Novel green-emitting Na2CaPO4F:Eu phosphors for near-ultraviolet white light-emitting diodes

In this study, green-emitting Na₂CaPO₄F:Eu²⁺ phosphors were synthesized by solid-state reactions. The excitation spectra of the phosphors showed a broad hump between 250 and 450 nm; the spectra match well with the near-ultraviolet (NUV) emission spectra of light-emitting diodes (LEDs). The emission spectrum showed an intense broad emission band centered at 506 nm. White LEDs were fabricated by integrating a 390 nm NUV chip comprising blue-emitting BaMgAl₁₀O₁₇:Eu²⁺, green-emitting Na₂CaPO₄F:0.02 Eu²⁺, and red-emitting CaAlSiN₃:Eu²⁺ phosphors into a single package; the white LEDs exhibited white light with a correlated color temperature of 5540 K, a color-rendering index of 90.75, and color coordinates (0.332, 0.365) close to those of ideal white light.     

Low temperature quenching and high efficiency Tm, La or Tb co-doped CaSc2O4:Ce phosphors for light-emitting diodes

Low temperature quenching and high efficiency CaSc₂O₄:Ce³⁺ (CSO:Ce³⁺) phosphors co-doped with Tm³⁺, La³⁺ and Tb³⁺ ions were prepared by a solid state method and the phase-forming, morphology, luminescence and application properties of these phosphors were investigated. The results showed that co-doping of Tm³⁺, La³⁺ and Tb³⁺ ions can improve the luminescence properties and decrease temperature quenching of CSO:Ce³⁺ phosphor remarkably. High efficiency green-light-emitting diodes were fabricated with the prepared phosphors and InGaN blue-emitting (∼460 nm) chips. The good performances of the green-light-emitting LEDs made from co-doped CSO:Ce³⁺ phosphors confirm the luminescence enhancement and indicate that Tm³⁺, La³⁺ and Tb³⁺ co-doped CSO:Ce³⁺ phosphors are suitable candidates for the fabrication of high efficiency white LEDs.     

Eu-activated Ba2Mg(BO3)2 yellow-emitting phosphors for near ultraviolet-based light-emitting diodes

A series of Eu²⁺-activated Ba₂Mg(BO₃)₂ yellow phosphors were prepared by a high temperature solid-state reaction. The phosphor emits intense yellow light under near ultraviolet excitation. Large Stokes shift can be attributed to the asymmetric nature of the Eu site and the lack of rigidity in the host. The concentration self-quenching mechanism of Ba₂Mg(BO₃)₂:Eu²⁺ is d-d interaction and the critical transfer distance is calculated to be about 12.29 Å. Prototype light-emitting diodes were fabricated by coating the Ba₂Mg(BO₃)₂:0.07Eu²⁺ phosphor onto ∼370 nm-emitting InGaN chips. The LEDs exhibit intense yellow-emitting under a forward bias of 20 mA. The results indicate that Eu²⁺-activated Ba₂Mg(BO₃)₂ is a candidate as a yellow component for fabrication of near-UV white light-emitting diodes.     

Novel red perovskite phosphor Ca2AlNbO6:Eu for white light-emitting diode application

Eu³⁺-doped perovskite phosphors of Ca₂AlNbO₆ were synthesized from a solid state reaction. A small amount of the Li₂CO₃ flux was found to greatly shorten calcination time and reduce reaction temperature. The structural and optical properties of the samples were systematically investigated. The excitation spectra of Ca₂AlNbO₆:Eu³⁺ reveal two excitation bands at 398 (⁷F₀→⁵L₆) and 466 nm (⁷F₀→⁵D₂), which match well with the two popular emissions from near-UV and blue LED chips. Under blue light excitation, the red emission of Ca₂AlNbO₆:0.05Eu³⁺ is twice more intense than that of (Y_0.95Eu_0.05)₂O₃. The chromaticity coordinates of (Ca_0.95Eu_0.05)₂AlNbO₆ (x=0.654, y=0.346) are close to the standard values (x=0.670, y=0.330) of National Television Standard Committee (NTSC). The optical properties suggest that Ca₂AlNbO₆:Eu³⁺ is an efficient red-emitting phosphor for light-emitting diode applications.     

