Oxidation of Pt(1 0 0)-hex-R0.7° by gas-phase oxygen atoms

We utilized temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (ELS), and low energy electron diffraction (LEED) to investigate the oxidation of Pt(1 0 0)-hex-R0.7° at 450 K. Using an oxygen atom beam, we generated atomic oxygen coverages as high as 3.6 ML (monolayers) on Pt(1 0 0) in ultrahigh vacuum (UHV), almost 6 times the maximum coverage obtainable by dissociatively adsorbing O₂. The results show that oxidation occurs through the development of several chemisorbed phases prior to oxide growth above about 1 ML. A weakly bound oxygen state that populates as the coverage increases from approximately 0.50 ML to 1 ML appears to serve as a necessary precursor to Pt oxide growth. We find that increasing the coverage above about 1 ML causes Pt oxide particle growth and significant surface disordering. Decomposition of the Pt oxide particles produces explosive O₂ desorption characterized by a shift of the primary TPD feature to higher temperatures and a dramatic increase in the maximum desorption rate with increasing coverage. Based on thermodynamic considerations, we show that the thermal stability of the surface Pt oxide on Pt single crystal surfaces significantly exceeds that of bulk PtO₂. Furthermore, we attribute the high stability and the acceleratory decomposition rates of the surface oxide to large kinetic barriers that must be overcome during oxide formation and decomposition. Lastly, we present evidence that structurally similar oxides develop on both Pt(1 1 1) and Pt(1 0 0), therefore concluding that the properties of the surface Pt oxide are largely insensitive to the initial structure of the Pt single crystal surface.     

Formation and hydrogenation of p(2 × 2)-N on Pt(1 1 1)

The formation of a well-ordered p(2 × 2) overlayer of atomic nitrogen on the Pt(1 1 1) surface and its reaction with hydrogen were characterized with reflection absorption infrared spectroscopy (RAIRS), temperature programmed desorption (TPD), low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS). The p(2 × 2)-N overlayer is formed by exposure of ammonia to a surface at 85 K that is covered with 0.44 monolayer (ML) of molecular oxygen and then heating to 400 K. The reaction between ammonia and oxygen produces water, which desorbs below 400 K. The only desorption product observed above 400 K is molecular nitrogen, which has a peak desorption temperature of 453 K. The absence of oxygen after the 400 K anneal is confirmed with AES. Although atomic nitrogen can also be produced on the surface through the reaction of ammonia with an atomic, rather than molecular, oxygen overlayer at a saturation coverage of 0.25 ML, the yield of surface nitrogen is significantly less, as indicated by the N₂ TPD peak area. Atomic nitrogen readily reacts with hydrogen to produce the NH species, which is characterized with RAIRS by an intense and narrow (FWHM ∼ 4 cm⁻¹) peak at 3322 cm⁻¹. The areas of the H₂ TPD peak associated with NH dissociation and the XPS N 1s peak associated with the NH species indicate that not all of the surface N atoms can be converted to NH by the methods used here.     

Phase mixing and phase separation accompanying the catalytic oxidation of CO on Ir{1 0 0}

The co-adsorption of CO and O on the unreconstructed (1 × 1) phase of Ir{1 0 0} was examined by low energy electron diffraction (LEED) and temperature programmed desorption (TPD). When CO is adsorbed at 188 K onto the Ir{1 0 0} surface precovered with 0.5 ML O, a mixed c(4 × 2)-(2O + CO) overlayer is formed. All CO is oxidised upon heating and desorbs as CO₂ in three distinct stages at 230 K, 330 K and 430 K in a 2:1:2 ratio. The excess oxygen left on the surface after all CO has reacted forms an overlayer with a LEED pattern with p(2 × 10) periodicity. This overlayer consists of stripes with a local p(2 × 1)-O arrangement of oxygen atoms separated by stripes of uncovered Ir. When CO is adsorbed at 300 K onto the surface precovered with 0.5 ML O an apparent (2 × 2) LEED pattern is observed. LEED IV analysis reveals that this pattern is a superposition of diffraction patterns from islands of c(2 × 2)-CO and p(2  × 1)-O structures on the surface. Heating this co-adsorbed overlayer leads to the desorption of CO₂ in two stages at 330 K and 430 K; the excess CO (0.1 ML) desorbs at 590 K.LEED IV structural analysis of the mixed c(4 × 2) O and CO overlayer shows that both the CO molecules and the O atoms occupy bridge sites. The O atoms show significant lateral displacements of 0.14 Å away from the CO molecules; the C-O bond is slightly expanded with respect to the gas phase (1.19 Å); the modifications of the Ir substrate with respect to the bulk-terminated surface are very small.     

