From silver nanoparticles to thin films: Evolution of microstructure and electrical conduction on glass substrates

Silver nanoparticles embedded in a dielectric matrix are investigated for their potential as broadband-absorbing optical sensor materials. This contribution focuses on the electrical properties of silver nanoparticles on glass substrates at various morphological stages. The electrical current through thin films, consisting of silver nanoparticles, was characterized as a function of film thickness. Three distinct conductivity zones were observed. Two relatively flat zones (“dielectric” for very thin films and “metallic” for films thicker than 300-400 Å) are separated by a sharp transition zone where percolation dominates. The dielectric zone is characterized by isolated particle islands with the electrical conduction dominated by a thermally activated tunneling process. The transition zone is dominated by interconnected silver nanoclusters—a small increase of the film thickness results in a large increase of the electrical conductivity. The metallic conductivity zone dominates for thicknesses above 300-400 Å.     

Formation of periodic structures by the space-selective precipitation of Ge nanoparticles in channel waveguides

Thermally stabilized channel waveguides with Bragg gratings were fabricated by the space-selective precipitation technique of crystalline Ge nanoparticles using KrF excimer laser irradiation. The periodic structures consisting of Ge nanoparticles were formed in Ge-B-SiO₂ thin glass films after exposure to an interference pattern of the laser followed by annealing at 600 °C. The channel waveguides with the periodic structures were fabricated by the cladding of the patterned Cr layers on the films. The diffraction peak for the TE-like mode of 11.8 dB depth was observed clearly at a wavelength of 1526.4 nm, indicating that the periodic structure also served as the optical band-pass filter in optical communication wavelength. The spectral shape, diffraction efficiency, and diffraction wavelength remained unchanged even after annealing at 400 °C. Furthermore, a low temperature dependence of the diffraction wavelength - as low as 8.1 pm/°C - was achieved. The diffraction efficiency was further enhanced after subsequent annealing at 600 °C. The space-selective precipitation technique is expected to be useful for the fabrication of highly reliable optical filters or durable sensing devices operating at high temperature.     

Growth and characterization of ZnSe/CdSe/ZnSe quantum dots fabricated by using an alternate molecular beam supplying method

ZnSe/CdSe/ZnSe structures inserted CdSe thin layer are fabricated using an alternate molecular beam supply (ALS). Examining the PL peak energy dependence on beam irradiation time in ALS cycle, we studied the initial stage of CdSe growth. When CdSe below the critical thickness is supplied on ZnSe grown on GaAs (1 0 0), two kinds of 2D islands (platelets) appear. We confirmed the alloying of 2D-CdSe islands and 3D-CdSe islands (dots) is prominent under Cd beam irradiation in ALS growth.     

Synthesis, characterization, and electrical properties studies of cadmium selenide nanoparticle

A new solvothermal route was used for the preparation of CdSe nanoparticles at 160 °C for 10 h using ethylenediamine as a solvent. X-ray powder diffraction and transmission electron microscope were employed to characterize the size, morphology, and crystalline structure of the as-prepared sample. The formation process was discussed and it revealed a uniform hexagonal shape of CdSe nanoparticle with good dispersion, with an average size of 35 nm. Fourier transform infrared and ultraviolet-visible spectroscopies were used to follow the reaction and to determine the optical band gap. DC and AC electrical conductivities were studied and the activation energies were determined as well as the conduction mechanism. The results indicated that CdSe behaves as a semiconducting material. The dielectric properties were measured as a function of temperature at different frequencies ranging from 100 Hz to 100 kHz. The increase of the dielectric constant with increasing temperature was discussed on the basis of increasing polarizability, while its decrease with increasing frequency is attributed to the dielectric dispersion.     

