Synthesis, structure and luminescence properties of Y(V,P)O4:Eu,Bi phosphors

YVO₄:Eu³⁺-based red-emitting phosphors with the compositions of Y_0.95−xVO₄:0.05Eu³⁺,xBi³⁺ (x=0.01, 0.03, 0.05, 0.07 and 0.09) and Y_0.90(V_1−zP_z)O₄:0.05Eu³⁺,0.05Bi³⁺ (z=0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1.0) were synthesized by the high temperature solid-state method. The as-prepared phosphors have the similar tetragonal phase structure and their morphologies varied with the relative content ratio of V to P. The photoluminescence spectra for the as-synthesized phosphors show that a dominant red emission line at around 619 nm, which is due to the Eu³⁺ electric dipole transition of ⁵D₀-⁷F₂, is observed under different excitation wavelengths (254 and 365 nm). Further, the emission intensities of ⁵D₀-⁷F₂ transition upon 365 nm excitation increase sharply owing to the Bi³⁺ doping. Energy transfer process, luminescent lifetime and quantum efficiency for the selected Y_0.90(V_1−yP_y)O₄:0.05Eu³⁺,xBi³⁺phosphors were also studied in detail.     

Controlled synthesis and relationship between luminescent properties and shape/crystal structure of Zn2SiO4:MN phosphor

Mn-doped Zn₂SiO₄ phosphors with different morphology and crystal structure, which show different luminescence and photoluminescence intensity, were synthesized via a low-temperature hydrothermal route without further calcining treatment. As-synthesized zinc silicate nanostructures show green or yellow luminescence depending on their different crystal structure obtained under different preparation conditions. The yellow peak occurring at 575 nm comes from the β-phase zinc silicate, while the green peak centering at 525 nm results from the usual α-phase zinc silicate. From photoluminescence spectra, it is found that Zn₂SiO₄ nanorods have higher photoluminescence intensity than Zn₂SiO₄ nanoparticles. It can be ascribed to reduced surface-damaged region and high crystallinity of nanorods.     

Synthesis and characterization of novel red emitting nanocrystal Gd6WO12:Eu phosphors

Novel nanosized Gd₆WO₁₂:Eu³⁺ phosphors were synthesized via a co-precipitation reaction. The crystal structure and morphology of the phosphors were characterized by using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). It was found that the resultant powders show a regular and sphere-like shape with average particle size of 60 nm. Intrinsic red emission originating from Eu³⁺ was observed while excited at the W⁶⁺→O²⁻ and Eu³⁺→O²⁻ charge transfer bands or f-f absorption bands. The color coordinates of the phosphors were calculated to be x=0.625, y=0.375. The concentration dependence of the luminescence was studied, and optimum doping concentration for obtaining maximum emitting intensity was confirmed to be around 12 mol%. It was also found that the electric dipole-dipole interaction plays an important role for quenching luminescence of Eu³⁺.     

Low-temperature thermoluminescence in CaGa2S4:Eu

In the last years many insulating and semiconducting materials activated with rare-earth elements were found to exhibit phosphorescence and thermoluminescence properties, and are attracting increasing interest due to the variety of application of long-lasting phosphors. In this work we studied the phosphorescence decay and thermoluminescence properties of CaGa₂S₄:Eu²⁺ as a function of temperature in the 9-325 K range. The comparison between spectra recorded as a function of time delay from the excitation pulse at different temperatures indicates that long-lasting emissions peaked at about 2.2 eV occurs at Eu²⁺ sites. Thermoluminescence glow curve is characterized by five components at 69, 98, 145, 185 and 244 K. Experimental data are discussed in the framework of generalized order of kinetic model and allow to estimate the activation energies of trapping defects. The origin of glow components at 69, 98, 145 and 244 K is correlated to trapping defects induced by Eu²⁺ doping, while the component at 185 K is attributed to a continuous distribution of defects.     

