Core-level shifts at the Pt/W(1 1 0) monolayer bimetallic interface

We have measured W and Pt 4f_7/2 core-level photoemission spectra from interfaces formed by ultrathin Pt layers on W(1 1 0), completing our core-level measurements of W(1 1 0)-based bimetallic interfaces involving the group-10 metals Ni, Pd, and Pt. With increasing Pt coverage the sequence of W spectra can be described using three interfacial core-level peaks with binding-energy (BE) shifts (compared to the bulk) of −0.220 ± 0.015, −0.060 ± 0.015, and +0.110 ± 0.010 eV. We assign these features to 1D, 2D pseudomorphic (ps), and 2D closed-packed (cp) Pt phases, respectively. For ∼1 ps ML the Pt 4f_7/2 BE is 71.40 ± 0.02 eV, a shift of +0.46 ± 0.09 eV with respect to the BE of bulk Pt metal. The W 4f_7/2 core-level shifts induced by all three adsorbates are semiquantitatively described by the Born-Haber-cycle based partial-shift model of Nilsson et al. [39]. As with Ni/W(1 1 0), the difference in W 4f_7/2 binding energies between ps and cp Pt phases has a large structural contribution. The Pt 4f lineshape is consistent with a small density of states at the Fermi level, reflective of the Pt monolayer having noble-metal-like electronic structure.     

Oxidation of ultrathin indium layers on W(1 1 0)--a core-level photoemission study

We have studied the reaction of ultrathin In overlayers on W(1 1 0) with molecular oxygen at 300 K. At a coverage of 0.25 monolayers (ML) oxygen first chemisorbs dissociatively at free tungsten sites and oxidation of In occurs with some delay. At an In coverage of 1.2 ML complete oxidation of the closed overlayer is observed. Layers of 3 ML thickness first show rapid transformation from In to an In₂O₃-like species until an oxide monolayer is formed. Further oxidation occurs at much reduced rate. No oxygen-induced restructuring is observed for In at 300 K, in contrast to the response of Ag monolayers deposited on W(1 1 0).     

Photoemission from the valence bands of Ce(1 1 1) on W(1 1 0)

We report a photoelectron spectroscopic study of the valence bands of epitaxial Ce(1 1 1) films grown on W(1 1 0) at room temperature. The evolution of γ → α → γ like phase transition of Ce is observed with increasing Ce coverage and the valence-band structures of γ-like Ce film are determined. The 4f and 5d photoemission cross sections in the photon energy region from 20 eV to 130 eV are presented and discussed. A 5d-like surface state and a 6s band bottom are identified.     

Pt interactions with annealed and chemically-etched Nb-doped SrTiO3(0 0 1) surfaces: Metal/oxide surface chemical effects on band bending behavior

XPS and LEED have been used to characterize the interaction of sputter-deposited Pt (maximum coverage <5 ML) with Nb-doped SrTiO₃(0 0 1) surfaces prepared either by annealing in O₂ and then UHV, or by chemical-etching in aqua regia. The annealed surface exhibits an ordered (1 × 1) LEED pattern, with additional diffraction spots and streaks indicating the presence of oxygen vacancies. Increasing Pt coverage results in the decrease of the observed Pt(4f_7/2) binding energy and the uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to smaller binding energies, as expected for Pt cluster growth and surface-to-Pt charge donation on an n-type semiconductor. The etched surface is disordered, and exhibits a hydroxylated surface with a contaminant C film of ∼23 ? average thickness. Pt deposition on the etched surface results in an immediate decrease in the intensity of the OH feature in the O(1s) spectrum, and a uniform shift of the Sr(3d), Ti(2p) and O(1s) levels to larger binding energies with increasing Pt coverage. The observed Pt(4f_7/2) binding energy on the etched surface (∼72 eV) is independent of Pt coverage, and indicates substantial electronic charge donation from the Pt to surface hydroxyl species. The observation of band bending towards higher binding energies upon Pt deposition (behavior normally associated with p-type semiconductors) demonstrates that sub-monolayer quantities of adsorbates can alter metal/oxide interfacial charge transfer and reverse the direction of band bending, with important consequences for Schottky barrier heights and device applications.     