Solvothermal synthesis and characterization of CdSe nanocrystals with controllable phase and morphology

Zinc blende (ZB) CdSe hollow nanospheres were solvothermally synthesized from the reaction of Cd(NO₃)₂·4H₂O with a homogeneously secondary Se source, which was first prepared by dissolving Se powder in the mixture of ethanol and oleic acid at 205 °C. As Se power directly reacted with Cd(NO₃)₂·4H₂O in the above mixed solvents, wurtzite (W) CdSe solid nanoparticles were produced. Time-dependent experiments suggested that the formation of CdSe hollow nanospheres was attributed to an inside-out Ostwald ripening process. The influences of reaction time, temperature and ethanol/oleic acid volume ratio on the morphology, phase and size of the hollow nanospheres were also studied. Infrared (IR) spectroscopy investigations revealed that oleic acid with long alkene chains behaved as a reducing agent to reduce Se powder to Se²⁻ in the synthesis. Photoluminescence (PL) measurements showed that the ZB CdSe hollow nanospheres presented an obvious blue-shifted emission by 42 nm, and the W CdSe solid nanoparticles exhibited a band gap emission of bulk counterpart.     

Baking impact on photoelectrochemical cells performance of electrodeposited CdSe films

Cadmium selenide (CdSe) nanocrystalline thin films in the form of upright nanocones, perpendicular to substrate surface, are grown electrochemically onto a conducting and transparent indium-tin-oxide substrate at room temperature and impact of baking under oxygen flow on their structure, morphology, optical absorbance and dark-light photoelectrochemical cell performance is explored. Crystallinity improvement followed by enhancement in the surface roughness 11-19 nm and reduction in water contact angle from 60° to 22° (±0.2)° due to baking impact showed increase in crystallite size from 25 to 100 Å. Increase in current density from 0.07 to 5.61 mA/cm² after baking under oxygen flow has promoted the conversion efficiency to 0.5% from 0.007%.     

Investigation of ferromagnetic coupling between Co layers in a Co/Pt multilayer with perpendicular anisotropy

The coercivity of a Co/Pt multilayer with out-of-plane anisotropy can be lowered greatly if it is grown onto an ultrathin NiO underlayer . By making use of this characteristic, a series of samples glass/NiO(10 Å)/[Co(4 Å)/Pt(5 Å)]₃/Pt(x Å)/[Co(4 Å)/Pt(5 Å)]₃ with different Pt spacer thickness have been prepared to determine the ferromagnetic (FM) coupling between Co layers across the Pt layer. The measurements of major and minor hysteresis loops have shown that the FM coupling between the top and bottom Co/Pt multilayers decreases monotonically with the Pt layer thickness and disappears above the Pt layer thickness of 40 Å. This thickness of 40 Å is much larger than that in the literature. In addition to the FM coupling between the top and bottom Co/Pt multilayers across the Pt spacer, there exists a weak biquadratic coupling, which induces the broad transition of the bottom Co/Pt multilayer.     

Optical properties of sol-gel fabricated Ni/SiO2 glass nanocomposites

Nickel nanoparticles were grown in silica glass by annealing of the sol-gel prepared silicate matrices doped with nickel nitrate. TEM characterization of Ni/SiO₂ glass proves the formation of isolated spherical nickel nanoparticles with mean sizes 6.7 and 20 nm depending on annealing conditions. The absorption and photoluminescence spectra of Ni/SiO₂ glasses were measured. In the absorption spectra, we observed the band related to the surface plasmon resonance (SPR) in Ni nanoparticles. The broadening of SPR was observed with decrease of Ni nanoparticle size. The width of the surface plasmon band decreases 1.5 times at the lowering of temperature from 293 to 2 K because of strong electron-phonon interaction. The spectra proved the creation of nickel oxide NiO clusters and Ni²⁺ ions in silica glass as well.     

