Photoluminescence properties of SiNx/Si amorphous multilayer structures grown by plasma-enhanced chemical vapor deposition

Very thin (nanometric) silicon layers were grown in between silicon nitride barriers by SiH₂Cl₂/H₂/NH₃ plasma-enhanced chemical vapor deposition (PECVD). The multilayer structures were deposited onto fused silica and silicon substrates. Deposition conditions were selected to favor Si cluster formation of different sizes in between the barriers of silicon nitride. The samples were thermally treated in an inert atmosphere for 1 h at 500 °C for dehydrogenation. Room-temperature photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical properties of the structures. UV-VIS absorption spectra present two band edges. These band edges are well fitted by the Tauc model typically used for amorphous materials. RT-PL spectra are characterized by strong broad bands, which have a blue shift as a function of the deposition time of the silicon layer, even for as-grown samples. The broad luminescence could be associated with the confinement effect in the silicon clusters. After annealing of the samples, the PL bands red shift. This is probably due to the thermal decomposition of N-H bonds with further effusion of hydrogen and better nitrogen passivation of the nc-Si/SiN_x interfaces.     

Luminescence properties of europium-terbium double activated calcium tungstate phosphor

Double incorporation of Eu³⁺ and Tb³⁺ ions into a CaWO₄ crystalline lattice modifies the luminescence spectrum due to the formation of new emission centers. Depending on the activators concentration and nature, as well as on the interaction between the activators themselves, the luminescence color can be varied within the entire range of the visible spectrum. Variable luminescence was obtained when CaWO₄:Eu,Tb phosphors with 0-5 mol% activator ions were exposed to relatively low excitation energies as UV (365 and 254 nm). Under high energy excitation such as VUV (147 nm) radiation or electron beam, white light has been observed.This material with controlled properties seems to be promising for the applications in fluorescent lamps, colored lightning for advertisement industries, and other optoelectronic devices.     

Interference of resonance luminescence of exciton polaritons in CuGaS2 crystals

The nonmodulated and wavelength-modulated reflection spectra of CuGaS₂ crystals for the polarization EIIc of 10 K are studied. The states n = 1, 2 and 3 of the excitons Γ₄ (A-excitons) and n = 1, n = 2 of B- and C-excitons are found. The nonmodulated absorption spectra for the polarization E⊥c at 10 K have been studied. The states n = 1, 2 and 3 of Γ₅ excitons are found. The main parameters of the A (Γ₄, Γ₅) and B, C exciton series at the energies of the longitudinal and transverse excitons Γ₄ for the states n = 1 and n = 2, the effective masses of electrons and holes are determined. The photoluminescence peaks were observed at n = 3 and n = 4 of the excitons Γ₅ in the luminescence spectra excited by the line 4880 Å of Ar⁺ laser. In the luminescence spectra the interference is found.     

Luminescent characterization of CaAl2S4:Eu powder

The photoluminescent (PL) emission and excitation behaviour of green-emitting CaAl₂S₄:Eu²⁺ powder phosphor is reported in detail. CaAl₂S₄:Eu²⁺ emission provides good CIE colour coordinates (x=0.141; y=0.721) for the green component in display applications. Powder with a dopant concentration of 8.5 mol% shows the highest luminescence efficiency. Temperature dependence of the radiative properties, such as luminescence intensity and decay time, was investigated. In particular, the Stokes shift, the mean phonon energy, the redshift, the energy of the f→d and d→f transition and the crystal field splitting of the CaAl₂S₄:Eu²⁺ emission were determined. The thermal quenching of the emission was examined.     

Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications

In this paper, we present an experimental study on the chemical and electrochemical etching of silicon carbide (SiC) in different HF-based solutions and its application in different fields, such as optoelectronics (photodiode) and environment (gas sensors). The thin SiC films have been grown by pulsed laser deposition method. Different oxidant reagents have been explored. It has been shown that the morphology of the surface evolves with the etching conditions (oxidant, concentration, temperature, etc.). A new chemical polishing solution of polycrystalline 6H-SiC based on HF:Na₂O₂ solution has been developed. Moreover, an electrochemical etching method has been carried out to form a porous SiC layer on both polycrystalline and thin SiC films. The PL results show that the porous polycrystalline 6H-SiC and porous thin SiC films exhibited an intense blue luminescence and a green-blue luminescence centred at 2.82 eV (430 nm) and 2.20 eV (560 nm), respectively. Different device structures based on both prepared samples have been investigated as photodiode and gas sensors.     

