Scanning tunneling microscopy and spectroscopy investigations of copper phthalocyanine adsorbed on Al2O3/Ni3Al(1 1 1)

Low temperature scanning tunneling microscopy (LT-STM) and scanning tunneling spectroscopy (STS) have been used to investigate adsorbed copper phthalocyanine (C₃₂H₁₆N₈Cu) molecules on an ordered ultrathin Al₂O₃ film on the Ni₃Al(1 1 1) surface as a function of coverage and annealing temperature. For sub-monolayer coverage and a deposition temperature of 140 K two different planar molecular adsorption configurations rotated by 30° with respect to each other were observed with submolecular resolution in the STM images. The template effect of the underlying oxide film on the CuPc orientation, however, is only weak and negligible at higher coverages. For θ_CuPc ≈ 1 ML, before completion of the first layer, the growth of a second layer was already observed. The measured spacing of 3.5 Å between first and second layer corresponds to the distance between the layers in the α-modification of crystalline CuPc. The molecules deposited at 140 K are thermally stable upon prolonged annealing to temperatures up to 250 K. By the use of STS the lowest unoccupied molecular orbital (LUMO) of the adsorbed copper phthalocyanine molecules has been identified at an energy of 1.2 eV above E_F. The lateral distribution of the electronic states of the CuPc has been analyzed and mapped by STS.     

Epitaxial C60 thin films on Bi(0 0 0 1)

We have used the Bi(0 0 0 1)/Si(1 1 1) template to grow highly ordered C₆₀ epitaxial thin films and analyzed them using scanning tunneling microscopy and low-energy electron microscopy. The in situ low-energy electron microscope investigations show that the initial nucleation of the C₆₀ islands on the surface takes place at surface defects, such as domain boundaries and multiple steps. The in-plane lattice parameters of this C₆₀ film turns out to be the same as that of the bulk fcc(1 1 1) C₆₀. The line-on-line epitaxial structure is realized in spite of a weak interaction between the C₆₀ molecules and Bi(0 0 0 1) surface, while scanning tunneling spectroscopy indicates that there is a negligible charge transfer between the molecules and the surface.     

Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(1 0 0) surface

Scanning tunnelling microscopy and current imaging tunnelling spectroscopy were used to study the topographic and electronic structure of a reduced TiO₂(1 0 0) surface. The STM results showed that the TiO₂(1 0 0) surface is capable to form (1 × 7) reconstruction which can transform to (1 × 3) reconstruction due to reoxidation of the surface. The CITS results showed that the (1 × 7) reconstruction is much more metallic in compared to the (1 × 3) reconstruction showing pronounced surface states at energy 1.3 eV and 0.8 eV below the Fermi level and at energy 1.0-1.2 eV above the Fermi level.     

The 2 × 1 reconstruction of the rutile TiO2(0 1 1) surface: A combined density functional theory, X-ray diffraction, and scanning tunneling microscopy study

An extensive search for possible structural models of the (2 × 1)-reconstructed rutile TiO₂(0 1 1) surface was carried out by means of density functional theory (DFT) calculations. A number of models were identified that have much lower surface energies than the previously-proposed ‘titanyl’ and ‘microfaceting’ models. These new structures were tested with surface X-ray diffraction (SXRD) and voltage-dependent STM measurements. The model that is (by far) energetically most stable shows also the best agreement with SXRD data. Calculated STM images agree with the experimental ones for appropriate tunneling conditions. In contrast to previously-proposed models, this structure is not of missing-row type; because of its similarity to the fully optimized brookite TiO₂(0 0 1) surface, we call it the ‘brookite (0 0 1)-like’ model. The new surface structure exhibits two different types of undercoordinated oxygen and titanium atoms, and is, in its stoichiometric form, predicted to be rather inert towards the adsorption of probe molecules.     