Optical properties of sol-gel fabricated Mn/SiO2 nanocomposites: Observation of surface plasmon resonance in Mn nanoparticles

Manganese nanoparticles were grown in silica glass and silica film on silicon substrate by annealing of the sol-gel prepared porous silicate matrices doped with manganese nitrate. Annealing of doped porous silicate matrices was performed at various conditions that allowed to obtain the nanocomposite glasses with various content of metallic Mn. TEM of Mn/SiO₂ glass indicates the bimodal size distribution of Mn nanoparticles with mean sizes of 10.5 nm and 21 nm. The absorption and photoluminescence spectra of Mn/SiO₂ glasses were measured. In the absorption spectra at 300 nm (4.13 eV) we observed the band attributed to the surface plasmon resonance in Mn nanoparticles. The spectra proved the creation of Mn²⁺ and Mn³⁺ ions in silica glass as well. The absorption spectra of Mn/SiO₂ glasses annealed in air prove the creation of manganese oxide Mn₂O₃. The measured reflection spectra of Mn/SiO₂ film manifest at 240-310 nm the peculiarity attributed to surface plasmons in Mn nanoparticles.     

Radiative quantum efficiency of CdSe/ZnS core-shell colloidal solutions: Size-dependence

Thermo-optical parameters of CdSe/ZnS core-shell nanoparticles suspended in toluene were measured using a thermal lens (TL) technique. TL transient measurements were performed using the mode-mismatched dual-beam (excitation and probe) configuration. A He-Ne laser at λ_p = 632.8 nm was used as the probe beam and an Ar⁺ laser (at λ_e = 514.5 nm) was used as the excitation beam for studies as a function of both core size and concentration of CdSe/ZnS nanocrystals. The fraction thermal load (φ) and radiative quantum efficiencies (η) of the CdSe/ZnS were determined. Dependence on core size (∼2-5 nm) and concentration (∼0.01-0.62 mg/ml) was observed for both φ and η parameters.     

Enhanced cleaning of photoresist film on a transparent substrate by backward irradiation of a Nd:YAG laser

Laser cleaning of a photoresist (PR) on a glass substrate using ns-pulsed Nd:YAG laser was studied. The direction of the substrate facing the laser beam was varied as a main parameter as well as the power of the laser beam. The backward irradiation (BWI) of the third harmonic beam (355 nm) completely removed 1.2 μm thick PR layer with three pulses at 1.5 J/cm² leaving no residues behind; while the forward irradiation (FWI) at the same condition just partially cleaned it. To investigate the difference of removal mechanisms between irradiation directions, the size distributions of particulates generated during laser cleaning were observed using an optical particle counter. The concentration of micron-sized particulates increased with increasing laser fluence up to 1 J/cm² for FWI and 0.5 J/cm² for BWI and then decreased at higher fluences because the target was a very thin film. The concentration of larger particulates for BWI was much higher than that for FWI implying the difference in removal mechanisms. In consideration of the size characteristics of the particulates and the temperature profiles of the PR layer, the most probable distinct mechanism for the BWI would be a blasting due to high temperature at the PR/glass interface. The particulate number concentration decreased rapidly after the completion of cleaning, suggesting that the measurement of the particulate concentration could detect the progress of the cleaning. Our results demonstrated that the backward irradiation will be useful for the laser cleaning of film-type contaminants on an optically transparent substrate.     

Formation of nanocrystalline TiO2 by 100 MeV Au

Nanocrystalline TiO₂ structures are formed by irradiation of 100 MeV Au⁸⁺ ion beam on amorphous thin films of TiO₂. Surface morphology of the nanocrystals is studied by Atomic Force Microscopy (AFM). Amorphous to nanocrystalline phase transformation is identified by Glancing Angle X-ray Diffraction (GAXRD) and Raman spectroscopic studies. Optical characterization is carried out by UV-VIS spectroscopy technique. Blue shift observed in absorption band edge indicates the formation of nanophase TiO₂ after irradiation. The impinging swift heavy ion (100 MeV Au⁸⁺) induces nucleation of nanoparticles along the ion trajectory through inelastic collisions of the projectile with electrons of the material. It is observed that the shape and size of nanoparticles formed is dependant on the irradiation fluence.     

