Nanoscale dislocation patterning in Bi(1 1 1)/Si(0 0 1) heteroepitaxy

Continuous, atomically flat, and epitaxial Bi(1 1 1) films could be grown on Si(0 0 1). The inherent strain of 2.3% between the Bi(1 1 1) and Si(0 0 1) lattices is relieved by the formation of a grating like one-dimensional misfit dislocation array at the heterointerface. The lattice distortions around each dislocation give rise to a pronounced height depression Δh = 0.12 nm of the surface, which results in a spot splitting in low-energy electron diffraction and a height contrast in scanning tunneling microscopy (STM). Using STM surface profiles across these depressions, the Burgers vector of the underlying isolated non-interacting dislocations is estimated to be 0.377 nm. For thicker Bi films the ordering of the dislocation network is increased. This reflects an increase of repulsive interaction between neighboring dislocations.     

The Si(1 1 1)-(7 × 7) reconstruction: A surface close to a Mott-Hubbard metal-insulator transition?

Li adsorption at extremely low coverages on the “metallic” Si(1 1 1)-(7 × 7) surface has been experimentally studied recently by β-NMR experiments. Instead of increasing linearly with the sample temperature, as expected for a metallic system, the relaxation rate α = 1/T₁ is almost constant in between 50 K and 300 K sample temperature and rises Arrhenius like above. In order to understand this behaviour in a transparent way a closed form analysis is presented using rectangular density of states distributions. The almost temperature independent relaxation rate below 300 K points to an extremely localized and thus narrow band (width about 10 meV) which pins the Fermi energy. Because of the steeply rising relaxation rate beyond 300 K it is located energetically within a gap (about 380 meV wide) in between a lower filled and an upper empty (Hubbard) band. In dynamical mean field theories based on Hubbard Hamiltonians this kind of density of states is typical for correlated electron systems close to a Mott-Hubbard metal-insulator transition.     

STM image visualization of Si(1 1 1) 7 × 7 surface (graphic simulation and implementation)

The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 × 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 × 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.     

Structure and reactivity of the hydrated hematite (0 0 0 1) surface

The structure of the hydroxylated hematite (0 0 0 1) surface was investigated using crystal truncation rod diffraction and density functional theory. The combined experimental and theoretical results suggest that the surface is dominated by two hydroxyl moieties—hydroxyls that are singly coordinated and doubly coordinated with Fe. The results are consistent with the formation of distinct domains of these surface species; one corresponding to the hydroxylation of the surface Fe-cation predicted to be most stable under UHV conditions, and the second a complete removal of this surface Fe species leaving the hydroxylated oxygen layer. Furthermore, our results indicate that the hydroxylated hematite surface structures are significantly more stable than their dehydroxylated counterparts at high water partial pressures, and this transition in stability occurs at water pressures orders of magnitude below the same transition for α-alumina. These results explain the observed differences in reactivity of hematite and alumina (0 0 0 1) surfaces with respect to water and binding of aqueous metal cations.     

Surface resonance transition of roughened Cu(1 1 0)

The temperature dependence of the reflection anisotropy spectroscopy (RAS) of a Cu(1 1 0) surface has been studied over the temperature range 700-1000 K. Because of the roughening transition at 900 K, the bimodal feature at 4.2 eV for a clean surface shifted to 4.3 eV on annealing. A significant decrease in intensity of the same energy level was also observed with increasing annealing temperature. In the annealing temperature range 700-1000 K, anharmonic behavior is expected to be the predominant process of atomic disordering at the surface. Changes in the RAS of Cu(1 1 0) as a result of thermal processing can be understood in terms of the associated changes in surface states. The RAS signal for a surface resonance transition at 4.2 eV is associated with monoatomic [0 0 1] steps.     