Emission color variation of M2SiO4:Eu (M=Ba, Sr, Ca) phosphors for light-emitting diode

The luminescent properties of alkaline earth orthosilicates M₂SiO₄ (M=Ba, Sr, Ca) doped with Eu²⁺ ions are investigated. Two emission bands are assigned to the f-d transitions of Eu²⁺ ions doped into two different cation sites in host lattices confirmed by electron paramagnetic resonance signal. Two emission bands show the different emission color variation with substituting M²⁺ cations with smaller cations. This behavior is discussed in terms of two competing factors of the crystal field strength and covalence. Also the decay times are in order of 600-1000 ns. These phosphors with maximum excitation of around 370 nm can be applied as a color-tunable phosphor for light-emitting diode based on ultraviolet chip/phosphor technology.     

Correlation of photoluminescence of (Y, Ln)VO4:Eu (Ln=Gd and La) phosphors with their crystal structures

We have studied the photoluminescence (PL) of (Y, Ln)VO₄:Eu³⁺ (Ln=La and Gd) phosphors and the correlation of the PL of those phosphor with their crystal structure. It is found that (Y, Gd)VO₄:Eu³⁺ phosphors have the same crystal structure as YVO₄:Eu³⁺, which is tetragonal with a little different lattice parameters. In the case of (Y, La)VO₄:Eu³⁺ phosphors, however, the gradual change from tetragonal to monoclinic structure of host lattice was observed as the amount of La ion increased. To investigate the PL property of (Y, Ln)VO₄:Eu³⁺ (Ln=La and Gd) phosphors, vacuum ultraviolet (VUV) and ultraviolet (UV) excitation were used. The favorable crystal structure for the PL intensity of orthovanadate phosphor under 147 and 254 nm excitation was tetragonal containing Gd ion and under 365 nm excitation was monoclinic containing La ion which might have the lowest site symmetry for Eu³⁺ ion.     

Temperature-dependent emission spectra of M2SiO4:Eu (M=Ca, Sr, Ba) phosphors for green and greenish white LEDs

The temperature dependence of emission spectra of alkaline earth ortho-silicates M₂SiO₄ (M=Ca, Sr, Ba) doped with Eu²⁺ ions is investigated. Two emission bands of Sr₂SiO₄:Eu²⁺ show the normal redshift with broadening bandwidth and decreasing emission intensity as an increase in temperature. On the other hand, emission bands of Ca₂SiO₄:Eu²⁺ and Ba₂SiO₄:Eu²⁺ show the anomalous blueshift with increasing temperature. For Ca₂SiO₄:Eu²⁺ and Ba₂SiO₄:Eu²⁺, the temperature dependence of the emission color can be described in terms of back tunneling from the excited state of low-energy emission band to the excited state of high-energy emission band in the configuration coordinate diagram. Our phosphors have a promising potential as phosphors for green or greenish white-light-emitting diode pumped by ultraviolet chip.     

Preparation and characterization of tunable YVO4: Bi, Sm phosphors

Yttrium vanadate phosphors co-doped with Bi³⁺- and Sm³⁺ ions have been prepared via the solid-state reaction as well as via the sol-gel method. The luminescence studies demonstrate the potential of the prepared phosphors as multi-color emitters, which can be achieved by adjusting the excitation wavelengths. The excitation spectra of Bi³⁺- and Sm³⁺ co-doped phosphors clearly revealed energy transfer from Bi³⁺ to Sm³⁺ ions. When the co-doped phosphors were excited at 254 nm, the emission from Bi³⁺ was dominant. Upon excitation at 365 nm, the emission from both Bi³⁺ and Sm³⁺ was detected. With 410 nm excitation, Sm³⁺ ions were selectively excited to yield intense red emission. It is shown that the prepared phosphors with optimal concentrations of Bi³⁺ and Sm³⁺ can be excited at 254, 365 and 410 nm to yield yellow, orange and red emissions, respectively.     