Cr-related centers in Gd3Ga5O12 polycrystals

The luminescence excitation spectra, emission spectra under photo- and X-ray excitation, luminescence decay kinetics and thermostimulated luminescence (TSL) of Gd₃Ga₅O₁₂ garnet (GGG) polycrystalline samples have been investigated. It was established that the spectrum of Cr³⁺ ion emission were present in all TSL peaks. The activation energies of traps that are responsible for appearance of TSL in the region 295-600 K were estimated. It is shown that delocalization of electrons from the Cr³⁺e traps leads to the appearance of thermoluminescence (TL) glow peak at 390 K. The nature of other TSL peaks is discussed. The influence of visible light on the TSL intensity of the preliminary X-ray-irradiated samples is shown.     

Studies on fabrication of Ag/Tl2Ba2Ca2Cu3O10/CdSe heterostructures with electrochemical technique

The Ag/Tl₂Ba₂Ca₂Cu₃O₁₀/CdSe heterostructure was fabricated at room temperature by soft electrochemical processing technique for the first time. The formation of the heterostructure with non-diffusive interfaces was confirmed by X-ray diffraction. The crystallite sizes determined for Tl-2223 and CdSe films were 33 nm and 25 nm, respectively. The Tl₂Ba₂Ca₂Cu₃O₁₀ film electrodeposited onto Ag-substrate has shown the superconducting transition temperature T_c at 116.5 K and J_c = 2.1 × 10³ A/cm². These values were found to improve after the deposition of CdSe onto Ag/Tl-2223 films. The effect of red He-Ne laser irradiation on the superconducting properties of heterostructure are studied and discussed at length in this paper.     

Luminescence and EPR studies of YBO3:U

Yttrium borate doped with uranium was prepared by mixing and heating yttrium oxide obtained through oxalate precipitation route, boric acid and requisite amount of nuclear-grade uranium oxide at high temperature. Photoluminescence (PL), thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) studies were carried out on gamma-irradiated doped/undoped yttrium borate samples in the temperature range 300-600 K. TSL studies showed the presence of two glow peaks at 414 and 471 K. PL studies along with lifetime decay investigation suggested uranium goes in the matrix as UO₂²⁺. EPR studies showed the presence of O₂⁻radical ion along with electron trapped in defect centres, which might have been produced for charge compensation. Apart from this, CO₂⁻ radical was also observed in the system having its origin from residual oxalate ion. Temperature dependence EPR studies of the observed radical confirmed the involvement of the CO₂⁻ and dioxide radical ion in the observed glow peaks. By correlating the TSL, PL and ESR data, probable mechanism is proposed for the observed TSL glow in the system.     

Acquisition of vector hysteresis loops from micro-arrays of nano-magnets

A modified scanning Kerr microscope has been used as a static Kerr magnetometer to acquire in-plane vector hysteresis loops from square Si/Ta(50 Å)/Co₈₀Fe₂₀(40 Å)/Ni₈₈Fe₁₂(108 Å)/Ta(100 Å) elements with size ranging from 123 nm to 10 μm. The nanoscale elements were arranged in square arrays of 4 μm size. The laser beam was focused to a sub-micron spot, while polarization changes were recorded with an optical bridge detector containing a beam-splitting polarizer and two quadrant photodiodes. The coercive field exhibited a non-monotonic increase from 11 Oe in the 10 μm element to 170 Oe in the 123 nm elements. Loops acquired with the field applied parallel to the easy and hard in-plane uniaxial anisotropy axes were observed to become more similar in shape as the element size decreased.     