Sulphur overlayers on the Au(1 1 0) surface: LEED and TPD study

The adsorption and desorption of sulphur on the clean reconstructed Au(1 1 0)-(1 × 2) surface has been studied by low energy electron diffraction, Auger electron spectroscopy and temperature programmed desorption. The results obtained show a complex behaviour of the S/Au(1 1 0) system during sulphur desorption at different temperatures. Two structures of the stable ordered sulphur overlayer on the Au(1 1 0) surface, p(4 × 2) and c(4 × 4), were found after annealing the S/Au(1 1 0) system at 630 K and 463 K, respectively. The corresponding sulphur coverage for these overlayers was estimated by AES signal intensity analysis of the Au NOO and S LMM Auger lines to be equal to 0.13 ML and 0.2 ML, respectively. Both sulphur structures appear after removing an excess of sulphur, which mainly desorbs at 358 K as determined from TPD spectra. Furthermore, it was not possible to produce the lower coverage p(4 × 2) sulphur structure by annealing the c(4 × 4) surface. In the case of the p(4 × 2) S overlayer on the Au(1 1 0)-(1 × 2) surface it is proposed that the sulphur is attached to “missing row” sites only. The c(4 × 4) S overlayer arises via desorption of S₂ molecules that are formed on the surface due to mobility of sulphur atoms after a prolonged anneal.     

Adsorption and reaction of methanethiol on the Ru(0 0 0 1)-p(2 × 2)O surface: A TPD and XPS study

Methanethiol adsorbed on Ru(0 0 0 1)-p(2 × 2)O has been studied by TPD and XPS. The dissociation of methanethiol to methylthiolate and hydrogen at 90 K is evidenced by the observation of hydroxyl and water. The saturation coverage of methylthiolate is ∼0.15 ML, measured by both XPS and TPD. A detailed analysis suggests that only the hcp-hollow sites have been occupied. Upon annealing the surface, water and hydroxyl desorb from the surface at ∼210 K. Methylthiolate decomposes to methyl radical and atomic sulphur via C-S cleavage between 350 and 450 K. Some methyl radicals (0.05 ML) have been transferred to Ru atoms before they decompose to carbon and hydrogen. The rest of methyl radicals desorb as gaseous phase. No evidence for the transfer of methyl radical to surface oxygen has been found.     

Sulfur poisoning of the CO adsorption on Co(0 0 0 1)

CO adsorption on a sulfur covered cobalt surface at 185 K has been studied using XPS, TDS, LEED, and WF measurements. As in the case of CO adsorption on the clean Co(0 0 0 1) surface, CO adsorbs and desorbs molecularly and no dissociation was observed. The saturation coverage of CO decreases linearly from 0.54 ML to 0.27 ML when the S pre-coverage increases to 0.25 ML. The WF increased during CO adsorption, but did not reach the value obtained for CO adsorption on the clean surface. The smaller work function change is explained by the reduced adsorption of CO on the sulfur-precovered surface. A reduction in the activation energy of desorption for CO from 113 kJ/mol to 88 kJ/mol was observed indicating weaker bonding of the CO molecules to the surface. The behavior of the CO/S/Co(0 0 0 1) system was explained by a combination of steric and electronic effects.     

First-principles study of oxygenated diamond (0 0 1) surfaces with and without hydrogen

The structural characterization of oxygenated diamond (0 0 1) surface with and without H-presence has been investigated by the density-functional theory within the generalized gradient approximation and the plane-wave pseudopotential method. It is shown that, without the H, the O-bridge site has lower energy than the O-on-top site for both half and fully monolayer (ML) oxygen coverage. For hydrogenated diamond (0 0 1) surfaces, we found for half ML O coverage, a more stable (2 × 2):0.5H&0.5(OH) phase than the previously reported (2 × 1):0.5H&0.5(OH) phase [H. Tamura, H. Zhou, K. Sugisako, Y. Yokoi, S. Takami, M. Kubo, K. Teraishi, A. Miyamoto, A. Imamura, M.N. Gamo, T. Ando, Phys. Rev. B 61 (2000) 11025]. Furthermore, at one ML O coverage, a (2 × 2):(OH) phase is the most stable structure than the previously reported (2 × 1):(OH) phase. With the increase of the (OH) coverage, the importance of the hydrogen bonds increases in terms of stabilizing these structures.     

