Electronic properties of clean unreconstructed 6H-SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy

The properties of the clean and unreconstructed 6H-SiC(0 0 0 1) and 6H-SiC surfaces were investigated by means of angle-resolved photoelectron spectroscopy (ARPES). These highly metastable surfaces were prepared by exposing hydrogen terminated surfaces to a high flux of synchrotron radiation. On both surfaces we find a band of surface states with 1 × 1 periodicity assigned to unsaturated Si and C dangling bonds located at 0.8 eV and 0.2 eV above the valence band maximum, respectively. Both states are located below the Fermi level. The dispersion of the surface bands amounts to 0.2 eV for the Si derived band and 0.7 eV for C derived band. It is suggested that the electronic properties of these surfaces are governed by strong correlation effects (Mott-Hubbard metal insulator transition). The results for the (0 0 0 1) surface are directly compared to Si-rich (√3 × √3)R30° reconstructed surface. Distinct differences in electronic structure of the (√3 × √3)R30° and 1 × 1 surfaces are observed.     

Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 × 2)

The growth of thin 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) films on a 3C-SiC(0 0 1)c(2 × 2) substrate has been studied by means of photoelectron spectroscopy (PES) and atomic force microscopy (AFM). In the first monolayer the molecules interact with the substrate mainly through the O atoms in the end groups of the molecule. The O atoms have a higher binding energy in the first molecular layer compared to the following layers. No chemical shifts are observed in the Si 2p spectra or in the C 1s spectra from the perylene core of the molecules. From the VB spectra and LEED pattern we conclude that the substrate remains in the c(2 × 2) reconstruction after PTCDA deposition. For thicker films a Stranski-Krastanov film growth was observed with flat lying molecules relative to the substrate.     

Signatures of epitaxial graphene grown on Si-terminated 6H-SiC (0 0 0 1)

Epitaxial graphene layers thermally grown on Si-terminated 6H-SiC (0 0 0 1) have been probed using Auger electron spectroscopy, Raman microspectroscopy, and scanning tunneling microscopy (STM). The average multilayer graphene thickness is determined by attenuation of the Si (L₂₃VV) and C (KVV) Auger electron signals. Systematic changes in the Raman spectra are observed as the film thickness increases from one to three layers. The most striking observation is a large increase in the intensity of the Raman 2D-band (overtone of the D-band and also known as the G′-band) for samples with a mean thickness of more than ∼1.5 graphene layers. Correlating this information with STM images, we show that the first graphene layer imaged by STM produces very little 2D intensity, but the second imaged layer shows a single-Lorentzian 2D peak near 2750 cm⁻¹, similar to spectra acquired from single-layer micromechanically cleaved graphene (CG). The 4-10 cm⁻¹ higher frequency shift of the G peak relative to CG can be associated with charge exchange with the underlying SiC substrate and the formation of finite size domains of graphene. The much greater (41-50 cm⁻¹) blue shift observed for the 2D-band may be correlated with these domains and compressive strain.     

Electronic structure of oxidized SiC(0 0 0 1) studied by inverse photoemission spectroscopy

Starting from the silicon rich (3 × 3) reconstruction of SiC(0 0 0 1) we prepared oxidized surfaces by hydrogen etching as well as by exposure to molecular oxygen. LEED pictures show a (1 × 1)-reconstructed surface with a faint structure being more pronounced for the hydrogen-etched surfaces. Auger spectra reveal a distinct change in the shape of the Si_LVV peak indicating the existence of Si-O bonds on the surface. Inverse photoemission (IPE) is employed to study the electronic structure above the Fermi level of the oxidized samples. On the hydrogen-etched surface difference spectra reveal a surface feature at 1 eV above the Fermi level that presumably originates from an isolated dangling bond on ordered patches of the oxidized surface.     

Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0 0 0 1)

We used spectroscopic photoemission and low-energy electron microscopy to measure two-dimensional (2D) emission patterns of secondary electrons (SEs) emitted from graphene layers formed on SiC(0 0 0 1). The 2D SE patterns measured at the SE energies of 0-50 eV show energy-dependent intensity distributions in the 6-fold symmetry. The SE patterns exhibit features ascribed to energy band structures of 2D free electrons, which would prove that electrons are partially confined in thin graphene layers even above the vacuum level.     