Driving force for the WO3(0 0 1) surface relaxation

The optimized structure of the WO₃(0 0 1) surface with various types of termination ((1 × 1)O, (1 × 1)WO₂, and c(2 × 2)O) has been simulated using density functional theory with the Perdew-Wang 91 gradient corrected exchange-correlation functional. While the energy of bulk WO₃ depends weakly on the distortions and tilting of the WO₆ octahedra, relaxation of the (0 0 1) surface results in a significant decrease of surface energy (from 10.2 × 10⁻² eV/Ų for the cubic ReO₃-like, c(2 × 2)O-terminated surface to 2.2 × 10⁻² eV/Ų for the relaxed surface). This feature illustrates a potential role of surface relaxation in formation of crystalline nano-size clusters of WO₃. The surface relaxation is accompanied by a dramatic redistribution of the density of states near the Fermi level, in particular a transformation of surface electronic states. This redistribution is responsible for the decrease of electronic energy and therefore is suggested to be the driving force for surface relaxation of the WO₃(0 0 1) surface and, presumably, similar surfaces of other transition metal oxides.     

Structure of the SiC (0 0 0 1) 3 × 3 reconstruction studied by surface X-ray diffraction

The surface structure of the 3 × 3 reconstruction of the 4H-SiC (0 0 0 1) surface was investigated with surface X-ray diffraction (SXRD).Of the studied models, the twist model proposed by Starke et al. [U. Starke, J. Schardt, J. Bernhardt, M. Franke, K. Reuter, H. Wedler, K. Heinz, J. Furthmuller, P. Kackell, F. Bechstedt, Phys. Rev. Lett. 80 (1998) 758] gave the best fit to the experimental data. The structural parameters were determined accurately.     

Structural study of Si(1 1 1)-6 × 1-Ag surface using surface X-ray diffraction

The surface structure of Si(1 1 1)-6 × 1-Ag was investigated using surface X-ray diffraction techniques. By analyzing the CTR scattering intensities along 00 rod, the positions of the Ag and reconstructed Si atoms perpendicular to the surface were determined. The results agreed well with the HCC model proposed for a 3 × 1 structure induced by alkali-metals on a Si(1 1 1) substrate. The heights of the surface Ag and Si atoms did not move when the surface structure changed from Si(1 1 1)-√3 × √3-Ag to Si(1 1 1)-6 × 1-Ag by the desorption of the Ag atoms. From the GIXD measurement, the in-plane arrangement of the surface Ag atoms was determined. The results indicate that the Ag atoms move large distances at the phase transition between the 6 × 1 and 3 × 1 structures.     

Surface structure and phase transition of Ge(1 1 1)-3 × 3-Pb studied by reflection high-energy positron diffraction

We studied the structures and the phase transition of Pb/Ge(1 1 1) surface by using the reflection high-energy positron diffraction. The surface structures at 60 K and 293 K have the 3 × 3 and √3 × √3 periodicities, respectively. The rocking curves measured at both temperatures are nearly the same. This indicates that the equilibrium positions of the surface atoms do not change according to the phase transition. From the analysis of the rocking curve based on the dynamical diffraction theory, we found that at both temperatures the surface structures are composed of the so-called one-up and two-down model. The 3 × 3-√3 × √3 phase transition for the Pb/Ge(1 1 1) surface is interpreted in terms of order-disorder transition.     

Spectroscopic interpretation for Na-induced phase transitions on Na/Si(1 1 1)3 × 1

Na adsorption at room temperature causes the Na/Si(1 1 1)3 × 1 surface with Na coverage of 1/3 monolayer (ML) to transit into the Na/Si(1 1 1)6 × 1 surface at 1/2 ML and sequentially into the Na/Si(1 1 1)3 × 1 surface at 2/3 ML. The phase transition was studied by Si 2p core-level photoemission spectroscopy. The detailed line shape analysis of the Si 2p core-level spectrum of the Na/Si(1 1 1)3 × 1 surface (2/3 ML) is presented and compared to the Na/Si(1 1 1)3 × 1 surface (1/3 ML) which is composed of Si honeycomb chain-channel structures. This suggests that as additional Na atoms form atomic chains resulting in the Na/Si(1 1 1)3 × 1 surface (2/3 ML), the inner atoms of the Si honeycomb chain-channel structure is buckled due to the additional Na atoms.     

Surface pre-melting and surface flattening of Bi nanofilms on Si(1 1 1)-7 × 7

We report on the in situ observation of temperature-driven drastic morphology evolution and surface pre-melting of the Bi(0 0 1) nanofilm deposited on the Si(1 1 1)-7 × 7 surface by use of spot-profile-analyzing low-energy electron diffraction (SPA-LEED). Surface step density of the single-crystalline, epitaxial Bi(0 0 1) film decreases above 350 K in a critical manner. On annealed Bi(0 0 1) films, we have detected surface pre-melting with a transition temperature of 350 K, which yields reversible diffraction intensity drop in addition to the harmonic Debye-Waller behavior. The observed surface flattening of the as-deposited film is driven by the increased amount of mobile adatoms created through the surface pre-melting.     