A white light emitting phosphor Sr1.5Ca0.5SiO4:Eu, Tb, Eu for LED-based near-UV chip: Preparation, characterization and luminescent mechanism

In this work, we report preparation, characterization and luminescent mechanism of a phosphor Sr_1.5Ca_0.5SiO₄:Eu³⁺,Tb³⁺,Eu²⁺ (SCS:ETE) for white-light emitting diode (W-LED)-based near-UV chip. Co-doped rare earth cations Eu³⁺, Tb³⁺ and Eu²⁺ as aggregated luminescent centers within the orthosilicate host in a controlled manner resulted in the white-light phosphors with tunable emission properties. Under the excitation of near-UV light (394 nm), the emission spectra of these phosphors exhibited three emission bands: one broad band in the blue area, a second band with sharp lines peaked in green (about 548 nm) and the third band in the orange-red region (588-720 nm). These bands originated from Eu²⁺ 5d→4f, Tb³⁺⁵D₄→⁷F_J and Eu³⁺⁵D₀→⁷F_J transitions, respectively, with comparable intensities, which in return resulted in white light emission. With anincrease of Tb³⁺ content, both broad Eu²⁺ emission and sharp Eu³⁺ emission increase. The former may be understood by the reduction mechanism due to the charge transfer process from Eu³⁺ to Tb³⁺, whereas the latter is attributed to the energy transfer process from Eu²⁺ to Tb³⁺. Tunable white-light emission resulted from the system of SCS:ETE as a result of the competition between these two processes when the Tb³⁺ concentration varies. It was found that the nominal composition Sr_1.5Ca_0.5SiO₄:1.0%Eu³⁺, 0.07%Tb³⁺ is the optimal composition for single-phased white-light phosphor. The CIE chromaticity calculation demonstrated its potential as white LED-based near-UV chip.     

Ionic liquid-assisted hydrothermal synthesis of dendrite-like NaY(MoO4)2:Tb phosphor

Micro-sized NaY(MoO₄)₂:Tb³⁺ phosphors with dendritic morphology was synthesized by a ionic liquid-assisted hydrothermal process. X-ray diffraction (XRD) indicated that the as-prepared product is pure tetragonal phase of NaY(MoO₄)₂. Field emission scanning electron microscopy (FE-SEM) images showed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors have dendritic morphology. The photoluminescent (PL) spectra displayed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors show a stronger green emission with main emission wavelength 545 nm corresponding to the ⁵D₄→⁷F₅ transition of Tb³⁺ ion, and the optimal Tb³⁺ doping concentration for obtaining maximum emission intensity was confirmed to be 10 mol%. Based on Van Uitert's and Dexter's models the electric dipole–dipole (D–D) interaction was confirmed to be responsible for the concentration quenching of ⁵D₄ fluorescence of Tb³⁺ in the NaY(MoO₄)₂:Tb³⁺ phosphors. The intrinsic radiative transition lifetime of ⁵D₄ level is found to be 0.703 ms.     

Luminescent characteristics of LiCaBo3:M (M=Eu, Sm, Tb, Ce, Dy) phosphor for white LED

LiCaBO₃:M (M=Eu³⁺, Sm³⁺, Tb³⁺, Ce³⁺, Dy³⁺) phosphors were synthesized by a normal solid-state reaction using CaCO₃, H₃BO₃, Li₂CO₃, Na₂CO₃, K₂CO₃, Eu₂O₃, Sm₂O₃, Tb₄O₇, CeO₂ and Dy₂O₃ as starting materials. The emission and excitation spectra were measured by a SHIMADZU RF-540 UV spectrophotometer. And the results show that these phosphors can be excited effectively by near-ultraviolet light-emitting diodes (UVLED), and emit red, green and blue light. Consequently, these phosphors are promising phosphors for white light-emitting diodes (LEDs). Under the condition of doping charge compensation Li⁺, Na⁺ and K⁺, the luminescence intensities of these phosphors were increased.     

Double emitting phosphor NaSr4(BO3)3:Ce, Tb for near-UV light-emitting diodes

Blue and green double emitting phosphor, Ce³⁺ and Tb³⁺ co-doped NaSr₄(BO₃)₃, was synthesized in a weak reducing atmosphere by a conventional high temperature solid-state reaction technique. For comparison, Ce³⁺ or Tb³⁺ singly doped NaSr₄(BO₃)₃ was also prepared. The emission and excitation spectra of all samples have been investigated. NaSr₄(BO₃)₃:Tb³⁺ excitation includes a strong absorption at about 240 nm and some weak sharp lines in near-ultraviolet (n-UV) spectral region. The excitation of Ce³⁺ and Tb³⁺ co-doped NaSr₄(BO₃)₃ shows a strong broad band absorption in the n-UV region from the contribution of Ce³⁺, which makes it suitable for excitation by a n-UV LED chip. The emission of NaSr₄(BO₃)₃:Ce³⁺,Tb³⁺ consists of a blue emission band from Ce³⁺ and a green emission from Tb³⁺ under the excitation of n-UV light. Energy transfer between Ce³⁺ and Tb³⁺ is also discussed, and the relative intensity of blue emission and green emission could be tuned by adjusting the concentration of Ce³⁺ and Tb³⁺. The phosphor NaSr₄(BO₃)₃:Ce³⁺,Tb³⁺ could be considered as a double emission phosphor for n-UV excited white light-emitting diodes.     