Self-aligned silicon quantum wires on Ag(1 1 0)

Upon deposition of silicon onto the (1 1 0) surface of a silver crystal we have grown massively parallel one-dimensional Si nanowires. They are imaged in scanning tunnelling microscopy as straight, high aspect ratio, nanostructures, all with the same characteristic width of 16 Å, perfectly aligned along the atomic troughs of the bare surface. Low energy electron diffraction confirms the massively parallel assembly of these self-organized nanowires. Photoemission reveals striking quantized states dispersing only along the length of the nanowires, and extremely sharp, two-components, Si 2p core levels. This demonstrates that in the large ensemble each individual nanowire is a well-defined quantum object comprising only two distinct silicon atomic environments. We suggest that this self-assembled array of highly perfect Si nanowires provides a simple, atomically precise, novel template that may impact a wide range of applications.     

Insulating properties of ultrathin KF layers on Cu(1 0 0): Resonant Auger spectroscopy

Solid-state effects in the creation and decay of K 2p core excitations in thin KF films on Cu(1 0 0) surface have been studied in resonant Auger spectra, excited using synchrotron radiation. The spectra of films of various thickness starting from a single monolayer were measured.The photoabsorption spectra reveal crystal field splitting already at film thickness of about 1 monolayer. The Auger decay spectra of the K 2p⁻¹3d core excitations in films of thickness up to 2 monolayers exhibit a band characteristic of the decay of core ionised states, showing that the excited electron delocalises into substrate before the core hole decays. In thicker films the coexistence of the decay of excited states in the bulk of the KF crystalline film and of ionised states at the KF-metal interface is observed, indicating that the charge transfer probability from the upper layers of the film into the metallic substrate is strongly reduced.     

Ultrathin ZrO2 films on Si-rich SiC(0 0 0 1)-(3 × 3): Growth and thermal stability

The growth and thermal stability of ultrathin ZrO₂ films on the Si-rich SiC(0 0 0 1)-(3 × 3) surface have been explored using photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The films were grown in situ by chemical vapor deposition using the zirconium tetra tert-butoxide (ZTB) precursor. The O 1s XAS results show that growth at 400 °C yields tetragonal ZrO₂. An interface is formed between the ZrO₂ film and the SiC substrate. The interface contains Si in several chemically different states. This gives evidence for an interface that is much more complex than that formed upon oxidation with O₂. Si in a 4+ oxidation state is detected in the near surface region. This shows that intermixing of SiO₂ and ZrO₂ occurs, possibly under the formation of silicate. The alignment of the ZrO₂ and SiC band edges is discussed based on core level and valence PES spectra. Subsequent annealing of a deposited film was performed in order to study the thermal stability of the system. Annealing to 800 °C does not lead to decomposition of the tetragonal ZrO₂ (t-ZrO₂) but changes are observed within the interface region. After annealing to 1000 °C a laterally heterogeneous layer has formed. The decomposition of the film leads to regions with t-ZrO₂ remnants, metallic Zr silicide and Si aggregates.     

Epitaxial SiC formation induced by medium energy ions on Si(1 1 1) at room temperature

In the search for silicon technology compatible substrate for III-nitride epitaxy, we present a proof-of-concept for forming epitaxial SiC layer on Si(1 1 1). A C/Si interface formed by ion sputtering is exposed to 100-1500 eV Ar⁺ ions, inducing a chemical reaction to form SiC, as observed by core-level X-ray photoelectron spectroscopy (XPS). Angle dependent XPS studies shows forward scattering feature that manifest the epitaxial SiC layer formation, while the valence band depicts the metal to insulator phase change.     

The structures of physisorbed and chemisorbed formic acid on Si(1 1 1)-7 × 7

The reaction of formic acid on Si(1 1 1)-7 × 7 was investigated using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and high-resolution electron energy loss spectroscopy (HREELS). The hydroxyl and carbonyl O 1s core levels of chemisorbed formic acid display chemical shifts of 2.4 and 0.2 eV respectively, compared with those of physisorbed molecules. The HREELS spectra of chemisorbed formic acid show the absence of stretching and bending modes of the O-H bond, the appearance of Si-H (2089 cm⁻¹) and the Si-O (680 cm⁻¹) stretching modes and the retained stretching mode of CO at 1703 cm⁻¹. Our results clearly suggest that formic acid dissociates to form monodentate formate species and H-atom on the adatom-rest atom pair of Si(1 1 1)-7 × 7.     