Density functional study of ethylamine and allylamine on Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 surfaces

We have investigated the interactions of ethylamine and allylamine with models of the Si(1 0 0)-2 × 1 and Ge(1 0 0)-2 × 1 semiconductor surfaces. Ab initio molecular orbital calculations, along with density functional theory (DFT), are used to examine the interaction of these amines with cluster models of the semiconductor surfaces. The transition states and final adsorption products for adsorption of the molecules are predicted. The DFT calculations show the amines form N-dative bond states with Si(1 0 0)-2 × 1 or Ge(1 0 0)-2 × 1 as the initial adsorption product. The initial dative-bond products can be further activated, resulting in N-H bond cleavage on both surfaces. The overall reaction of a given amine on Si(1 0 0) via N-H dissociation is more exothermic than on the Ge(1 0 0) surface.     

STM study of Bi-on-Cu(1 0 0)

Scanning tunneling microscopy (STM) has been used to study the various possible structures of adsorbed Bi on the Cu(1 0 0) surface, after equilibration at a temperature of 520 K. All of the structures previously identified by X-ray diffraction (lattice gas, c(2 × 2), c(9√2 × √2)R45°, and p(10 × 10), in order of increasing Bi-coverage) were found to be present on a single sample produced by diffusing Bi onto the Cu(1 0 0) surface from a 3-d source. By investigating the possible coexistence of various pairs of phases, it was demonstrated that the c(2 × 2) phase transforms to the c(9√2 × √2)R45° phase by a first order transition, whereas the transition from c(9√2 × √2)R45° to p(10 × 10) is continuous. In addition, the structure of surface steps was studied as a function of Bi-coverage. The results showed that the presence of Bi changes the nature of the step-step interactions at the Cu(1 0 0) surface from repulsive to attractive. The attractive step-step interactions transform any small deviations from the nominal (1 0 0) orientation of the Cu substrate into (3 1 0) microfacets. When compared with the known equilibrium crystal shape (ECS) of Bi-saturated Cu, the observed microfaceting may imply that the ECS of Cu-Bi alloys is temperature dependent.     

Transformation to soluble model for structural phase transition from (4 × 1) to (8 × “2”) of In-adsorbed Si(1 1 1) surface

The Ising model proposed previously for the structural phase transition from (4 × 1) to (8 × “2”) of In-adsorbed Si(1 1 1) surface, Hamiltonian of which is consisting of a two-spin interaction as well as a four-spin interaction is shown to be equivalent in thermodynamic properties to a soluble Ising model with two-spin interactions. Temperature dependence of the long range order and the transition temperature can now be determined from the exact formulae. Comparison between the simulation results and those from the exact formulae is made to see accuracy of the simulation.     

Structural fluctuation of dimers on Ge(0 0 1) surface near transition temperature

The structural fluctuation of the orientational arrangement of buckled dimers on a Ge(0 0 1) surface near the transition temperature of the order-disorder phase transition is investigated by time-resolving dynamical Monte Carlo simulations. STM images averaged in a finite period are derived from the simulation. The coexistence of the c(4 × 2) and the apparent (2 × 1) domains in the STM images observed by experiments is reproduced in the simulated STM images. We show that the coexistence on the Ge(0 0 1) surface can be attributed to the critical slowing down near the transition temperature.     

Ground-state properties of arsenic deposited on the Ge(0 0 1)(2 × 1) surface

We present results of ab initio calculations of structural, electronic and vibrational properties of the Ge(0 0 1) surface covered with a monolayer of arsenic. The fully occupied π_u bonding and π_g antibonding electronic states due to the As-As dimer formation are quite close in energy and their ordering is same as that found on the Si(0 0 1) surface. Using our calculated atomic and electronic structures, surface lattice dynamics was studied by employing a linear response approach based on density functional perturbation theory. A comparison of the phonon spectrum of the Ge(0 0 1)/As(2 × 1) surface with that of the clean Ge(0 0 1)(2 × 1) surface indicates the presence of several new characteristic phonon modes due to adsorption of As atoms.     