Oxygen-induced p(3 × 1) reconstruction of the W(1 0 0) surface

The oxidation of the W(1 0 0) surface at elevated temperatures has been studied using room temperature STM and LEED. High exposure of the clean surface to O₂ at 1500 K followed by flash-annealing to 2300 K in UHV results in the formation of a novel p(3 × 1) reconstruction, which is imaged by STM as a missing-row structure on the surface. Upon further annealing in UHV, this surface develops a floreted LEED pattern characteristic of twinned microdomains of monoclinic WO_x, while maintaining the p(3 × 1) missing-row structure. Atomically resolved STM images of this surface show a complex domain structure with single and double W〈0 1 0〉 rows coexisting on the surface in different domains.     

Sticking of atomic hydrogen on the tungsten (0 0 1) surface

The sticking of hydrogen atoms with kinetic energies in the range 0.003-10 eV on a clean (0 0 1) tungsten surface has been investigated using molecular dynamics simulations. The atoms are found to stick to the surface at 0 and 300 K, with a sticking coefficient smaller than 0.6 for kinetic energies higher than 3 meV. The adsorption sites for H on the W(0 0 1) surface are also presented. The dominant site is in perfect agreement with the experimentally found bridge site.     

Driving force for the WO3(0 0 1) surface relaxation

The optimized structure of the WO₃(0 0 1) surface with various types of termination ((1 × 1)O, (1 × 1)WO₂, and c(2 × 2)O) has been simulated using density functional theory with the Perdew-Wang 91 gradient corrected exchange-correlation functional. While the energy of bulk WO₃ depends weakly on the distortions and tilting of the WO₆ octahedra, relaxation of the (0 0 1) surface results in a significant decrease of surface energy (from 10.2 × 10⁻² eV/Ų for the cubic ReO₃-like, c(2 × 2)O-terminated surface to 2.2 × 10⁻² eV/Ų for the relaxed surface). This feature illustrates a potential role of surface relaxation in formation of crystalline nano-size clusters of WO₃. The surface relaxation is accompanied by a dramatic redistribution of the density of states near the Fermi level, in particular a transformation of surface electronic states. This redistribution is responsible for the decrease of electronic energy and therefore is suggested to be the driving force for surface relaxation of the WO₃(0 0 1) surface and, presumably, similar surfaces of other transition metal oxides.     

Growth and oxidation of Cr films on the W(1 0 0) surface

The growth and oxidation of Cr films on the W(1 0 0) surface have been studied with low energy electron microscopy (LEEM) and diffraction (LEED). Cr grows in a Stranski-Krastanov (SK) mode above about 550 K and in a kinetically limited layer-by-layer mode at lower temperature. Stress relief in the highly strained pseudomorphic (ps) Cr film appears to be achieved by the formation of (4 × 4) periodic inclusions during the growth of the third layer between 575 and 630 K and by growth morphological instabilities of the third layer at higher temperature. Kinetic or stress-induced roughening is observed at lower temperature. In the SK regime, three-dimensional (3D) Cr islands nucleate after the growth of three Cr layers. 3D island nucleation triggers dewetting of one layer from the surrounding Cr film. Thus, two ps Cr layers are thermodynamically stable. However, one and two layer ps Cr films are unstable during oxidation. 3D clusters, that produce complex diffraction features and are believed to be Cr₂O₃, are formed during oxidation of one Cr layer at elevated temperature, T ? 790 K. The single layer Cr film remains intact during oxidation at T ? 630 K. 3D bulk Cr clusters are formed predominantly during oxidation of two ps Cr layers.     