Enhanced luminescence of GdTaO4:Eu thin-film phosphors by K doping

The effect of K⁺ ions on GdTaO₄:Eu³⁺ thin-film phosphors was investigated in order to improve their luminescent properties. The GdTaO₄:Eu_0.1, K_x thin films were synthesized by sol-gel process, and characterized through measuring their microstructure and luminescence. The results indicated that photoluminescence (PL) intensity of GdTaO₄:Eu³⁺ film was improved remarkably by K doping. There were two maxima in the curve of PL intensity against K⁺ dopant concentration, where one was improved up to 2.1 times at x = 0.001 and the other was enhanced up to 2.7 times at x = 0.05. The first maximum was regarded as the alteration of the local environment surrounding the Eu³⁺ activator by incorporation of K⁺ ions, and the second maximum was due to the flux effect. Additionally, the luminescence increased with the increase of firing temperature from 800 °C to 1200 °C.     

Photoluminescence and thermoluminescence characterization of Eu- and Dy -activated Ca3(PO4)2 phosphor

Rare-earth-doped polycrystalline Ca₃(PO₄)₂:Eu, Ca₃(PO₄)₂:Dy and Ca₃(PO₄)₂:Eu,Dy phosphors prepared by a modified solid-state synthesis has been studied for its X-ray diffraction, thermoluminescence (TL) and photoluminescence (PL) characteristics. The PL emission spectra of the phosphor suggest the presence of Eu³⁺ ion in Ca₃(PO₄)₂:Eu and Dy³⁺ ion in Ca₃(PO₄)₂:Dy lattice sites. The TL glow curve of the Ca₃(PO₄)₂:Eu compounds has a simple structure with a prominent peak at 228 °C, while Ca₃(PO₄)₂:Dy peaking at 146 and 230 °C. TL sensitivity of phosphors are compared with CaSO₄: Dy and found 1.52 and 1.20 times less in Ca₃(PO₄)₂:Eu and Ca₃(PO₄)₂:Dy phosphors, respectively. The Ca₃(PO₄)₂:Eu,Dy phosphors shows switching behavior under two different excitation wavelengths and enhancement in PL intensity of Dy³⁺ ions were reported. The paper discusses the photoluminescence and thermoluminescence behavior of Eu³⁺ and Dy³⁺ ion in Ca₃(PO₄)₂ hosts, it may be applicable to solid-state lighting as well as thermoluminescence dosimetry applications.     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.     

Determinations of the transient thermal lensing effect in metal cluster Polymer {WS4Cu4I2(bpe)3}n solution by the use of the Z-scan

The nonlinear optical (NLO) properties of a novel cluster Polymer {WS₄Cu₄I₂(bpe)₃}_n solution are studied by using Z-scan technique with laser pulses of 4.5 ns pulse-width at a wavelength of 532 nm. The results show that the cluster solution possesses strong nonlinear absorption and refraction. Nonlinear refraction of the cluster is composed of third-order nonlinear refraction and transient thermal effect. The thermal effect is mainly due to the strong nonlinear absorption. Numerical simulations obtained by solving simultaneously photo-acoustic and electromagnetic wave equations, agrees basically with experimental results.     

Effects of non-stoichiometry on crystallinity, photoluminescence and afterglow properties of Sr2MgSi2O7:Eu, Dy phosphors

Eu²⁺, Dy³⁺ co-doped Sr₂MgSi₂O₇ phosphors with deficient, stoichiometric or excess amounts of silicon are prepared by solid-state reaction. XRD and SEM results indicate that all the samples studied are found to be free from impurities and samples with SiO₂ excess possess better crystallinity and larger grain size. Photoluminescence reveals that the position of Eu²⁺ emission is not changed with various compositions. However, both photoluminescence intensity and afterglow properties are increased by an incorporation of excess SiO₂ and are decreased by SiO₂ deficiency. The thermoluminescence results show that the corresponding increase or decrease in afterglow is associated with trap density, but no change in trap depth. The underlying reason of photoluminescence and afterglow enhancement is discussed.     