Preparation of CaWO4:Ln@SiO2 (Ln=Tb, Dy and Ho) nanoparticles by a combustion reaction and their optical properties

The CaWO₄:Ln³⁺@SiO₂ (Ln=Tb, Dy and Ho) nanoparticles were synthesized via a combustion process at 800 °C, using citric acid as chelating agent and fuel, ammonium nitrate as fuel, boric acid as flux material and silica as supports. The persistent phosphor nanoparticles were characterized by X-ray diffraction (XRD), reflectance UV-vis and fluorescence spectroscopy (PL) and transmission electron microscopy (TEM) techniques. XRD patterns indicated that crystalline calcium tungstate with scheelite structure was produced. The reflectance UV-vis spectra showed the broad absorption band of groups and the PL spectra showed the wide excitation band, broad emission band of and characteristic emissions of Ln³⁺ ions. The average particle sizes were determined by TEM, which are about 50 nm.     

Mn, Cr-co-doped MgAl2O4 phosphors for white LEDs

The Mn-, Cr-doped and Mn, Cr-co-doped MgAl₂O₄ powders have been synthesized via a gel-solid reaction method. Energy transfer from Mn²⁺ to Cr³⁺ has been observed for the first time in the co-doped MgAl₂O₄ phosphors. When excited with blue light with a wavelength of 450 nm at room temperature, both green emission from Mn²⁺ around 520 nm and red emission from Cr³⁺ around 675and 693 nm were generated. Moreover, the color of the emission can be modified by controlling the doping concentrations of Mn²⁺ and Cr³⁺. Therefore, MgAl₂O₄: Mn²⁺, Cr³⁺ could be used as a single-phased phosphor for white LED with a blue LED chip. The energy transfer in terms of Mn²⁺ to Cr³⁺ is determined by means of radiation and reabsorption.     

PL and CL degradation and characteristics of SrAl2O4: Eu,Dy phosphors

Strontium aluminate phosphors are ideal for luminescent infrastructure materials. Their brightness and persistent glow time are much higher than previously used sulphide phosphors. Strontium aluminates prepared by the sol–gel and combustion methods are compared with commercially available strontium aluminate. High luminescent efficient SrAl₂O₄:Eu²⁺,Dy³⁺ pulsed laser deposited (PLD) thin films were also produced using the commercially available powder. Photoluminescence (PL) degradation studies showed that the phosphor intensity decreased about 20% over a period of 2 weeks under ultraviolet (UV) irradiation. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) showed that cathodoluminescence (CL) degradation is due to the formation of SrO due to electron stimulated surface reactions. The light output mechanism of the phosphor is also discussed in more detail.     

Magnetic properties of CoFe1.9RE0.1O4 nanoparticles (RE=La,Ce, Nd,Sm, Eu,Gd, Tb,Ho) prepared in polyol

Highly crystalline CoFe_1.9RE_0.1O₄ ferrite nanoparticles, where RE=La, Ce, Nd, Sm, Eu, Gd, Tb, and Ho, have been synthesized by forced hydrolysis in polyol. X-ray diffraction (XRD), transmission electron microscopy (TEM), electron energy-loss spectroscopy (EELS), ⁵⁷Fe Mössbauer spectrometry, Co K-edge X-ray absorption spectroscopy and magnetic measurements using a SQUID magnetometer were employed to investigate the effect of the substitution RE³⁺ ions for Fe³⁺ ones on the structure, the microstructure, the chemical homogeneity, and the magnetic properties of the cobalt ferrite system. All the produced particles are superparamagnetic at room temperature. Nevertheless, the substitution causes reduction of the blocking temperature which is mainly ascribed to partial cation exchange among the spinel-like sublattices of CoFe₂O₄ induced by the insertion of the relatively large RE³⁺ ions. The low-temperature saturation magnetization and coercivity appear to be greatly affected by the nature of RE³⁺ ions—maxima values were found for Gd³⁺ and Eu³⁺, respectively.     