Initial stages of oxidation of Cu(1 1 1)

Several surface analysis techniques were combined to study the initial stages of oxidation of Cu(1 1 1) surfaces exposed to O₂ at low pressure (<5 × 10⁻⁶ mbar) and room temperature. Scanning tunneling microscopy (STM) results show that the reactivity is governed by the restructuring of the Cu(1 1 1) surface. On the terraces, oxygen dissociative adsorption leads to the formation of isolated O adatoms and clusters weakly bound to the surface. The O adatoms are located in the fcc threefold hollow sites of the unrestructured terraces. Friedel oscillations with an amplitude lower than 5 pm have been measured around the adatoms. At step edges, surface restructuring is initiated and leads to the nucleation and growth of a two-dimensional disordered layer of oxide precursor. The electronic structure of this oxide layer is characterised by a band gap measured by scanning tunneling spectroscopy to be ∼1.5 eV wide. The growth of the oxide islands progresses by consumption of the upper metal terraces to form triangular indents. The extraction of the Cu atoms at this interface generates a preferential orientation of the interface along the close-packed directions of the metal. A second growth front corresponds to the step edges of the oxide islands and progresses above the lower metal terraces. This is where the excess Cu atoms extracted at the first growth front are incorporated. STM shows that the growing disordered oxide layer consists of units of hexagonal structure with a first nearest neighbour distance characteristic of a relaxed Cu-Cu distance (∼0.3 nm), consistent with local Cu₂O(1 1 1)-like elements. Exposure at 300 °C is necessary to form an ordered two-dimensional layer of oxide precursor. It forms the so-called “29” superstructure assigned to a periodic distorted Cu₂O(1 1 1)-like structure.     

Surface structure of the missing-row reconstruction of VC0.8(1 1 0): a scanning tunneling microscopy analysis

Scanning tunnelling microscopy (STM) was used to study the (1 1 0) surface of a VC_0.8 sample. The surface shows a missing-row reconstruction, i.e., a grating structure with ridges and valleys oriented along the [0 0 1] direction and (1 0 0) and (0 1 0) facets. We did not find unreconstructed (1 1 0) terraces. The regular spacing of the ridges corresponds to a periodicity of (3 × 1) or (4 × 1), depending on preparation, presumably related to different concentrations of carbon vacancies. In the STM images, we can also observe apparent pairing of atoms in the rows, leading to the larger c(6 × 2) and (4 × 2) superstructure cells, which also show up in LEED. We attribute these additional periodicities to ordering of carbon vacancies in the surface rows.     

STM and LEED observations of a c(2 × 2) Ge overlayer on Pt(1 0 0)

We have investigated surface structures formed by deposition of 0.2 and 0.5-ML Ge on Pt(1 0 0) by using scanning tunneling microscopy (STM) and low electron energy diffraction (LEED). In addition, their temperature dependence and reactivity to CO have been studied. We observed the formation of disordered domains for Ge adatom coverages below 0.25-ML and complete c(2 × 2) structures at 0.25 to 0.5-ML Ge after annealing at 600-1200 K. Deposition of 0.2-ML Ge on a clean, hexagonally reconstructed (5 × 20)-Pt(1 0 0) substrate at 400 K lifts the reconstruction and ejects excess Pt atoms from the first layer into the adlayer. After annealing this surface to 600 K, the deposited Ge formed Ge adatoms on flat terraces and on round Pt adislands with incomplete c(2 × 2) structures, in addition to the presence of clean (1 × 1)-Pt(1 0 0) domains that were several nanometers across. Some domains of the unreconstructed (5 × 20)-Pt(1 0 0) surface still remained. After the deposition of 0.5-ML Ge and annealing at 600 K, disordered Ge domains disappeared and a c(2 × 2) Ge overlayer was produced all over the surface. Square terraces with square domains of the clean (1 × 1)-Pt(1 0 0) surface extended for nanometers. Annealing this surface to 900 K produced disordered Ge domains, and this was associated with an increase in Ge vacancies. When surfaces with 0.2-ML Ge were heated to 900 or 1200 K, or when a surface with 0.5-ML Ge was heated to 1200 K, larger domains of (5 × 20)-Pt(1 0 0) were formed with the agglomeration of disordered Ge adatoms. Pt clusters were observed in the Ge domains, and we consider these to be composed of those excess Pt atoms formed by lifting the reconstruction of the (5 × 20)-Pt(1 0 0) surface upon Ge agglomeration during cooling. A paper published elsewhere [T. Matsumoto, C. Ho, M. Batzill, B.E. Koel, Physical Review B, submitted for publication.] describes Na⁺-ion scattering spectroscopy (Na⁺-ISS) and X-ray photoelectron diffraction (XPD) experiments that distinguish between Ge present in an overlayer from incorporation into the top Pt layer to form a surface alloy for the surface structures reported here. Furthermore, these investigations revealed that disordered Ge adatoms observed herein might be associated with incomplete c(2 × 2) structures. Therefore, our observations of the formation of complete and incomplete domains of c(2 × 2) Ge adatoms indicate that interactions between Ge adatoms are repulsive at nearest neighbor distances and attractive at second-nearest neighbor distances. Regarding the reactivity of these surfaces, CO does not chemisorb on a Pt(1 0 0) surface with a c(2 × 2)-Ge overlayer and no measurable CO uptake was observed under UHV conditions at 220 K.     