The adsorption of and reaction of NO2 on Ag(1 1 1)-p(4 × 4)-O and formation of surface nitrate

The adsorption and reaction of nitrogen dioxide on the Ag(1 1 1)-p(4 × 4)-O surface has been investigated with RAIRS, TPRS and STM. At 300 K NO₂ initially reacts with the oxygen overlayer to form nitrate in p(3 × 3) and p(4 × 4) structures, which convert to a new p(3 × 3) at saturation coverage. Surface pitting during nitrate adsorption is suggestive of the incorporation of silver atoms into the NO₃ structure. With heating NO₃ decomposes into NO₂ and O at 396 K and 497 K, and oxygen desorbs at 578 K.     

Core level photoemission and STM characterization of Ta/Si(1 1 1)-7 × 7 interfaces

We present the results of scanning tunneling microscopy (STM) and photoemission spectroscopy (PES) of the Ta/Si(1 1 1)-7 × 7 system after deposition of Ta at substrate temperatures from 300 to 1250 K. The coverage of Ta varied from 0.05 up to 2.5 of a monolayer (ML). STM shows that at 300 K and coverage less than 1 ML, a disordered chemisorbed phase is formed. Deposition on a hot surface (above 500 K) produces round 3D clusters randomly distributed on the surface. Cluster height and their diameter are found to change drastically with annealing temperature and the Ta coverage. Analysis of photoemission data of the Si 2p core levels shows that at room temperature and at coverage ?1 ML core level binding energy shifts and intensity variations of Si surface related components are observed, which clearly indicate that the reaction starts already at 300 K. Shifts in the binding energy, changes of the peak shapes and intensity of the Ta 4f doublet at higher temperatures can be explained by the formation of stable silicide on the surface.     

Sulfur-induced mobilization of Au surface atoms on Au(1 1 1) studied by real-time STM

The interaction of sulfur with gold surfaces has attracted considerable interest due to numerous technological applications such as the formation of self-assembled monolayers and as a chemical sensor. Here, we report on the interaction of sulfur with Au(1 1 1) at two different temperatures (300 K and 420 K) studied by real-time scanning tunnelling microscopy, low energy electron diffraction and Auger electron spectroscopy. In the low coverage regime (<0.1 ML), S adsorption lifts the herringbone reconstruction of the clean Au(1 1 1) surface indicating a lateral expansion of the surface layer. An ordered (√3 × √3)R30° sulfur adlayer develops as the coverage reaches ∼0.3 ML. At higher S coverages (>0.3 ML) gold surface atoms are removed from regular terrace sites and incorporated into a growing gold sulfide phase. At 300 K this process leads to the formation of a rough pit and mound surface morphology. This gold sulfide exhibits short-range order and an incommensurate, long-range ordered AuS phase develops upon annealing at 450-525 K. In contrast, formation of an ordered AuS phase via rapid step-retraction rather than etch pit formation is observed during S-interaction with Au(1 1 1) surfaces at 420 K. Our results shed new light on the S-Au(1 1 1) interaction.     

Hydrogen adsorption and diffusion on Pd(1 1 1)

The adsorption, diffusion and ordering of hydrogen on Pd(1 1 1) was studied by scanning tunneling microscopy in the temperature range of 37-90 K. At low coverage isolated hydrogen atoms were observed. They formed √3×√3-1H islands as the coverage increased. Above 1/3 monolayer (ML) coverage areas of a new phase with √3×√3-2H structure were formed, with both structures coexisting between 1/3 and 2/3 ML. Finally a 1 × 1 structure was formed after high exposures of hydrogen above 50 K, with a coverage close to 1 ML. Atomically resolved images reveal that H binds to fcc hollow sites.     

Eu- and Yb-induced reconstructions on a vicinal Si(1 0 0) surface

Early stages of rare-earth metal (Yb and Eu) growth on a vicinal, single-domain Si(1 0 0)2 × 1 surface have been studied in the coverage range of 0.1-0.3 monolayer (ML) by low energy electron diffraction, scanning tunneling microscopy, and synchrotron radiation photoemission spectroscopy. We show that Yb induces the 2 × 3 periodicity in the whole range of coverage studied. The 2 × 3 reconstruction coexists with the local 3 × 2/4 × 2 structure at about 0.2 ML of Yb. In contrast, Eu forms the 3 × 2 periodicity at 0.1-0.2 ML, whereas this structure is converted into the 2 × 3 phase at about 0.3 ML. The atomic arrangement and electronic properties of these reconstructions and the adsorbate-mediated modification of surface morphology are investigated.     