Growth and morphology of the epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) Trilayers

Growth and surface morphology of epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(1 1 0) resulting in dense MgO(1 1 1) films at room temperature as well as at 250 °C. As observed by STM, initial deposition of MgO leads to a partial oxidation of the Fe(1 1 0) surface which is confirmed by Auger electron spectroscopy. The top Fe layer deposited on MgO(1 1 1) at room temperature is relatively rough consisting of clusters which can be transformed by annealing to an atomically flat epitaxial Fe(1 1 0) film.     

Water adsorption and dissociation on BeO(0 0 1) and (1 0 0) surfaces

Plateaus in water adsorption isotherms on hydroxylated BeO surfaces suggest significant differences between the hydroxylated (1 0 0) and (0 0 1) surface structures and reactivities. Density functional theory structures and energies clarify these differences. Using relaxed surface energies, a Wulff construction yields a prism crystal shape exposing long (1 0 0) sides and much smaller (0 0 1) faces. This is consistent with the BeO prisms observed when beryllium metal is oxidized. A water oxygen atom binds to a single surface beryllium ion in the preferred adsorption geometry on either surface. The water oxygen/beryllium bonding is stronger on the surface with greater beryllium atom exposure, namely the less-stable (0 0 1) surface. Water/beryllium coordination facilitates water dissociation. On the (0 0 1) surface, the dissociation products are a hydroxide bridging two beryllium ions and a metal-coordinated hydride with some surface charge depletion. On the (1 0 0) surface, water dissociates into a hydroxide ligating a Be atom and a proton coordinated to a surface oxygen but the lowest energy water state on the (1 0 0) surface is the undissociated metal-coordinated water. The (1 0 0) fully hydroxylated surface structure has a hydrogen bonding network which facilitates rapid proton shuffling within the network. The corresponding (0 0 1) hydroxylated surface is fairly open and lacks internal hydrogen bonding. This supports previous experimental interpretations of the step in water adsorption isotherms. Further, when the (1 0 0) surface is heated to 1000 K, hydroxides and protons associate and water desorbs. The more open (0 0 1) hydroxylated surface is stable at 1000 K. This is consistent with the experimental disappearance of the isotherm step when heating to 973 K.     

The surface structure of BaO on Pt(1 1 1): (2 × 2)-reconstructed BaO(1 1 1)

The surface structure of BaO(1 1 1) has been determined using STM and computer modelling. The BaO(1 1 1) surface was prepared in thin film form on Pt(1 1 1) and presents a surface with twice the lattice parameter expected for that of the bulk termination, i.e. a (2 × 2) reconstruction. Computer modelling indicates that the bulk termination is unstable, but that the (2 × 2) reconstructed BaO(1 1 1) surface has a low surface energy and is hence a stable surface reconstruction. The (2 × 2) reconstruction consists of small, three-sided pyramids with (1 0 0) oriented sides and either oxygen or barium ions at the apices. Less regular surface reconstructions containing the same pyramids are almost equally stable, indicating that we may also expect less regular regions to appear with a fairly random distribution of these surface species. The simulations further suggest that a regular (4 × 4) reconstruction built up of bigger pyramids is even more energetically favourable, and some evidence is found for such a structure in the STM.     

Relaxations in the 1 × 5 reconstruction of Pt(1 1 0)

Pt(1 1 0) is one of the most closely investigated metal surface structures because it displays a variety of “missing-row” reconstructions, which are only marginally stable. The ground state is usually found to have 1 × 2 translational symmetry, but a 1 × 3 form has also been seen. Between 1 × 2 and 1 × 3, a series of disordered structures has been recorded, which shows a slight preference for 1 × 5 periodicity. Under the preparation conditions used in this study, a stable 1 × 5 structure was found for Pt(1 1 0). Investigation by surface X-ray diffraction has led to a complete three-dimensional structure, which closely resembles an alternation of 1 × 2 and 1 × 3 unit cells. Pt(1 1 0) shows an interesting example of two “homometric” structures that are indistinguishable by diffraction, but are distinguishable by virtue of their subsurface relaxation pattern.