Growth of Cr on Ir(1 1 1) studied by scanning tunneling microscopy

We have studied the room-temperature growth of Cr on Ir(1 1 1) by scanning tunneling microscopy. Even in the low-coverage regime, up to a total coverage of 2 monolayers (ML), Cr does not grow in the layer-by-layer mode. Instead, we observe islands with local coverages Θ between 1 ML and 5 ML. While the 1st layer growth is pseudomorphic, sporadic defect lines are observed in the 2nd layer. For Θ ? 3 ML periodic one-dimensional dislocation lines appear indicating the onset of strain relief. Scanning tunneling spectroscopy reveals that islands with Θ = 1 ML exist in two modifications. Though their tunneling spectra are qualitatively rather similar, direct comparison shows that the main peak is shifted by about 15 mV, resulting in peak positions of −0.255 V and −0.270 V. We interpret these two modifications as regular fcc Cr and Cr which exhibits a faulted hcp stacking on Ir(1 1 1), respectively. The assignment of fcc to areas directly attached to substrate steps together with the evolution of the ratio of the different ML-areas with coverage leads to the conclusion that hcp is the more favorable stacking.     

Morphology and defect structure of the CeO2(1 1 1) films grown on Ru(0 0 0 1) as studied by scanning tunneling microscopy

The morphology of ceria films grown on a Ru(0 0 0 1) substrate was studied by scanning tunneling microscopy in combination with low-energy electron diffraction and Auger electron spectroscopy. The preparation conditions were determined for the growth of nm-thick, well-ordered CeO₂(1 1 1) films covering the entire surface. The recipe has been adopted from the one suggested by Mullins et al. [D.R. Mullins, P.V. Radulovic, S.H. Overbury, Surf. Sci. 429 (1999) 186] and modified in that significantly higher oxidation temperatures are required to form atomically flat terraces, up to 500 Å in width, with a low density of the point defects assigned to oxygen vacancies. The terraces often consist of several rotational domains. A circular shape of terraces suggest a large variety of undercoordinated sites at the step edges which preferentially nucleate gold particles deposited onto these films. The results show that reactivity studies over ceria and metal/ceria surfaces should be complemented with STM studies, which provide direct information on the film morphology and surface defects, which are usually considered as active sites for catalysis over ceria.     

A scanning tunneling microscopy study of PH3 adsorption on Si(1 1 1)-7 × 7 surfaces, P-segregation and thermal desorption

PH₃ adsorption on Si(1 1 1)-7 × 7 was studied after various exposures between 0.3 and 60 L at room temperature by means of scanning tunneling microscopy (STM). PH₃-, PH₂-, H-reacted, and unreacted adatoms can be identified by analyzing empty-state STM images at different sample biases. PH_x-reacted rest-atoms can be observed in empty-state STM images if neighboring adatoms are hydrogen terminated. Most of the PH₃ adsorbs dissociatively on the surface, generating H- and PH₂-adsorbed rest-atom and adatom sites. Dangling-bonds at rest-atom sites are more reactive than adatom sites and the faulted half of the 7 × 7 unit cell is more reactive than the unfaulted half. Center adatoms are overwhelmingly preferred over corner adatoms for PH₂ adsorption. The saturation P coverage is ∼0.18 ML. Annealing of PH₃-reacted 7 × 7 surfaces at 900 K generates disordered, partially P-covered surfaces, but dosing PH₃ at 900 K forms P/Si(1 1 1)- surfaces. Si deposition at 510 K leaves disordered clusters on the surface, which cannot be reordered by annealing up to 800 K. However, annealing above 900 K recreates P/Si(1 1 1)- surfaces. Surface morphologies formed by sequential rapid thermal annealing are also presented.     