Ethylene hydrogenation on Ni(1 0 0) surface

The hydrogenation of ethylene on Ni(1 0 0) surface has been studied by TDS. The decrease in the bonding energy with increasing coverage is revealed for both of adsorbed hydrogen and ethylene by the shift of desorption to lower temperatures. Ethane formation is only observed on the preadsorbed hydrogen coverage exceeding 0.5 monolayer (ML), coupled with the growth of H₂ shoulder peak at lower temperatures. Further increase of H coverage to saturation reduces the bonding energy of subsequently adsorbed ethylene by 15 kJ/mol and decreases the saturation coverage of ethylene to about one-third on the clean surface. This leads to the shift of ethane desorption from 250 to 220 K and an appearance of additional ethane peak at 180 K. The latter ethane formation coincides with the hydrogenation of surface ethyl species derived from ethyl iodide as a precursor. It indicates that the rate of ethyl formation on the surface would be comparable to that of subsequent hydrogen addition to the surface ethyl species in the hydrogenation of ethylene when the preadsorbed hydrogen coverage approaches 1.0 ML.     

Morphology of Ni ultrathin films on Mo(1 1 0) and W(1 0 0) studied by LEED and STM

The morphology of ultrathin Ni films on Mo(1 1 0) and W(1 0 0) has been studied by low-energy electron diffraction and scanning tunneling microscopy. Ni films grow pseudomorphically on Mo(1 1 0) at 300 K for a coverage of 0.15 ML. A (8 × 1) structure is found at 0.4 ML, which develops into a (7 × 1) structure by 0.8 ML. The film undergoes a structural change to fcc Ni(1 1 1) at 6 ML. The growth mode switches from layer-by-layer to Stranski-Krastanov between 4 ML and 6 ML. Annealing at around 850 K results in alloying of submonolayer films with the substrate, while for higher coverages the Ni agglomerates into nanowedge islands. Ni films grow pseudomorphically on W(1 0 0) up to a coverage of around 2 ML at 300 K, above which there is a structural change from bcc to hcp Ni with the epitaxial relationship . This is accompanied by the formation of orthogonal domains of uniaxial strain-relieving dislocations from the third layer of the film. For coverages up to 1 ML the growth proceeds by formation of two-dimensional islands, but shifts to three-dimensional growth by 2 ML with rectangular islands aligned along the 〈0 1 1〉 substrate directions. Annealing at around 550 K results in agglomeration of Ni into larger islands and increasing film roughness.     

Anomalous adsorption of Cs on Pt(1 1 1)

The adsorption of Cs on Pt(1 1 1) surfaces and its reactivity toward oxygen and iodine for coverages θ_Cs?0.15 is reported. These surfaces show unusual “anomalous” behavior compared to higher coverage surfaces. Similar behavior of K on Pt(1 1 1) was previously suggested to involve incorporation of K into the Pt lattice. Despite the larger size of Cs, similar behavior is reported here. Anomalous adsorption is found for coverages lower than 0.15 ML, at which point there is a change in the slope of the work function. Thermal Desorption Spectroscopy (TDS) shows a high-temperature Cs peak at 1135 K, which involves desorption of Cs⁺ from the surface.The anomalous Cs surfaces and their coadsorption with oxygen and iodine are characterized by Auger Electron Spectroscopy (AES), TDS and Low Electron Energy Diffraction (LEED). Iodine adsorption to saturation on Pt(1 1 1)(anom)-Cs give rise to a sharp LEED pattern and a distinctive work function increase. Adsorbed iodine interacts strongly with the Cs and weakens the Cs-Pt bond, leading to desorption of Cs_xI_y clusters at 560 K. Anomalous Cs increases the oxygen coverage over the coverage of 0.25 ML found on clean Pt. However, the Cs-Pt bond is not significantly affected by coadsorbed oxygen, and when oxygen is desorbed the anomalous cesium remains on the surface.     

Condensation and desorption of nickel tetra-carbonyl on Cu(1 1 0)

The condensation and desorption of nickel tetra-carbonyl (Ni(CO)₄) on Cu(1 1 0) has been studied by thermal desorption spectroscopy. A quite unusual evolution of the desorption spectra is observed. First a desorption peak appears at around 140 K, which disappears with increasing coverage and merges into a clearly separated new desorption peak at around 150 K. This transformation takes place at a coverage of about 10% of a monolayer. It is suggested that the low temperature peak is due to desorption of monomers. With increasing coverage nucleation and growth of multilayer islands starts, from which the desorption energy is higher due to the higher coordination of the carbonyl molecules, compared to that of the monomers. Evaluation of the multilayer desorption spectra yields a desorption energy of 57.9 kJ/mol (0.60 eV) and an unusually high frequency factor of 1.6 × 10¹⁹ s⁻¹.     