Luminescent properties of (Y,Gd)BO3:Bi,RE (RE=Eu, Tb) phosphor under VUV/UV excitation

Bi³⁺- and RE³⁺-co-doped (Y,Gd)BO₃ phosphors were prepared and their luminescent properties under vacuum ultraviolet (VUV)/UV excitation were investigated. Strong red emission for (Y,Gd)BO₃:Bi³⁺,Eu³⁺ and strong green emission for (Y,Gd)BO₃:Bi³⁺,Tb³⁺ are observed under VUV excitation from 147 to 200 nm with a much broader excitation region than that of single Eu³⁺-doped or Tb³⁺-doped (Y,Gd)BO₃ phosphor. Strong emissions are also observed under UV excitation around 265 nm where as nearly no luminescence is observed for single Eu³⁺-doped or Tb³⁺-doped (Y,Gd)BO₃. The luminescence enhancement of Bi³⁺- and RE³⁺-co-doped (Y,Gd)BO₃ phosphors is due to energy transfer from Bi³⁺ ion to Eu³⁺ or Tb³⁺ ion not only in the VUV region but also in the UV region. Besides, host sensitization competition between Bi³⁺ and Eu³⁺ or Tb³⁺ is also observed. The investigated phosphors may be preferable for devices with a VUV light 147-200 nm as an excitation source such as PDP or mercury-free fluorescent lamp.     

NaEu0.96Sm0.04(MoO4)2 as a promising red-emitting phosphor for LED solid-state lighting prepared by the Pechini process

NaEu_0.96Sm_0.04(MoO₄)₂ was prepared by the Pechini method (P phosphor) and as a comparison, also by solid-state reaction technique (S phosphor). The photo-luminescent properties, the morphology and the grain size were investigated. The phosphors show broadened excitation band around 400 nm, high intensity of Eu³⁺⁵D₀→⁷F₂ emission upon excitation around 400 nm, and appropriate CIE chromaticity coordinates. Intensive red light-emitting diodes (LEDs) were fabricated by combining the phosphor and a 400 nm InGaN chip for the first time, which confirm that the phosphor is a good candidate for near UV LED. The luminescent intensity of P phosphor prepared at 700 °C is near that of S phosphor prepared at 800 °C. In addition, P phosphor shows advantages of lower calcining temperature, shorter heating time, and smaller grain size. Considering all these factors, the suitable method for preparing the promising near UV LED phosphor NaEu_0.96Sm_0.04(MoO₄)₂ is recommended to be the Pechini process at 700 °C.     

White light-emitting Mg0.1Sr1.9SiO4:Eu phosphors

Divalent europium-activated strontium orthosilicate Sr₂SiO₄:Eu²⁺ and Mg_0.1Sr_1.9SiO₄:Eu²⁺ phosphors were synthesized through the solid-state reaction technique. Their luminescent properties under ultraviolet excitation were investigated. The X-ray diffraction (XRD) results show that these phosphors are of α′-Sr₂SiO₄ phase with a trace of β-Sr₂SiO₄. Doping of Eu²⁺ ion into the crystal lattice results in the lattice constant being expended, while Mg²⁺ makes the lattice constant shrinking. A solid solution with the same crystal structure is formed when Eu²⁺ or Mg²⁺ substitutes part of Sr²⁺ ions and occupies the same lattice sites. The Sr₂SiO₄:Eu²⁺ phosphors show two emission spectra peaked at 535 and 473 nm originated from the 5d-4f transition of Eu²⁺ ion doped in two different Sr²⁺ sites in the host lattice. By substitution of 0.1 mol of Sr²⁺ with Mg²⁺, these two emission bands are tuned to be in the blue and yellow region (459 and 564 nm for Mg_0.1Sr_1.88SiO₄:Eu_0.02), respectively. The tuning effect is discussed. With a combination of the blue and yellow emission bands the phosphors show white color, indicating that these phosphors may become promising phosphor candidates for white light-emitting diodes (LEDs).     

Low thermal quenching and high-efficiency Ce, Tb-co-doped Ca3Sc2Si3O12 green phosphor for white light-emitting diodes

Low thermal quenching and high-efficiency Ca₃Sc₂Si₃O₁₂:Ce³⁺ (CSSO:Ce³⁺) phosphors with co-doping Tb³⁺ ion were prepared by a solid state method and the properties of these phosphors were investigated. The results showed that co-doping of Tb³⁺ not only enhances the photoluminescence remarkably and decreases the thermal quenching of the phosphor, but also heightens the performances of the LEDs fabricated with the phosphor. A high-efficiency and low color temperature white LED was fabricated with the prepared CSSO:1%Ce³⁺, 0.5%Tb³⁺ and a red phosphor, indicating that CSSO:1%Ce³⁺,0.5%Tb³⁺ phosphor is a suitable green phosphor for the fabrication of high-efficiency white LEDs.     

