence, and perception of veridical vertical with body tilt. However, explanations for these sex differences is lacking in the literature. In this study, we investigated the nature of individual differences in the perception of self-orientation in humans. Male and female participants were asked to identify their Morphological Horizon (i.e., line perpendicular to saggital plane at eye-level) in different body orientations relative to gravity (i.e., 45 deg and 135 deg body pitch) with and without prior whole body rotation.     

Structure and composition of cleaved and heat-treated tenfold surfaces of decagonal Al-Ni-Co quasicrystals

We investigated cleavage surfaces perpendicular to the tenfold direction of as-grown decagonal Al-Ni-Co quasicrystals by scanning tunneling microscopy, Auger electron spectroscopy, and scanning electron microscopy. The cleavage surface is determined by a cluster-subcluster structure. The image contrast of the smallest features, 1-2 nm in diameter, is related to the columnar atom arrangements extending perpendicular to the cleavage plane, which are predicted by current models of the decagonal quasicrystal structure. No voltage dependence of the STM images is observed. The presence of surface states and an enhanced density of states are discussed. Heat-treatments of the cleaved Al-Ni-Co quasicrystal surfaces show nearly no changes in chemical composition and structure up to about 750 °C. This is correlated with a much lower concentration of vacancies in as-grown decagonal Al-Ni-Co quasicrystals as compared to that in as-grown icosahedral Al-Pd-Mn quasicrystals.     

Electrical and optical properties of Al-doped ZnO thin films by sol-gel process

Al-doped ZnO (AZO) thin films oriented along the (0 0 2) plane have been prepared by the sol-gel process and their electrical and optical properties with post-deposition heating temperature were investigated. The preferred c-axis orientation along the (0 0 2) plane was enhanced with increasing post-deposition heating temperature and the surface of the films showed a uniform and nano-sized microstructure. The electrical resistivity of the films decreased from 73 to 22 Ω cm as the post-deposition heating temperature increased from 500 to 650 °C; however, the film postheated at 700 °C increased greatly to 580 Ω cm. The optical transmittance of the films postheated below 650 °C was over 86%, but it decreased at 700 °C. The electrical and optical properties of the AZO films with post-deposition heating temperature are discussed.     

L10 FePt thin films with [0 0 1] crystalline growth fabricated by SiO2 addition—rapid thermal annealing and dot patterning of the films

FePt films that have a high degree of order S in their L1₀ structure (S>0.90) and well-defined [0 0 1] crystalline growth perpendicular to the film plane were fabricated on thermally oxidized Si substrates by the addition of an oxide and successive rapid thermal annealing (RTA). The mechanism of L1₀ ordering and [0 0 1] crystalline growth perpendicular to the film plane arising through the oxide addition and RTA process is also discussed. The L1₀ ordering (S>0.90) and the [0 0 1] crystalline growth were achieved by (1) lowering the activation energy due to in-plane tensile stress and the initiation of L1₀ ordering at a low temperature, (2) [0 0 1] crystalline growth through in-plane tensile stress, and (3) enhancement of atomic diffusion via the addition of an oxide and the resultant lowering of the ordering temperature. Effect (1) was observed in the case of SiO₂ addition, effect (2) was generally observed in the case of oxide addition and the RTA process, and effect (3) was prominent in the case of ZnO addition. With the addition of ZnO, the L1₀ ordering started at below 400 °C and was completed at 500 °C. Finally, dot patterns were successfully fabricated down to a diameter of 15 nm using electron beam lithography, and the magnetic state of the dot pattern was observed by magnetic force microscopy.     

Electrical properties of plastically deformed n-type InSb

The conductivity and Hall effect have been measured between 78 ° and 295 ° K for n-InSb plastically deformed by uniaxial compression at 150 °, 200 °, 250 °, and 300 ° C. The sharp fall in the conductivity and the rise in the Hall coefficient are explained by trapping and scattering of carriers at dislocations and by scattering at point defects. Hole conduction occurs at low temperatures in specimens deformed 2.3% at 300 ° C. All deformed n-type specimens alter their low-temperature conductivity type after 3 hr at 300 ° C.