Energy transport in silica to oxygen-deficient luminescence centers. Comparison with other luminescence centers in silica and α-quartz

The transport of energy absorbed by silica glass to oxygen-deficient luminescence centers in was studied in the range of intrinsic absorption from 8.2 up to 35 eV. The low efficiency of exciting those luminescence centers by transport of energy could not be ascribed merely to carrier scattering by the disordered structure. Other centers (Cu⁺, for example) could be excited in such process with sufficiently high efficiency, albeit lower than that in crystals. The low efficiency of interaction of oxygen deficient centers with quasi-particles is attributed to isolation of these centers in clusters and the non-radiative annihilation of the quasi-particles on the boundaries of these clusters with the main network.     

Photophysical and photoluminescence properties of co-activated ZnS:Cu,Mn phosphors

ZnS:Cu,Mn phosphors were prepared by conventional solid state reaction with the aid of NaCl-MgCl₂ flux at 900 °C. The samples were characterized by X-ray powder diffraction, UV-vis absorbance spectra and photoluminescence spectra. All samples possess cubic structure. Cu has a much stronger effect on the absorption property of ZnS than Mn. Incorporation of Mn into ZnS host only slightly enhances the light absorption, while addition of Cu remarkably increases the ability of absorption due to ground state Cu⁺ absorption. The emission spectra of the ZnS:Cu,Mn phosphors consist of three bands centered at about 452, 520 and 580 nm, respectively. Introduction of Mn significantly quenches the green luminescence of ZnS:Cu. The excitation energy absorbed by Cu is efficiently transferred to Mn activators non-radiatively and the Mn luminescence can be sensitized by Cu behaving as a sensitizer (energy donor).     

Is Auger-free luminescence present in CeF3?

It is well known that Auger-free luminescence (AFL) is observable when the condition E_g>E_VC is satisfied, where E_g is the band-gap energy between the lowest unoccupied band and the highest occupied band and E_VC the energy difference between the top of the highest occupied band and the top of the next lower occupied band. From measurements of reflection and X-ray photoelectron spectra, CeF₃ is demonstrated to really satisfy this condition. No evidence for AFL is found, nevertheless. The absence of AFL in CeF₃ is related to a characteristic nature of its highest and next lower occupied bands, which are quite different from those of previously studied AFL-materials.     

The role of hydrogen- and hydroxyl-doping in CsBr:Eu

Hydrogen- and hydroxyl-doped CsBr:Eu²⁺ storage phosphors were investigated by photostimulated luminescence (PSL) spectra, absorption spectra and PSL lifetime spectra. Hydrogen- and hydroxyl-doping plays an active role related to the trap centers in CsBr:Eu²⁺ storage phosphors. A sharp increase in the PSL yield was observed for non-hydroxyl-doped CsBr:Eu²⁺ annealed in 5%H₂+95%Ar atmosphere. For hydroxyl-doped CsBr:Eu²⁺, the PSL lifetime (361 ns) is obviously shorter than that of typical CsBr:Eu²⁺ storage phosphors.     

Luminescence of Cr ions associated with surpassing the green-emissive defect centers in β-Ga2O3

Photoluminescence of undoped and Cr³⁺-doped β-Ga₂O₃ was investigated. The transparent, undoped β-Ga₂O₃ film was successfully prepared by thermal conversion from GaOOH. The film exhibited predominant green luminescence in response to ultraviolet light excitation at 250 nm. This luminescence behavior, which was proposed to result from the oxygen defect centers, was used in examining excitation and emission mechanisms for Cr³⁺ ions doped in β-Ga₂O₃. It was found that red luminescence of Cr³⁺ surpasses green luminescence of the host lattice, as evidenced by the dependence of the spectral structure on the Cr³⁺ concentration. The excitation of Cr³⁺ was then suggested to be caused by the energy transfer from Ga³⁺O₆ octahedra present in the monoclinic β-Ga₂O₃ lattice.     