Gamma radiation induced changes in nuclear waste glass containing Eu

Gamma radiation induced changes were investigated in sodium-barium borosilicate glasses containing Eu. The glass composition was similar to that of nuclear waste glasses used for vitrifying Trombay research reactor nuclear waste at Bhabha Atomic Research Centre, India. Photoluminescence (PL) and electron paramagnetic resonance (EPR) techniques were used to study the speciation of the rare earth (RE) ion in the matrix before and after gamma irradiation. Judd-Ofelt (J-O) analyses of the emission spectra were done before and after irradiation. The spin counting technique was employed to quantify the number of defect centres formed in the glass at the highest gamma dose studied. PL data suggested the stabilisation of the trivalent RE ion in the borosilicate glass matrix both before and after irradiation. It was also observed that, the RE ion distributes itself in two different environments in the irradiated glass. From the EPR data it was observed that, boron oxygen hole centre based radicals are the predominant defect centres produced in the glass after irradiation along with small amount of E’ centres. From the spin counting studies the concentration of defect centres in the glass was calculated to be 350 ppm at 900 kGy. This indicated the fact that bulk of the glass remained unaffected after gamma irradiation up to 900 kGy.     

Synthesis of Cadmium Selenide thin films at low-temperature by simple Chemical route and their Characterization

Crystalline CdSe thin film has been deposited using appropriate precursor solution containing cadmium sulfate octahydrate, tartaric acid, potassium hydroxide, ammonia and sodium selenosulfate. The effect of parameters such as bath composition, deposition temperature, pH of the solution, speed of the rotation and the specificity of complexing agent on growth process is studied. The ‘as-deposited’ CdSe thin film was found to be red in color, specularly reflective and well adherent to the glass substrate. The crystalline phase of the deposited sample was hexagonal wurtzite-type. The analysis of optical absorption data shows energy band gap energy (E_g) 2.01 eV. The morphological study and compositional analysis of film sample have been discussed. The electrical resistivity of CdSe thin film was found to the order of 10⁶ Ω cm.     

Radiative quantum efficiency of CdSe/ZnS quantum dots suspended in different solvents

The radiative quantum efficiencies η of the CdSe/ZnS core-shell nanoparticles embedded into polymethyl methacrylate (PMMA) and suspended in three different solvents: chloroform (CHCl₃), toluene (C₆H₅CH₃) and tetrahydrofuran (C₄H₈O) were measured using thermal lens (TL) technique. The mode-mismatched pump-probe TL measurements were accomplished in function of the CdSe/ZnS quantum-dot concentration (12-60 mg/ml) at λ_e = 594 nm (pump) and λ_p = 632.8 nm (probe). The values obtained for η were higher for CdSe/ZnS nanoparticles suspended in tetrahydrofuran and chloroform, as compared to the values for toluene. Thermal diffusivity (D) and the absolute nonradiative quantum efficiency (φ) were determined.     

Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions

A series of exchange-biased magnetic tunneling junctions (MTJs) were made in an in-plane deposition field (h) = 500 Oe. The deposition sequence was Si(1 0 0)/Ta(30 Å)/CoFeB(75 Å)/AlO_x(d Å)/Co(75 Å)/IrMn(90 Å)/Ta(100 Å), where d was varied from 12 Å to 30 Å. The MTJ was formed by the cross-strip method with a junction area of 0.0225 mm². The tunneling magnetoresistance (ΔR/R) of each MTJ was measured. The high-resolution cross-sectional transmission electron microscopic (HR X-TEM) image shows the very smooth interface and clear microstructure. X-ray diffraction (XRD) demonstrates that the IrMn layer of the MTJ exhibits a (1 1 1) texture. From the results (ΔR/R) increases from 17% to 50%, as d increases from 12 Å to 30 Å. The tunneling resistance (R_o) of these junctions ranges from 150 Ω to 250 Ω. The exchange-biasing field (H_ex) of the MTJ is 50-95 Oe. Finally, the saturation resistance (R_s) was measured as a function of the angle (α) of rotation, where α is the angle between h and the in-plane saturation field (H_s) = 1.1 kOe. The following figure presents the dependence of R_s on α, instead of originally expected independence, the curve actually varies with a period of π.