Morphology of Ni ultrathin films on Mo(1 1 0) and W(1 0 0) studied by LEED and STM

The morphology of ultrathin Ni films on Mo(1 1 0) and W(1 0 0) has been studied by low-energy electron diffraction and scanning tunneling microscopy. Ni films grow pseudomorphically on Mo(1 1 0) at 300 K for a coverage of 0.15 ML. A (8 × 1) structure is found at 0.4 ML, which develops into a (7 × 1) structure by 0.8 ML. The film undergoes a structural change to fcc Ni(1 1 1) at 6 ML. The growth mode switches from layer-by-layer to Stranski-Krastanov between 4 ML and 6 ML. Annealing at around 850 K results in alloying of submonolayer films with the substrate, while for higher coverages the Ni agglomerates into nanowedge islands. Ni films grow pseudomorphically on W(1 0 0) up to a coverage of around 2 ML at 300 K, above which there is a structural change from bcc to hcp Ni with the epitaxial relationship . This is accompanied by the formation of orthogonal domains of uniaxial strain-relieving dislocations from the third layer of the film. For coverages up to 1 ML the growth proceeds by formation of two-dimensional islands, but shifts to three-dimensional growth by 2 ML with rectangular islands aligned along the 〈0 1 1〉 substrate directions. Annealing at around 550 K results in agglomeration of Ni into larger islands and increasing film roughness.     

Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(1 0 0) surface

Scanning tunnelling microscopy and current imaging tunnelling spectroscopy were used to study the topographic and electronic structure of a reduced TiO₂(1 0 0) surface. The STM results showed that the TiO₂(1 0 0) surface is capable to form (1 × 7) reconstruction which can transform to (1 × 3) reconstruction due to reoxidation of the surface. The CITS results showed that the (1 × 7) reconstruction is much more metallic in compared to the (1 × 3) reconstruction showing pronounced surface states at energy 1.3 eV and 0.8 eV below the Fermi level and at energy 1.0-1.2 eV above the Fermi level.     

Hydrogen desorption kinetics and band bending for 6H-SiC(0 0 0 1) surfaces

The desorption kinetics of hydrogen from polished 6H-SiC(0 0 0 1) surfaces exposed to various sources of hydrogen have been determined using temperature programmed desorption (TPD). For (3 × 3) 6H-SiC(0 0 0 1) surfaces prepared via annealing and cooling in SiH₄, desorption of 0.2 ± 0.05 monolayer of molecular hydrogen was observed to occur at ≈590 °C. This β₁ H₂ desorption peak exhibited second order kinetics with an activation energy of 2.4 ± 0.2 eV. For (3 × 3) 6H-SiC surfaces exposed to atomic hydrogen generated via either a hot rhenium filament or remote hydrogen plasma, low energy electron diffraction patterns showed an eventual conversion back to (1 × 1) symmetry. Spectra acquired using Auger electron and X-ray photoelectron spectroscopies revealed that the atomic hydrogen exposure removed the excess Si. Photoelectron spectroscopy results also showed a 0.5 eV increase in binding energy for the Si2p and C1s core levels after removal of the Si-Si bilayer that is indicative of a decrease in band bending at the SiC surface. TPD from the (3 × 3) 6H-SiC(0 0 0 1) surfaces exposed to atomic hydrogen showed substantially more molecular hydrogen desorption (1-2 ML) through the appearance of a new desorption peak (β_2,3) that started at ≈200 °C. The β_2,3 peak exhibited second order desorption kinetics and a much lower activation energy of 0.6 ± 0.2 eV. A third smaller hydrogen desorption state was also detected in the 650-850 °C range. This last feature could be resolved into two separate desorption peaks (α₁ and α₂) both of which exhibited second order kinetics with activation energies of 4.15 ± 0.15 and 4.3 ± 0.15 eV, respectively. Based on comparisons to hydrogen desorption from Si and diamond surfaces, the β and α desorption peaks were assigned to hydrogen desorption from Si and C sites, respectively.     

On the preparation and electronic properties of clean W(1 1 0) surfaces

We have studied the influence of oxygen pressure during the cyclic annealing used for the cleaning of W(1 1 0) surfaces. For this purpose the surface morphology and electronic properties are measured by means of scanning tunneling microscopy (STM) and spectroscopy (STS), respectively. It is found that the surfaces with impurity atom densities as low as 2 × 10⁻³ can be obtained by gradually reducing the oxygen pressure between subsequent annealing cycles down to about 2 × 10⁻⁸ mbar in the final cycle. Only on the clean surface a bias-dependent spatial modulation of the local density of states (LDOS) is observed at step edges and around impurity sites by STS. In addition, we find a pronounced peak in the occupied states. In combination with density functional theory calculations these features can be traced back to a dispersive p_z-d_xz-type surface resonance band and the lower band edge of a surface state, respectively.     