Isotropic photonic bandgap in Penrose textured metallic mircocavity

Photonic microcavity has modified photonic modes that have intense localized electric field, which can couple strongly with the embedded emission centers. In this work, we fabricated 2D photonic microcavities with Penrose quasicrystal pattern with 10-fold symmetry. Organic luminescence material tris(8-hydroxyquinoline) aluminum (Alq₃) was embedded into the microcavity and the angle resolved transmission (ART) and photoluminescence (ARPL) spectra of the microcavity were measured. The results showed that the normal Gaussian photoluminescence spectrum of Alq₃ has been strongly modified by the microcavity dispersion characteristic. In addition, omni-directional photonic band gap exists in the microcavity. The higher symmetry of Penrose quasicrystal pattern means that there was minimal difference in the directional dispersion characteristics.     

Upconversion Luminescence of Er3+ Ions in Transparent Germanate Glass Ceramics Containing CaF2 Nanocrystals

The visible upconversion and near-infrared luminescence of Er3＋ ions in germanate glass ceramics containing GaF2 nanocrystals are investigated. The nanocrystals are characterized by x-ray diffraction （XRD） and transmission electron microscopy, showing their mean sizes less than 20hm. High transmittance of the glass ceramics is displayed by absorption spectra. The upconversion luminescence intensity in the glass ceramics increases significantly with increasing temperature. Both the shifts of the XRD peaks and the Stark-split shown in the luminescence spectra indicate the entrance of the Er3＋ ions into the CaF2 nanocrystals, which is confirmed by a Judd-Ofelt analysis. Possible mechanisms of the upconversion luminescence are analyzed.     

Photoluminescence of the ZnSe single crystals doped by thermal diffusion of nitrogen

Photoluminescence (PL) spectra of ZnSe single crystals annealed in different ambients containing molecular nitrogen are investigated. The compensating activity of N impurity in n-ZnSe crystals is shown. It is caused by the formation of N_Se acceptor centers, having 101-108 meV activation energy. The intensity of amplification of both long-wave luminescence spectra bands and the edge luminescence spectra bands caused by the presence of nitrogen in annealing medium is investigated. The presented results allow one to assign the long-wave luminescence to deep acceptors caused by uncontrollable impurities, and the relevant bands of the edge luminescence spectra to the excitons bound with the same deep acceptors. The model explaining the transformations of the luminescent properties of ZnSe crystals by means of nitrogen impurity doping is proposed. The model considers the presence of donors having 75 meV activation energy, acceptors having 220-720 meV activation energy and centers having levels localized near the middle of the band gap.     

Spectroscopy of silver complexes in solutions of inorganic compounds

The absorption, photoluminescence, and photoexcitation spectra of a number of inorganic solid solutions with a silver ion impurity have been examined. The influence of the temperature on the spectral characteristics of haloid and oxygen-containing solutions activated with Ag⁺ ions has been investigated. The temperature dependences of the luminescence quantum yield of solid solutions with Ag⁺ impurity in the temperature range 77-150 K have been studied. It is shown that the spectra under observation are conditioned by electron transition between energetic levels of Ag⁺ ion which are deformed because of the interaction with environment.     

Fluorescence and solvatochromism of a merocyanine dye with a high quadratic polarizability in solutions and polymer films

The influence of medium polarity on the spectroscopic and photophysical properties of 2-[(2E,4E)-6-(1,3,3-trimethyl-2,3-dihydro-1H-2-indolyliden)-2,4-hexadienyliden]malononitrile (THDM) in solutions and polymer matrices is studied at room temperature and 77 K under conditions of steady-state and pulsed laser excitation. A large bathochromic shift of the absorption spectra observed upon an increase in the solvent polarity is caused by a strong increase of the dipole moment in the ground state () on going to an excited Franck-Condon state (). Based on the solvatochromic data, the quadratic polarizability was calculated to be , which is close to the experimentally determined value . A strong narrowing of the fluorescence spectra in comparison with the absorption spectra at room temperature is observed upon an increase in the solvent polarity caused by a decrease in the bond length alternation parameter and by weakening of vibronic interactions in the singlet excited state. The mirror symmetry of the absorption and fluorescence spectra of THDM in ethanol at 77 K is explained by the increase of the electrostatic interactions between the solvent and merocyanine molecules. The dynamic fluorosolvatochromism of THDM in the picosecond range is caused by molecules reorientations of the polar environment occurring during a time period consistent with the dielectric relaxation time of these molecules.     

