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温梯法Al2O3晶体位错形貌分析 总被引:1,自引:0,他引:1
用温度梯度法(Temperature Gradient Technique,简称温梯法或TGT法),定向籽晶[0001]方向,生长出φ110mm×80mm Al2O3单晶,晶体完整、透明.采用硼酸钠玻璃液作为Al2O3晶体的化学抛光和化学腐蚀剂,观察了晶体不同部位处(0001)、(112-0)晶片的化学腐蚀形貌相,(0001)切片的位错腐蚀坑呈三角形,位错密度为2×103~3×103/cm2;(112-0)切片位错腐蚀坑呈菱形,位错密度为7×103~8×103/cm2;而且等径生长部位的完整性比放肩处高.利用同步辐射X射线白光衍射实验分析了(0001)晶片的(2-021),(11-01)和(112-0)衍射面内的位错组态.确定了两组位错线的Burgers矢量,温梯法生长的Al2O3晶体中的位错主要是刃型位错. 相似文献
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本文采用高温化学气相输运法,温度970℃,在蓝宝石和石英基片上制备Zn1-xCoxO晶体.电子扫描显微镜(SEM)观察发现,蓝宝石晶片上的晶体形貌较SiO2 晶片上的规整,晶体呈现六棱柱或六棱锥体,一般显露柱面m{101-0}、正锥面p{101-1}、负极面c{0001-}和正极面c{0001},晶体表面光滑.在石英基片上得到的Zn1-xCoxO晶体生长的棱面较模糊,基片的部分晶体非定向密集生长,连续形成薄膜结构.X衍射证实晶体为ZnO纤锌矿结构.X光能谱﹙EDS﹚测量表明 ZnO 晶体有钴离子的存在,且浓度随原料中的Co2O3:ZnO的比值增大而增加 . 相似文献
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泡生法高质量蓝宝石晶体的研究 总被引:2,自引:0,他引:2
报道了泡生法生长[0001]方向的高质量蓝宝石晶体技术.经测量晶体位错密度为2×103~1.3×104/cm2之间,并利用激光剥蚀等离子体质谱仪(LA-ICP-MS)进行晶体杂质含量准确测量与分析.在600~1200 am范围内,晶体透过率均在80;以上;在1200~3000 nm范围内,晶体透过率均在85;以上.目前使用泡生法制作的蓝宝石晶体在商业产品使用中表现出良好性能. 相似文献
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采用ZnCl2·2H2O在常压下高温水解反应生长ZnO晶体,反应温度为500℃.当以SiC为衬底时,可以获得六棱柱形氧化锌晶体,直径约为10μm,长为30~100 μm.当衬底为蓝宝石时,氧化锌沿[0001]呈定向柱状生长,柱的直径为5~10 μm,柱之间具有较多的内部缺陷.当以ZnO为衬底时,在{0001}面,形成连续膜,表面扫描电镜分析表明,晶体具有明显的极性生长特征,[0001]方向呈螺旋柱状生长.在{0001}面,晶体的平整性较好,呈现台阶性生长. 相似文献
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Crystals of salol were grown by the Czochralski method in three different pulling directions to examine the crystallographic orientation effect of the seed. They were characterized by the etch pit method and X-ray projection topography. It was found that the dislocation density was 2 × 103−1 × 104/cm2 and that the configuration of dislocations was straight. The running directions of dislocations strongly depend on the pulling directions; i.e., [11 0] and [1 10] for the crystal grown in [100] axis, [11 0], [1 10] and [110] for the crystal pulled along [112] axis and [010] for [010] axis crystal. 相似文献
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M. Ya. Dashevsky A. M. Eidenson N. I. Kazimirov M. A. Khatsernov 《Crystal Research and Technology》1976,11(7):775-781
Low-angle boundaries in Si single crystals grown from the melt in [111], [100], [112], [110], [118] and [115] directions were investigated by chemical etching, copper decoration technique and X-ray topography. — LAB of four types were found in planes parallel to the crystal growth axes. Rearrangement of dislocations from slip bands into LAB was observed in heavily-doped Si crystals. The origin of LAB in melt grown Si crystals is discussed. It is shown that these boundaries are well interpreted in terms of dislocation alignment formation in the thermal stress field of the growing crystal. 相似文献
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B. M. Epelbaum K. Shimamura K. Inaba S. Uda V. V. Kochurikhin H. Machida Y. Terada T. Fukuda 《Crystal Research and Technology》1999,34(3):301-309
In spite of their superior laser and polarizer properties rare-earth orthovanadates (REVO4) single crystals have not been adopted yet into extensive industrial applications because of crystal growth difficulties. The main problems of CZ technique are compositional change and diameter instability. This work presents the first attempt to apply the edge-defined film-fed growth (EFG) technique by which well-shaped REVO4crystals have been grown directly. The capillary properties of YVO4 and GdVO4 melt have been measured. The applicability of shaped growth for rare-earth orthovanadate family was approved by successful EFG growth of transparent rod-like macro-defect-free single crystals of YVO4 and GdVO4. We address two main approaches to enhance the quality of EFG crystals: (i) meniscus and crystal shape stability dependence on die top shape and (ii) the strategy of effective operating control. Concave die top was found to be the best choice for high-quality EFG growth of REVO4 along [001] direction. The spectral analysis of weight signal from growing crystal was shown to be a useful feedforward clue to prevent crystallinity degradation at a very early stage. A reasonable stability of the EFG process was achieved using [211], [101], [001] and [100] pulling directions. 相似文献