Deoxygenation of IrO2(1 1 0) surface: Core-level spectroscopy and density functional theory calculation

Deoxygenation of the IrO₂(1 1 0) surface is investigated at 403-493 K, using the core-level spectroscopy and density functional theory (DFT) calculation. The Ir-4f_7/2 signals of 1f-cus-Ir with and without on-top oxygen (O_top) emerge as surface features of the baked-out surface, whose positive and negative shifts in binding energy are in line with the DFT computation results. Progressively increasing the reduction temperature, the 1f-cus-Ir feature quickly disappears and the signal of 2f-cus-Ir emerges at 403 K. Meanwhile the feature of 1f-cus-Ir + O_top diminishes but persists when the Ir metal signal is evident. The intriguing coexistence of 1f-cus-Ir + O_top and Ir metal at 433-443 K is elucidated in the theoretical pathway study. DFT calculation reveals that O₂ desorption via pairing two neighboring O_top atoms is the rate-determining step of surface deoxygenation. Under the UHV conditions, O_top is replenished via migration of the surface oxygen species, including the threefold coordinated oxygen (O_3f) of a reduced surface. Hence the O_top atom is an active and long-lived surface species, which does not vanish until O_3f is consumed and surface Ir begins to cluster. Under the realistic pressure conditions, O_top can also be refreshed via the dissociative adsorption of gas-phase oxygen. In either pathway, O_top is a critical intermediary of IrO₂(1 1 0) oxidation catalysis.     

Ultra-thin film growth of titanium dioxide on W(1 0 0)

We have employed low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy to follow the epitaxial growth of thin films of TiO₂ on W(1 0 0). The films were grown both by metal vapour deposition of titanium onto the substrate in UHV with subsequent annealing in a low partial pressure of oxygen, and by metal vapour deposition in a low partial pressure of oxygen. LEED patterns showed the characteristic patterns of (1 1 0) oriented rutile. A systematic spot splitting was observed and attributed to a stepped surface. The calculated step height was found to be in good agreement with that expected for rutile TiO₂(1 1 0), 3.3 Å. Titanium core level shifts were used to identify oxidation states as a function of film thickness allowing the interpretation in terms of a slightly sub-stoichiometric interface layer in contact with the substrate. In combination with the LEED patterns, the film structure is therefore determined to be (1 1 0) oriented rutile with a comparable level of stoichiometry to UHV prepared bulk crystals. The ordered step structure indicates considerable structural complexity of the surface.     

The adsorption of and reaction of NO2 on Ag(1 1 1)-p(4 × 4)-O and formation of surface nitrate

The adsorption and reaction of nitrogen dioxide on the Ag(1 1 1)-p(4 × 4)-O surface has been investigated with RAIRS, TPRS and STM. At 300 K NO₂ initially reacts with the oxygen overlayer to form nitrate in p(3 × 3) and p(4 × 4) structures, which convert to a new p(3 × 3) at saturation coverage. Surface pitting during nitrate adsorption is suggestive of the incorporation of silver atoms into the NO₃ structure. With heating NO₃ decomposes into NO₂ and O at 396 K and 497 K, and oxygen desorbs at 578 K.     

Electronic structures of the suboxide films formed on TiC(1 0 0) and ZrC(1 0 0) surfaces: Density functional theory studies

Density functional theory (DFT) calculations have been performed to elucidate the electronic structures of the TiO-like film on TiC(1 0 0) and the ZrO-like film on ZrC(1 0 0), which are assumed to be monolayers of suboxide films with (1 × 1) periodicity with respect to the substrate (1 0 0) surfaces. It was revealed that the electronic structures of both films were characterized by the existence of a band around 6 eV and a band around the Fermi level. The former and latter bands were mostly composed of O 2p and metal d orbitals, respectively, indicating the substantial ionic nature of the film. The calculated DOS well reproduced the previously obtained photoelectron spectra. From the inspection of the optimized structures, it was found that the both suboxide films have rippled structures; the metal and oxygen atoms are displaced vertically downward and upward, respectively, maintaining the (1 × 1) structures.     