Growth of Co nanoparticles on a nanostructured θ-Al2O3 film on CoAl(1 0 0)

We have investigated the growth of Co nanoparticles on θ-Al₂O₃/CoAl(1 0 0) by means of Auger electron spectroscopy (AES), high-resolution electron energy loss spectroscopy (EELS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). Due to Volmer-Weber growth, Co forms particles with a mean diameter of approximately 2.5 nm and height of 0.8 nm. Even on the entirely covered oxide, there is no Ostwald ripening and Co particles stay structurally isolated. The nanoparticles exhibit a small size distribution and tend to form chains, as predetermined by the streak structure of the oxide template. For sufficient high coverages Co-core-CoO-shell nanoparticles may be evidenced, which is explained as a result of surfactant oxygen. The nanostructured particles may open the door to numerous applications, such as in catalysis and magnetoelectronic applications, where large areas of ordered nanodots are desired.     

Molecular dynamics study on surface structure and surface energy of rutile TiO2 (1 1 0)

The formula for surface energy was modified in accordance with the slab model of molecular dynamics (MDs) simulations, and MD simulations were performed to investigate the relaxed structure and surface energy of perfect and pit rutile TiO₂(1 1 0). Simulation results indicate that the slab with a surface more than four layers away from the fixed layer expresses well the surface characteristics of rutile TiO₂ (1 1 0) surface; and the surface energy of perfect rutile TiO₂ (1 1 0) surface converges to 1.801±0.001 J m⁻². The study on perfect and pit slab models proves the effectiveness of the modified formula for surface energy. Moreover, the surface energy of pit surface is higher than that of perfect surface and exhibits an upper-concave parabolic increase and a step-like increase with increasing the number of units deleted along [0 0 1] and [1 1 0], respectively. Therefore, in order to obtain a higher surface energy, the direction along which atoms are cut out should be chosen in accordance with the pit sizes: [] direction for a small pit size and [0 0 1] direction for a big pit size; or alternatively the odd units of atoms along [1 1 0] direction are removed.     

Co on thin Al2O3 films grown on Ni3Al(1 0 0)

The growth of Co on thin Al₂O₃ layers on Ni₃Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al₂O₃ layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 Å of Co, a complete screening of the dipoles of the Al₂O₃ layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place.     

Structure, defects, and impurities at the rutile TiO2(0 1 1)-(2 × 1) surface: A scanning tunneling microscopy study

The titanium dioxide rutile (0 1 1) (equivalent to (1 0 1)) surface reconstructs to a stable (2 × 1) structure upon sputtering and annealing in ultrahigh vacuum. A previously proposed model (T.J. Beck, A. Klust, M. Batzill, U. Diebold, C. Di Valentin, A. Selloni, Phys. Rev. Lett. 93 (2004) 036104/1) containing onefold coordinated oxygen atoms (titanyl groups, TiO) is supported by Scanning Tunneling Microscopy (STM) measurements. These TiO sites are imaged bright in empty-states STM. A few percent of these terminal oxygen atoms are missing at vacuum-annealed surfaces of bulk-reduced samples. These O vacancies are imaged as dark spots. Their number density depends on the reduction state of the bulk. Double vacancies are the most commonly observed defect configuration; single vacancies and vacancies involving several O atoms are present as well. Formation of oxygen vacancies can be suppressed by annealing a sputtered surface first in vacuum and then in oxygen; annealing a sputtered surface in oxygen results in surface restructuring and a (3 × 1) phase. Anti-phase domain boundaries in the (2 × 1) structure are active adsorption sites. Segregation of calcium impurities from the bulk results in an ordered overlayer that exhibits domains with a centered (2 × 1) periodicity in STM.     

Atomic structure of Cu2O(1 1 1)

Low-energy electron diffraction and scanning tunneling microscopy have been used to probe the surface atomic structure of Cu₂O(1 1 1) after various sample preparations. Annealing in oxygen gives a stoichiometric (1 × 1) oxygen terminated surface and further annealing in ultra-high vacuum results in a clear reconstruction and surface faceting. Tunneling from filled states in the reconstructed surface reveals a hexagonal pattern of large protrusions, which show an internal structure. The reconstruction is believed to be due to one-third of a monolayer of ordered oxygen vacancies. At areas on the surface where the large features are missing, another smaller type of protrusions is visible, which is associated with the ideal (1 × 1) surface. The relative position of the two types of features gives two possible models of the (1 1 1) surface. In the first model, the (1 × 1) surface is the ideal bulk terminated surface and coordinatively unsaturated oxygen ions are missing in the reconstructed surface. The second model agrees with the first model with the exception that coordinatively unsaturated copper ions in the outmost copper layer are missing in both the (1 × 1) and the reconstructed surface. The latter model is supported by previous surface free energy calculations. Since the undercoordinated copper ions have been suggested to be the catalytic active sites of Cu₂O(1 1 1), the presence or absence of these cations could be of great importance for the fundamental understanding of the surface reactivity of Cu₂O and of copper-based catalysts.     