Preparation and characterization of LiAEAlF6:Eu (AE=Mg, Ca, Sr or Ba) phosphors

Wet chemical synthesis of LiAEAlF₆:Eu (AE=Mg, Ca, Sr or Ba) phosphors is described. Formation of single-phase compounds LiCaAlF₆ and LiSrAlF₆ was confirmed by XRD. LiCaAlF₆:Eu and LiSrAlF₆:Eu phosphors exhibited broadband emission corresponding to intraconfigurational transition 4f⁶5d¹→4f⁷(⁸S_7/2). LiMgAlF₆:Eu exhibits a narrow line emission corresponding to ⁶P_J→⁸S_7/2 transition of 4f⁷ configuration besides the band emission. LiBaAlF₆:Eu, on the other hand, was found to yield predominantly line emission.     

Luminescent properties of R2(MoO4)3:Eu (R=La, Y, Gd) phosphors prepared by sol-gel process

A series of red phosphors R_0.8Eu_1.2(MoO₄)₃ (R=La, Y, and Gd) have been synthesized by sol-gel method. The crystallization processes of the phosphor precursors were characterized by X-ray diffraction (XRD) and thermogravimetry-differential thermal analysis (TG-DTA), and the properties of these resulting phosphors have also been characterized by photoluminescence (PL) spectra and reflectance spectra. Field emission scanning electron microscopy (FE-SEM) was also used to characterize the shape and the size of the samples. The results of TG-DTA and XRD indicated that all of the R_0.8Eu_1.2(MoO₄)₃ (R=La, Y, and Gd) phosphors crystallized completely at 650 °C. Y_0.8Eu_1.2(MoO₄)₃ and Gd_0.8Eu_1.2(MoO₄)₃ have two structures, monoclinic and orthorhombic, while La_0.8Eu_1.2(MoO₄)₃ only adopts monoclinic structure. The luminescent properties of phosphors R_0.8Eu_1.2(MoO₄)₃ (R=La, Y, and Gd) are dependent on their structures to some extent. The orthorhombic Y_0.8Eu_1.2(MoO₄)₃ and Gd_0.8Eu_1.2(MoO₄)₃ phosphors show very similar luminescent properties, which differ from those of phosphors with monoclinic structure. For all of R_0.8Eu_1.2(MoO₄)₃ (R=La, Y, and Gd) phosphors, intense red emission is obtained by exciting at ∼394 and ∼465 nm which are owing to the sharp ⁷F₀→⁵L₆ and ⁷F₀→⁵D₂ lines of Eu³⁺. Two strongest lines at 394 and 465 nm in excitation spectra of these phosphors match well with the two popular emissions from near-UV and blue GaN-based LEDs, so they could be used as red components for white light-emitting diodes.     

Optical investigation of charge-transfer transitions in spinel Co3O4

Optical transitions in normal-spinel Co₃O₄ have been identified by investigating the variation of its optical absorption spectrum with the replacement of Co by Zn. Three optical-transition structures were located at about 1.65, 2.4, and 2.8 eV from the measured dielectric function of Co₃O₄ by spectroscopic ellipsometry. The variation of the absorption structures with the Zn substitution (Zn_xCo_3−xO₄) can be explained in terms of charge-transfer transitions involving d states of Co ions. The 1.65 eV structure is assigned to a d-d charge-transfer transition between the t_2g states of octahedral Co³⁺ ion and t₂ states of tetrahedral Co²⁺ ion, t_2g(Co³⁺)→t₂(Co²⁺). The 2.4 and 2.8 eV structures are interpreted as due to charge-transfer transitions involving the p states of O²⁻ ion: p(O²⁻)→t₂(Co²⁺) for the 2.4 eV absorption and p(O²⁻)→e_g(Co³⁺) for the 2.8 eV absorption. The observed gradual reduction of the 1.65 and 2.4 eV absorption strength with the increase of the Zn composition for Zn_xCo_3−xO₄ can be explained in terms of the substitution of the tetrahedral Co²⁺ sites by Zn²⁺ ions. The crystal-field splitting Δ_Oh between the e_g and the t_2g states of the octahedral Co³⁺ ion is estimated to be 2 eV.     