Adsorption of nitrogen-containing aromatic molecules on Si(1 1 1)-7 × 7

The adsorption configurations of pyrimidine and triazine on Si(1 1 1)-7 × 7 were investigated using high-resolution electron energy loss spectroscopy (HREELS) X-ray photoelectron spectroscopy and density functional theory calculations. The HREELS spectra of chemisorbed monolayer show the coexistence of the C(sp²)-H and C (sp³)-H stretching modes together with the observation of the unconjugated CN(C) vibrational feature suggesting that the carbon atom and its para-nitrogen atom of pyrimidine and triazine directly participate in binding with the surface to form Si-C and Si-N σ-linkages. The core levels of the C-atom and its opposite nitrogen atom directly binding with Si-atoms experience a down-shifting by 1.8-1.9 and 1.4-1.6 eV, respectively. These experimental findings are consistent with the density functional theory calculations indicating that the carbon atom and its para-nitrogen atom favorably link with the adjacent adatom and rest atom pair to form C-Si and N-Si linkages.     

Development of electronic structure of Ni thin films on Cu(0 0 1) surfaces

We have traced the development of the Ni electronic structure with thickness variation on flat and nano-structured Cu(0 0 1) surfaces by means of photoemission spectroscopy. The binding energy of the Ni 2p_3/2 main peak and satellite peak is found to have shifted monotonically in the direction opposite to each other, with the increase of Ni coverage. The reduced binding energy of the thin film’s main peak is strongly correlated to the Cu 4s/Ni 3d interfacial hybridization effect (s/d IHE) and the narrowing of the d band with the reduction of dimensions, while the increased satellite binding energy results from the combination of interface hybridization and expansion of an extended 4s-like state towards the vacuum. The center of the Ni d_xy band is predicted to shift closer to the Fermi level with increasing film thickness. Enhanced satellite intensity in thin films is observed, correlating to the narrowing of the d band with decreased film thickness. Through comparison of Ni films grown on flat versus nano-structured Cu(0 0 1) surfaces, the mixing of Cu and Ni atoms is found to be enhanced at the terrace edge region and consequently a larger s/d IHE is predicted for Ni on the nano-structured surface.     

Core level photoemission and STM characterization of Ta/Si(1 1 1)-7 × 7 interfaces

We present the results of scanning tunneling microscopy (STM) and photoemission spectroscopy (PES) of the Ta/Si(1 1 1)-7 × 7 system after deposition of Ta at substrate temperatures from 300 to 1250 K. The coverage of Ta varied from 0.05 up to 2.5 of a monolayer (ML). STM shows that at 300 K and coverage less than 1 ML, a disordered chemisorbed phase is formed. Deposition on a hot surface (above 500 K) produces round 3D clusters randomly distributed on the surface. Cluster height and their diameter are found to change drastically with annealing temperature and the Ta coverage. Analysis of photoemission data of the Si 2p core levels shows that at room temperature and at coverage ?1 ML core level binding energy shifts and intensity variations of Si surface related components are observed, which clearly indicate that the reaction starts already at 300 K. Shifts in the binding energy, changes of the peak shapes and intensity of the Ta 4f doublet at higher temperatures can be explained by the formation of stable silicide on the surface.     

The mechanism of amine formation on Si(1 0 0) activated with chlorine atoms

The dissociation of NH₃ on a Si(1 0 0) surface activated with Cl atoms was investigated using X-ray photoelectron spectroscopy. Gas phase UV-Cl₂ (0.1-10 Torr Cl₂ for 10-600 s under 1000 W Xe lamp illumination) completely replaced the H-termination on aqueous-cleaned Si(1 0 0) with 0.82 ± 0.06 ML of Cl at 298 K. A single spin-orbit split Cl 2p doublet indicated that the Cl atoms were bound to Si dimer atoms, forming silicon monochloride (Cl-Si-Si-Cl). Exposing the Cl-terminated surface at 348 K to NH₃ (1-1000 Torr for 5-60 min) replaced one Cl atom with one N atom up to a coverage of 0.33 ± 0.02 ML. Cl atoms lowered the activation energy barrier for reaction to form a primary amine (Si-NH₂). Oxygen was coadsorbed due to competition by H₂O contamination. The presence of Cl on the surface even after high NH₃ exposures is attributed to site blocking and electrostatic interactions among neighboring Cl-Si-Si-NH₂ moieties. The results demonstrate a low temperature reaction pathway for depositing N-bearing molecules on Si surfaces.     