The adsorption of 1,3-butadiene on Ag(1 1 1): A TPD/IRAS study and importance of lateral interactions

Temperature programmed desorption (TPD) and infrared reflection absorption spectroscopy (IRAS) have been used to study the adsorption, desorption, molecular orientation and conformation of 1,3-butadiene on Ag(1 1 1) at 80 K. Butadiene adsorbs weakly as an s-trans conformer with the first layer oriented parallel to the silver surface and desorbs without decomposition. A very narrow line shape of the out-of-plane modes at low submonolayer coverage indicates molecular ordering within the diluted adsorbed layer, presumably through weak π-bonding interaction with the surface and intermolecular repulsive interaction. Compression within the first layer at coverages above 0.5 ML is driven by repulsive interaction as seen in both TPD and IRAS data. The IR intensity rollover and peak broadening, together with a significant shift in the TPD peak to lower temperature, indicate a reorientation of the butadiene molecule. Adsorption in the second- and multilayer is characterized by distinct IR frequency shifts and crystal field splitting effects similar to those reported for solid butadiene.     

The adsorption of NO on an oxygen pre-covered Pt(1 1 1) surface: in situ high-resolution XPS combined with molecular beam studies

Adsorption of NO on a Pt(1 1 1) surface pre-covered with a p(2 × 2) atomic oxygen layer has been studied in situ by high-resolution X-ray photoelectron spectroscopy and temperature-programmed XPS using third-generation synchrotron radiation at BESSY II, Berlin, combined with molecular beam techniques and ex situ by low energy electron diffraction and temperature-programmed desorption. O 1s XP spectra reveal that an ordered p(2 × 2)-O layer dramatically changes the adsorption behavior of NO as compared to the clean surface. The atomic oxygen occupies fcc hollow sites, and therefore blocks NO adsorption on these sites, which are energetically preferred on clean Pt(1 1 1). As a consequence, NO populates on-top sites at low coverage. At 110 K for higher coverages, NO can additionally adsorb on hcp hollow sites, thereby inducing a shift of the O 1s binding energy of atomic oxygen towards lower energies by about 0.25 eV. The bond strength of the hcp hollow NO species to the substrate is weakened by the presence of atomic oxygen. A sharp p(2 × 2) LEED pattern is observed for NO adsorption on the oxygen pre-covered surface, up to saturation coverage. The total saturation coverage of NO on Pt(1 1 1) pre-covered with varying amounts of oxygen (below 0.25 ML) decreases linearly with the coverage of oxygen. The initial sticking coefficient of NO is reduced from 0.96 on clean Pt(1 1 1) to 0.88 on a p(2 × 2) oxygen pre-covered surface.     

K-induced surface structural change of Si(1 1 1)-7 × 7 probed by second-harmonic generation

The growth of thin K films on Si(1 1 1)-7 × 7 has been investigated by selecting the input and output polarizations of second-harmonic generation (SHG) at room temperature (RT) and at an elevated temperature of 350 °C. The SH intensity at 350 °C showed a monotonic increase with K coverages up to a saturated level, where low energy electron diffraction (LEED) showed a 3 × 1 reconstructed structure. The additional deposition onto the K-saturated surface at 350 °C showed only a marginal change in the SH intensity. These variations are different from the multi-component variations up to 1 ML and orders of magnitude increase due to excitation of plasmons in the multilayers at RT. The variations of SHG during desorption of K at 350 °C showed a two-step decay with a marked shoulder which most likely corresponds to the saturation K coverage of the Si(1 1 1)-3 × 1-K surface. The dominant tensor elements contributing to SHG are also identified for each surface.     

Oxidation of ultrathin indium layers on W(1 1 0)--a core-level photoemission study

We have studied the reaction of ultrathin In overlayers on W(1 1 0) with molecular oxygen at 300 K. At a coverage of 0.25 monolayers (ML) oxygen first chemisorbs dissociatively at free tungsten sites and oxidation of In occurs with some delay. At an In coverage of 1.2 ML complete oxidation of the closed overlayer is observed. Layers of 3 ML thickness first show rapid transformation from In to an In₂O₃-like species until an oxide monolayer is formed. Further oxidation occurs at much reduced rate. No oxygen-induced restructuring is observed for In at 300 K, in contrast to the response of Ag monolayers deposited on W(1 1 0).