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A high-momentum component of angular distributions of annihilation photons (HMC ADAP) has been studied experimentally and theoretically in single crystals of germanium, silicon and gallium arsenide and in a single crystal and polycrystal silicon. The model oe the process of positron annihilation with electrons of ion cores has been suggested and the calculations of HMC ADAP curves have been performed for crystallographic directions [111], [110] and [100] of a dimond-like lattice. It has been established that ADAP anisotropy characteristics in a single crystal of germanium are slightly dependent on the temperature in the range of ΔT = 300÷930 K. It has been concluded that HMC ADAP anisotropy is caused by annihilation of thermalizod positrons with electrons of outer shells of ion cores in crystal lattices of dimond-like semiconductors. 相似文献
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Nucleation of LiKSO4 (LKS) crystals from non-equimolar solutions may occur epitaxially on the surface of previously nucleated β-K2SO4 (KS) crystals. Both compounds evince a profound hexagonal substructure, and have common topological features and similar coordination schemes. Moreover, they may be related by quantitative similarities between their translation parameters and by correspondence between their bond chains along the directions of epitaxy. The planes of epitaxy are (001)KS, and (0001)LKS' and on these planes [010]KS is always parallel to [010]LKS' with a misfit of 12.19%. Another pair of directions, [11 0]KS and [100]LKS' showing a small angular misfit (0.18°), exhibit an even lower linear misfit (3.09%). 相似文献
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C. Gaire J. Palazzo I. Bhat A. Goyal G.-C. Wang T.-M. Lu 《Journal of Crystal Growth》2012,343(1):33-37
Quasi-single crystal Ge films were grown on cube textured Ni substrate at a temperature of 350 °C using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 °C was shown to alloy with Ni. From x-ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out-of-plane and in-plane directions were found to be 1.7±0.1° and 6±1°, respectively. In the out-of-plane direction, Ge[111]6CaF2[111]6Ni[001]. In addition, the Ge consisted of four equivalent in-plane oriented domains such that two mutually orthogonal directions: Ge〈2?11〉 and Ge〈01?1〉 are parallel to mutually orthogonal directions: Ni〈1?10〉 and Ni〈1?1?0〉, respectively, of the Ni(001) surface. This was shown to originate from the four equivalent in-plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions. 相似文献
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T. Roch E. Dobročka M. Mikula A. Pidík P. Durina A.A. Haidry T. Plecenik M. Truchlý B. Grancic A. Plecenik P. Kúš 《Journal of Crystal Growth》2012,338(1):118-124
Many applications based on TiO2 thin films are strongly influenced by the film crystalline quality, microstructure and surface morphology. We have utilized x-ray scattering methods for crystal structure study of TiO2 films, grown by DC reactive magnetron sputtering without heating. We have observed the formation of ordered phases after post-deposition ex-situ annealing in air at 600 °C. The distinct biaxial texture with respect to the c-plane (0001) Al2O3 substrate surface, which developed during heating, shows remarkable patterns in pole figures. We have identified epitaxial relationships of anatase A(001)[110]6sub(001)[11?00] and rutile R(100)[001]6sub(0001)[100] within single TiO2 layer. In addition, within the same sample, we have observed the anatase in (112) orientation with two in-plane relationship options A(112)[11?0]6sub(0001)[21?1?0] and A(112)[11?0]6sub(0001)[11?00]. 相似文献