Synthesis and luminescence properties of Tb:NaGd(WO4)2 novel green phosphors

Tb³⁺:NaGd(WO₄)₂ (Tb:NGW) phosphors with different Tb³⁺ concentrations have been synthesized by a mild hydrothermal process directly without further sintering treatment. X-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence excitation and emission spectra and decay curve were used to characterize the Tb:NGW phosphors. XRD analysis confirmed the formation of NGW with scheelite structure. SEM study showed that the obtained Tb:NGW phosphors appeared to be nearly spherical and their sizes ranged from 1 to 1.5 μm. The excitation spectra of these systems showed an intense broad band with maximum at 270 nm related to the O→W ligand-to-metal charge-transfer state. Photoluminescence spectra indicated the phosphors emitted strong green light centered at 545 nm under UV light excitation. Analysis of the photoluminescence spectra with different Tb³⁺ concentrations revealed that the optimum dopant concentration for Tb³⁺ is about 15 at% of Tb³⁺ ions in Tb:NGW phosphors.     

Crystallinity and morphology dependent luminescence of Li-doped Y2−xGdxO3:Eu thin film phosphors

The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of pulsed laser deposited Y_2−xGd_xO₃:Eu³⁺ thin film phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of films depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li⁺ doping was found to effectively enhance not only the crystallinity but also the luminescent brightness of Y_2−xGd_xO₃:Eu³⁺ thin films. In particular, the incorporation of Li and Gd into the Y₂O₃ lattice could induce remarkable increase in the PL. The highest emission intensity was observed Li-doped Y_1.35Gd_0.6O₃:Eu³⁺ thin films whose brightness was increased by a factor of 4.6 in comparison with that of Li-doped Y₂O₃:Eu³⁺ thin films.     

Red electroluminescent process excited by hot holes in SrGa2S4:Ce, Mn thin film

This paper reports the first observation of red electroluminescence (EL) in SrGa₂S₄:Ce, Mn thin film. The EL spectrum consists of single broad emission band having a peak wavelength of 665 nm. The dominant EL decay time was 31 μs. The relationship between the applied voltage and the EL waveform was measured in single insulating thin film electroluminescent (TFEL) devices. An asymmetric EL waveform was observed in SrGa₂S₄:Ce, Mn TFEL devices under a rectangular applied voltage. The polarity of the EL waveform in these devices was different from the waveform in manganese-activated zinc sulfide ZnS:Mn devices. This indicates that hot holes excite the Mn²⁺ ions to cause the red EL.     

Effect of Sr substitution on photoluminescent properties of BaAl2O4:Eu, Dy

Phosphor material BaAl₂O₄:Eu²⁺, Dy³⁺ with varying compositions of Sr substitution were prepared by the solid-state synthesis method. The phosphor compositions were characterized for their phase and crystallinity by XRD, SEM and TEM. Photoluminescence (PL) properties were investigated measuring PL and decay time for varying Ba/Sr compositions. The PL results show the blue shift in the luminescence properties in Sr substituted BaAl₂O₄:Eu²⁺, Dy³⁺ compared to parent BaAl₂O₄:Eu²⁺, Dy³⁺. It is probably due to the influence of 5d electron states of Eu²⁺ in the crystal field because of atomic size variation causing crystal defects. Dy³⁺ ion doping in the phosphor generates deep traps, which results in long afterglow phosphorescence.