Core-level spectroscopy of the Pd/W(1 1 0) interface: Evidence of long-range Pd-island-W interactions at submonolayer Pd coverages

We have measured W 4f_7/2 core-level photoemission spectra from W(1 1 0) in the presence of Pd overlayers for coverages up to ∼1 pseudomorphic monolayer (ML). At coverages close to 0.05 ML a striking change in the W core-level spectrum is observed, which we interpret as indicating a long-range lateral effect of 2D Pd islands upon the W electronic structure in both the first and second W layers. As the coverage increases the long-range effect weakens and finally vanishes near 0.85 ML. Above this coverage the W spectra are typical for a W-based bimetallic interface, with the first-layer W atoms exhibiting a small interfacial core-level shift (−95 ± 5 meV) compared to the bulk atoms.     

The growth and structure of titanium dioxide films on a Re(1 0 −1 0) surface: Rutile(0 1 1)-(2 × 1)

Titanium dioxide films were grown on Re(1 0 −1 0) by Ti vapor deposition in oxygen at T = 830 K and studied by means of low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), low-energy ion scattering (LEIS) and X-ray diffraction (XRD). The Ti oxide stoichiometry was determined by XPS as Ti:O = 1:2, with the Ti oxidation state (4+). The TiO₂ growth was monitored by means of LEED as a function of film thickness. Extending the coverage from the submonolayer into the multilayer regime gives rise to a p(2 × 2) pattern, a (poorly ordered) (1 × 1), and, finally, a stable (2 × 2) structure, the latter being associated with a homogeneous TiO₂ phase. For normal electron incidence, the (2 × 2) LEED pattern exhibits systematically extinguished beams at (n ± 1/2, 0) positions, indicating a glide mirror plane. The pg(2 × 2) structure could be explained by both a rutile(0 1 1)-(2 × 1) reconstructed surface and a bulk truncated brookite(0 0 1) surface. Faceting phenomena, i.e. running LEED spots, observed with thin TiO₂ films point to the formation of a rutile(0 1 1)-(2 × 1) surface with two domains and {0 1 1}-(2 × 1) facets and rule out the brookite alternative. Confirmation of this assignment was obtained by an XRD analysis performed at the Berlin synchrotron facility BESSY.     

Hydrocarbon film growth by energetic CH3 molecule impact on SiC (0 0 1) surface

Classic molecular dynamics (MD) calculations were performed to investigate the deposition of thin hydrocarbon film. SiC (1 0 0) surfaces were bombarded with energetic CH₃ molecules at impact energies ranging from 50 to 150 eV. The simulated results show that the deposition yield of H atoms decreases with increasing incident energy, which is in good agreement with experiments. During the initial stages, with breaking Si-C bonds in SiC by CH₃ impacting, H atoms preferentially reacts with resulting Si to form Si-H bond. The C/H ratio in the grown films increases with increasing incident energy. In the grown films, CH species are dominant. For 50 eV, H-Csp3 bond is dominant. With increasing energy to 200 eV, the atomic density of H-Csp2 bond increases.     

Novel structural phases of Dy thin films on W(1 1 2)

Thin films of the rare-earth metal Dy were grown on W(1 1 2) at room temperature and 570 K. Then the resultant film morphologies were characterised by LEED and STM. A series of novel film morphologies, including c(4 × 6), c(5 × 12) and (5 × 8) structures, were found that are unique among the rare-earth metals. High thermal stability was found for the Dy films (up to 1650 K, close to the melting point at 1685 K) such that the Dy atoms preserved an ordered structure and the Dy volatility was less than would be expected from its vapour pressure. This is an indication of strong electronic interactions between the Dy atoms and the W(1 1 2) substrate.