Combustion synthesis and luminescence properties of NaY1−xEux(WO4)2 phosphors

The red phosphors NaY_1−xEu_x(WO₄)₂ with different concentrations of Eu³⁺ were synthesized via the combustion synthesis method. As a comparison, NaEu(WO₄)₂ was prepared by the solid-state reaction method. The phase composition and optical properties of as-synthesized samples were studied by X-ray powder diffraction and photoluminescence spectra. The results show that the red light emission intensity of the combustion synthesized samples under 394 nm excitation increases with increase in Eu³⁺ concentrations and calcination temperatures. Without Y ions doping, the emission spectra intensity of the NaEu(WO₄)₂ phosphor prepared by the combustion method fired at 900 °C is higher than that prepared by the solid-state reaction at 1100 °C. NaEu(WO₄)₂ phosphor synthesized by the combustion method at 1100 °C exhibits the strongest red emission under 394 nm excitation and appropriate CIE chromaticity coordinates (x=0.64, y=0.33) close to the NTSC standard value. Thus, its excellent luminescence properties make it a promising phosphor for near UV InGaN chip-based red-emitting LED application.     

Luminescence properties of Y2WO6:Eu incorporated with Mo or Bi ions as red phosphors for light-emitting diode applications

In this study, the red phosphors, Y₂W_1−xMo_xO₆:Eu³⁺ and Y₂WO₆:Eu³⁺,Bi³⁺, have been investigated for light-emitting diode (LED) applications. In Y₂WO₆:Eu³⁺, the excitation band edge shifts to longer wavelength with the incorporation of Mo⁶⁺ or Bi³⁺ ions. The emission spectra exhibit ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ ion at 588, 593, and 610 nm, respectively. Moreover, the bluish-green luminescence of the WO₆⁶⁻ at about 460 nm is observed to decrease with the incorporation of Mo⁶⁺, which results in pure red color. Thus, this study shows that the red phosphor, Y₂WO₆:Eu³⁺, incorporated with Mo⁶⁺ or Bi³⁺ ions is advantageous for LEDs applications.     

White light-emitting diodes using blue and yellow-orange-emitting phosphors

A blue-emitting phosphor, BaMgAl₁₀O₁₇:Eu²⁺ (BAM) and a yellow-orange phosphor, Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ were prepared by the solid-state reaction. Excitation and emission spectra results showed that BAM and Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ can be efficiently excited by near-ultraviolet (n-UV)-visible light from 250 to 440 nm. The effects of the doped-Eu²⁺ concentration in BAM and Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ on the photoluminescence were investigated in detail. White light-emitting diodes (LED) was obtained by combining n-UV LED chip (GaN-based 380 nm emitting) with BaMgAl₁₀O₁₇:0.09Eu²⁺ and 0.1Ba²⁺-codoped Sr₃SiO₅: 0.2Eu²⁺ phosphors with the characteristic of color-rendering index of 86, CIE chromaticity coordinates (x,y) of (0.3216,0.3096), and color temperature T_c of 5700 K. As the current increases, the relative intensity simultaneously increases. The CIE chromaticity coordinates (x,y) of the white LED tends to decrease. The correlated color temperature T_c increases from 4100 to 7500 K and the color-rendering index R_a increases from 82 to 87 simultaneously.     

Photoluminescence of SrGa2S4:Sn,Re(=Ce, Gd) phosphors

The photoluminescence (PL) spectra, PL excitation spectra, color coordinates, and X-ray diffraction spectra are reported for SrGa₂S₄:Sn,Re(=Ce and Gd, respectively) phosphors. By mixing SrGa₂S₄:Sn,Ce phosphors with different Ce³⁺ concentrations, white emissions can be obtained under the excitation of a 340-nm UV LED. Emissions in the green to yellow color range can be obtained from SrGa₂S₄:Sn,Gd phosphors. The rare earth ions enhance the green emission band, which peaks at 534 nm, instead of the yellow one. The origin of this enhancement is discussed. The resonant energy transfer rates are estimated in the cases from Ce³⁺ to the green and yellow centers of Sn²⁺ and between the yellow centers and the green centers.