Photoluminescence properties of vacuum-deposited organic molecule-oxide (MePTCDI-SiO2) mixed layers

Thin films of the perylene derivative N,N′-dimethylperylene-3,4,9,10-bis-dicarboximide (MePTCDI) incorporated in SiO₂ matrix at various concentrations are obtained by condensation of host and dye in high vacuum. Photoluminescence spectroscopy is applied to study the spectral properties of the layers. Significant alterations in luminescence spectra in dependence on dye quantity are explained as a consequence of dye aggregation and resonant energy transfer. We demonstrate that the deposition geometry and preparation conditions offer an effective way to reduce the possibilities for non-radiative transitions, thus increasing the photoluminescence quantum efficiency.     

Optical properties of Tm-doped GaSe single crystals

Optical properties of Tm-doped GaSe single crystals were investigated by measurements of optical absorption and photoluminescence. The single crystals were grown by the Bridgman technique. The X-ray diffraction analysis revealed that the single crystals were in the ε-type GaSe phase. The optical absorption spectra showed a sharp absorption peak at 582 nm near the band edge, which is due to direct free exciton. The temperature dependence of the energy of the exciton absorption peak was well fitted by the Varshni relation. In the photoluminescence spectrum at 10 K, we observed a very weak emission peak at 586 nm, a relatively strong emission peak centered at 613 nm, and several sharp and narrow emission peaks in the 790-840 nm region. The two emission peaks at 586 and 613 nm were associated with intrinsic emission lines due to direct free exciton and indirect bound exciton. The emission peaks in the 790-840 nm region, which were related to extrinsic emission, were assigned as due to the ³F₄→³H₆ transition of Tm³⁺ ions with a low symmetry of D₃ in the host lattice.     

Strong cooperative upconversion luminescence of ytterbium doped oxyfluoride nanophase vitroceramics

The strong 479.1 nm blue cooperative upconversion luminescence of ytterbium Yb³⁺ ion doped oxyfluoride nanophase vitroceramics (Yb:FOV) is studied in this article. It is found that the 479.1 nm blue cooperative upconversion luminescence strength of Yb(5):FOV is 230 times greater than that of fluoride glass Yb(3):ZBLAN. The large enhancement on cooperative upconversion blue luminescence of this article results from the comprehensive improvement on the aspects of better coupled chance of the Yb³⁺-Yb³⁺ cluster, less cross-relaxation, better concentration contribution of Yb³⁺ activator, non-saturation, and better upconversion luminescence efficiency.     

Luminescence of some zirconium-containing compounds under vacuum ultraviolet excitation

Photoluminescence of compounds that contain stoichiometric zirconium has been studied under vacuum ultraviolet excitation. The compounds show emission peaking at 280-320 nm while the excitation spectra show some bands in 130-190 nm region. The ultraviolet emission is explained as Zr to O charge transfer transition. The luminescence result and structural information classify the studied compounds into two groups. The former group involves ZrP₂O₇, CaZr(PO₄)₂, NaZr₂(PO₄)₃, Ca₂ZrSi₄O₁₂, Ca₃ZrSi₂O₉ and SrZrSi₂O₇, which show rather intense luminescence and do not have any infinite Zr-O-Zr-O-3D chain or link in their structure. The latter group is CaZrO₃ and ZrSiO₄, which do contain infinite Zr-O-Zr-O-3D chain and show quite weak luminescence. Luminescence of Ca_1−xMn_xZr(PO₄)₂ has also been studied. By replacing a part of Ca with Mn, ultraviolet emission of the host weakens and visible emission peaking at 540 nm appears. It is claimed that transfer of absorbed energy from Zr to Mn occurs.