Low temperature InSb(0 0 1) surface structure studied by scanning tunneling microscopy

InSb(0 0 1) surface prepared by ion sputtering and thermal annealing has been studied in the temperature range from 77 K up to 300 K using scanning tunneling microscopy (STM). At 300 K the surface is c(8 × 2) reconstructed as indicated by low energy electron diffraction and STM images, and its structure appears to be consistent with the “ζ-model” recently proposed for this surface. Upon lowering of the temperature below 180 K a new phase appears on the surface. This phase is characterized by the surface structure period doubling along [1 1 0], lowering the surface symmetry from c2mm to p2, and appearance of structural domains. Possible origins of the new phase are discussed.     

The CuGaSe2(0 0 1) surface: A (4 × 1) reconstruction

We report on the formation of a stable (4 × 1) reconstruction of the chalcopyrite CuGaSe₂(0 0 1) surface. Using Ar⁺ ion-bombardment and annealing of epitaxial CuGaSe₂ films grown on GaAs(0 0 1) substrates it was possible to obtain flat, well-ordered surfaces showing a clear (4 × 1) reconstruction. The cleanliness and structure were analyzed in situ by AES and LEED. AES data suggest a slight Se-enrichment and Cu-depletion upon surface preparation. Our results demonstrate that (0 0 1) surfaces of the Cu-III-VI₂(0 0 1) material can show stable, unfacetted surfaces.     

Scanning tunneling microscopy and spectroscopy of Mo clusters grown on TiO2(1 1 0)

Molybdenum was deposited in two steps (3 eq. ML and 1 eq. ML) on the light blue rutile TiO₂(1 1 0) (1 × 1) surface at room temperature, each Mo deposition cycle being followed by an annealing up to 950-1000 K. This procedure was found to lead to formation of separated clusters having a size in very wide range (1-20 nm). Scanning tunneling microscopy showed a dependence of the cluster morphology as a function of the size. The scanning tunneling spectra of Mo clusters was studied as a function of cluster dimensions and discussed in comparison with photoelectron spectroscopy results previously obtained for homogeneous Mo films. The dI/dV curves do not display the valence band structure of deposited material, which could be explained by the Schottky barrier formation.     

Temperature- and coverage-dependent evolution of the Au/Pd(1 1 0) surface structure

The morphology and the atomic scale structure of thin gold films (up to 2.5 ML) on Pd(1 1 0) were studied by means of scanning tunneling microscopy and surface X-ray diffraction. At room temperature the films exhibit a multilayer growth mode accompanied by the formation of highly anisotropic islands. Annealing above 500 K significantly increases the smoothness of the gold films, which are in registry with the substrate. Above a critical threshold of two monolayers a (1 × 2) missing-row reconstructed film is found. This reconstructed surface is well ordered after annealing at temperatures above 580 K. The specific gold film morphology is envisaged as a way to relax the strain caused by the mismatch between gold and palladium.     

Ultra-thin Si overlayers on the TiO2 (1 1 0)-(1 × 2) surface: Growth mode and electronic properties

The growth of thin subnanometric silicon films on TiO₂ (1 1 0)-(1 × 2) reconstructed surfaces at room temperature (RT) has been studied in situ by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), Auger electron and electron-energy-loss spectroscopies (AES and ELS), quantitative low energy electron diffraction (LEED-IV), and scanning tunneling microscopy (STM). For Si coverage up to one monolayer, a heterogeneous layer is formed. Its composition consists of a mixture of different suboxides SiO_x (1 < x ? 2) on top of a further reduced TiO₂ surface. Upon Si coverage, the characteristic (1 × 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Annealing the SiO_x overlayer results in the formation of suboxides with different stoichiometry. The LEED pattern recovers the characteristic TiO₂ (1 1 0)-(1 × 2) diagram. LEED I-V curves from both, substrate and overlayer, indicate the formation of nanometric sized SiO_x clusters.