Initial stages of iron silicide formation on the Si(1 0 0)2 × 1 surface

The initial stages of iron silicide growth on the Si(1 0 0)2 × 1 surface during solid-phase synthesis were investigated by photoelectron spectroscopy using synchrotron radiation. The experiments were made on iron films of 1-50 monolayer (ML) thickness in the temperature range from room temperature to 750 °С. Our results support the existence of three stages in the Fe deposition on Si(1 0 0) at room temperature, which include formation of the Fe-Si solid solution, Fe₃Si silicide and an iron film. The critical Fe dose necessary for the solid solution to be transformed to the silicide is found to be 5 ML. The solid-phase reaction was found to depend on the deposited metal dose. At 5 ML, the reaction begins at 60 °С, and the solid-phase synthesis leads to the formation of only metastable silicides (FeSi with the CsCl-type structure, γ-FeSi₂ and α-FeSi₂). A specific feature of this process is Si segregation on the silicide films. At a thickness of 15 ML and more, we observed only stable phases, namely, Fe₃Si, ε-FeSi and β-FeSi₂.     

Oxidation of ultrathin indium layers on W(1 1 0)--a core-level photoemission study

We have studied the reaction of ultrathin In overlayers on W(1 1 0) with molecular oxygen at 300 K. At a coverage of 0.25 monolayers (ML) oxygen first chemisorbs dissociatively at free tungsten sites and oxidation of In occurs with some delay. At an In coverage of 1.2 ML complete oxidation of the closed overlayer is observed. Layers of 3 ML thickness first show rapid transformation from In to an In₂O₃-like species until an oxide monolayer is formed. Further oxidation occurs at much reduced rate. No oxygen-induced restructuring is observed for In at 300 K, in contrast to the response of Ag monolayers deposited on W(1 1 0).     

Photoemission from the valence bands of Ce(1 1 1) on W(1 1 0)

We report a photoelectron spectroscopic study of the valence bands of epitaxial Ce(1 1 1) films grown on W(1 1 0) at room temperature. The evolution of γ → α → γ like phase transition of Ce is observed with increasing Ce coverage and the valence-band structures of γ-like Ce film are determined. The 4f and 5d photoemission cross sections in the photon energy region from 20 eV to 130 eV are presented and discussed. A 5d-like surface state and a 6s band bottom are identified.     

Growth of manganese silicide films by co-deposition of Mn and Si on Si(1 1 1): A spectroscopic and morphological investigation

MnSi is a ferromagnetic compound with a Curie temperature of 29 K. Recent theoretical studies predict that 2 ML of MnSi epitaxially grown on Si show a ferromagnetic metallic ground state with spin polarization of about 50%. This would allow the development of spintronic devices based on the injection of spin-polarized current from a ferromagnetic metal into a semiconductor.In this context the possibility of growing in situ MnSi on the Si(1 1 1) surface has been explored. Thermal reaction, crystalline structure and electronic properties of the grown films have been studied in situ by photoemission spectroscopy (PES), X-ray absorption spectroscopy (XAS), and low energy electron diffraction (LEED). Depositing a thin film of Mn on Si(1 1 1) the formation of ordered islands (with dimensions dependent on the amount of deposited Mn) is driven by annealing at selected temperatures, as already observed. Our preliminary studies show that by simultaneously depositing Mn and Si in 1:1 stoichiometry on Si(1 1 1) a large improvement in the homogeneity of the MnSi films is achieved.     

Irreversible structural transformation of Si(1 1 4)-2 × 1 induced by subsurface carbon

Using scanning tunneling microscopy (STM), it has been found that the reconstruction of Si(1 1 4) is transformed irreversibly from a 2 × 1 structure composed of dimer (D), rebonded atom (R), and tetramer (T) rows (phase A) to a different kind of 2 × 1 structure composed of D, T, and T rows (phase B) by C incorporation. It has been confirmed by high-resolution synchrotron core-level photoemission spectroscopy (PES) that such an irreversible structural transformation is due to stable subsurface C atoms. They induce anisotropic compressive stress on the surface, which results in insertion of Si dimers to an R row to form a T row.     

On the geometrical and electronic structure of an ultra-thin crystalline silica film grown on Mo(1 1 2)

The atomic structure of a well-ordered silica film grown on a Mo(1 1 2) single crystal substrate is discussed in detail using the experimental and theoretical results available to date. New photoelectron spectroscopy results using synchrotron radiation and ultraviolet spectroscopy data are presented. The analysis unambiguously shows that the ultra-thin silica film consists of a two-dimensional network of corner-sharing [SiO₄] tetrahedra chemisorbed on the unreconstructed Mo(1 1 2) surface. The review also highlights the important role of theoretical calculations in the determination of the atomic structure of the silica films and in interpretation of experimental data.